拼元式多色薄膜电致发光器件

引言自从橙黄色(ZnS:Mn)单色薄膜电致发光(TFEL)显示器件达到商业性应用阶段以来,人们把大量的工作都集中于研究彩色TFEL。近年来,三基色TFEL器件的亮度和效率都有了很大的提高。下一个目标就是通过组合基色电致发光来产生多色EL器件。方法有两种:一种是层叠不同颜色的发光薄膜;另一种是拼排不同颜色的发光薄膜单元(拼元式)。     

薄膜电致发光及其发展状况

阐述电致发光的机理、几种电致发光器件的结构及目前所用发光材料的特性,并介绍彩色TFEL显示器件的最新进展及应用情况。     

具有荧光粉图形的多色薄膜电致发光器件

前言自从用橙黄色荧光粉 ZnS:Mn)制成的单色薄膜电致发光(TFEL)器件达到商品化批量生产以来,人们为研制彩色 TFEL 器件付出了巨大努力。近年来的研究结果表明三基色 TFEL 器件的亮度和效率都得到了极大的提高。     

彩色薄膜电致发光技术

多色薄膜电致发光(TFEL)显示是一个迅速崭露头角的彩色平板显示技术。去年有四个显示研究实验室报导了这类器件。本文将对 TFEL 磷光体和器件结构方面所取得的进展作一综述。     

薄膜电致发光平板显示器件

本文描述交流薄膜电致发光(ACTFEL)平板显示器件的基本工作原理,结构,设计规则和驱动方法,叙述ACTFEL显示的荧光体和绝缘体的一些基本总是以及采用的各种工艺;介绍了多色TFEL显示的结构和制作技术,还介绍了它们进展水平以及未来发展趋势.     

薄膜电致发光技术

薄膜电致发光(thinfilmelectroluminescece,TFEL)具有主动发光、全固体化、耐冲击、视角大、反应快、工作温度范围宽以及图像清晰度高等诸多优点,曾经被认为是一种很有前景的平板显示技术。但是,由于这种显示技术存在的固有问题和其它与之的竞争显示技术的快速发展的影响,使得TFEL虽经过30多年的发展,但一直不能实现大规模产业化。本文对TFEL技术和产业化做一个介绍。     

一种新型的薄膜电致发光材料——碱土硒化物SrSe

在目前薄膜电致发光(以下简称 TFEL)器件的研究中,首先要解决的是全色化问题。为实现 TFEL 的全颜色,注意力比较集中在以碱土硫化物作为基质的材料上。如 Barrow 等人道报了具有高亮度蓝色发光的 SrS:CeF_3交流 TFEL 器件,Tanaka 等人报道的 CaS:Ce、Cl 交流 TFEL 器件具有很亮的绿色发射。     

叠层绝缘结构薄膜电致发光显示器件

采用叠层绝缘结构制成了密度为4.2线/毫米、大容量(704×1024像点)的薄膜电致发光(TFEL)显示屏。本文讨论了在金属电极和第二个 Ta_2O_5绝缘层之间插入一层自愈型绝缘体,改善了击穿现象使漫延方式变为自愈方式。这种器件比常规 TFEL器件的发光效率和光输出分别提高1.6和1.8倍。这种器件还使用了与 ZuS:Mn 发射体邻接的低阻 SiO_2薄膜层。     

SrS:Ce,K蓝色薄膜电致发光器件中的记忆效应

近些年来,人们已经发现减土硫化物如SrS和CaS可能是用于彩色薄膜电致发光(TFEL) 的较好的基质材料。为了实现具有大量家元和较高亮度的矩阵显示,一个重要并且必需的特性是在ZnS:Mn TFEL器件中所观察到的那种固有的记忆效应。但直到现在仅有几篇关圩碱土硫化物TFEL器件记忆效应的报导。本文报导了SrS:Ce,K蓝色TFEL器件的固有的记忆效应。这种TFEL器件由一个夹在两个绝缘层之间的SrS:Ce,K EL发光层组成。SrS:Ce,K层夹在两个ZnS层中间,ZnS层的作用是保护SrS:Ce,K层。为了制备有效的SrS:Ce,K发光膜,采用     

光电薄膜技术的新动向

在当今光电技术日新月异发展的形势下,薄膜技术已渗透到光电子学的多种领域中。随着光纤通讯、光计算机、光信息存储与传输的迅猛发展与应用,各种新型光电薄膜器件与薄膜技术正在相辅相成地不断开拓中。光电薄膜器件的产品也以7.7％的年增长率发展着。市场对于光电薄膜器件产品的要求不仅是其光电物理特性,而且包括应用于整机系统中的可靠性、再现性和一致性。每一种光电薄膜器件的产品化都伴随着它的成套技术设备的定型。没有     

Compartmentalized Thin Films with Customized Functionality via Interfacial Cross‐linking of Protein Cages

Hybrid thin films with a high loading and homogeneous dispersion of functional nanoparticles (and/or molecules) find applications in (bio)‐sensors and electronic devices. The fabrication of such hybrid thin films, however, suffers from the complex and diverse surface and physicochemical properties of individual nanoparticles. To address this challenge, a facile and general strategy toward compartmentalized thin films through the interfacial cross‐linking of viral protein cages is reported. Employing these protein cages, gold nanoparticles, as well as enzyme horseradish peroxidase, are encapsulated into virus‐like particles and then cross‐linked into thin films with a thickness varying from monolayer to submicron dimensions. These compartmentalized thin films not only ensure that the cargo is homogeneously dispersed, but also display good catalytic activity. This strategy is, in principle, applicable for a wide range of (bio)‐organic nanocontainers, enabling the versatile fabrication of 2D thin films with extensive application prospects.     

高耐压LDMOS用的高K薄膜湿法刻蚀研究

为了对横向双扩散MOSFET(LDMOS)器件所采用的锆钛酸铅(PZT)高介电常数(高K)薄膜进行微图形化,对湿法刻蚀过程中腐蚀液、光刻、刻蚀等工艺进行了优化研究,发现由BOE+HCl+HNO3+H2O+缓冲剂组成的腐蚀液刻蚀效果较好。刻蚀结果表明,所刻蚀薄膜的厚度约为600nm,最小线条宽度约为3μm,侧蚀比减小到1.07∶1,符合功率器件制备的尺度要求,由此所制备的LDMOS器件耐压提高了近2倍。     

Sputter deposition of phosphors for electroluminescent flat panel displays

Thin film electroluminescent (TFEL) phosphors for flat panel displays have been produced by several different growth methods including atomic layer epitaxy, chemical vapor deposition, and sputter deposition. There is a great deal of interest in sputter deposition due to the extensive knowledge base and equipment from other existing thin film manufacturing. However, deposition of sulfide-based TFEL phosphors by conventional radio frequency magnetron sputtering has proven to be difficult due to the formation of negative sulfur ions near the target which are accelerated to the growing film by the self-bias developed on the target. This negative-ion resputtering can result in amorphization or re-sputtering of the phosphor films. In severe cases, a net sputtering of the substrate can result. In order to remedy this negative ion resputtering problem, modifications of the magnetron geometry and ion-beam sputtering have been evaluated for production of Ca_xSr_1−xGa₂S₄:Ce and SrS:Ce TFEL phosphors. Sputter deposited TFEL films also typically require a postdeposition anneal which adds to expense and can cause other problems for the flat panel display. Ion-beam assist during deposition of undoped ZnS was studied as a method to induce surface-atom mobility and a more crystalline as-deposited film for use in monochrome TFEL displays.     

溅射功率和气氛对Sialon薄膜，介电性能的影响

采用射频磁控溅射法分别在Ar/N2和Ar/O2气氛中制备了厚度为80～300nm的SiMon薄膜,研究了沉积功率对SiMon薄膜的介电性能的影响.发现在Ar/N2气氛中沉积的Sialon薄膜具有较高的介电常数,漏电流密度和介电损耗也稍大.在Ar/N2气氛下沉积的SiMon薄膜的介电常数在4.8～8.5之间,反映介电损耗的参数△Vy在0.010～0.045V之间,在50MV/m直流电场下的正、反向漏电流密度在10-10～10-8数量级,击穿场强在201～476 MV/m;在Ar/O2气氛下沉积的SiMon薄膜的介电常数在3.6-5.3之间,反映介电损耗的参数△Vy小于0.01V,在50MV/m直流电场下的正、反向漏电流密度在10-10～10-9数量级,击穿场强在260～305 MV/m之间.该绝缘薄膜应用于以Zn2SixGe1-xO4:Mn为发光层的无机EL显示器件和以IGZO为有源层的TFT器件中获得了较好的结果.     

薄膜晶体管研究进展

薄膜晶体管是液晶显示器的关键器件，对显示器件的工作性能具有十分重要的作用。本文论述了薄膜晶体管的发展历史，描述了薄膜晶体管的工作原理，分析了非晶硅薄膜晶体管、多晶硅薄膜晶体管、有机薄膜晶体管、ZnO活性层薄膜晶体管的性能结构特点与最新进展，并展望了薄膜晶体管的应用。     

硅基硫化锌薄膜的溅射法生长技术

利用射频磁控溅法在Si衬底上制备ZnS薄膜,用X射线衍射技术对薄膜的结构相变进行研究,揭示了Si衬底上ZnS薄膜的微观结构和相变特征与溅射功率的关系,为寻找高新发光材料提供依据。     

Ferroelastic Strain Induced Antiferroelectric‐Ferroelectric Phase Transformation in Multilayer Thin Film Structures

Coupling effects among mechanical, electrical and magnetic parameters in thin film structures including ferroic thin films provide exciting opportunity for creating device functionalities. For thin films deposited on a substrate, their mechanical stress and microstructure are usually determined by the composition and processing of the films and the lattice and thermal mismatch with the substrate. Here it is found that the stress and structure of an antiferroelectric (Pb_0.97,La_0.02)(Zr_0.90,Sn_0.05,Ti_0.05)O₃ (PLZST) thin film are changed completely by a ferroelastic strain in a magnetic shape memory (MSM) alloy Ni‐Mn‐Ga (NMG) thin film on the top of the PLZST, despite the existence of the substrate constraint. The ferroelastic strain in the NMG film results in antiferroelectric (AFE) to ferroelectric (FE) phase transformation in the PLZST layer underneath. This finding indicates a different strategy to modulate the structure and function for multilayer thin films and to create unprecedented devices with ferroic thin films.     

Dielectric Characteristics of Ba_(0.65)Sr_(0.35)TiO_3 Thin Films by Sol-Gel Method

Ferroelectric Ba0.65Sr0.35TiO3(BST) thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μC/cm2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 °C exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 °C. The dielectric loss tangent of BST thin films at 100 kHz is less than 0.04. As a result,the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.     

Microdomain Transformations in Mosaic Mesocrystal Thin Films

An easy design route via simple evaporation is reported for macroscopic mosaic thin films comprising the quaternary system of dl ‐lysine·HCl, poly(acrylic acid), water, and EtOH. By depositing droplets of the quaternary dispersions onto hydrophilic cover slips, the formation of macroscopic crack‐free mosaic mesocrystal thin films are produced. The formation follows a multistage crystallization process, which includes the formation of a polymer‐induced liquid‐precursor (PILP) phase, the formation of spherulitic thin films, and the recrystallization of mosaic mesocrystal thin films. A slow cooling rate is noted to be beneficial for the mesocrystal thin films, enabling the films to be crack‐free and to display low surface roughness at the nanoscale.