Air trench bends and splitters for dense optical integration in low index contrast

Low-loss air trench structures that permit reduced-size bends in low (/spl Delta/ = 0.7-7%) and medium (/spl Delta/ = 7-20%) index contrast waveguides are demonstrated. Local high index contrast at bends is achieved by introducing air trenches with "cladding tapers" that provide an adiabatic mode transition between low and high index contrast regions. We have fabricated and measured the performance of bends and T-splitters in silica low index contrast waveguides. Complimentary metal-oxide-semiconductor (CMOS) compatible processes are effective in processing, and measured losses are low and consistent with theoretical simulations.     

Design and Analysis of Refractometer Based on Bend Waveguide Structure with Air Trench for Optical Sensor Applications

This study proposes a novel optical sensor structure based on a refractometer combining a bend waveguide with an air trench. The optical sensor is a splitter structure with a reference channel and a sensing channel. The reference channel has a straight waveguide. The sensing channel consists of a U‐bend waveguide connecting four C‐bends, and a trench structure to partially expose the core layer. The U‐bend waveguide consists of one C‐bend with the maximum optical loss and three C‐bends with minimum losses. A trench provides a quantitative measurement environment and is aligned with the sidewall of the C‐bend having the maximum loss. The intensity of the output power depends on the change in the refractive index of the measured material. The insertion loss of the proposed optical sensor changes from 3.7 dB to 59.1 dB when the refractive index changes from 1.3852 to 1.4452.     

Study and design of step-index channel waveguide bends withlarge-angle and low-loss characteristics

By using micro-prisms, improved three-dimensional (3-D) bends of the embedded and buried waveguides of step-index profile are proposed. A simple phase compensation rule for the optimal design of the micro-prism is also presented. Through the simulation of 3-D semivectorial finite-difference beam propagation method, the transmission characteristics of the improved bends are shown to have been enhanced dramatically as compared with those of the conventional ones. Even for a bend angle of as large as 10°, the normalized transmitted power can still be greater than 95%. These results of 3-D bends are then compared with those of the two-dimensional (2-D) ones which are simplified from 3-D structures by the effective index method, and physical explanation of the discrepancy between the 3-D and 2-D results is introduced. The influences of waveguide structures and prism parameters on the transmission characteristics are discussed in detail. Some criteria for the design of large-angle low-loss 3-D improved bends are also accessed     

Design and modeling of waveguide-coupled single-mode microringresonators

We discuss a first-order design tool for waveguide-coupled microring resonators based on an approximate solution of the wave propagation in a microring waveguide with micron-size radius of curvature and a large lateral index contrast. The model makes use of the conformal transformation method and a linear approximation of the refractive index profile, and takes into account the effect of waveguide thickness, dispersion, and diffraction. Based on this model, we develop general design rules for the major physical characteristics of a waveguide-coupled microring resonator, including the resonance wavelength, the free spectral range, the coupling ratio, the bending radiation loss and the substrate leakage loss. In addition, the physical model provides leads to alternative coupling designs. We present two examples, one using a phase-matching parallel waveguide with a smaller width than the ring waveguide, and the other using a vertical coupling structure. Both these designs significantly increase the coupling length and reduce or eliminate the dependence on a narrow air gap in a waveguide coupled microring resonator     

Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy

We present an investigation of local mechanical stress in shallow trench isolation by UV micro-Raman spectroscopy. UV light (364 nm) penetrates only 15 nm into silicon. In contrast to conventional micro-Raman spectroscopy using visible light only the stress very close to the surface is monitored. In this way, local areas of high stress can be detected, that are not seen with longer wavelength light due to averaging. We demonstrate the advantages of the UV method by an investigation of the influence of different trench oxide densification ambients on the amount of mechanical stress in the silicon substrate. We find, that large mechanical stress up to 800 MPa is introduced at the active area edges during densification in steam ambient. This stress is caused by the formation and growth of a bird’s beak, which may lead to defect creation especially in small trenches. This investigation demonstrates the capability to use UV micro-Raman spectroscopy in ULSI technology.     

Numerical optimization procedure for low-loss sharp bends in MgOCo-doped Ti:LiNbO3 waveguides

Recent results provided experimental evidence that losses in bent Ti:LiNbO₃ waveguides can be drastically reduced by using additional titanium and magnesium oxide. We determine an optimization procedure for the index profile in curved sections. The beam propagation method indicates that in optimized bends, losses are orders of magnitude below those of conventional bends. Tolerances in mask alignment and in deposited film thickness are estimated to be well compatible with present technology     

The optimization of deep trench isolation structure for high voltage devices on SOI substrate

In this paper, the process and layout optimizations for improving the isolation performance of deep trench structures on SOI substrate are proposed. In the view of process flow, the reasons for forming weak points (located at the trench bottom) in deep trench structure are analyzed. In order to solve this problem of the weak points, a method of etching partial buried oxide after etching silicon is put forward, which can increase the thickness of isolation oxide at trench bottom by 10-20%. In aspect of layout structure, a voltage drop model of double trench structures is presented and verified by the experimental results, which indicates that breakdown voltage of double trench is a function of trench spacing. It is noted that the minimum trench spacing allowed by the process design rule can ensure superior isolation capability for double trench structure. Both methods for improving the performance of the device have also been verified in 0.5 μm HV SOI technology.     

超低损耗孔助光纤弯曲性能优化设计

建立了弯曲光纤的二维轴对称有限元分析模型,对初始光纤弯曲性能进行了有限元分析,分别计算其弯曲损耗,有效模场面积和连接损耗;选取芯层到下陷层距离b,下陷层宽度c,下陷层深度t,空气孔孔径r为设计变量,以弯曲损耗和连接损耗最小为目标,利用正交试验和灰度关联分析相结合的方法对光纤弯曲性能进行了多因素多目标优化设计。研究结果表明:优化后光纤弯曲损耗从0.127 8 dB/m减小到1.749 810-4 dB/m;有效模场面积从94.741 m2减小到82.37 m2;连接损耗由0.174 3 dB减小到5.80510-4 dB。与标准单模光纤对比发现,新型光纤在弯曲半径为3 mm的情况下,有效模场面积从209.21 m2减小到82.3 m2,连接损耗从7.535 8 dB减小到5.80510-4 dB,大大地降低了光纤的连接损耗。新型光纤在小半径弯曲情况下,也能保证系统的传输质量。     

A Minimized SiO2 Waveguide With an Antiresonant Reflecting Structure for Large-Scale Optical Integrations

A minimized SiO₂ waveguide with an antiresonant reflecting buffer, a SiO₂ core, and an air cladding is presented. The buffer includes multiple periods of antiresonant reflecting structure to lower leakage loss to the substrate. Theoretically speaking, when there are three periods of etch-through antiresonant reflecting structures, one obtains a straight minimized SiO ₂ waveguide with a low leakage loss (<0.01 dB/cm) and a bending radius as small as 15 mum (because of the large index contrast between the core (SiO₂) and the air cladding in the lateral direction)     

Effects of substrate resistance on CMOS latchup holding voltages

We suggest a method to estimate the effects of substrate resistances on the latchup holding voltage of CMOS integrated circuits. The estimated holding voltages are shown to be in reasonable agreement with the experimental data inspite of two bold approximations. Using this method, we analyze the effect of several variables relating to the epitaxial substrate and/or the well-isolation trench on the latchup holding voltage. It is shown that there may exist a certain optimum epitaxial layer thickness that leads to a maximum latchup holding voltage and that even a shallow trench is remarkably effective in raising the holding voltage. Physical explanations are offered for the effects of the epitaxial layer and trench on the holding voltage. Examples are presented to illustrate the general effects of several design variables and to aid the design and interpretation of process experiments.     

Air-Gap Transmission Lines on Organic Substrates for Low-Loss Interconnects

The fabrication of low-loss transmission line structures with an air dielectric layer is described. The channels are characterized at low frequency (10 and 100 kHz) using capacitance and loss tangent and at high frequency (500 MHz to 10 GHz) using -parameter measurements. The incorporation of an air gap resulted in structures with effective dielectric constants between 1.5-1.8 and significantly lower loss tangents. The fabrication technique could be used to create more complicated air gap transmission line structures for use in monolithic microwave integrated circuits.     

不同切型质子交换弯曲波导的弯曲损耗研究

退火质子交换铌酸锂光波导是一类重要的光波导。对2种不同切型的3种常用S形弯曲质子交换光波导,利用宽角有限差分光束传播法进行了分析。结果表明,3种弯曲波导的弯曲损耗,随波导结构参数的变化基本上是相同的,而在相同的波导结构参数下,X切型的质子交换光波导的弯曲损耗总体上都要小于Z切型的质子交换光波导。数值计算结果为相应波导器件的设计和制备提供了一定的参考。     

Etched-wall bent-guide structure for integrated optics in the III-V semiconductors

Bent-guide structures will undoubtedly play an important role in increasing packing density in future integrated optical circuits. A method for forming bends in waveguides in III-V semiconductors by reflection off an etched vertical wall is proposed for providing wave-guiding through 90° with negligible loss.     

Performance Optimization of a Reconfigurable Waveguide Digital Optical Switch on InGaAsP–InP: Design, Material, and Carrier Dynamics

The design and performance of an InGaAsP-InP 1 times 2 reconfigurable waveguide digital optical switch (RW-DOS) actuated by carrier-induced refractive index modulation is described. Using a device model based on the two-dimensional beam propagation method, we present an analysis of the role of material bandgap, carrier lifetime, and waveguide design on the switch performance. The model results are compared with experimental measurements of carrier-induced index change and switching performance for RW-DOS devices and test structures fabricated in InGaAsP alloys with waveguide core compositions of Q = 1.2, Q = 1.3, and Q = 1.4 mum. We discuss compromises between power consumption, switching speed, and propagation loss. The optimized InGaAsP-InP devices exhibited better than 25-dB switching contrast ratio and require less than 20-mA drive current.     

Leakage loss in trench-bulge waveguides

This paper shows that leakage loss is an important loss mechanism in integrated optical trench-bulge waveguides. The propagation losses due to leakage can easily exceed 1 dB/cm in these waveguide geometries. By simply using a deeper trench or a cavity in the substrate to deposit the waveguide in, the leakage losses can be reduced dramatically.     

Periodic bandgap and effective dielectric materials in electromagnetics: characterization and applications in nanocavities and waveguides

The main objectives of this paper are to characterize and develop insight into the performance of photonic bandgap (PBG) periodic dielectric materials and to integrate the results into some novel applications. A powerful computational engine utilizing the finite-difference time-domain technique with periodic boundary conditions/perfectly matched layers integrated with Prony's method is applied to provide an in-depth look at the physics of PBG/periodic bandgap structures. Next, the results are incorporated into two classes of applications in the areas of nanocavity lasers and guidance of electromagnetic (EM) waves in sharp bends. A two-dimensional PBG structure with finite thickness is presented to strongly localize the EM waves in three directions and design a high-Q nanocavity laser. It is shown that the periodic PBG/total internal reflections remarkably trap the EM waves inside the defect region. The effect of the number of periodic cells and defect's dielectric constant on the Q of structure is investigated. It has been found that a seven-layer PBG with a dielectric impurity defect can be used in the design of a laser with a Q as high as 1050. Additionally, potential applications of the PBG structures for guiding the EM waves in sharp bends, namely, 90/spl deg/ and 60/spl deg/ channels are demonstrated. It is shown that shaping the bend by introducing small holes can noticeably improve the guidance of the waves at the bends and channel the EM waves with great efficiency. A comparative study between PBG and effective dielectric materials in controlling the EM waves is also provided and it is observed that the novel characteristics of the PBG cannot be modeled using the effective material for the frequencies within the bandgap.     

Full-wave analysis of coplanar waveguides for LiNbO3optical modulators by the mode-matching method considering nonidealconductors on etched buffer layers

Rigorous analysis of traveling-wave coplanar waveguide electrodes for LiNbO₃ optical modulator applications is presented by using an extended full-wave mode-matching method. The microwave propagation characteristics under the composite influence of substrate anisotropy, uniform or etched buffer layers, finite electrode thickness and conductivity, and metallization undercutting are accurately assessed by employing a network equivalent formulation. Variations of the coplanar waveguide microwave effective index and the characteristic impedance at low frequencies due to finite electrode conductivity are illustrated, and are important even though the mode is quasi-TEM in nature. The effect of etching the SiO₂ buffer layer is shown to be one possible method for lowering the microwave effective index while keeping the conductor loss at a fixed level     

The effect of trench corner shapes on local stress fields: athree-dimensional finite-element modeling study

Local stress fields associated with deep trench structures are modeled in three dimensions utilizing a finite-element method. A model consisting of a SiO₂-filled deep trench residing in a silicon substrate is utilized, and stress is generated by differential thermal contraction. It is shown that corner regions, especially convex, `outside' corners, dramatically enhance the elastic energy density and shear stresses locally compared to noncorner regions. The effects of the specific corner geometry on these local stress fields is then investigated and it is shown that subtle geometric changes can yield substantial decreases in the magnitude and lateral extent of the fields     

Conformal electroless deposition of Cu seed layer on a 60-nm trench pattern modified with a self-assembled monolayer

We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu on a SiO₂ substrate modified with an organic self-assembled monolayer. The SiO₂ substrate was modified with amine groups using 3-aminopropyltriethoxysilane and Au nanoparticles (AuNPs) to form a uniform, continuous catalyst for ELD. The Au catalytic layer formed on the amine-SiO₂ substrate was stabilized by electrostatic interactions between the positively charged protonated-amine self-assembled monolayer (SAM) and negatively charged AuNPs. Cu films were then electrolessly deposited on Au-catalyzed SiO₂ substrates. The Cu seed layer formed by this method showed a highly conformal and continuous structure. Cu electrodeposition on the 60-nm trench was demonstrated using an acid cupric sulfate electrolyte containing chloride, polyethylene glycol 4000 and bis(3-sulfopropyl)disulfide. The resulting electroplated Cu showed excellent filling capability and no voids or other defects were observed in a 60-nm trench pattern.     

Design of optical circuit devices based on topology optimization

We apply a design method based on topology optimization technique to optical waveguide devices. In our approach, after a refractive index profile in a design region is automatically generated using a topology optimization method, the obtained structure is redefined using primitive geometries with some design parameters and those parameters are optimized by a sequential linear programming. As numerical examples, we demonstrate how the method can be used for 90/spl deg/ bends and T-branching waveguides with arbitrary splitting ratio.