有线电视基站设备接地电阻的测量

有线电视基站电子电气设备接地电阻的大小,直接影响设备工作和人身安全.根据电子电气设备的不同,采用不同的接地装置,对接地电阻的最大允许值有不同的要求.     

有线电视基站设备接地电阻的测量

有线电视基站电子电气设备接地电阻的大小,直接影响设备工作和人身安全.根据电子电气设备的不同,采用不同的接地装置,对接地电阻的最大允许值有不同的要求.     

利用万用表测量绝缘电阻

电子电气设备的绝缘电阻一般使用兆欧表测量.故障应急时,也可用万用表来判断电子电气设备的绝缘电阻.常用的万用表测量绝缘电阻的装置如图1所示.     

常用电气设备的接地电阻测试方法探析

常用电气设备在人们的日常生活扮演着很重要的角色,而接地电阻的测试对于常用电气设备的安全使用具有很大的影响作用,因此本文以常用电气设备为研究对象,着重研究其接地电阻测试的方法。首先介绍了接地电阻的基本概念,然后分析和探讨了两种接地电阻测试的方法,即辅助电极ZC8接地电阻测试仪测试方法和非辅助电极钳型接地电阻测试仪测试方法,希望能够通过本研究对常用电气设备的接地电阻测试方面带来一定的帮助作用。     

欧盟电子、电气设备电磁场人体暴露评估标准要点

分析了现行的欧盟电子、电气设备的电磁场(EMF)人体暴露评估标准.指出不同的电子、电气设备由于其工作原理、电气结构、工作频率范围不同,其EMF暴露值的表征参数均不同.探讨了不同标准的适用原则,列举了不同电子、电气产品(如家用电器、照明设备等)的EMF评估计算方法及符合性判断准则.     

新型接触电阻检测仪的应用

互连器件接触电阻检测,一直是系统连接后判别每个接点接触是否可靠良好,必须解决的实际问题。随着高密度、小型化的互连器件在电子电气设备上的广泛应用,如何解决互连器件接触电阻的在线自动检测,己成为确保互连器件质量和可靠性的关键。文中在详细阐述接触电阻检测原理的基础上,介绍了新研制的TDO-MCR-07A多接点接触电阻检测仪特点、检测方法和主要技术参数,以及连接电脑和工装组成自动检测系统后,成功用于保险丝盒接触电阻自动检测的实例。     

电子传感器在电气设备监测中的应用研究

随着电力行业的快速发展,人们对该行业的安全性、可靠性提出了更高的要求,但传统电力系统中基本构成部分的电气设备不具备自动化监测功能,所以无法实现对不同地区用电消耗的控制需求。为提高电气设备监测系统的功能性,改造与升级电气设备的监测价值,本文提出了将电子传感器应用在电气设备监测中的研究,讨论电子传感器在电气设备监测系统中的积极应用所实现的功能优化。     

你的电器漏电吗？——DIY数字绝缘电阻表

由电力网供电的电气设备，如电机、电缆、家用电器等，在工作过程中常常会发生漏电这个安全问题，漏电的原因主要是绝缘材料破损、老化或是带电部分和设备外壳绝缘强度不够。为了避免事故发生，在工厂中就要求定期测量各种电气设备的绝缘电阻，当阻值小于规定的最低绝缘电阻值（不同电气设备标准可能不同）时，说明该电气设备已不能使用，必须修理或更换。     

引线式电阻器失效分析与研究

电阻也称电阻器,顾名思义对电流起到阻碍作用.电阻器是电气、电子设备中用得最多的基本元件之一.主要用于控制和调节电路中的电流和电压,或用作消耗电能的负载.导体电阻越大表示导体对电流的阻碍就越大,不同的导体电阻一般不同,电阻将会导致电子流通量的变化,电阻越小电子流通量就越大,反之亦然.它与半导体或电容器能组成高通或低通滤波...     

欧盟、北美、日本关于电子电气产品中有害物质管控法规现状

广泛收集了欧盟、北美和日本这些我国电子电气设备主要出口国家及地区的电子电气设备有害物质相关法规，对之进行了分析研究。并在这些研究的基础上。提出了有关电子电气设备有害物质合格评定以及在我国推行环境化设计的建议。     

有线电视基站设备的接地保护与接零保护

保护接地和保护接零是防止电气设备意外带电造成触电事故的基本技术措施，保护接地是利用接地电阻使设备外壳与地等电位，保护接零是利用零线形成一相短路使保护器切断电源，二者又有相同之处，即都要求有一定的接地装置。在实际工作中，要根据具体情况分别处置，确保人身安全。     

Conducted IEMI threats for commercial buildings

While most of the emphasis has been focused on the radiated threat represented by intentional electromagnetic interference, it is clear that the threat from conducted disturbances should not be neglected. Conducted threats include those that are produced by the cable coupling of radiated fields and from the direct injection of conducted disturbances into the wiring of a building. It is well known that in the majority of cases, cables provide the most efficient means of transporting potentially damaging energy into equipment. The first part of this paper describes how electrical disturbances can impact electronic equipment inside a building through the power and earthing circuits. Measured data are summarized to illustrate how electrical signals propagate through the power and earthing circuits from the outside to the inside and what levels of signals create problems with electronic equipment. With this understanding of the impact of transient waveforms on electronic equipment and how these disturbances can propagate throughout a building, calculations are then used to evaluate different types of conducted threats to buildings.     

电子系统设计中的接地技术

对电子系统接地的目的、种类和方法做了较全面的介绍，对接地方法的不同对电子电路性能的影响进行了分析。     

p型GaN器件欧姆接触的研究进展

Ⅲ-Ⅴ族GaN基材料以其在紫外光子探测器、发光二极管、高温及大功率电子器件方面的应用潜能而被广为研究.低阻欧姆接触是提高GaN基器件光电性能的关键.由于低掺杂和空穴电离等原因,p-GaN上的低阻接触难于制备.制备稳定的P-GaN欧姆接触一直是一个挑战.主要通过对有关英语期刊文献的归纳分析,介绍了近年来在改进P-GaN工艺、提高欧姆接触性能等方面的研究进展.     

Textile Resistance Switching Memory for Fabric Electronics

A new type of wearable electronic device, called a textile memory, is reported. This is created by combining the unique properties of Al‐coated threads with a native layer of Al₂O₃ as a resistance switching layer, and carbon fiber as the counter‐electrode, which induces a fluent redox reaction at the interface under a small electrical bias (typically 2–3 V). These two materials can be embroidered into an existing cloth or woven into a novel cloth. The electrical resistance of the contacts is repeatedly switched by the bias polarity, as observed in the recently highlighted resistance switching memory. The devices with different structure from the solid metal‐insulator‐metal devices show reliable resistance switching behaviors in textile form by single stitch and in array as well that would render this new type of material system applicable to a broad range of emerging wearable devices. Such behavior cannot be achieved in other material choices, revealing the uniqueness of this material system.     

Fatigue‐Resistant Bioinspired Graphene‐Based Nanocomposites

Graphene is an attractive building block for constructing functional materials of flexible electronic devices, due to its extraordinary mechanical and electrical properties. Up to now, large amounts of high‐performance graphene‐based nanocomposites are fabricated. However, the fatigue behavior of graphene‐based nanocomposites, a key parameter for flexible electronic devices, is rarely investigated. According to the fatigue mechanisms of thermosetting polymer composites, the fatigue resistance of graphene‐based nanocomposites can be significantly improved by effectively restricting the crack growth. Natural nacre demonstrates unique multisuppression of crack propagation, which is attributed to its sophisticated interfacial architecture over multiple length scales, resulting in remarkable fracture toughness. The crack suppression mechanisms corresponding to different interfacial design strategies within bioinspired graphene‐based nanocomposites (BGBNs) are summarized in this feature article. The static mechanical properties, electrical conductivity, and fatigue resistance of these BGBNs are compared and discussed. The synergistic effect from various interfacial interactions and building blocks is highlighted to serve as the guidance for constructing novel fatigue‐resistant BGBNs. The promising applications of fatigue‐resistant BGBNs in flexible electronic devices are reviewed, and several challenges and corresponding solutions are proposed. The perspective of fatigue‐resistant BGBNs for fundamental research and commercial application is depicted.     

IT类电子产品3C工厂检查的现场指定试验探讨--接地电阻试验

文章通过一些实例介绍了IT类电子产品3C工厂检查的现场指定接地电阻试验的测试要求、测试原理、测试部位和测试注意事项。     

n型GaN欧姆接触的研究进展

Ⅲ-Ⅴ族GaN基材料以其在紫外光子探测器、发光二极管、高温及大功率电子器件等方面的应用潜能而被广为研究.其中,低阻欧姆接触是提高GaN基器件光电性能的关键.金属/GaN界面上较大的欧姆接触电阻一直是影响器件性能及可靠性的一个问题.对于各种应用来说, GaN的欧姆接触需要得到改进.通过对相关文献的归纳分析,本文主要介绍了近年来在改进n-GaN工艺,提高欧姆接触性能等方面的研究进展.     

电子通信设备中的接地问题浅析

电子通信设备中的接地技术,关系着整台设备的干扰特性及其抗干扰性能。根据接地干扰产生的原理,对电子通信设备的接地抗干扰技术进行了分析,提出了一些有效的抑制干扰的接地方法。这些方法在工程实践中得到了应用,有效地提高了电子通信设备的抗干扰能力。     

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto‐)electronic applications. One example is the organic field‐effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.