一种新型FC和WLP的柔性凸点技术

FC(倒装片)和WLP(圆片级封装)均要在圆片上制作各类凸点,它们与基板焊接互连后,由于各材料间的热失配可能造成凸点——基板间互连失效,从而影响了器件的可靠性和使用寿命。解决这一问题的通常做法是对芯片凸点与基板间进行下填充。本文介绍的柔性凸点技术是在焊球下面增加一层具有弹性的柔性材料,当器件工作产生热失配时,由于柔性材料的自由伸缩,将大大减小以至消除各材料间的失配应力,使芯片凸点与基板下即使不加下填充,也能达到器件稳定、长期、可靠地工作的目的。     

圆片级封装的无铅焊料凸点制作技术研究

对圆片级封装（WLP）的结构设计和关键工艺技术进行了研究；描述了凸点UBM层的选择，凸点回流技术以及凸点的质量控制技术；重点阐述了采用电镀来制作无铅焊料凸点的方法。     

IMT公司用于MEMS的WLP和TSV集成技术

创新微技术公司（IMT）是一家产品多样化和客源广泛的MEMS合同制造商和代工厂。IMT成立于2000年,专业生产MEMS（微电子机械系统）器件。IMT拥有13万平方英尺的配套设施,包括3万平方英尺的100级洁净室／厂房,目前该净化厂房是世界范围内最大且设施最好的独立式MEMS厂房。该公司主要从事批量生产,可提供从设计到生产的完整代工服务。     

温度应力对MEMS器件分层失效的影响规律

通过分析MEMS器件多层结构界面裂纹疲劳扩展的影响因素及温度应力对界面疲劳的影响机理,建立了温度应力对分层失效影响的理论模型,并建立了双材料结构层的有限元分析模型,研究了温度应力对界面裂纹疲劳扩展的影响规律。研究结果表明:在温度应力作用下,裂纹易沿界面方向扩展;温度幅值升高,裂纹疲劳扩展速率呈指数关系增大;裂纹从形成初期到扩展至分层失效的过程中历经较慢扩展、相对平稳扩展和快速扩展三个阶段。     

BGA器件Z×2101回流过程有限元模拟

采用间接耦合的方法对BGA（Ball Grid Array）器件ZX2101的回流过程进行有限元模拟,得出回流结束后BGA器件整体、PCB以及芯片基板的温度分布,同时仿真分析了焊球阵列部分的温度分布随时间变化的情况,据此得到回流结束后PCB与芯片基板的变形。在设定的温度边界条件下,得到了四点回流曲线,模拟结果与实测结果相吻合。     

GaN基倒装焊LED芯片的热学特性模拟与分析

采用有限元方法建立了GaN基倒装LED芯片的三维热学模型,并对其温度分布进行模拟,比较了在不同凸点(焊点)分布、不同粘结层材料与厚度、不同蓝宝石衬底厚度及蓝宝石图形化下的倒装芯片温度分布,研究了粘结层空洞对倒装芯片热学特性的影响,并根据芯片传热模型对模拟结果进行了分析。     

焊料键合实现MEMS真空封装的模拟

结合典型的焊料键合MEMS真空封装工艺,应用真空物理的相关理论,建立了封装腔体的真空度与气体吸附和解吸、气体的渗透、材料的蒸气压、气体通过小孔的流动等的数学模型,确定了其数值模拟的算法.通过实验初步验证了模拟结果的准确性,分析了毛细孔尺寸对腔体和烘箱真空度的影响,实现了MEMS器件真空封装工艺的参数化建模与模拟和仿真优化设计.     

焊料键合实现MEMS真空封装的模拟

结合典型的焊料键合MEMS真空封装工艺,应用真空物理的相关理论,建立了封装腔体的真空度与气体吸附和解吸、气体的渗透、材料的蒸气压、气体通过小孔的流动等的数学模型,确定了其数值模拟的算法．通过实验初步验证了模拟结果的准确性,分析了毛细孔尺寸对腔体和烘箱真空度的影响,实现了MEMS器件真空封装工艺的参数化建模与模拟和仿真优化设计．     

基于IC封装的Au凸点剪切断丝模拟及实验

为提高IC封装过程中钉头Au凸点制备效率,需对Au凸点的形成机理进行分析,得出影响Au凸点质量的各种工艺参数。采用有限元仿真与实验相结合的方法,针对不同的劈刀剪切速度模拟剪切断丝过程,并在实际的引线键合机上进行实验。结果显示劈刀剪切速度越大,劈刀剪切Au丝时所受的作用力越小,但减小幅度不大。分析表明,当劈刀以较低速度进行剪切断丝时,需要克服较大的位错滑移能,而随着速度提高,滑移系增多,Au丝获得的热量增多,使得材料的塑性降低,从而能够减小剪切断丝时的剪切力,但由于Au丝的直径较小,剪切速度相对剪切距离又较大,所以剪切力的减小幅度对剪切过程影响有限,而且不同的剪切速度均能得到共面性较好的钉头Au凸点。     

温度应力对MEMS器件分层失效的影响规律

通过分析MEMS器件多层结构界面裂纹疲劳扩展的影响因素及温度应力对界面疲劳的影响机理,建立了温度应力对分层失效影响的理论模型,并建立了双材料结构层的有限元分析模型,研究了温度应力对界面裂纹疲劳扩展的影响规律。研究结果表明:在温度应力作用下,裂纹易沿界面方向扩展;温度幅值升高,裂纹疲劳扩展速率呈指数关系增大;裂纹从形成初期到扩展至分层失效的过程中历经较慢扩展、相对平稳扩展和快速扩展三个阶段。     

晶圆键合技术与微电子机械系统新进展

概述了晶圆键合技术穴WB雪和微电子机械系统穴MEMS雪的新进展。介绍了晶圆键合工艺、技术要求、应用选择以及对MEMS的作用;展示了MEMS制造技术和应用前景。     

FeNi合金UBM圆片级封装焊点剪切力研究

FeNi合金与无铅焊料反应速率低,生成的金属间化合物(IMC)较薄,有望作为圆片级封装(WLP)凸点下金属(UBM)层材料.对两种FeNi UBM以及一种Cu UBM圆片级封装样品进行回流、湿热以及预处理实验,并通过推球的方法,对其焊点进行剪切测试.通过断面与截面分析,研究其在不同处理条件下的金属间化合物生长情况,分析其断裂模式.结果表明,FeNi UBM焊点剪切力高于Cu UBM.Fe47Ni UBM与焊料反应生成的金属间化合物较薄,对于剪切力影响较小,而Fe64Ni UBM与焊料反应生成离散的CuNiSn金属间化合物,对于其焊点强度有提高作用,Cu UBM与焊料反应生成较厚的金属间化合物,会明显降低焊点的剪切力.断面分析表明,Cu UBM会随焊球发生断裂,其强度明显小于FeNi UBM.     

MEMS器件VHDL-AMS宏模型

随着MEMS集成度的提高,迫切需要有相应的CAD工具进行系统级的设计与模拟,由于MEMS器件的工作原理包含了多种能量的耦合,宏模型的建立成了系统级设计的“瓶颈”。模拟硬件描述语言(如VHDL-AMS)提供了一种有效的方法,即建立起表示MEMS器件动态特性的常微分方程和代数方程(DAE),然后对其描述,形成相应的库单元,利用现有电路分析软件进行系统级模拟。本文介绍了MEMS器件VHDL描述的过程,并给出了横向谐振器描述的例子。     

Modeling and characterization of three kinds of MEMS resonators fabricated with a thick polysilicon technology

Three different kinds of two-port flexural resonators, with both clamped and free ends, and with nominal resonance frequencies between 5 MHz and 50 MHz, were designed and fabricated. Among them, a novel free-free third-mode resonator, as well as a tunable free-free resonator, designed to maintain a high quality factor despite its tunability, are presented. Because of reduced energy loss in the clamps, higher quality factors are expected from free-free devices. To estimate the resonators performance, the effect of temperature and axial stresses on the resonators is investigated: for the clamped-clamped resonator, a theoretical model is also presented. FEM simulations are performed for the three geometries and the results are discussed. Dario Paci studied electronic engineering at University of Pisa and at “Scuola Superiore Sant’Anna”. He received his Master Degree in 2003, with a dissertation on MEMS resonators for RF applications. In 2003 he worked at PEL-ETHZ for three months, modelling chemical sensors. In 2005 he was visiting scholar at the Katholieke Universiteit Leuven (Belgium), working at IMEC on MEMS resonators anchor losses modeling. His research interests include MEMS modelling and design and development of circuits for MEMS conditioning. Now he is pursuing the Ph.D. in Information Engineering at University of Pisa, and he is working as a research assistant for the IEIIT of the Italian National Council for the Research (CNR). Massimo Mastrangeli got the MS degree in Electronic Engineering at the University of Pisa (Italy) on July, 2005; his thesis concerned project and measurements of MEMS flexural resonators. During summer 2005 he was visiting scholar at the Katholieke Universiteit Leuven (Belgium), working at IMEC on the mechanical characterization of PolySiGe layers for MEMS applications. He is currently a PhD student at KULeuven, developing a techniques for self-assembly of IC/MEMS for highly integrated microsystems. Andrea Nannini received his laurea degree in Electronic Engineering from the University of Pisa, Italy, in 1982; He received his Ph.D degree in 1987 at the end of the first Italian Ph.D course held by the University of Padova, Italy. From 1988 to 1992 he was a Researcher at the "Scuola Superiore di Studi Universitari e Perfezionamento S. Anna" – Pisa- Italy. Since 1992 he joined the Department of Information Engineering of the University of Pisa as an Associate Professor. Since November 2000 he is a full professor of “Sensor and Microsystem Design”. He is currently chairman of the postgraduate school of Electronic Engineering and vice-chairman of the PhD school of Information Engineering of the University of Pisa. His main research interests concern solid state sensors, microelectronic devices and technologies, MEMS. Francesco Pieri received the laurea and the Ph.D. degree in Electrical Engineering, both from the University of Pisa, Italy, in 1996 and 2000 respectively. He joined the Department of Information Engineering of the same University as an assistant professor in 2001. His current research interests include applications of porous silicon to sensors and microtechnologies, and development of microelectromechanical systems.     

MEMS压阻加速度传感器阻尼特性研究

研究了空气阻尼对MEMS压阻加速度传感器性能的影响,建立了传感器动力学模型和空气阻尼模型,分析了空气间隙大小与传感器阻尼系数的相互关系,通过控制空气间隙可以达到控制加速度传感器阻尼的目的。根据分析结果设计了三明治结构封装的传感器,应用有限元仿真软件,对传感器的应力和应变进行了仿真计算,完成传感器结构参数设计;采用MEMS体硅加工工艺和圆片级封装工艺,制作了MEMS压阻加速度传感器。测试结果表明,采用三明治结构封装形式,可以控制压阻加速度传感器的阻尼特性,为提高传感器性能提供了途径。     

以工艺为主线的MEMS设计工具IMEE

IMEE是一个自主研发的MEMMS CAD系统，它包括结点化的系统设计功能、快速的力电耦合性能分析功能、参数化版图单元的版图设计功能、工艺编辑设计和三维模拟功能等。该系统的最大特点是以工艺为主线、贯穿整个设计过程，重点解决MEMS设计与工艺脱节的问题、实现MEMS工艺设计和在线模拟。另外、该系统是跨平台的，适用于UNIX和Windows操作系统，兼容其他MEMS CAD软件，还支持用户自主扩展其他功能模块。     

MEMS技术检测痕量爆炸物微粒的原理与实验方法研究

提出一种基于MEMS技术、利用爆炸物微粒本身特性来检测爆炸物的新型微梁式爆炸物探测器,这种探测器利用不同爆炸物具有不同的熔点及蒸发点,并且在熔解过程中吸收热量的原理,使落在悬臂梁上的痕量爆炸物微粒在蒸发时的热量变化可以通过梁的弯曲变形反映出来,其中复合双金属悬臂梁是利用MEMS工艺制造的;还介绍了探测器的结构设计、悬臂梁弯曲变形的理论计算及技术实现方案探讨等前沿探索性研究工作。     

MEMS器件在冲击下的可靠性

MEMS器件在制造、运输和使用过程中不可避免地受到不同程度的冲击作用,分析和认识MEMS器件在冲击下的响应和失效模式,对提高器件的耐冲击和可靠性具有一定的指导意义。本文综述了MEMS器件的冲击测试和理论分析方法,对MEMS器件的可靠性设计具有一定参考价值。     

电容式加速度传感器结构的计算机仿真

针对硅梁论述了微机械电容式加速度传感器的工作原理,应用有限元分析方法对三种不同的硅梁结构对加速度计进行结构建模,并模拟分析了三种不同的梁的加速度计结构的第一和第二模态,1g加速度下的挠度,以及存在预应力情况下结构的第一、第二模态响应频率,得到了最优的双梁结构,并在试验中得到验证,最终研制出了高水平的电容式加速度传感器。     

A novel fabrication process of MEMS devices on polyimide flexible substrates

Micro-electro-mechanic-system (MEMS) devices on flexible substrate are important for non-planar and non-rigid surface applications. In this paper, a novel and cost-effective fabrication process for an 8 × 8 MEMS temperature sensor array with a lateral dimension of 2.5 mm × 5.5 mm on a polyimide flexible substrate is developed. A 40 μm thick polyimide substrate is formed on a rigid silicon wafer using as a mechanical carrier throughout the fabrication by four successive spin coating liquid polyimide. The arrayed temperature sensing elements made of 1200 Å sputtered platinum thin film on polyimide substrate show excellent linearity with a temperature coefficient of resistance of 0.0028/°C. The purposed sensor obtains a high sensitivity of 0.781 Ω/°C at 8 mA at constant drive current. Because of the low heat capacity and excellent thermal isolation, the temperature sensing element shows excellent high sensitivity and a fast thermal response. The finished devices are flexible enough to be folded and twisted achieving any desired shape and form. Employing spin-coated liquid polyimide substrate instead of solid polyimide sheet minimizes the thermal cycling as well as improves the production yield. This fabrication technique first introduces the spin-coated PDMS (Polydimethylsiloxane) interlayer between the silicon carrier and the polyimide substrate and makes the polyimide-based devices separate much easier and greatly simplifies the fabrication process with a high production yield. A non-successive two-stage cure procedure for the polyimide precursor is developed to meet low-temperature requirement of the PDMS interlayer. The fabrication procedure developed in this research is compatible with conventional MEMS technology through an optimized integration process. The novel flexible MEMS technology can benefit the development of other new flexible polyimide-based devices.