A fast beam switch for controlling the intensity in electron energy loss spectrometry

The fast deflection system described in this paper is suitable for controlling the intensity reaching the detector of a magnetic sector electron spectrometer mounted below an analytical transmission electron microscope. Amongst other things, this allows the low loss region of the spectrum to be recorded with the same electron probe conditions used to record core losses, something that is essential for high spatial resolution studies. The plate assembly restricts the width of the electron distribution reaching the viewing screen to a strip approximately 17 mm wide in the direction approximately normal to the dispersion direction of the spectrometer. The resulting deflection has no detectable effect on the FWHM of the zero-loss peak for exposure times as short as 1 micros. At incident energies up to 300 keV, positioning the deflection plates in the 35 mm camera port above the viewing chamber allows voltages of < +/- 3 kV to deflect the electrons out of the spectrometer and beyond the edge of the annular detector. When the deflection is switched on, the electrons are deflected out of the spectrometer in < 40 ns and when the deflection is switched off, the electrons return to within 10 microm of the undeflected position within 100 ns. Thus, even at an exposure time of 30 micros, the smallest time likely to be used in practice with a GATAN 666 spectrometer, < 1% of the signal in the spectrum is from electrons whose scattering conditions differ from those in the undeflected position. The performance of the deflection system is such that it will also be suitable for use with the new and much faster GATAN ENFINA spectrometer system. At incident energies up to 200 keV and possibly up to 300 keV, deflection voltages of +/- 3 kV are sufficient to deflect the electrons off a 1 k x 1 k charge coupled device (CCD) camera placed below the photographic camera. Thus the deflection system can be used as a very fast, non-mechanical shutter for such a CCD camera.     

COBRA-STAR, a five frame point-projection x-ray imaging system for 1 MA scale wire-array Z pinches

A new imaging system for 1 MA scale wire-array Z-pinch experiments that produces up to five high-resolution x-ray images per experimental pulse has been developed. Calibrated areal density measurements of the Z-pinch plasma can be obtained from each pulse. The system substitutes five molybdenum (Mo) X pinches for the normal copper return-current conductors to provide point sources of x-rays for point-projection radiography. Each backlighting X pinch consists of four Mo wires, the x-ray burst timing of which was controlled by varying the wire diameter (mass) from 10.2 to 30 microm in the five X pinches. Typical images have a 16x8 mm2 field of view at the wire array and a magnification of about 6.5:1 on the x-ray-sensitive film. Titanium (Ti) filters in front of the films transmit continuum radiation in the spectral range of 3-5 keV. Inclusion on the Ti of a step wedge having known thickness increments of the same material as the wires enables the calibrated areal density measurements to be made of the exploding wire plasmas. Here, we used tungsten (W) step wedges with step thicknesses ranging from 0.015 to 1.1 microm to obtain accurate (+/-10%) areal density measurements of W plasmas from the spatial profile of film exposure. When imaging arrays that produce intense radiation pulses, a plastic monofilament "quencher" is placed on axis to avoid film saturation. Images have subnanosecond temporal resolution and about 7 microm spatial resolution.     

Active pixel sensor array as a detector for electron microscopy

A new high-resolution recording device for transmission electron microscopy (TEM) is urgently needed. Neither film nor CCD cameras are systems that allow for efficient 3-D high-resolution particle reconstruction. We tested an active pixel sensor (APS) array as a replacement device at 200, 300, and 400 keV using a JEOL JEM-2000 FX II and a JEM-4000 EX electron microscope. For this experiment, we used an APS prototype with an area of 64 x 64 pixels of 20 microm x 20 microm pixel pitch. Single-electron events were measured by using very low beam intensity. The histogram of the incident electron energy deposited in the sensor shows a Landau distribution at low energies, as well as unexpected events at higher absorbed energies. After careful study, we concluded that backscattering in the silicon substrate and re-entering the sensitive epitaxial layer a second time with much lower speed caused the unexpected events. Exhaustive simulation experiments confirmed the existence of these back-scattered electrons. For the APS to be usable, the back-scattered electron events must be eliminated, perhaps by thinning the substrate to less than 30 microm. By using experimental data taken with an APS chip with a standard silicon substrate (300 microm) and adjusting the results to take into account the effect of a thinned silicon substrate (30 microm), we found an estimate of the signal-to-noise ratio for a back-thinned detector in the energy range of 200-400 keV was about 10:1 and an estimate for the spatial resolution was about 10 microm.     

Detection of high frequency intensity oscillations at RESEDA using the CASCADE detector

We have explored the technological potential of combining neutron resonance spin echo (NRSE) with the time-of-flight method in quasielastic neutron scattering (QENS) experiments. For these test measurements at the new NRSE instrument RESEDA (FRM II, Munich), we have employed CASCADE, one of the fastest neutron detectors in the world, developed at the University of Heidelberg. Conventionally, scintillation detectors are used, in order to detect neutron intensities with high time resolution. In contrast, we used the new CASCADE detector converting neutrons in thin (10)B layers being capable of resolving neutron intensity modulations up to the megahertz regime. This fast detector allows us to abandon the last resonance flip coil of a standard NRSE setup. The classical spin echo signal is replaced by a time-modulated signal. In this setup, fast intensity modulations are present at the detector position. In order to demonstrate, that NRSE-CASCADE operates well up to detector frequencies of 10 MHz, we performed elastic polarization test measurements on a standard sample. The CASCADE detector is a multidetector accumulating counts in 128 × 128 pixels on a surface of 200 mm × 200 mm. We have analyzed the signal in 600 pixels, providing information about the spin phase reaching the detector and about the resolution function of this new variant tested at RESEDA.     

Electron imaging with Medipix2 hybrid pixel detector

The electron imaging performance of Medipix2 is described. Medipix2 is a hybrid pixel detector composed of two layers. It has a sensor layer and a layer of readout electronics, in which each 55 microm x 55 microm pixel has upper and lower energy discrimination and MHz rate counting. The sensor layer consists of a 300 microm slab of pixellated monolithic silicon and this is bonded to the readout chip. Experimental measurement of the detective quantum efficiency, DQE(0) at 120 keV shows that it can reach approximately 85% independent of electron exposure, since the detector has zero noise, and the DQE(Nyquist) can reach approximately 35% of that expected for a perfect detector (4/pi(2)). Experimental measurement of the modulation transfer function (MTF) at Nyquist resolution for 120 keV electrons using a 60 keV lower energy threshold, yields a value that is 50% of that expected for a perfect detector (2/pi). Finally, Monte Carlo simulations of electron tracks and energy deposited in adjacent pixels have been performed and used to calculate expected values for the MTF and DQE as a function of the threshold energy. The good agreement between theory and experiment allows suggestions for further improvements to be made with confidence. The present detector is already very useful for experiments that require a high DQE at very low doses.     

Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation

In this work, Co ions were implanted into thermally oxidised SiO2 layers on silicon substrates. The implantation energy was 50 keV and the doses were 1, 3, 5 and 7 x 10(16) Co+/cm2. The field emission (FE) properties of these layers were studied and correlated with results from atomic force microscopy and transmission electron microscopy measurements. Other than that for the lowest dose sample, crystallised Co nanoclusters, with sizes ranging from 1.8 to 5.7 nm, are observed in these Co-implanted layers. The higher dose samples exhibit excellent FE properties and give an emission current of 1 nA at electric fields as low as 5 V/microm, for a dose of 5 x 10(16) Co+/cm2, compared with 120 V/microm for the lowest dose samples. We attribute the excellent FE properties of these layers to the formation of Co nanoclusters, with the electrical inhomogeneity giving rise to local field enhancement. Finally, repeatable staircase-like current-field (I-F) characteristics are observed in FE measurements of these higher dose samples as compared to conventional Fowler-Nordheim-type I-F characteristics in the lower dose sample. We believe this data may be a result of Coulomb blockade effects arising from the isolated low-capacitance metal quantum dots formed by controlled ion implantation.     

Direct electron imaging in electron microscopy with monolithic active pixel sensors

A new imaging device for dynamic electron microscopy is in great demand. The detector should provide the experimenter with images having sufficient spatial resolution at high speed. Immunity to radiation damage, accumulated during exposures, is critical. Photographic film, a traditional medium, is not adequate for studies that require large volumes of data or rapid recording and charge coupled device (CCD) cameras have limited resolution, due to phosphor screen coupling. CCD chips are not suitable for direct recording due to their extreme sensitivity to radiation damage. This paper discusses characterization of monolithic active pixel sensors (MAPS) in a scanning electron microscope (SEM) as well as in a transmission electron microscope (TEM). The tested devices were two versions of the MIMOSA V (MV) chip. This 1M pixel device features pixel size of 17 x 17 microm(2) and was designed in a 0.6 microm CMOS process. The active layer for detection is a thin (less than 20 microm) epitaxial layer, limiting the broadening of the electron beam. The first version of the detector was a standard imager with electronics, passivation and interconnection layers on top of the active region; the second one was bottom-thinned, reaching the epitaxial layer from the bottom. The electron energies used range from a few keV to 30 keV for SEM and from 40 to 400 keV for TEM. Deterioration of the image resolution due to backscattering was quantified for different energies and both detector versions.     

A combined real time wide energy range neutron dosimeter and survey meter for high neutron dose rates with Si surface barrier detectors

The development of a flat response small size, real time neutron dosimeter and ratemeter for the energy range of about 1 eV to 14 MeV is presented. This dosimeter is adequate for measuring neutron dose equivalent of 3 mRem up to 100 Rem and dose rates of 300 mRem/h to 50 Rem/h or more. The dosimeter consists of four Si surface barrier detectors. ¹⁰B radiators are placed in front of three of the detectors and a polyethylene radiator is placed in front of the fourth one. The ¹⁰B pellets are used for dose equivalent measurements in the energy range 1 eV to ∼ 1 MeV. The polyethylene radiator, made in two parts having thicknesses of 10 and 100 mg/cm² in an area ratio of 8 to 1, flattens the response to ±40% in the energy range 1–14 MeV. The signal-to-background ratio for different Si surface barrier detectors and for ¹⁰B polyethylene radiators was investigated. This dosimeter can give a rough estimation of the neutron spectrum by separating the total dose equivalent into 1 eV to ∼ 30 keV, 30 keV to ∼ 1 MeV and 1–14 MeV components.     

A 9 keV electron-impact liquid-gallium-jet x-ray source

We demonstrate a high-brightness compact 9 keV electron-impact microfocus x-ray source based on a liquid-gallium-jet anode. A approximately 30 W, 50 kV electron gun is focused onto the approximately 20 ms, 30 mum diameter liquid-gallium-jet anode to produce an approximately 10 microm full width at half maximum x-ray spot. The peak spectral brightness is >2 x 10(10) photons(s mm(2) mrad(2)x0.1% BW). Calculation and experiments show potential for increasing this brightness by approximately three orders of magnitude, making the source suitable for laboratory-scale x-ray crystallography and hard x-ray microscopy.     

A new method for accurate efficiency calibration of X-ray detectors for X-ray energies below 5 keV

A new method for accurate efficiency calibration of X-ray detectors for X-ray energies below 5 keV is presented. It is shown that it is possible to use a standard surface barrier detector (SBD) as X-ray detector for X-ray energies E_x ≥ 1 keV if it is cooled to the temperature of liquid nitrogen. Also, it is shown that the physical parameters of a SBD can be separately measured with sufficient accuracy so that the efficiency can be determined with an error less than 1% for X-ray energies 1 ≤ E_x ≤ 5 keV.     

Energy resolution of silicon surface-barrier detectors for oxygen and sulphur ions

A group of 9 silicon surface-barrier detectors, 4 manufactured by ORTEC and 5 fabricated by the first author and his students. has been tested for their energy resolutions with oxygen ions of 36.750 and 50 MeV energy and sulphur ions of 51.086 MeV energy from the University of Pittsburgh Van de Graaff accelerator. Six of the detectors had previously been tested with oxygen ions of 25 and 50 MeV energy at Pittsburgh, and those results are compared with the present ones. It is now possible to conclude that the energy resolution of the best detectors is independent of oxygen ion energy between 36.750 and 50 MeV and is about 100 keV (fwhm). When tested with sulphur ions, 4 of the detectors showed anomalous effects, including peaks and smudges both below and above the main peak. Some of these could be eliminated by varying the reverse bias voltage across the detector, others could not. In particular, the ORTEC detector 40, used in the previous work as the standard detector presently available, did not show a single peak at any bias. It is an excellent detector for oxygen ions, but is not useful for sulphur ions. The energy resolution of the best detectors for 51.086 MeV sulphur ions is under 300 keV (fwhm).     

Detective quantum efficiency of electron area detectors in electron microscopy

Recent progress in detector design has created the need for a careful side-by-side comparison of the modulation transfer function (MTF) and resolution-dependent detective quantum efficiency (DQE) of existing electron detectors with those of detectors based on new technology. We present MTF and DQE measurements for four types of detector: Kodak SO-163 film, TVIPS 224 charge coupled device (CCD) detector, the Medipix2 hybrid pixel detector, and an experimental direct electron monolithic active pixel sensor (MAPS) detector. Film and CCD performance was measured at 120 and 300 keV, while results are presented for the Medipix2 at 120 keV and for the MAPS detector at 300 keV. In the case of film, the effects of electron backscattering from both the holder and the plastic support have been investigated. We also show that part of the response of the emulsion in film comes from light generated in the plastic support. Computer simulations of film and the MAPS detector have been carried out and show good agreement with experiment. The agreement enables us to conclude that the DQE of a backthinned direct electron MAPS detector is likely to be equal to, or better than, that of film at 300 keV.     

High resolution gamma ray tomography scanner for flow measurement and non-destructive testing applications

We report on the development of a high resolution gamma ray tomography scanner that is operated with a Cs-137 isotopic source at 662 keV gamma photon energy and achieves a spatial image resolution of 0.2 line pairs/ mm at 10% modulation transfer function for noncollimated detectors. It is primarily intended for the scientific study of flow regimes and phase fraction distributions in fuel element assemblies, chemical reactors, pipelines, and hydrodynamic machines. Furthermore, it is applicable to nondestructive testing of larger radiologically dense objects. The radiation detector is based on advanced avalanche photodiode technology in conjunction with lutetium yttrium orthosilicate scintillation crystals. The detector arc comprises 320 single detector elements which are operated in pulse counting mode. For measurements at fixed vessels or plant components, we built a computed tomography scanner gantry that comprises rotational and translational stages, power supply via slip rings, and data communication to the measurement personal computer via wireless local area network.     

Multiport-readout frame-transfer 5 megapixel CCD imaging system for TEM applications

A multiport-readout, frame-transfer charge-coupled device (CCD) digital imaging system has been successfully developed and tested for intermediate-high-voltage electron microscopy (IVEM) applications up to 400 keV. The system employs a back-thinned CCD with 2560 x 1960 pixels and a pixel size of 24 microm x 24 microm. In the current implementation, four of the eight on-chip readout ports are used in parallel each operating at a pixel rate of 1- or 2-MHz so that the entire CCD array can be read out in as short as 0.6 s. The frame-transfer readout functions as an electronic shutter which permits the rapid transfer of charges in the active pixels to four masked buffers where the charges are readout and digitized while the active area of the CCD is integrating the next frame. With a thin film-based phosphor screen and a high-performance lens relay, the system has a conversion factor of 2.1 digital units per incident electron at 400 keV, and a modulation transfer function value of 14% at the Nyquist frequency.     

An upgraded x-ray spectroscopy diagnostic on MST

An upgraded x-ray spectroscopy diagnostic is used to measure the distribution of fast electrons in MST and to determine Z(eff) and the particle diffusion coefficient D(r). A radial array of 12 CdZnTe hard-x-ray detectors measures 10-150 keV Bremsstrahlung from fast electrons, a signature of reduced stochasticity and improved confinement in the plasma. A new Si soft-x-ray detector measures 2-10 keV Bremsstrahlung from thermal and fast electrons. The shaped output pulses from both detector types are digitized and the resulting waveforms are fit with Gaussians to resolve pileup and provide good time and energy resolution. Lead apertures prevent detector saturation and provide a well-known etendue, while lead shielding prevents pickup from stray x-rays. New Be vacuum windows transmit >2?keV x-rays, and additional Al and Be filters are sometimes used to reduce low energy flux for better resolution at higher energies. Measured spectra are compared to those predicted by the Fokker-Planck code CQL3D to deduce Z(eff) and D(r).     

Measuring the Spectral Composition of X-ray Pulses from a Plasma Using a Compact Spectrometer Based on Thermoluminescent Detector Arrays

A single-channel compact (ø5 × 10 mm) noise-immune spectrometer has been developed for measuring X-ray spectra of micropinch-discharge plasma in the energy range of 1?25 keV using the filter method. The spectrometer is based on an array of lithium fluoride LiF thermoluminescent detectors placed in series, which are also used as filters for X-ray spectrum selection.     

High-energy x-ray microbeam with total-reflection mirror optics

Total-reflection mirror optics for high-energy x-ray microfocusing have been developed, and tested in the energy range of 30-100 keV at beamline 20XU of Synchrotron Radiation Facility SPring-8. The optical system consists of a Kirkpatrick-Baez-type [J. Opt. Soc. Am. 38, 766 (1548)] focusing optics with aspherical total-reflection mirrors for the purpose of reducing the spherical aberrations. A focused beam size of 0.35 x 0.4 microm(2) has been achieved at an x-ray energy of 80 keV, and the measured spot size was less than 1 microm in the x-ray energy region below 90 keV.     

A photoelectron-photoion coincidence imaging apparatus for femtosecond time-resolved molecular dynamics with electron time-of-flight resolution of sigma=18 ps and energy resolution Delta E/E=3.5%

We report on the construction and performance of a novel photoelectron-photoion coincidence machine in our laboratory in Amsterdam to measure the full three-dimensional momentum distribution of correlated electrons and ions in femtosecond time-resolved molecular beam experiments. We implemented sets of open electron and ion lenses to time stretch and velocity map the charged particles. Time switched voltages are operated on the particle lenses to enable optimal electric field strengths for velocity map focusing conditions of electrons and ions separately. The position and time sensitive detectors employ microchannel plates (MCPs) in front of delay line detectors. A special effort was made to obtain the time-of-flight (TOF) of the electrons at high temporal resolution using small pore (5 microm) MCPs and implementing fast timing electronics. We measured the TOF distribution of the electrons under our typical coincidence field strengths with a temporal resolution down to sigma=18 ps. We observed that our electron coincidence detector has a timing resolution better than sigma=16 ps, which is mainly determined by the residual transit time spread of the MCPs. The typical electron energy resolution appears to be nearly laser bandwidth limited with a relative resolution of DeltaE(FWHM)/E=3.5% for electrons with kinetic energy near 2 eV. The mass resolution of the ion detector for ions measured in coincidence with electrons is about Deltam(FWHM)/m=14150. The velocity map focusing of our extended source volume of particles, due to the overlap of the molecular beam with the laser beams, results in a parent ion spot on our detector focused down to sigma=115 microm.     

X-ray imaging with grazing-incidence microscopes developed for the LIL program

This article describes x-ray imaging with grazing-incidence microscopes, developed for the experimental program carried out on the Ligne d'Integration Laser (LIL) facility [J. P. Le Breton et al., Inertial Fusion Sciences and Applications 2001 (Elsevier, Paris, 2002), pp. 856-862] (24 kJ, UV-0.35 nm). The design includes a large target-to-microscope (400-700 mm) distance required by the x-ray ablation issues anticipated on the Laser MégaJoule facility [P. A. Holstein et al., Laser Part. Beams 17, 403 (1999)] (1.8 MJ) which is under construction. Two eight-image Kirkpatrick-Baez microscopes [P. Kirkpatrick and A. V. Baez J. Opt. Soc. Am. 38, 766 (1948)] with different spectral wavelength ranges and with a 400 mm source-to-mirror distance image the target on a custom-built framing camera (time resolution of approximately 80 ps). The soft x-ray version microscope is sensitive below 1 keV and its spatial resolution is better than 30 microm over a 2-mm-diam region. The hard x-ray version microscope has a 10 microm resolution over an 800-microm-diam region and is sensitive in the 1-5 keV energy range. Two other x-ray microscopes based on an association of toroidal/spherical surfaces (T/S microscopes) produce an image on a streak camera with a spatial resolution better than 30 microm over a 3 mm field of view in the direction of the camera slit. Both microscopes have been designed to have, respectively, a maximum sensitivity in the 0.1-1 and 1-5 keV energy range. We present the original design of these four microscopes and their test on a dc x-ray tube in the laboratory. The diagnostics were successfully used on LIL first experiments early in 2005. Results of soft x-ray imaging of a radiative jet during conical shaped laser interaction are shown.