Role of hydrogen in electrical and structural characteristics of bilayer CdTe/Mn diluted magnetic semiconductor thin films

Bilayer thin films of diluted magnetic semiconductor CdTe/Mn have been prepared using vacuum thermal evaporation method at pressure of 10⁻⁵ torr. Annealing of bilayer thin films has been performed in atmospheric condition at constant temperature 400 °C for 1 hour. Hydrogenation of as-grown and annealed bilayer thin films has been performed by keeping these in hydrogenation cell. Structural characteristics of as-grown and heat treated thin films have been performed by X-ray diffractometer. Current–voltage characteristics of both as-grown hydrogenated and annealed hydrogenated bilayer thin films have been studied to find out the effect of hydrogenation. Surface topography of as-grown and annealed bilayer thin films has been confirmed by optical microscopy.     

Selecting a suitable model for characterizing photovoltaic devices

The aim of this work is to evaluate a simple analytical method for extracting parameters involved in the photovoltaic module behaviour equation. Based on a series of experimental voltage–intensity curves obtained under various temperature and irradiance conditions, values are obtained to extract the model parameters, giving rise to adjustment errors at data points (short circuit current, open circuit voltage and voltage at maximum power point) and in the entire curve that are less than 1%. It has also been confirmed that assigning suitable values for series and parallel resistance avoids having to know beforehand the slope value of the characteristic curve, which is not normally indicated in the solar module specifications; this gives rise to good adjustment results between the experimental curves and the theoretical model, even when the theoretical parameters are adapted to other temperature and irradiance conditions.     

Effect of illumination intensity and temperature on the I–V characteristics of n-C/p-Si heterojunction

Krishna et al. (Sol. Energy Mater. Sol. Cells 65 (2001) 163) have recently developed an heterojunction n-C/p-Si in order to achieve low cost and high-efficiency carbon solar cell. It has been shown that for this structure, the maximum quantum efficiency (25%) appears at wavelength λ (600 nm). In this paper, the dependence of I–V characteristics of this heterojunction solar cell on illumination intensity and temperature has been systematically investigated. An estimation of the stability of the solar cell with temperature has been made in terms of the temperature coefficient of I_sc and V_oc. The intensity variation study has been used to estimate the series resistance R_s of the solar cell.The effect of illumination intensity on I–V of n-C/p-Si heterojunction is more complex because the carrier lifetime and the carrier mobility of amorphous carbon are small and also because drift of carriers by built-in electric field plays an important role in these cells. Therefore, the conventional analytical expression for I–V characteristic is not applicable to such solar cells. These structures will not obey the principle of superposition of illuminated and dark current. The experimental results have been analysed by developing empirical relation for I–V.The temperature sensitivity parameters α, the change in I_sc and β, the change in V_oc per degree centigrade have been computed and are found to be 0.087 mA/°C and 1 mV/°C, respectively. This suggests that the heterojunction n-C/p-Si has good temperature tolerance. The value of series resistance has been estimated from the family of I–V curves at various intensities. The R_s is found to be ≈12 Ω, which is on the higher side from the point of view of photovoltaic application.     

Real time estimation of photovoltaic modules characteristics and its application to maximum power point operation

In this paper, an approximate curve fitting method for photovoltaic modules is presented. The operation is based on solving a simple solar cell electrical model by a microcontroller in real time. Only four voltage and current coordinates are needed to obtain the solar module parameters and set its operation at maximum power in any conditions of illumination and temperature. Despite its simplicity, this method is suitable for low cost real time applications, as control loop reference generator in photovoltaic maximum power point circuits. The theory that supports the estimator together with simulations and experimental results are presented.     

Monitoring current–voltage characteristics and energy output of silicon photovoltaic modules

Photovoltaic (PV) system designers use performance data of PV modules to improve system design and make systems more cost effective. The collection of this valuable data is often not done due to the high costs associated with data acquisition systems. In this paper, we report on the design of a low-cost current–voltage (I–V) measuring system used to monitor the I–V characteristics of PV modules. Results obtained from monitoring seven crystalline silicon modules between October 2001 and November 2002 are presented and discussed. Results obtained also show the value of being able to continuously monitor the current–voltage characteristics of PV modules.     

Effects of illumination and Co γ-ray irradiation on the electrical characteristics of porous silicon solar cells

A new approach for hybrid metal–insulator–semiconductor (MIS) Si solar cells is adopted by Institute of Fundamental Problems for High Technology, Ukrainian Academy of Sciences. In order to interpret the effect of illumination and ⁶⁰Co γ-ray radiation dose on the electrical characteristics of solar cells are studied at room temperature. Before the solar cells are subjected to stressed irradiation six different illumination levels of forward and reverse bias I–V measurements are carried out at room temperature. The solar cells are irradiated with ⁶⁰Co γ-ray source irradiation, with a dose rate of 2.12 kGy/h and an over dose range from 0 to 500 kGy. Experimental results shows that both the values of capacitance and conductance increase with increasing illumination levels and give the peaks at high illumination levels. γ-ray irradiation induces an increase in the barrier heights Φ_b(C–V) which are obtained from reverse-bias C–V measurements, whereas barrier heights Φ_b(I–V) which are deducted from forward-bias I–V measurements remain essentially constant. This negligible change of Φ_b(I–V) is attributed to the low barrier height (BH) in regions associated with the surface termination of dislocations. Both the I–V and C–V characteristics indicate that the total-dose radiation hardness of the Si solar cells cannot be neglected according to illumination levels.     

Photovoltaic cells based on chemically deposited p-type SnS

The aim of this work is to attract the attention of the scientific workers in the field of PV conversion of solar energy to SnS polycrystalline thin film as a candidate for construction of cheap solar cells, since it posseses similar photoelectric properties as polycrystalline silicon, but it can be produced on any kind of substrate, by simple, economic and environmentally approved technique. By the use of the method of chemical deposition from two separate solutions, complete preparation of three types of cells was done. All of them use SnS as base absorbing layer, with a difference in the window layer electrode. The first one has CdO, the second one has Cd₂SnO₄ thin film window electrode, both prepared by the chemical deposition method. The third cell was purely Schottky barrier cell in which the window electrode was SnO₂:F, prepared by spray pyrolysis. The I–V, C–V and spectral characteristics were registered and the conclusion was drawn that the best performances has shown the cells with Cd₂SnO₄ film as a window electrode.     

Temperature-dependent properties of organic-on-inorganic Ag/p-CuPc/n-GaAs/Ag photoelectric cell

A thin organic film of copper phthalocynanine (CuPc) as p-type semiconductor was deposited by vacuum evaporation on n-type GaAs single-crystal semiconductor substrate. Electrical, photoelectrical and frequency response of the cells were investigated at a temperature interval of 23–74 °C. Photoelectric characteristics were measured under semiconductor laser beam injection illumination (), while frequency response was investigated by laser beam modulated with a frequency range of 10 Hz–100 kHz.It was observed that cell parameters such as rectification ratio; threshold voltage; nonlinearity coefficient; junction, shunt and series resistances; diode ideality factor and power conversion efficiency were temperature-dependent. Moreover, experimental data showed that open-circuit voltage decreases with an increase in frequency whereas short-circuit AC current falls with frequency but remains constant as a function of temperature. It was further observed that the short-circuit DC current remained constant with an increase in frequency as well as temperature. Based on the experimental data an equivalent circuit of photoelectric cell was proposed to explain the observed behavior.     

Improvement and validation of a model for photovoltaic array performance

Manufacturers of photovoltaic panels typically provide electrical parameters at only one operating condition. Photovoltaic panels operate over a large range of conditions so the manufacturer’s information is not sufficient to determine their overall performance. Designers need a reliable tool to predict energy production from a photovoltaic panel under all conditions in order to make a sound decision on whether or not to incorporate this technology. A model to predict energy production has been developed by Sandia National Laboratory, but it requires input data that are normally not available from the manufacturer. The five-parameter model described in this paper uses data provided by the manufacturer, absorbed solar radiation and cell temperature together with semi-empirical equations, to predict the current–voltage curve. This paper indicates how the parameters of the five-parameter model are determined and compares predicted current–voltage curves with experimental data from a building integrated photovoltaic facility at the National Institute of Standards and Technology (NIST) for four different cell technologies (single crystalline, poly crystalline, silicon thin film, and triple-junction amorphous). The results obtained with the Sandia model are also shown. The predictions from the five-parameter model are shown to agree well with both the Sandia model results and the NIST measurements for all four cell types over a range of operating conditions. The five-parameter model is of interest because it requires only a small amount of input data available from the manufacturer and therefore it provides a valuable tool for energy prediction. The predictive capability could be improved if manufacturer’s data included information at two radiation levels.     

Effect of temperature and electron irradiation on the I–V characteristics of Au/CdTe Schottky diodes

The results of the studies on the effect of temperature and 8 MeV electron irradiation on the current–voltage (I–V) characteristics of the Au/CdTe Schottky diodes are presented in this article. Schottky diodes were prepared by evaporating Au onto n-type CdTe films electrodeposited onto stainless steel substrates. The forward and reverse current–voltage characteristics of these diodes were studied as a function of temperature. The diodes were subjected to 8 MeV electron irradiation at various doses and their effect on the I–V characteristics was studied. Some intrinsic and contact properties such as barrier height, ideality factor, and series resistance were calculated from the I–V characteristics. Diode ideality factor of the junctions were greater than unity. The ideality factor and the series resistance R_s increase with decrease in temperature. The conduction seems to be predominantly due to thermionic emission–diffusion mechanism. The resistance was found to increase with increasing dose. The leakage current, ideality factor and barrier height were found to be unaffected by electron irradiation up to, a dose of about 40 kGy.     

Electrical and photovoltaic properties of devices based on PbPc–TiO2 thin films

The electrical, optical and photovoltaic properties of organic–inorganic hybrid devices consisting of Al/TiO₂/PbPc/ITO and Al/PbPc/TiO₂/ITO structures have been investigated through analyzing the current–voltage characteristics, optical absorption and photocurrent action spectra of the devices. The combined presence of oxygen, light and an electric field in the photocurrent decay of Al/TiO₂/PbPc/ITO device have been studied. It is observed that under illumination, the oxygen radical anions and excitons are formed, which subsequently drift towards the interface with TiO₂, where an internal electric field is present. The excitons that reach to the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The exciton diffusion length for PbPc calculated from the dependence of luminescence with the PbPc film is about 13 nm. We have also studied the effect of PbPc thickness and hole mobility on the device performance of organic photovoltaic device consisting of PbPc as an optically active layer, TiO₂ as the electron–transporting layer and ITO and Al used as electrodes. We have shown that the power conversion efficiency in the device is primarily limited by the short-exciton diffusion length combined with the low-hole mobility in PbPc layer. The model of charge transport in Al/TiO₂/PbPc/ITO device explained the experimental results where the total current density is a function of injected carriers at electrode–organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.     

Investigation of the M/a-Si : H/c-Si structure as a Schottky contact with a diffusion barrier layer

The electrical and photoelectrical characteristics of the a-Si : H/c-Si (p-type) structure are measured. The structure is analysed as a Schottky diode in which the a-Si : H is considered as a diffusion barrier layer. The conventional h.f. C–V theory is simplified and adapted to the analysis, which allows to estimate the initial band bending at the c-Si interface, the built-in electric field in the a-Si : H layer and the differential density of the a-Si : H/c-Si interface states.     

Gettering effects by aluminum upon the dark and illuminated I–V characteristics of N–P–P silicon solar cells

Impurity gettering is an essential process step in silicon solar cell technology. A widely used technique to enhance silicon solar cell performance is the deposition of an aluminum layer on the back surface of the cell, followed by a thermal annealing. The aluminum thermal treatment is typically done at temperatures around 600°C for short times (10–30 min). Seeking a new approach of aluminum annealing at the back of silicon solar cells, a systematic study about the effect the above process has on dark and illuminated I–V cell characteristics is reported in this paper. We report results on silicon solar cells where annealing of aluminum was done at two different temperatures (600°C and 800°C), and compare the results for cells with and without aluminum alloying. We have shown that annealing of the aluminum in forming gas at temperatures around 800°C causes improvement of the electrical cell characteristics. We have also made evident that for temperatures below 250 K, the predominant recombination process for our cells is trap-assisted carrier tunneling for both annealing temperatures, but it is less accentuated for cells with annealing of aluminum at 800°C. For temperatures above 250 K, the recombination proceeds through Shockley–Read–Hall trap levels, for cells annealed at both temperatures. Furthermore, it seems from DLTS measurements that there is gettering of iron impurities introduced during the fabrication processes. The transport of impurities from the bulk to the back surface (alloyed with aluminum) reduces the dark current and increases the effective diffusion length as determined from dark I–V characteristics and from spectral response measurements, respectively. All these effects cause a global efficiency improvement for cells where aluminum is annealed at 800°C as compared to conventional cells where the annealing was made at 600°C.     

Simulation of I–V characteristics of a PV module with shaded PV cells

The authors are studying a diagnostic method of a PV power generating system. We consider that the change of I–V characteristics can be utilized for the diagnosis. However, the report on the change of I–V characteristics is very little. In this paper, we investigate the relation between the output lowering due to shaded PV cells and the change of I–V characteristics, utilizing the computer simulation. It was proven from the simulation that I–V characteristics are changed by the condition of the shadow, which covered the module. The change of I–V characteristics of a PV module with shaded PV cells is discussed by the shift of the avalanche breakdown voltage of shaded PV cells.     

Theoretical assessment of the maximum power point tracking efficiency of photovoltaic facilities with different converter topologies

The operating point of a photovoltaic generator that is connected to a load is determined by the intersection point of its characteristic curves. In general, this point is not the same as the generator’s maximum power point. This difference means losses in the system performance. DC/DC converters together with maximum power point tracking systems (MPPT) are used to avoid these losses. Different algorithms have been proposed for maximum power point tracking. Nevertheless, the choice of the configuration of the right converter has not been studied so widely, although this choice, as demonstrated in this work, has an important influence in the optimum performance of the photovoltaic system. In this article, we conduct a study of the three basic topologies of DC/DC converters with resistive load connected to photovoltaic modules. This article demonstrates that there is a limitation in the system’s performance according to the type of converter used. Two fundamental conclusions are derived from this study: (1) the buck–boost DC/DC converter topology is the only one which allows the follow-up of the PV module maximum power point regardless of temperature, irradiance and connected load and (2) the connection of a buck–boost DC/DC converter in a photovoltaic facility to the panel output could be a good practice to improve performance.     

Determination of solar cell parameters from its current–voltage and spectral characteristics

An algorithm for the calculation of solar cell parameters (series and parallel resistance, diode coefficient, reverse current density) calculation from its current–voltage characteristics at fixed illumination intensity is proposed. The possibility of determining the p–n junction depth on the basis of spectral dependencies of diode photocurrent at different values of the applied bias voltage is shown.     

Capacitive load based on IGBTs for on-site characterization of PV arrays

This paper describes the practical design of a portable capacitive load based on insulated gate bipolar transistors (IGBTs), which is used to measure the I–V characteristics of PV arrays with short-circuit currents up to 80 A and open circuit voltages up to 800 V. Such measurement allows on-site characterization of PV arrays under real operating conditions and also provides information for the detection of potential array anomalies, such as broken cells or defective connections. The presented I–V load is easy to reproduce and low-cost, characteristics that are within the reach of small-scale organizations involved in PV electrification projects.     

Hybrid inverted organic photovoltaic cells based on nanoporous TiO2 films and organic small molecules

Solar cells based on nanoporous TiO₂ films with an inverted structure of indium tin oxide (ITO)/TiO₂/copper phthalocyanine (CuPc):fullerene (C₆₀)/CuPc/poly(3,4-oxyethyleneoxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/Au were fabricated. The best overall photovoltaic performance undergoing a series of device optimization was achieved with the device of ITO/dense TiO₂ (30 nm)/nanoporous TiO₂ (130 nm)/C₆₀:CuPc (1:6 weight) (20 nm)/CuPc (20 nm)/PEDOT:PSS (50 nm)/Au (30 nm). The device using the nanoporous TiO₂ films has better photovoltaic properties compared to those using dense TiO₂ films. Higher photovoltaic performances were obtained by introducing a coevaporated layer of C₆₀:CuPc between TiO₂ and CuPc. The stability of inverted structure was better than that of the normal device, which gives a promising way for fabrication of solar cells with improved stability.     

Studies on the temperature dependence of I–V and C–V characteristics of electron irradiated silicon photo-detectors

The current transport mechanisms of n⁺–p silicon (Si) photo-detectors in different temperature and bias regions before and after irradiation with a dose of 350 kGy has been investigated and presented in this article. Temperature-dependent dark current–voltage (I–V) studies under forward and reverse bias were carried out for this purpose. In the temperature range studied, the dark current contribution in the low bias range is believed to be due to the generation-recombination of minority carriers in the space-charge region. Electron irradiation does not seem to have altered the dark current conduction mechanism. Capacitance–voltage (C–V) at various temperatures was measured to identify the presence of deep levels in the device.     

Influence of electrode on electrical conduction of ZincPhthalocyanine (ZnPc) thin films

The electrical conduction properties of ZincPhthalocyanine (ZnPc) thin films have been studied using copper, silver and aluminium electrodes. The sandwich structures were prepared by the thermal evaporation method. The I–V characteristics were investigated to identify the dominant charge transport mechanism in the films. Among all possible mechanisms, it was observed that the data fits well to the SCLC type of conduction in the Al/ZnPc/Al and Schottky type of conduction prevails in the Ag/ZnPc/Ag and Cu/ZnPc/Cu devices. The trap levels and its dependence of structure have been studied and results are discussed. The charge transport phenomenon in the ZnPc films seems to depend highly on the electrode material and temperature. The carrier mobility increases with increasing temperature whereas the density of trapped holes decreases with increasing temperature. The barrier height also decreases with increase in temperature. The influence of the temperature on the electrical parameters such as saturation current density (J_s), barrier height (Φ_b), density of states in the valence band edge N_d (m⁻³), the position of the Fermi level E_F (eV), ionized acceptor atom density N_e (m⁻³), activation energy ΔΦ (eV), mobilities of hole (μ₀) and the concentration of free holes in the valence band (n₀) have been discussed in detail.