应变GaN量子点中激子态的研究

利用有效质量方法和变分原理,考虑内建电场效应和量子点的三维约束效应,研究了约束在GaN/AlxGa1-xN圆柱形量子点中的激子特性与量子点的结构参数以及势垒层中Al含量之间的关系.结果表明:对给定大小的量子点,随其高度的增加激子结合能出现一最大值,此时载流子被最有效的约束在量子点内;内建电场使量子点的有效带隙减小,电子、空穴产生明显分离,从而影响量子点的光学性质.理论计算的光跃迁能和实验结果一致.     

Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing

With the incorporation of nitrogen (N) into InAs quantum dots (QDs), the carrier distribution near the QD displays electron emissions from a localized N-induced defect state at 0.34?eV and a weak emission at 0.15?eV from the QD. This defect state causes drastic carrier depletion in the neighboring GaAs bottom layer near the QD, which can effectively suppress tunneling emission for the QD excited states. As a result, electrons escape from the QD ground state through thermal emission to near the GaAs conduction band, rather than through thermal emission to the QD first excited state and a subsequent tunneling to the GaAs conduction band, as observed in InAs QDs without N incorporation. Thermal annealing can weaken the defect emission and enhance the QD emission, suggesting a removal of the defect state and a recovery of carriers in the QD. Increasing annealing temperature can significantly decrease the emission time and energy of the QD emission, which is explained by a weakening of tunneling suppression due to the removal of the defect state.     

Capacitance transient analysis of different-sized InAs/GaAs quantum dot structures

The energy states of InAs/GaAs self-assembled quantum dots (QDs) were analyzed by comparing between two QD systems with different QD sizes. The electrical properties of the QD systems were investigated via capacitance-voltage measurements and capacitance transient spectroscopy (also known as deep-level transient spectroscopy) with selective carrier injection and extraction which can be achieved with very small pulse amplitude under bias variation. For the large QDs, several energy states were found with the use of selective carrier injection and extraction. The thermal-activation energies obtained from the capacitance transient spectra of the large QDs were distributed from 70 to 600 meV. This energy distribution was originated from the quantized states of the individual QDs and the size distribution of the QDs. The spectra of the small QDs showed a well-defined energy state of E(c) - 132 meV. From these results, it was estimated that two to four electrons fill a single QD under the proper measurement bias of 0.2 V pulse.     

Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance

Abstract

The negative differential capacitance (NDC) effect is observed on a titanium–oxide–silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs). The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K. We found that approximately six to eight electrons can be trapped in the valence band states of Ge QDs. We explain the NDC effect in terms of the emission of electrons from valence band states in the very narrow QD layer under reverse bias.     

Single excitons in InGaN quantum dots on GaN pyramid arrays

Fabrication of single InGaN quantum dots (QDs) on top of GaN micropyramids is reported. The formation of single QDs is evidenced by showing single sub-millielectronvolt emission lines in microphotoluminescence (μPL) spectra. Tunable QD emission energy by varying the growth temperature of the InGaN layers is also demonstrated. From μPL, it is evident that the QDs are located in the apexes of the pyramids. The fact that the emission lines of the QDs are linear polarized in a preferred direction implies that the apexes induce unidirected anisotropic fields to the QDs. The single emission lines remain unchanged with increasing the excitation power and/or crystal temperature. An in-plane elongated QD forming a shallow potential with an equal number of trapped electrons and holes is proposed to explain the absence of other exciton complexes.     

Silica fluorescent nanospheres containing a large amount of quantum dots prepared using liposomes as templates

Quantum dot (QD) fluorescent spheres have captivated many scientists because of their many potential applications in biomedical research. In this work, QD nanospheres were prepared using a novel method: incorporating QDs into nano-liposomes and then synthesising a silica shell using a lipid membrane as the template. The results showed that the nanocomposites obtained were spherical in shape, and each nanosphere contained a silica shell and the cores consisted of a large amount of QDs. Ultrathin sections of the spheres showed that the thickness of the silica shell was about 50–60?nm. Because the QD cores were coated with liposome and thick silica shell, the bright field of the silica sphere suspension was close to milk white in colour, which was different from that of the red-coloured QD solution. Although the quantum yield of the silica spheres (2.27%) was lower than that of the QDs (23.52%), these nanospheres still emitted a bright fluorescence, and there was no obvious difference between the fluorescent colour of the nanosphere suspension and the QD solution.     

The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature

The Hanle effect in InAs/GaAs quantum dots (QDs) is studied under optical orientation as a function of temperature over the range of 150-300 K, with the aim of understanding the physical mechanism responsible for the observed sharp increase of electron spin polarization with increasing temperature. The deduced spin lifetime T(s) of positive trions in the QDs is found to be independent of temperature, and is also insensitive to excitation energy and density. It is argued that the measured T(s) is mainly determined by the longitudinal spin-flip time (T(1)) and the spin dephasing time (T(2)*) of the studied QD ensemble, of which both are temperature independent over the studied temperature range and the latter makes a larger contribution. The observed sharply rising QD spin polarization degree with increasing temperature, on the other hand, is shown to be induced by an increase in spin injection efficiency from the barrier/wetting layer and also by a moderate increase in spin detection efficiency of the QD.     

Composition of self-assembled quantum dots

Abstract

Semiconductor quantum dot (QD) nanostructures have attracted increased interest in recent years because of their electronic and optical properties. A common way to make QDs is to grow a thin layer of material on a substrate with a different lattice constant. The strain between the layers induces the formation of three-dimensional islands. The electronic properties of the islands are mainly determined by their size, shape and composition. While the size and shape of QDs have been the focus of many studies, only recently has their composition been investigated. Experimental studies of the composition of QDs are reviewed and compared with the available theoretical models of QD growth. It is found that no model in the literature can satisfactorily predict QD size, shape and composition. Experimental results from studies of QDs grown under similar conditions vary substantially. Most authors, however, agree that the average composition of the QDs is different from the nominal composition of the deposited material. The composition is also found to vary from top to bottom of the QDs, which is found to have a significant influence on the electronic properties.     

Level structure of InAs quantum dots in two-dimensional assemblies

The electronic level structure of colloidal InAs quantum dots (QDs) in two-dimensional arrays, forming a QD-solid system, was probed using scanning tunneling spectroscopy. The band gap is found to reduce compared to that of the corresponding isolated QDs. Typically, the electron (conduction-band) ground state red shifts more than the hole (valence-band) ground state. This is assigned to the much smaller effective mass of the electrons, resulting in stronger electron delocalization and larger coupling between electron states of neighboring QDs compared to the holes. This is corroborated by comparing these results with those for InAs and CdSe nanorod assemblies, manifesting the effects of the electron effective mass and arrangement of nearest neighbors on the band gap reduction. In addition, in InAs QD arrays, the levels are broadened, and in some cases their discrete level structure was nearly washed out completely and the tunneling spectra exhibited a signature of two-dimensional density of states.     

Comparing intracellular stability and targeting of sulfobetaine quantum dots with other surface chemistries in live cells

The in vivo labeling of intracellular components with quantum dots (QDs) is very limited because of QD aggregation in the cell cytoplasm and/or QD confinement into lysosomal compartments. In order to improve intracellular targeting with QDs, various surface chemistries and delivery methods have been explored, but they have not yet been compared systematically with respect to the QD intracellular stability. In this work, the intracellular aggregation kinetics of QDs for three different surface chemistries based on ligand exchange or encapsulation with amphiphilic polymers are compared. For each surface chemistry, three delivery methods for bringing the nanoparticles into the cells are compared: electroporation, microinjection, and pinocytosis. It is concluded that the QD intracellular aggregation behavior is strongly dependent on the surface chemistry. QDs coated with dihydrolipoic acid-sulfobetaine (DHLA-SB) ligands diffuse freely in cells for longer periods of time than for QDs in the other chemistries tested, and they can access all cytoplasmic compartments. Even when conjugated to streptavidin, these DHLA-SB QDs remain freely diffusing inside the cytoplasm and unaggregated, and they are able to reach a biotinylated target inside HeLa cells. Such labeling was more efficient when compared to commercial streptavidin-conjugated QDs, which may be due to the smaller size of DHLA-SB QDs and/or to their superior intracellular stability.     

Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure

The role of Sb atoms present on the growth front during capping of InAs/InP (113)B quantum dots (QDs) is investigated by cross-sectional scanning tunnelling microscopy, atomic force microscopy, and photoluminescence spectroscopy. Direct capping of InAs QDs by InP results in partial disassembly of InAs QDs due to the As/P exchange occurring at the surface. However, when Sb atoms are supplied to the growth surface before InP capping layer overgrowth, the QDs preserve their uncapped shape, indicating that QD decomposition is suppressed. When GaAs(0.51)Sb(0.49) layers are deposited on the QDs, conformal growth is observed, despite the strain inhomogeneity existing at the growth front. This indicates that kinetics rather than the strain plays the major role during QD capping with Sb compounds. Thus Sb opens up a new way to control the shape of InAs QDs.     

Strain-renormalized energy spectra of electrons and holes in InAs quantum dots in the InAs/GaAs heterosystem

Analytical expressions describing the energy spectrum of electrons and holes are obtained for a quantum dot (QD) occurring in a self-consistent strain field created by an array of coherently stressed QDs. A method of taking into account the lattice mismatch at the QD-matrix interface is proposed that allows for the dependence of the mismatch parameter on the QD size and the matrix layer thickness. It is shown that the internal elastic strain arising at the QD-matrix interface influences the energy spectrum of electrons more significantly than the spectrum of holes.     

Tissue and species differences in the application of quantum dots as probes for biomolecular targets in the inner ear and kidney

Quantum dots (QDs) are useful biological probes because of the increased photostability and quantum efficiency they offer over organic fluorophores. However, toxicity concerns arise because the QD core is composed of cadmium and selenium, metals known to be unsafe for humans and animals. We investigated the feasibility of quantum dots as biological labels for imaging studies of inner ear and kidney, tissues that share a polarized epithelial arrangement and drug susceptibility. We found that methods for labeling the actin cytoskeleton of monolayers of cultured amphibian kidney cells (Xenopus A6) with 565 nm QD conjugates were not feasible with large Xenopus inner ear organs. We then compared the uptake of 565 nm cationic peptide-targeted and nontargeted QDs in live kidney cell lines (amphibian, A6 and XLK-WG; human, HEK-293). Results showed that targeted QDs are internalized by all three kidney cell lines, and that nontargeted CdSe nanocrystals are sequestered only by human kidney cells. CellTracker Red CMTPX confirmed the membrane integrity and viability of HEK-293 cells that internalized QDs. Our results demonstrate species and tissue differences in QD uptake and labeling, and underscore the need for long-term studies of QD toxicity and fate in cells     

Fluorescent and nonlinear optical features of CdTe quantum dots

The study of photoluminescence and nonlinear optical properties of red (emitted at 650 nm), yellow (emitted at 570 nm) and green (emitted at 530 nm) CdTe quantum dots (QD) spin coated on quartz substrate that had been prepared by changing the ratio between octadecylphosphonic acid and octadecence within 0.1:1–1:1 was carried out. Spectral width of the emission spectra indicates an enhancement with the increasing of QDs sizes, namely ca. 25, 28 and 50 nm for the QD size of 2.5, 3.5 and 5 nm, correspondingly. The entire QDs samples feature a spherical morphology with a relatively narrow size distribution. The optical second harmonic generation (SHG) stimulated by coherent bicolor treatment at 1,540 nm and its second harmonic generation was studied versus the laser light power density and incident angle.     

Structural,optical and morphological studies of undoped and Zn-doped CdSe QDs via aqueous route synthesis

Undoped and Zn-doped CdSe quantum dots (QDs) were successfully synthesized by the chemical precipitation method. The structural, optical and morphological properties of the synthesized undoped and Zn-doped CdSe QDs were studied by X-ray diffraction (XRD), UV–visible absorption spectroscopy, photoluminescence (PL) spectroscopy, fluorescence lifetime spectroscopy, scanning electron microscopy (SEM), field emission transmission electron microscopy (FE-TEM) and FTIR. The synthesized undoped and Zn-doped CdSe QDs were in cubic crystalline phase, which was confirmed by the XRD technique. From the UV–visible absorption spectral analysis, the absorption wavelengths of both undoped and Zn-doped CdSe QDs show blue-shift with respect to their bulk counterpart as a result of quantum confinement effect. The highest luminescence intensity was observed for CdSe QDs doped with 4% Zn by PL studies. TEM analysis shows that the prepared QDs are spherical in shape.     

Photophysics of dopamine-modified quantum dots and effects on biological systems

Semiconductor quantum dots (QDs) have been widely used for fluorescent labelling. However, their ability to transfer electrons and holes to biomolecules leads to spectral changes and effects on living systems that have yet to be exploited. Here we report the first cell-based biosensor based on electron transfer between a small molecule (the neurotransmitter dopamine) and CdSe/ZnS QDs. QD-dopamine conjugates label living cells in a redox-sensitive pattern: under reducing conditions, fluorescence is only seen in the cell periphery and lysosomes. As the cell becomes more oxidizing, QD labelling appears in the perinuclear region, including in or on mitochondria. With the most-oxidizing cellular conditions, QD labelling throughout the cell is seen. Phototoxicity results from the creation of singlet oxygen, and can be reduced with antioxidants. This work suggests methods for the creation of phototoxic drugs and for redox-specific fluorescent labelling that are generalizable to any QD conjugated to an electron donor.     

Optically-induced charge storage in self-assembled InAs quantum dots

We present results on spectrally resolved photo-resistance studies of optically-induced charge storage effects in self-organized InAs quantum dots (QDs). The stored charge can be detected and erased electrically. The investigated structure designed for electron or hole storage in the QDs consists of a modulation doped two-dimensional channel which was grown on top of a layer of InAs QDs, separated by an asymmetric tunnel barrier. Our results show that optical QD charging with spectral resolution provides information on the charging dynamics and on the quantity and spectral dependence of stored charges in the QDs. This is a novel technique by which QD excitation spectra can be studied. Spectrally resolved storage effect measurements on electrons as well as on holes allowed to investigate thermal redistribution of carriers in the quantum dot layer. It was found that only at low temperatures carriers can be stored selectively over long time scales in the InAs QDs. The charge storage effect is observable for several hours at temperatures up to 170 K, for several seconds up to 250 K due to an increase in thermal emission of stored charges.     

The research progress of quantum dot lasers and photodetectors in China

Self-assembled In(Ga)As/GaAs quantum dots (QDs), known as "artificial atoms" for their fully quantized electronic states, show unique physical properties and new prospects for applications. Based on the QDs, an increasing number of leading laboratories on the world engage in developing novel optoelectronic devices with special advantages over existing devices. This paper reviews the current research developments in self-assembled QD devices in China, covering QD lasers and inter sub-level QD photodetectors. QD devices in China are undergoing a rapid advance and have achieved the world's best results in terms of certain characteristics.     

Spectral properties of multiply charged semiconductor quantum dots

Spectrally resolved fluorescence imaging of single CdSe/ZnS quantum dots (QDs), charged by electrospray deposition under negative bias has revealed a surprising net blue shift (～60 meV peak-to-peak) in the distribution of center frequencies in QD band-edge luminescence. Electrostatic force microscopy (EFM) on the electrospray QD samples showed a subpopulation of charged QDs with 4.7 ± 0.7 excess electrons, as well as a significant fraction of uncharged QDs as evidenced by the distinct cantilever response under bias. We show that the blue-shifted peak recombination energy can be understood as a first-order electronic perturbation that affects the band-edge electron- and hole-states differently. These studies provide new insight into the role of electronic perturbations of QD luminescence by excess charges.     

Electro-refraction in quantum dots: dependence on lateral size and shape

Photonic switches require low-loss polarization-independent phase-shifting elements. In a composite quantum well, a 0.46-mm phase shifter provides a /spl pi//4 phase shift by combining the quantum confined Stark effect (QCSE) and the carrier depletion effect. We investigate whether the discrete energy levels and the high peak absorption in quantum dots (QDs) provide an opportunity for increasing the electro-refraction. The electro-refraction in strained cylindrical InAs-GaAs QDs is explored using a numerical model based on the 4 /spl times/ 4 Luttinger-Kohn Hamiltonian. The excitonic states are calculated by matrix diagonalization with plane-wave basis states. We observe that the QCSE sharply increases with the height of the QD and is also optimized for small-radius QDs. The QCSE in pyramidal QDs is considerably larger than in a box or cylinders. We find a peak electro-refraction of /spl Delta/n=0.35 in cone-shaped pyramidal QDs, which is a factor of 35 larger than in the quantum-well case. Finally, in the waveguide geometry, we find an electro-refraction of 1.3/spl times/10/sup -2/ at a residual QD absorption of 0.15 dB/cm.