Optimization of growth conditions of ZnO nano thin films by chemical double dip technique

Abstract

Zinc oxide (ZnO) nano thin films have been deposited by the chemical double-dip technique using aqueous ZnSO₄ and NaOH solutions. The ZnO films were characterized in terms of surface morphology by x-ray diffraction, energy-dispersive x-ray analysis (EDX), the use of a scanning electron microscope (SEM) and atomic force microscope (AFM) for surface morphology. The films exhibited a smooth morphology. The chemical states of oxygen and zinc in the ZnO nano thin films were also investigated by x-ray photoelectron spectroscopy (XPS). In the present investigations, highly textured ZnO thin films with a preferential (002)-orientation were prepared on glass substrates. The deposition conditions were optimized to obtain device-quality films for practical applications.     

Influence of calcination temperature on structural and optical properties of TiO2-SiO2 thin films prepared by sol-gel dip coating

We prepared TiO₂-SiO₂ thin films with various TiO₂/SiO₂ ratios by sol-gel dip coating method and explored the dependence of their structural and optical properties on calcination temperature. The absorption peaks relevant to Si—O, Si—O—Ti and Ti—O bonds appeared in the FTIR spectra. With increasing TiO₂ content, the intensity of Si—O bond peaks decreases and that of Ti—O bond peaks increases. The XRD results show that the temperature of transformation from amorphous to anatase phase is lowered as TiO₂ content increases. The crystallite size of anatase phase in composite thin films increases with increasing TiO₂ content and calcination temperature. At 1000°C, the mixed phase of anatase and rutile appears in the pure TiO₂ thin films. The rutile films are denser than the anatase films. The increase in refractive index of composite thin films with calcination temperature is related to the decreased thickness and increased density as a result of evaporation of water and organic matters below 400°C. On the other hand, it is related to the change in the crystal phase and crystallite size of the films over 400°C.     

Electrical and optical characteristics of SnO2 thin films prepared by dip coating from aqueous colloidal suspensions

Starting from aqueous colloidal suspensions, undoped and Nb⁵⁺ doped SnO₂ thin films have been prepared by using the dip-coating sol-gel process. X-ray diffraction results show that films are polycrystalline with crystallites of average size 1–4 nm. Decreasing the thickness of the films and increasing the Nb⁵⁺ concentration limits the crystallite size growth during firing. Complex impedance measurements reveal capacitive and resistive effects between adjacent crystallites or grains, characteristic of electrical potential barriers. The transfer of charge throughout these barriers determines the macroscopic electrical resistance of the layer. The analysis of the optical absorption spectra shows that the samples present more than 80% of their transmittance in the visible region and the value of the band gap energy increases with decreasing crystallite size. This revised version was published online in July 2006 with corrections to the Cover Date.     

Analysis of dip coating processing parameters by double optical monitoring

Double optical monitoring is applied to determine the influence of main process parameters on the formation of sulfated zirconia and self-assembled mesoporous silica solgel films by dip coating. In addition, we analyze, for the first time to the best of our knowledge, the influence of withdrawal speed, temperature, and relative humidity on refractive-index and physical thickness variations (uncertainties of +/-0.005 and +/-7 nm) during the process. Results provide insight into controlled production of single and multilayer films from complex fluids by dip coating.     

Impact of yttrium on structural,optical and electrical behavior of CuO thin film prepared by JN spray pyrolysis technique for diode application

Journal of Materials Science: Materials in Electronics - The thin films of CuO with yttrium as a dopant at 1, 3, and 5wt% are prepared using a simple and economic JNS spray pyrolysis technique at...     

Preparation and study of sulphide thin films deposited by the dip technique

Cadmium, zinc and Cd-Zn mixed sulphide films were prepared by the dip technique. In this method, the substrate is withdrawn from a methanol solution of the relevant nitrate(s) and thiourea and baked at a high temperature to form the film. The maximum film thickness obtainable per dipping (deposition cycle) is about 5000 Å. CdS films show a zinc blende structure, whereas ZnS films are completely amorphous. Cd-Zn mixed sulphide films consist of an aggregate of amorphous zinc sulphide and partially crystalline CdS phases. The grain size, typically 1 μm, is found to increase with number of dippings.     

Effect of annealing on the electrical, optical and structural properties of cadmium stannate thin films prepared by spray pyrolysis technique

Polycrystalline thin films of cadmium stannate (Cd₂SnO₄) were deposited by spray pyrolysis method on the Corning substrates at substrate temperature of 525 °C. Further, the films were annealed at 600 °C in vacuum for 30 min. These films were characterized for their structural, electrical and optical properties. The experimental results showed that the post-deposition annealing in vacuum has a significant influence on the properties of the films. The average grain size of the film was increased from 27.3 to 35.0 nm on heat treatment. The average optical transmittance in the visible region (500-850 nm) is decreased from 81.4% to 73.4% after annealing in vacuum. The minimum resistivity achieved in the present study for the vacuum annealed films is the lowest among the reported values for the Cd₂SnO₄ thin films prepared by spray pyrolysis method.     

Preparation and characterization of ZnS nanocrystalline thin films by low cost dip technique

Nanocrystalline ZnS semiconducting nanopowder and thin films have been deposited by simple low cost technique based on combination of dip coating and thermal reaction process. The deposited films and the prepared nanopowder have been characterized in the structurally, optically and electrically point of views. The effect of preparation conditions has been also optimized for good quality films. X-ray diffraction analysis performed the ZnS cubic phase in the reaction temperatures in the range 473–593 K. Above 593 K mixed cubic and hexagonal crystallographic phases have been resolved. Crystallite size and micro strain have been calculated to be 2.65 and 0.011 nm, respectively. The deposited film surface and cross section morphologies show that neither cracks nor peels have been observed and good film adhesion with the substrate was performed. Energy dispersive X-ray measurements of the film agree well with the calculated concentrations of the precursor components. Optical measurements confirm the optical characteristics of nanocrystalline ZnS film such as absorption and dispersion properties. Copper doped ZnS reduces the band gap while indium doped ZnS increases the band gap. Electrical characterization shows that copper doped ZnS increases the resistivity by one order of magnitude due to electron compensation process while indium doped ZnS decreases the resistivity three orders of magnitude due to increase of the carriers concentration. Hot probe thermoelectric quick test of ZnS:Cu and ZnS:In show opposite sign of thermoelectric voltage due to bipolar p and n types, respectively.     

Boron-doped zinc oxide thin films prepared by sol-gel technique

Multilayer transparent conducting boron-doped zinc oxide films have been prepared on glass substrates by the sol gel dip coating process. Zinc acetate solutions of 0.4 M in isopropanol stabilized by diethanolamine and doped with boron tri-i-propoxide were used. Each layer was fired at 400–650^∘C in a conventional furnace for 30 min. Selected samples were vacuum annealed at 400–450^∘C for 1 h to improve their electrical properties. The electrical resistivity curve with doping shows a minimum around 0.8 at.%. Excess boron caused a drop of the carrier mobility without acting as donors. Post-deposition annealing sequence was crucial for dopant partial regeneration. Films with an average optical transmittance exceeding 90% can be achieved reproducibly.     

Nonlinear optical properties of laser deposited CuO thin films

In this work we investigate the third-order optical nonlinearities in CuO films by Z-scan method using a femtosecond laser (800 nm, 50 fs, 200 Hz). Single-phase CuO thin films have been obtained using pulsed laser deposition technique. The structure properties, surface image, optical transmittance and reflectance of the films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and UV-vis spectroscopy. The Z-scan results show that laser-deposited CuO films exhibit large nonlinear refractive coefficient, n₂ = − 3.96 × 10^− 17 m²/W, and nonlinear absorption coefficient, β = − 1.69 × 10^− 10 m/W, respectively.     

Study of structural,optical and electrical parameters of ZnSe powder and thin films

Nanocrystalline ZnSe powder and thin film forms have been synthesized via chemical bath deposition technique. The ZnSe thin films are deposited onto ultrasonically clean glass substrates in an aqueous alkaline medium using sodium selenosulphate as Se^2? ion source. The ZnSe powder and thin film are characterized by structural, optical and electrical properties. It is confirmed from X-ray diffraction study that cubic phase is present in ZnSe thin film form with (111) as preferred orientation and hexagonal phase is present in ZnSe powder form with (100) as preferred orientation. Optical absorption measurement indicates the existence of direct allowed optical transition with a wide energy gap and blue shift in the fundamental edge has been observed in both cases. The optical band gap of ZnSe powder is greater than the thin film. The electrical conductivity (both dark and photoconductivity) measurements are also carried out in different temperature range and variation in activation energy has been calculated.     

Tungsten trioxide thin films prepared by electrostatic spray deposition technique

Tungsten trioxide (WO₃) thin films deposited on a Pt-coated alumina substrate using the electrostatic spray deposition (ESD) technique is reported in this paper. As precursor solution, tungsten (VI) ethoxide in ethanol was used. The morphology and the microstructure of the films were studied using scanning electron microscopy coupled with energy dispersive X-ray analysis, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. Dense to porous morphologies were obtained by tuning the deposition temperature. Impedance spectroscopy and current-voltage measurements were used to study the electrical behaviour of the films in air, in temperature range 300-500 °C. The activation energy was estimated from Arrhenius plots. Considering the obtained results, the ESD technique proved to be an effective technique for the fabrication of porous tungsten trioxide thin films.     

Structural and optical properties of TiO2 thin films grown by sol-gel dip coating process

The mono and bi-layer TiO₂ thin films have been prepared by sol-gel method on glass. X-Ray diffraction, Raman spectroscopy, atomic force microscopy, spectroscopic ellipsometry and m-lines spectroscopy techniques have been used to characterize the TiO₂ films. The mono-layer film is found to be amorphous, while the bi-layer film shows the presence of anatase phase. The bi-layer film exhibits more homogeneous surface with less roughness. The thickness effect on the refractive index, extinction ceofficient, packing density and optical band gap is analysed. The waveguiding measurements of the bi-layer film exhibit single-guided TE₀ and TM₀ polarized modes from which we can measure the refractive index and the film thickness.     

Determination of optical parameters of very thin (lambda/50) films

A straightforward approach for estimation of thickness (d), real (epsilon(1)) and imaginary parts (epsilon(2)) of the complex permittivity of very thin films from spectrophotometric measurements is presented. The uncertainties in epsilon(1), epsilon(2), and d due to methodical error and the uncertainties in the measured quantities are investigated. It is shown that the influence of these factors is considerable when epsilon(1), epsilon(2), and d are obtained simultaneously for each wavelength. The accuracy of epsilon(1), epsilon(2), and d is significantly increased if the value of d is evaluated first, its value is kept constant over the whole spectral region, and then epsilon(1) and epsilon(2) are calculated for each wavelength.     

Intrinsic optical and structural properties of SrS thin films

SrS thin films were deposited by electron beam evaporation on heated silica substrates. The optical properties of the layers – complex refractive index and optical band gap –were derived from optical transmission spectra, measured by means of UV-VIS-NIR spectrophotometry. The influence of post-deposition annealing by rapid thermal processing (RTP) was studied. X-ray powder diffraction (XRD) was used to study the film crystal structure and preferential orientation.     

Silicon oxide thin films prepared by a photo-chemical vapour deposition technique

Wide band gap a-SiO_x:H films have been prepared by the photochemical decomposition of a SiH₄, CO₂ and H₂ gas mixture. Deposition parameters namely the CO₂ to SiH₄ gas flow ratio, H₂ dilution and chamber pressure were optimized in order to achieve highly photoconducting (1 × 10^-6 S cm^-1) films with an optical gap of 1.99 eV. The optical gap was found to increase with an increase in the CO₂ to SiH₄ flow ratio. A decrease in the photoconductivity, refractive index, spin g-value and a simultaneous increase in the spin density are attributed to an incorporation of oxygen into the films. Upon hydrogen dilution the photoconductivity of a-SiO_x:H films was observed to improve along with an increase of the optical gap. The spin density of a-SiO_x:H films was of the order of 10¹⁷ cm^-9. The optoelectronic properties of the films have been correlated with the bonding configurations in the film, deposition parameters and the growth kinetics. This revised version was published online in November 2006 with corrections to the Cover Date.