共查询到17条相似文献,搜索用时 218 毫秒
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光电双向负阻晶体管(PBNRT)是一种新型S型光电负阻器件.本文对它的光电负阻特性进行了数值模拟和实验研究,给出了器件等效电路.PBNRT在光电混合工作模式下具有光控电流开关效应,可通过光照和控制电压两种控制方式改变器件的S型负阻特性.模拟和实验结果均表明:光照强度增大,维持电压基本保持不变,转折电压减小,负阻电压摆幅减小;而增大控制电压,维持电压和转折电压均增大,输出负阻特性曲线右移.上述特点使得PBNRT可望在光电开关、光控振荡和光电探测等方面有很好的应用前景. 相似文献
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本文在Firsov理论基础上,引入Slater波函数等概念,解释了原子结构对Se(E)的Z振荡的影响。它不仅能解释常规能量范围内(101000keV)的轻元素靶和重元素靶的Z振荡行为,而且能解释更高的能量范围内(10100MeV)Z振荡行为。本文引用了分子轨道法理论来处理分子靶问题,导出了分子结构对Se(E)的Z振荡影响的方程式,使能处理相当宽的能量范围内的分子靶的Se(E)的Z振荡问题。应用本文方法所得结果与Z1C和Li+Z2靶的Z1(或Z2)振荡的实验结果进行了比较,同时还与在较高能量范围的S+Na和F+Ag系统的实验结果作了比较,都得到了满意的结果,说明本文提出的方法是令人满意的。 相似文献
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Measurements of the current/voltage characteristics of semiconductor diodes beyond avalanche breakdown in which heating effects have been eliminated show that d.c. negative resistance is observed in qualitative agreement with theoretical calculations. Measurements of anomalous-mode oscillations on the same diodes show that, although d.c. negative resistance is often present at the current densities needed for anomalous-mode operation, it is not a necessary condition for high-efficiency oscillation. 相似文献
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《Electron Devices, IEEE Transactions on》1970,17(4):275-281
A one-dimensional computer simulation of Gunn diodes with zero-impedance external load has been made for various nonuniform doping profiles including asymmetrical step-like ones, linearly graded ones, and a periodic square-wave one. The distances between the electrodes and the doping level are taken as 10 µ and an order of 1015cm-3, respectively. Current-voltage characteristics, oscillation current waveforms, oscillation frequency versus applied voltage characteristics, and electric field distributions as well as their dynamic changes were computed for the profiles with various parameters. The results show that with asymmetrical doping profiles, Gunn oscillation takes place when the cathode is on the higher resistance side, while for the opposite polarity it is difficult for the oscillation to occur. In the latter case, a static high-field domain is built up in the vicinity of the anode. The results also show that the voltage dependence of oscillation frequency is enhanced by an asymmetrical nonuniformity in the doping profiles. A considerable rise of the threshold voltage of the oscillations is found for the periodic square-wave profile. An experimental result is analyzed on the basis of the computed results. 相似文献
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《Electron Devices, IEEE Transactions on》1969,16(11):935-945
The nonlinear operating characteristics of the avalanche transit-time oscillator are studied by means of Fourier-series representation. For optimum operation, the oscillator must be designed such that start-oscillation conditions are satisfied simultaneously at the first and the second harmonic of the desired oscillation frequency. Under those conditions the oscillation frequency does not depend on the dc bias current; the signal level increases smoothly with bias current. For large signals, the diode exhibits negative resistance for frequencies substantially below the avalanche frequency; the oscillation frequency therefore may be below the avalanche frequency corresponding to the dc bias current required for large-signal operation. A condition for attaining large-signal operation is that the product of drift-zone capacitance and total load resistance must be small compared to the oscillation period; this condition also yields small starting currents. The output power at the oscillation frequency is obtained explicitly in terms of diode and external circuit parameters. The maximum attainable output power is limited by parasitic series resistance and by permissible RF voltage swing as compared to dc bias voltage. The best power-impedance product is obtained by choosing the transit angle equal to 0.74 π. In practice, it may be advantageous to choose a smaller value for the transit angle, in order that the tuning condition for the second harmonic may be more easily satisfied. The dc-to-RF conversion efficiency in principle is linearly proportional to the dc current density; the maximum efficiency again is limited by parasitic series resistance and by permissible RF voltage swing. 相似文献
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《Electron Devices, IEEE Transactions on》2009,56(8):1562-1566
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Experiments with the limited space-charge accumulation(LSA) mode of oscillation in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch(PCSS) are discussed.It has been observed that growth and drift of a photo-activated charge domain(PACD) are quenched only when the bias voltage is more than twice the threshold voltage.The original negative resistance characteristics are directly utilized in the LSA mode;during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity-electric field characteristic.The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time.The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage. 相似文献
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Houng-Chi Wei Yeong-Her Wang Mau-Phon Houng 《Electron Devices, IEEE Transactions on》1994,41(8):1327-1333
Voltage-controlled negative differential resistance (NDR) characteristics in a N-AlGaAs/p+-GaAs/n-GaAs transistor structure are proposed and demonstrated. The gate, made using self-aligned p-type diffusion, is placed in the n-GaAs collector layer instead of the p+-GaAs base layer, resulting in a so-called resistive gate. For a fixed gate voltage, the device current is modulated by the applied anode voltage. Under appropriate gate voltage with respect to the anode, the device shows good voltage-controllable NDR characteristics, including large peak-to-valley current ratios (PTV's) and a voltage extension in the N-shaped curve which is equivalent to the common-emitter breakdown voltage in a transistor. A numerical model based on the transistor model for the carrier transport in this device, taking account of the influence of the applied anode voltage on the gate, is proposed. The experimental results show large room temperature PTV's (e.g., 140 at a gate bias of 1.5 V) and large voltage extension in N-shaped curves (about 9 V). Reasonable agreement between theoretical and experimental results is observed 相似文献