Measurement technique for the incident electron current in secondary electron detectors and its application in scanning electron microscopes.

A measurement technique for incident electron current in secondary electron (SE) detectors, especially the Everhart-Thornley (ET) detector, based on signal-to-noise ratio (SNR), which uses the histogram of a digital scanning electron microscope (SEM) image, is described. In this technique, primary electrons are directly incident on the ET detector. This technique for measuring the correlation between incident electron current and SNR is applicable to the other SE detectors. This correlation was applied to estimate the efficiency of the ET detector itself, to evaluate SEM image quality, and to measure the geometric SE collection efficiency and the SE yield. It was found that the geometric SE collection efficiency at each of the upper and lower detectors of a Hitachi S-4500 SEM was greater than 0.78 at all working distances.     

Scintillation SE detector for variable pressure scanning electron microscopes

We present results obtained with a new scintillation detector of secondary electrons for the variable pressure scanning electron microscope. A detector design is based on the positioning of a single crystal scintillator within a scintillator chamber separated from the specimen chamber by two apertures. This solution enables us to decrease the pressure to several Pa in the scintillator chamber while the pressure in the specimen chamber reaches values of about 1000 Pa (7.5 Torr). Due to decreased pressure, we can apply a potential of the order of several kV to the scintillator, which is necessary for the detection of secondary electrons. Simultaneously, the two apertures at appropriate potentials of the order of several hundreds of volts create an electrostatic lens that allows electrons to pass from the specimen chamber to the scintillator chamber. Results indicate a promising utilization of this detector for a wide range of specimen observations.     

Design and Application of a Quadrupole Detector for Low-Voltage Scanning Electron Microscopy

Scanning electron microscopes operated at low voltages are applied in the inspection and metrology of microstructures as well as in the testing of integrated circuits. The efficiency of a conventional Everhart-Thornley-detector is poor in this application, especially if large samples, e.g. wafers, are inspected or tested at small working distances. In addition, the primary beam is deflected and aberrations are added by the extraction field of this detector. A new type of detector for secondary electron recording in low-voltage scanning electron microscopy was, therefore, designed, built and tested. It utilizes crossed electric and magnetic quadrupoles to compensate for each other in their effect on the primary beam. On the other hand, both fields support the extraction and collection of the secondary electrons. During the test application, the detector showed high efficiency resulting in low-noise images without any negative effect on the resolution.     

The trajectories of secondary electrons in the scanning electron microscope

Three-dimensional simulations of the trajectories of secondary electrons (SE) in the scanning electron microscope have been performed for plenty of real configurations of the specimen chamber, including all its basic components. The primary purpose was to evaluate the collection efficiency of the Everhart-Thornley detector of SE and to reveal fundamental rules for tailoring the set-ups in which efficient signal acquisition can be expected. Intuitive realizations about the easiness of attracting the SEs towards the biased front grid of the detector have shown themselves likely as false, and all grounded objects in the chamber have been proven to influence the spatial distribution of the signal-extracting field. The role of the magnetic field penetrating from inside the objective lens is shown to play an ambiguous role regarding possible support for the signal collection.     

Sharing of secondary electrons by in-lens and out-lens detector in low-voltage scanning electron microscope equipped with immersion lens

To understand secondary electron (SE) image formation with in-lens and out-lens detector in low-voltage scanning electron microscopy (LV-SEM), we have evaluated SE signals of an in-lens and an out-lens detector in LV-SEM. From the energy distribution spectra of SEs with various boosting voltages of the immersion lens system, we revealed that the electrostatic field of the immersion lens mainly collects electrons with energy lower than 40 eV, acting as a low-pass filter. This effect is also observed as a contrast change in LV-SEM images taken by in-lens and out-lens detectors.     

Specimen charging and detection of signal from non-conductors in a cathode lens-equipped scanning electron microscope

This paper concerns the problems connected with the observation of a nonconductive specimen in a scanning electron microscope (SEM) when incident electrons create a surface charge and a corresponding electric field. The special configuration of the cathode lens enables one to control the landing energy of primary electrons via the specimen bias. In the cathode lens, the accelerating electric field at the surface of the specimen combines itself with that of the surface charge in influencing the trajectories of the signal electrons and hence the detected signal level and the possible recapturing of slow secondaries. Recaptured electrons reduce the ultimate positive surface potential, which arises when working below the higher critical energy of electron impact. Computer simulations of electron trajectories were performed for the typical cathode lens configuration and for a model specimen characterized by emission yields similar to those for glass. The simulations brought an extensive set of data about the trajectories of both secondary and backscattered electrons. Furthermore, the data were processed in order to assess the charge balance between the emitted and recaptured electrons as well as the collection efficiency of the detector. The results include values of the ultimate positive surface potential and the detected signal level, both in dependence on the initial energy of the electron impact and the size of the field of view. Finally, the method for the determination of critical energy is reevaluated. This is based on the measurement of the time dependence of the detected signal.     

Microchannel plate detector for low voltage scanning electron microscopes

A microchannel plate detector has advantages over conventional Everhart-Thornley detectors for low voltage SEM applications. A microchannel plate can provide symmetric SEM signal detection at the low beam energies needed for non-destructive examination of integrated circuits. Microchannel plate detectors are effective for both secondary electron and backscattered electron imaging. Their relatively small size and ability to be mounted directly below the final pole piece give them improved performance relative to conventional detectors in applications requiring short working distances. A significant amount of laboratory and applications experience has shown that microchannel plates are reliable and sufficiently resistant to contamination for use in high volume, production environments which require low voltage SEM imaging.     

Application of channel electron multipliers in an electron detector for low‐voltage scanning electron microscopy

An electron detector containing channel electron multipliers was built and tested in the range of low‐voltage scanning electron microscopy as a detector of topographic contrast. The detector can detect backscattered electrons or the sum of backscattered electrons and secondary electrons, with different amount of secondary electrons. As a backscattered electron detector it collects backscattered electrons emitted in a specific range of take‐off angles and in a large range of azimuth angles enabling to obtain large solid collection angle and high collection efficiency. Two arrangements with different channel electron multipliers were studied theoretically with the use of the Monte Carlo method and one of them was built and tested experimentally. To shorten breaks in operation, a vacuum box preventing channel electron multipliers from an exposure to air during specimen exchanges was built and placed in the microscope chamber. The box is opened during microscope observations and is moved to the side of the scanning electron microscope chamber and closed during air admission and evacuation cycles enabling storing channel electron multipliers under vacuum for the whole time. Experimental tests of the detector included assessment of the type of detected electrons (secondary or backscattered), checking the tilt contrast, imaging the spatial collection efficiency, measuring the noise coefficient and recording images of different specimens.     

A spectroscopic scanning electron microscope design

This paper describes a proposal to improve the design of scanning electron microscopes (SEMs). The design is based upon using an SEM column similar to the conventional one, magnetic sector plates and a mixed field immersion objective lens. The optical axis of the SEM column lies in the horizontal direction and the primary beam is turned through 90 degrees before it reaches the specimen. This arrangement allows for the efficient collection, detection and spectral analysis of the scattered electrons on a hemispherical surface that is located well away from the rest of the SEM column. The proposed SEM design can also be easily extended to incorporate time multiplexed columns and multi-column arrays.     

Light collection efficiency and light transport in backscattered electron scintillator detectors in scanning electron microscopy

Experimentally, scintillator detectors used in scanning electron microscopy (SEM) to record backscattered electrons (BSE) show a noticeable difference in detection efficiency in different parts of their active zones due to light losses transport in the optical part of the detector. A model is proposed that calculates the local efficiency of the active parts of scintillator detectors of arbitrary shapes. The results of these calculations for various designs are presented.     

Application of the low-loss scanning electron microscope image to integrated circuit technology. Part 1--Applications to accurate dimension measurements

Scanning electron microscopes (SEMs) are the most extensively used tools for dimensional metrology and defect inspection for integrated circuit technologies with 180 nm and smaller features. Currently, almost all SEMs are designed to collect as many secondary and backscattered electrons as possible. These signals are mainly secondary electrons (SE1, SE2, and SE3) detected with various detection schemes. To facilitate the electron collection, very strong electric and magnetic fields are applied not just in the path of the primary electron beam but to the emerging electrons as well. These new systems provide strong signals, thus better signal-to-noise ratio, and thus resulting in higher throughput than older ones. On the other hand, the use of secondary electrons means that measurement results are much more prone to the detrimental effects of electron beam interactions, sample charging, and sample contamination than measurements with higher-energy backscattered electrons. The use of backscattered electrons, especially low-loss electrons (LLE), can provide better surface sensitivity, edge accuracy, and repeatability, possibly at the expense of measurement speed. This two-part study investigates the benefits and drawbacks of low-loss electron imaging to edge characterization for dimensional metrology and enhancement of fine surface features done through filtration or separation of the generated LLE signal and the use of energy-dependent signals. Part 1 reviews and illustrates the potential for accurate dimensional measurements at low accelerating voltage by LLE, and Part 2 will concentrate on the enhancement of surface features in chemical-mechanically planarized specimens with the use of a novel LLE detector.     

A novel in-lens detector for electrostatic scanning LEEM mini-column

A novel principle of an in-lens detector of very slow electrons is described and the detector efficiency discussed. The detector was built into a coaxial column for a Cylindrical Mirror Analyser for Auger electron microanalysis. In order to obtain a very low energy scanned imaging, a cathode lens was formed between the final electrode of the column and a negatively biased specimen. The signal electrons accelerated within the cathode lens field enter the column and after being mirrored back impact a micro-channel-plate based detector fitted around the optical axis. The acceptance of the detector, expressed as a ratio of the number of electrons impacting the detector to the full emission of a cosine source, was calculated to be 0.86 for 1 eV and 0.985 for 10 eV electrons. Then, the efficiency of conversion into output pulses is 0.35 and 0.31, respectively; these parameters are superior to those of conventional SEM detectors for secondary electrons. Micrographs taken at low energies ranging down to units of eV are presented.     

New scintillation detector of backscattered electrons for the low voltage SEM

The new scintillation detector of backscattered electrons that is capable of working at primary beam energy as low as 0.5 keV is introduced. Low energy backscattered electrons are accelerated in order to generate a sufficient number of photons. Secondary electrons are deflected back by the energy filter so that the true compositional contrast of the specimen is obtained. The theoretical models of the detector function are described and first demonstration images are presented.     

Efficient Detection of Secondary Electrons in Low-Voltage Scanning Electron Microscopy

A new detection method is proposed allowing an efficient extraction of the secondary electrons without affecting the scanning spot of the primary beam. The suggested detector arrangements can be regarded as generalized Wien filters whose electric and magnetic fields do not affect the primary electrons with average beam energy, yet strongly influence the paths of the secondary electrons. The new detectors are especially useful in low-voltage scanning electron microscopy.     

An annular toroidal backscattered electron energy analyser for use in scanning electron microscopy

A backscattered electron energy spectrometer, based on a toroidal energy analyser and an annular detector, has been devised and adapted for use in a scanning electron microscope. Computer simulations have been carried out for equipotentials and trajectories of electrons in the toroidal deflector, which permit the optimisation of the energy analyser characteristics for special applications. Based upon these results, a device has been built and its efficiency is demonstrated by selected images of a multilayered structure and a series of recorded backscattered electron spectra.     

Very low energy microscopy in commercial SEMs

Minimum necessary adaptations are described that are sufficient for obtaining very low energy electron micrographs (VLEEMs) from commercially available routine scanning electron micrographs (SEMs) with the electrons accelerated to an energy of the order of tens of keV. A cathode lens inserted into the specimen chamber enables one to decelerate electrons in front of the specimen surface to a desired low landing energy, which can be freely varied even down to zero. When a potential slightly more negative than the accelerating voltage is applied, a scanning mirror electron microscopy mode can be effected. The achievable point resolution at very low energies proves to be not too dependent on the objective lens parameters, so that the physical limit of aberrations of the homogeneous field of the cathode lens is nearly attainable. The detection efficiency for the standard Everhart-Thornley secondary electron detector is discussed, and results for the routine Tesla BS 340 SEM are presented.     

An anomalous contrast in scanning electron microscopy of insulators: the pseudo-mirror effect

In a scanning electron microscope, electron-beam irradiation of insulators may induce a strong electric field due to the trapping of charges within the specimen interaction volume. On one hand, this field modifies the trajectories of the beam of electrons subsequently entering the specimen, resulting in reduced penetration depth into the bulk specimen. On the other hand, it leads to the acceleration in the vacuum of the emitted secondary electrons (SE) and also to a strong distortion of their angular distribution. Among others, the consequences concern an anomalous contrast in the SE image. This contrast is due to the so-called pseudo-mirror effect. The aim of this work is first to report the observation of this anomalous contrast, then to give an explanation of this effect, and finally to discuss the factors affecting it. Practical consequences such as contrast interpretations will be highlighted.     

Design and characterisation of a single-reflection,solid-state detector with high discrimination against backscattered electrons for cathodoluminescence microscopy

Aportable solid-state detector (SSD) for cathodoluminescence (CL) has been constructed and tested. The detector geometry utilises a parabolic reflector to direct light towards the solid-state detection element. The photo-sensitive area of the solid-state photodiodes is situated at a level in line with or sightly below the top surface of the specimen to minimise the collection of backscattered electrons (BSEs) coming directly from the beam impact point. The components have been integrated into a single unit to enhance portability. In comparison with a commercial CL detection system, the new geometry shows excellent efficiency in rejecting BSE contribution during CL operation. A light collection solid angle close to 1.97π steradian is realised in this geometry, higher than other SSD-CL systems. A method for characterising CL detection system performance has been developed.     

Detectors for low voltage scanning electron microscopy

Two simple electron detectors (low and high take-off angles) for low-voltage scanning electron microscopy were built and tested. They contain large area scintillators with an applied high voltage and are able to detect backscattered electrons with high efficiency. These detectors also can record the sum of backscattered and secondary electrons. The primary beam of the microscope is screened from the scintillator high voltage by grids, which also permit switching from the BSE to the (SE + BSE) mode. The circular symmetry of the grids minimizes the influence of applied potentials on the primary beam. The use of the low and high take-off detectors permits the detection of back-scattered electrons emitted from the specimen surface into different ranges of take-off angles.     

Experimental observation of the improvement in MTF from backthinning a CMOS direct electron detector

The advantages of backthinning monolithic active pixel sensors (MAPS) based on complementary metal oxide semiconductor (CMOS) direct electron detectors for electron microscopy have been discussed previously; they include better spatial resolution (modulation transfer function or MTF) and efficiency at all spatial frequencies (detective quantum efficiency or DQE). It was suggested that a ‘thin’ CMOS detector would have the most outstanding properties [1], [2] and [3] because of a reduction in the proportion of backscattered electrons. In this paper we show, theoretically (using Monte Carlo simulations of electron trajectories) and experimentally that this is indeed the case.