钴、镍纳米线及其异质结的制备与磁性研究

采用脉冲电沉积技术在氧化铝模板中制备了单晶钴、镍纳米线阵列和镍/钴纳米线异质结阵列.分别用场发射扫描电镜、透射电镜、X射线衍射仪、物理性能测试系统对纳米线阵列的微观形貌、结构和性能进行了表征与研究.结果表明,所制备的磁性纳米线有很大的长径比,易磁化方向均为纳米线长轴方向.纳米线异质结阵列在易磁化方向具有较大的矫顽力和矩形比,可用作高密度垂直磁记录材料.     

电化学制备Bi2Te3纳米线用于微型温差发电器

借助于电化学沉积的方法,在氧化铝纳米孔内生长Bi2Te3材料,从而形成温差电纳米线阵列．利用SEM,XRD and TEM分析手段对制备的纳米线形貌和结构进行了分析,测量了纳米线的组成和温差电性能．p型和n型Bi2Te3纳米线材料的Seebeck系数经过测量分别为260μV／K和-188μV／K（307K）,比同类的块状温差电材料性能高．同时研究了沉积电位对氧化铝模板中纳米孔的填充率的影响,并对纳米线阵列的电阻进行了测量．尝试了利用n型和P型Bi2Te3纳米线阵列制备一种新型的微型温差发电器．     

ZnO纳米线阵列修饰对材料表面浸润性调控

采用溶胶-凝胶法制备了ZnO薄膜,利用溶剂热沉积法获得大面积均匀ZnO纳米线阵列。通过对水在ZnO材料表面的浸润性研究,发现薄膜材料表面的粗糙度对ZnO膜亲水性有增强作用,而周期性ZnO阵列微结构表面可以实现其疏水性质增强效果。同时从理论上分析了这两种现象的物理机制,讨论了空气填隙对ZnO纳米线阵列表面的浸润性质的敏感性。制备出ZnO纳米线阵列的表观接触角约为103°,具有较强的疏水性质,可为进一步的ZnO光流控研究提供实验基础。     

纳米晶复合有序多孔材料的研究进展

有序多孔材料具有大小均匀、排列有序的孔道,并且其孔径在一定范围内连续可调,因此以有序多孔材料为模板,合成均匀负载的纳米粒子和有序阵列的纳米线得到广泛研究.综述了以氧化铝、氧化硅、氧化钛有序多孔材料为模板,合成纳米颗粒和纳米线阵列的方法.     

消息报道

正宁波材料所提出金属陶瓷超材料薄膜制备新方法近日,中国科学院宁波材料技术与工程研究所高俊华副研究员和曹鸿涛研究员提出了金属陶瓷超材料薄膜制备新方法,采用传统的射频共溅射沉积工艺,辅以衬底偏压,制备了定向排布Ag金属纳米线/氧化铝陶瓷复合超材料薄膜,纳米线间距(轴心到轴心)进入sub-5nm区间,阵列中纳米线平均直径约为3nm;纳米线长     

纳米线阵列及纳米图形制备技术的研究进展

当今纳米技术研究的前沿和热点之一是将纳米线按一定方式排列与组装构成纳米线阵列及纳米图形,它们是下一代纳米结构器件设计的材料基础,在激光技术、信息存储及计算技术、生物技术等各领域均有广阔的应用前景.介绍了在纳米线阵列材料制备以及纳米图形制作方面的技术研究进展,详述了模板法、自组装法以及纳米刻蚀法等技术的发展.     

合成和表征NiFe2O4纳米线阵列

采用真空灌注结合溶胶-凝胶和氧化铝模板法,在多孔氧化铝模板中制备了平均直径为50 nm的NiFe2O4纳米线阵列.X射线衍射结果显示所制备的纳米线是纯相的NiFe2O4纳米线,透射电镜和电子衍射的结果显示已制备的纳米线是多晶的且表面光滑,场发射扫描电镜图片显示纳米线是大面积且平行有序的、纳米线的长度和所用的氧化铝模板的厚度相当.磁测量的结果显示此纳米线阵列有形状各向异性,同块状材料相比矫顽力有所增强.对纳米线的生长机理做了简单的讨论.     

镍掺杂四氧化三钴纳米线阵列的制备及其超级电容特性

采用直流电化学沉积与高温氧化相结合的合成方法, 在氧化铝模板的辅助下, 成功制备了一种新颖的Ni掺杂的Co₃O₄纳米线阵列, 利用X射线衍射仪、扫描电镜和高分辨透射电镜等对所制备的纳米线阵列的物相和形貌进行了表征, 结果表明：所制备的Ni掺杂Co₃O₄纳米线形貌和尺寸均匀、垂直于基底排列, 纳米线的平均直径约为80 nm, 长度约为1.4 μm, 整个纳米线由纳米颗粒堆积而成, 其中Co : Ni的比例约为20 : 1。利用循环伏安和恒流充放电技术在2 mol/L的KOH电解液中对材料的电化学性能进行了测试, 结果显示所制备的纳米线阵列具有优异的电化学电容特性, 当电流密度为10 mA/cm²时, 纳米线阵列的面积比电容为173 mF/cm², 经过1000次充放电后, 比电容值仍能保持最初值的98%, 表现出良好的循环稳定性。优异的性能可归因于材料的比表面积较大以及镍掺杂后材料导电特性的提高。     

几何因素对铁磁性纳米线阵列磁滞回线的影响

讨论了铁磁性纳米线磁滞回线的特点及其影响因素，使用蒙特卡洛方法模拟了在周期性边界条件下的磁性纳米线阵列的磁滞回线，研究了纳米线的几何因素对铁磁性纳米线阵列磁滞回线的影响．研究发现，纳米线的直径不均匀程度越大，纳米线阵列磁滞回线的剩余磁化强度越小，饱和磁化强度越大，矫顽力则基本上不受影响；在一定条件下，纳米线长度的增加，则会使纳米线阵列磁滞回线的剩余磁化强度、矫顽力和饱和场强均有所增大，而纳米线长度的不均匀程度则对纳米线阵列的磁滞回线没有明显的影响。     

铝基磁性铁纳米线阵列吸波材料的制备与吸波性能

采用铝基板阳极氧化-电沉积制备了磁性铁纳米线阵列.吸波性能测试表明,铝基磁性铁纳米线阵列吸波材料吸波层厚度仅为几十微米时,最大反射衰减可达到-6.5dB.将铝基板喷砂预处理可改变随后阳极氧化铝膜结构;与未经喷砂预处理的铝基板相比,经喷砂预处理的铝基板阳极氧化-电沉积制成的铝基磁性铁纳米线阵列吸波材料吸波性能较好,吸收频带较宽;在8～18GHz频段,喷砂试样反射衰减均在-2dB以下.     

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil

Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650?°C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200?nm and tips with diameter of about 10-50?nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7?V?μm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as?emitters.     

An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters

A method was developed to grow ordered silicon nanowire with NiSi(2) tip arrays by reacting nickel thin films on silica-coated ordered Si nanowire (NW) arrays. The coating of thin silica shell on Si NW arrays has the effect of limiting the diffusion of nickel during the silicidation process to achieve the single crystalline NiSi(2) NWs. In the meantime, it relieves the distortion of the NWs caused by the strain associated with formation of NiSi(2) to maintain the straightness of the nanowire and the ordering of the arrays. Other nickel silicide phases such as Ni(2)Si and NiSi were obtained if the silicidation processes were conducted on the ordered Si NWs without a thin silica shell. Excellent field emission properties were found for NiSi(2)/Si NW arrays with a turn on field of 0.82 V μm(-1) and a threshold field of 1.39 V μm(-1). The field enhancement factor was calculated to be about 2440. The stability test showed a fluctuation of about 7% with an applied field of 2.6 V μm(-1) for a period of 24 h. The excellent field emission characteristics are attributed to the well-aligned and highly ordered arrangement of the single crystalline NiSi(2)/Si heterostructure field emitters. In contrast to other growth methods, the present growth of ordered nickel silicide/Si NWs on silicon is compatible with silicon nanoelectronics device processes, and also provides a facile route to grow other well-aligned metal silicide NW arrays. The advantages will facilitate its applications as field emission devices.     

Single-crystal silver nanowires: Preparation and Surface-enhanced Raman Scattering (SERS) property

Ordered Ag nanowire arrays with high aspect ratio and high density self-supporting Ag nanowire patterns were successfully prepared using potentiostatic electrodeposition within the confined nanochannels of a commercial porous anodic aluminium oxide (AAO) template. X-ray diffraction and selected area electron diffraction analysis show that the as-synthesized samples have preferred (220) orientation. Transmission electron microscopy and scanning electron microscopy investigation reveal that large-area and ordered Ag nanowire arrays with smooth surface and uniform diameter were synthesized. Surface-enhanced Raman Scattering (SERS) spectra show that the Ag nanowire arrays as substrates have high SERS activity.     

Two‐Dimensional Self‐Organization of an Ordered Au Silicide Nanowire Network on a Si(110)‐16 × 2 Surface

A well‐ordered two‐dimensional (2D) network consisting of two crossed Au silicide nanowire (NW) arrays is self‐organized on a Si(110)‐16 × 2 surface by the direct‐current heating of ≈1.5 monolayers of Au on the surface at 1100 K. Such a highly regular crossbar nanomesh exhibits both a perfect long‐range spatial order and a high integration density over a mesoscopic area, and these two self‐ordering crossed arrays of parallel‐aligned NWs have distinctly different sizes and conductivities. NWs are fabricated with widths and pitches as small as ≈2 and ≈5 nm, respectively. The difference in the conductivities of two crossed‐NW arrays opens up the possibility for their utilization in nanodevices of crossbar architecture. Scanning tunneling microscopy/spectroscopy studies show that the 2D self‐organization of this perfect Au silicide nanomesh can be achieved through two different directional electromigrations of Au silicide NWs along different orientations of two nonorthogonal 16 × 2 domains, which are driven by the electrical field of direct‐current heating. Prospects for this Au silicide nanomesh are also discussed.     

Template-based fabrication of nanowire-nanotube hybrid arrays

The fabrication and structure characterization of ordered nanowire-nanotube hybrid arrays embedded in porous anodic aluminum oxide (AAO) membranes are reported. Arrays of TiO(2) nanotubes were first deposited into the pores of AAO membranes by a sol-gel technique. Co?nanowires were then electrochemically deposited into the TiO(2) nanotubes to form the nanowire-nanotube hybrid arrays. Scanning electron microscopy and transmission electron microscopy measurements showed a high nanowire filling factor and a clean interface between the Co nanowire and the TiO(2) nanotube. Application of these hybrids to the fabrication of ordered nanowire arrays with highly controllable geometric parameters is discussed.     

三维结构磷酸铁锂纳米线阵列的制备及其电化学性能

采用阳极氧化铝模板(AAO),通过溶胶-凝胶法制备出磷酸铁锂(LiFePO_4)纳米线阵列。场发射扫描电镜(FESEM)和透射电镜(TEM)表征均说明制得的LiFePO_4阵列是分散均匀且相互平行的。X射线衍射(XRD)和能谱图(EDS)表征均说明LiFePO_4纳米线是纯相橄榄石型结构。电化学性能测试表明纳米线阵列具有较好的循环稳定性,1C电流密度下循环100次后容量几乎不衰减,容量保持率为99.1%,10C电流密度下循环350次后容量保持率为91.6%。纳米线阵列的倍率性能较同等条件下制备的纳米粉体有较大提升,0.1C、10C电流密度下容量可分别达156.4mAh/g、106.9mAh/g。     

荧光聚氯乙烯纳米线阵列的制备及研究

采用溶液浸润AAO模板法,将自制的荧光稀土配合物Eu（aspirin）3 Phen掺杂到聚氯乙烯（PVC）溶液中,制备了有荧光特性的一维复合纳米线阵列。并采用扫描电镜（SEM）、能谱分析（EDS）及透射电镜（TEM）进行了结构分析,结果表明：掺杂稀土铕配合物的聚氯乙烯制备了规整的纳米线阵列,铕配合物存在于纳米线阵列中。此外,荧光发射光谱研究表明,复合纳米线阵列具有优并的发光性能,归因于稀土配合物在纳米阵列中能更好地分散。     

Growth of TiO2 nanowire bundle arrays and their application in dye-sensitized solar cells

Highly oriented single-crystalline TiO₂ nanowire bundle arrays on transparent conductive fluorine-doped tin oxide substrates are prepared by hydrothermal method using the precursors of titanium butoxide, deionized water and hydrochloric acid. The structure and morphology characteristics of all the samples have been analyzed by X-ray diffraction (XRD), scanning electron microscopy and transmission electron microscopy. Results show that the diameter, length, and density of the nanowire bundle arrays can be varied by changing the growth parameters, such as growth time, initial reactant concentration and acidity. The enhanced (002) peak in XRD patterns indicate that the nanowire is well crystallized and grow perpendicular to the substrate. The high resolution transmission electron microscope images and selected-area electron diffraction patterns confirm that there are approximately 10–30 nanowires in each bundle. The nanowire is single crystalline. Dye-sensitized solar cells assembled from oriented TiO₂ nanowire bundle arrays as the photoanode are studied. The light-to-electricity conversion efficiency is about 2.17 %.     

Synthetic control of large-area, ordered silver nanowires with different diameters

Silver (Ag) nanowires with different diameters (28, 38, 55, 80, 200 nm) have been successfully fabricated into the anodic alumina membranes (AAMs) by direct-current electrochemical deposition technique. X-ray diffraction and selected area electron diffraction analysis show that the as-synthesized samples have preferred (220) orientation independent of the nanowire diameters. Transmission electron microscopy and field-emission scanning electron microscopy investigation reveal that the large-area and highly ordered Ag nanowire arrays with smooth surface and uniform diameter are synthesized, and they have the high aspect ratio. The formation mechanism of the silver nanowires is also discussed. The nanowire arrays with different diameters may have potential applications in the future nanodevices.     

图案化金属铜纳米线阵列的制备与表征

采用紫外线光刻技术与电化学沉积相结合的方法,成功制备了不同图案的铜纳米线阵列:一种是圆形图案;另一种是QDU图案.首先利用紫外线光刻技术在多孔阳极氧化铝模板(AAO)生成预设图案,以此作为"二次模板";再利用电化学方法将铜纳米线沉积到"二次模板"的开孔中.扫描电镜(SEM)测试结果表明,大面积、高规整的铜纳米线图案阵列各自独立地立在基底上, 同时,用电子能谱(EDS)分析了铜纳米线的化学成分.透射电镜(TEM)也探测到了铜纳米线的微结构.