C60半导体光电器件

讨论了两类Ｃ６０薄膜作为畔导体材料制备的光电器件：Ｃ６０电致发光二级管和半导体聚合物／Ｃ６０导质结二极管、分析了器件的工作原理、指出了Ｃ６０作为半导体光电材料潜在的应用领域。     

傅里叶变换红外拉曼光谱检测半导体薄膜下衬底特性

高质量半导体薄膜是制备高性能光电器件的基础,其光电子性质很大程度受衬底所制约,实验检测薄膜下衬底性质,有助于薄膜生长优化.然而,表面薄膜覆盖后的衬底特性检测通常受到严重制约.报道一种傅里叶变换拉曼光谱方法,利用低光子能量红外激发光的深穿透特性,降低薄膜影响,有效获取薄膜下半导体衬底的拉曼散射信息.GaAs上外延CdTe...     

发光器件

阻挡层结构的蓝色有机发光二极管[中]/朱文清… //半导体光电.-2001,22(1).-45-472001100339陶瓷厚膜和薄膜混合电致发光器件[中]/朱文清…//半导体光电.-2001,22(2).-82-862001100340     

Ⅲ-Ⅴ族半导体材料的低温光致发光

<正> 砷化镓、磷化铟等Ⅲ-Ⅴ族化合物半导体已广泛应用于微波、光电等器件中.为了提高材料质量,我们建立了灵敏、非破坏性的检测手段——低温光致发光.它还适合于微区和薄膜的研究,是分析GaAs等Ⅲ-Ⅴ族半导体材料中杂质和缺陷的有效方法之一.本文将介绍低温光致发光的实验技术和部份实验结果.     

采用离子束蒸发的GaAs薄膜外延生长

<正> 一、前言化合物半导体GaAs与元素半导体硅相比,有如下不同点,如电子迁移率高和电子在导带-价带之间跃迁时其电子动量不变等,因此被广泛用作硅所不能实现的高速器件材料和光电器件材料。一般来说,GaAs器件都是制作在GaAs薄膜表面层上,而这层薄膜是在水平布尔兹曼法或直拉法制作的GaAs衬底上外延生长的。这种GaAs薄膜过去大都采用LPE法或VPE法生长,     

本期主题索引

半导体 一光电特性半导体薄膜 一氮化合物 一二氧化硅半导体材料 一能带 一缺陷 一热特性 一特征分析半导体掺杂 一镁半导体二极管 一研究半导体激光器 一国际会议 一性能半导体技术 一国际会议半导体开关 一电路 一砷化稼半导体器件 一辐射影响 一结构 一绝缘体上硅 一可靠性 一模拟技术 一筛选 一失效物理 一诊断(物理)半导体物理学半导体整流器 一影响办公室自动化包装设备 一计量薄膜 一磁控管溅射 一电致发光薄膜电感器 一结构薄膜工艺17174薄膜器件16975保护电路17757 一安全性试验保密 一动态特性保密编码17596 一可靠性分析 一理论 …     

P型ZnO薄膜制备和掺杂的研究进展

ZnO作为第三代半导体功能材料,一直受到国内外的广泛关注.高质量的p型掺杂是基于光电器件应用的关键.综述了获得p型ZnO薄膜的制备方法和掺杂技术的研究进展,讨论了目前生长高质量的p型ZnO薄膜存在的困难,并对不同方法制备的p型ZnO薄膜的特点进行了比较分析.     

半导体光电器件工艺技术概述

半导体光电器件主要包括半导体激光器，半导体发光管，半导体探测器以及半导体光放大器等基于半导体材料的光电器件，它们体积小，可靠性高，便于集成，光电，电光转换效率高，在光通信系统中完成发射，接收，放大和监控等功能，是通信系统重要的组成部分。     

光电薄膜技术的新动向

在当今光电技术日新月异发展的形势下,薄膜技术已渗透到光电子学的多种领域中。随着光纤通讯、光计算机、光信息存储与传输的迅猛发展与应用,各种新型光电薄膜器件与薄膜技术正在相辅相成地不断开拓中。光电薄膜器件的产品也以7.7％的年增长率发展着。市场对于光电薄膜器件产品的要求不仅是其光电物理特性,而且包括应用于整机系统中的可靠性、再现性和一致性。每一种光电薄膜器件的产品化都伴随着它的成套技术设备的定型。没有     

重庆光电技术研究所简介

重庆光电技术研究所简介重庆光电技术研究所是国内专门从事半导体光电器件及其应用技术研制和开发的研究所，１９６９年底始建于重庆市永川境内，１９９６年１０月搬迁至重庆市南坪。重庆光电技术研究所主要从事电荷耦合器件（ＣＣＤ）、红外焦平面器件、半导体光发射器件...     

AIN膜及其在半导体光电器件中的应用

本文报道溅射AlN膜及其应用于半导体光电器件的实验研究结果。测定了不同条件下溅射的AlN膜厚度、淀积速率、折射率和击穿电场强度。首次用AlN膜做器件的端面保护和减反射膜以及表面钝化膜均获得成功。几种常用介质膜的实验数据对比分析表明AlN膜在半导体光电器件领域将有广阔应用前景。     

Organic-on-organic semiconductor heterojunctions: building blockfor the next generation of optoelectronic devices

A novel class of optoelectronic devices utilizing thin films of stable crystalline organic semiconductors layered onto inorganic semiconductor substrates is described. The electrical properties of these devices are determined by the energy barrier at the heterojunction contact between the organic and inorganic materials, and in many ways are similar to those of ideal diffused-junction inorganic semiconductor devices. The organic materials can be layered onto semiconductor substrates without inducing large strains in either material, hence allowing a wide range of material combinations with a similarly broad range of optoelectronic functions to be realized. As examples, high-bandwidth photodetectors and field-effect transistors made using organic/inorganic semiconductor heterojunctions are discussed. Modification of the optical and electronic properties of the organic films by irradiation with energetic electron and ion beams is considered     

二维半导体光电性质与器件研究进展简述

二维半导体材料,如过渡金属硫族化合物,以其在光电器件方面展现出的独特性能与巨大潜力,成为后摩尔时代有极大发展前景的新半导体材料.二维材料具有独特的光电性质,如直接带隙的电子结构,谷自旋电子学特性,强激子效应等,而利用以上性质,此类材料可用于光探测器、场效应晶体管、高效微纳传感器、光电子电路等微纳光电器件中.因此,以过渡金属硫族化合物为代表的二维半导体材料无论在基础科学与未来应用方面,都是重要的备选材料.     

The Interlayer Method: A Universal Tool for Energy Level Alignment Tuning at Inorganic/Organic Semiconductor Heterojunctions

The combination of inorganic and organic semiconductors in a heterojunction is considered a promising approach to overcome limitations of each individual material class. However, to date only few examples of improved (opto-)electronic functionality have been realized with such hybrid heterojunctions. The key to unraveling the full potential offered by inorganic/organic semiconductor heterojunctions is the ability to deliberately control the interfacial electronic energy levels. Here, a universal approach to adjust the offset between the energy levels at inorganic/organic semiconductor interfaces is demonstrated: the interlayer method. A monolayer-thick interlayer comprising strong electron donor or acceptor molecules is inserted between the two semiconductors and alters the energy level alignment due to charge transfer with the inorganic semiconductor. The general applicability of this method by tuning the energy levels of hydrogenated silicon relative to those of vacuum-processed films of a molecular semiconductor as well as solution-processed films of a polymer semiconductor is exemplified, and is shown that the energy level offset can be changed by up to 1.8 eV. This approach can be used to adjust the energy levels at the junction of a desired material pair at will, and thus paves the way for novel functionalities of optoelectronic devices.     

Synthesis and characterisation of curcumin–M (M = B,Fe and Cu) films grown on p-Si substrate for dielectric applications

Metal-coordinated yellow curcumin was extracted from green natural sources and sublimated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The synthesised curcumin complexed with the metals boron, iron, and copper powders were crystalline while the prepared films were amorphous. The optical absorption spectrum of the prepared films showed similar two absorption band structure in the visible range. The onset energy of the main optical absorption band of the film was determined using the Tauc technique. The dielectric properties of this material were systematically studied for future applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed. The important find is a large optoelectronic sensitivity so that the integral optical responsivity (S¹) reaches ∼1.0 A/W and the electrical conductivity increases under light illumination by ∼400–1000%. Generally, Curcumin metal complex can be used in small-k environmentally friendly production of microelectronic and optoelectronic devices.     

Simultaneous in situ measurement of film thickness and temperatureby using multiple wavelengths pyrometric interferometry (MWPI)

Film thickness and temperature are two of the most important quantities in semiconductor manufacturing. They play a fundamental role in many standard production techniques like chemical vapor deposition (CVD, LPCVD, PECVD), thermal oxidation and diffusion. They are especially important for more recently developed technologies like molecular beam epitaxy (MBE), metal organic MBE (MOMBE), metal organic CVD (MOCVD), chemical beam epitaxy (CBE), etc. In this paper, an optical in situ method for simultaneous film thickness and temperature measurements-named multiple wavelengths pyrometric interferometry (MWPI)-is introduced, which is capable of high resolution (up to 0.1 nm for thickness and 0.025 K for temperature) and for real time data evaluation. It can be used for process control as well as in situ quality inspection without time delay or additional handling mechanisms and is suitable for monitoring single films as well as multilayer structures. MWPI is insensitive to vibration, rotation and misalignment of the wafer. Due to its optical basis it is also insensitive to hostile environments like high temperature and/or chemical reactive gases     

InSb半导体材料的抛光液研究

InSb薄膜被广泛应用于光电元件、磁阻元件、霍尔元件以及晶体管结构器件之中.研究了一种应用于的抛光液,在一定压力、温度、转速下,以有机碱替代无机碱,通过添加螯合剂、活性剂降低产品表面粗糙度,减少划伤,表面污染小.     

Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets

Titanium nitride (TiN) is an alternative plasmonic material that has the potential for visible and near‐infrared optical applications due to its distinct properties. Here, coupling effects between TiN nanohole array films and nearby excitonic emitters, semiconductor nanoplatelets (NPLs), are investigated using single particle spectroscopy. At the emission wavelength of the NPLs, the local field enhancement close to the surface of the TiN nanohole array films induces an increase in the radiative decay rates of the emitters by a factor of up to 2. This effect diminishes quickly as the distance between the TiN nanohole array films and emitters increases. At short wavelengths where the NPLs are excited, the TiN nanohole array films exhibit lossy dielectric characteristics. Local field modification at these wavelengths leads to a reduced local density of electromagnetic states, and hence the photoluminescence intensity of the emitters. This study shows the potential of TiN as an alternative plasmonic material for optoelectronic and photonic applications, especially in the long wavelength ranges.