一种用于射频功率放大器的新型预失真器的设计

预失真技术是功率放大器线性化的主要技术之一。分析了传统预失真器不能消除其输出端所产生双音基频分量的特点,提出一种新的预失真器,并利用它改善射频功率放大器的非线性失真。仿真结果表明,该方法可以明显改善射频功率放大器的三阶交调非线性失真。     

无线通信射频功率放大器非线性失真优化设计

宽带无线通信系统中,功率放大器是重要组件,想要提高功率放大器功率就要选择高功率放大器(HPA)。HPA固有非线性特点,信号产生非线性失真,产生的非线性导致信号带失真、带外频谱扩大影响传输信号。因此,通过线性优化提升功率放大器的非线性失真具有重要作用,保证信号稳定、结构简单。鉴于此,笔者结合实践研究,就无线通信射频功率放大器非线性失真优化设计进行简要分析。     

射频功放数字预失真技术探讨

射频功放是线性技术中的一项研究项目,关系到射频功率放大器的应用效果。射频功放中的核心是数字预失真技术,深入研究数字预失真技术,保障其在射频功放中的应用效果,最主要的是满足射频功率放大器的需求,体现数字预失真技术的优势,因此,本文通过对数字预失真技术进行研究,分析其在射频功放中的应用。     

一种模拟预失真技术的宽带功率放大器的研究

介绍了一种新的应用于WGDMA的射频高线性功放系统,采用模拟预失真技术,预失真信号由肖特基二极管的非线性产生,通过该预失真信号抵消主功放的互调成分(IMD),可以大幅度提高射频功率放大器的线性度.将此预失真器应用于WCDMA 16W射频系统中,可以使AGPR改善16dB左右.     

无线通信中有记忆功率放大器的一种预失真方法

在WCDMA等宽带通信系统中,射频功率放大器记忆效应明显,传统的无记忆预失真技术无法达到理想的线性化效果.分析功放的记忆效应,并提出一种适合于有记忆射频功率放大器的顸失真方法.该方法首先基于记忆多项式构造预失真器,然后采用间接学习结构设计预失真系统,并运用限定记忆递推最小二乘算法更新预失真器参数,以跟踪放大器特性的变化.仿真结果表明,该方法能较好地补偿射频功放的非线性失真和记忆效应.     

功率放大器的自适应预失真线性化技术

重点介绍了几种主要的功率放大器的自适应预失真技术,包括基带预失真、中频预失真及射频预失真技术,以及几种自适应预失真工作函数的产生方法,并利用多项式产生工作函数的方法对功率放大器进行预失真调整,使其线性度得到明显改善。     

一种模拟预失真自适应线性化方法

针对射频功率放大器的非线性问题,提出一种基于两个复量多项式的模拟预失真电路,并根据射频功率放大器的响应用LMS(最小均方)算法自适应优化多项式的系数,从而使功率放大器的线性性能达到最佳。该预失真器的优点是电路简单,运算量少,适用于宽带通信。基于双频信号和WCDMA(宽带码分多址)信号对该预失真器进行了仿真测试。实验结果表明,该预失真线性化方法对交调失真分量抑制效果明显,ACPR(邻信道功率比)可改善至56.1dB,对功率放大器的非线性具有良好的补偿效果。     

一种射频功率放大器自适应预失真线性化技术

研究一种用于改善射频功率放大器非线性失真的预失真技术。文中给出了平行式失真信号产生电路结构,提出了该电路改善射频功率放大器非线性新的应用方式,并对其特性进行了分析,在此基础上添加了自适应控制电路,提高了系统的稳定性。最后给出了ADS仿真结果。实验结果表明,IMD3的性能得到有效的改善。     

射频功率放大器的非线性研究

本文提出了一种基于幂级数法(Power级数法)的射频功率放大器的非线性带通模型;并对典型限带信号通过射频功率放大器后的频谱密度进行了分析与计算,对功率放大器的设计及其失真研究具有指导意义.     

逆F类功放数字预失真改进算法

针对逆F类射频功率放大器高效率实现带来的严重的非线性失真,提出基于幅度索引的查找表(LUT)模型数字预失真改进算法,以获得具有高线性和高效率的逆F类射频放大系统。由于逆F类功放复杂的特性曲线,传统LUT数字预失真算法已经不能很好地拟合功放模型,为此采用非均匀取点拟合,并且结合多项式、EWMA和平滑等曲线拟合方法。实验结果表明:运用该方法,使3载波WCDMA信号施加到中心频率为930 MHz的逆F类功率放大器后的非线性失真现象明显改善。     

1480-nm pumped erbium-doped fiber amplifiers with optimized noiseperformance for AM-VSB distribution systems

Within analog video transmission systems, optical amplifiers have to display simultaneously good noise and output power performance because of the very stringent carrier-to-noise ratio requirements imposed by the AM-VSB modulation format. We show, theoretically and experimentally, that properly designed forward 1480-nm pumped erbium-doped fiber amplifiers can deliver +16 dBm saturated output power with noise parameter (n_sp/C_x) as low as 3.5dB. These amplifiers do not exhibit significant degradation of their noise performance when the input powers are as large as +3 dBm. These characteristics make 1480-nm pumped amplifiers suitable for AM-VSB transmission systems     

50-GHz SiGe HBT distributed amplifiers employing constant-k and m-derived filter sections

This paper describes two single-ended three-stage SiGe HBT distributed amplifiers employing constant-k filter sections, m-derived filter sections, and a metal or a deep-trench ground plane in the artificial transmission lines. The distributed amplifiers exhibit a measured passband of 100 MHz-50 GHz; they have a small die size (1.0/spl times/1.1 mm/sup 2/) and low power consumption (125 mW). The measured results demonstrate that distributed amplifiers in SiGe can be competitive with those in III-V processes.     

Gain saturation behavior in L-band EDFAs

The gain saturation behavior of an L-band erbium-doped fiber amplifier is investigated. Experimental results show that amplifiers configured to operate in the L-band exhibit decidedly different saturation behavior compared to what is observed in C-band amplifiers. It is shown that the gain can vary by as much as 2.3 dB. Results suggest that the unique saturation behavior observed in the L-band is due, in part, to backward traveling amplified spontaneous emission power     

Novel single-ended CMOS transconductance amplifiers

Two novel CMOS single-ended amplifiers are presented. Suitable for switched-capacitor-filter designs, they exhibit high gain and bandwidth as well as high PSRR, low power and small size.     

Design of broadband microwave amplifiers with mixed-elements via reflectance data modeling

A practical method is introduced, to design single-stage broadband microwave amplifiers with mixed lumped and distributed elements via modeling the reflectance data obtained from lumped-element input and output matching network prototypes. The same transducer power gain level is obtained by using less number of lumped-elements in the mixed-element amplifier than that of the lumped-element amplifier prototype. A mixed-element amplifier design is presented, to exhibit the utilization of the method. It is expected that the method will be employed, to design microwave amplifiers for broadband communication systems.     

Experimental performance of an adaptive digital linearized poweramplifier [for cellular telephony]

Amplification of linear modulation schemes, (which exhibit fluctuating envelopes), by high power amplifiers invariably leads to the generation of distortion and intermodulation products. Recent theoretical work has suggested that a complex gain predistorter may be employed to linearize a nonlinear power amplifier. The authors present experimental results demonstrating that a reduction in out-of-band spectra in excess of 20 dB may be achieved by employing digital feedback and a complex gain predistorter     

Statistical analysis of coherent ultrashort light pulse CDMA with multiple optical amplifiers using additive noise model

This paper describes a study of the performance of various configurations for placing multiple optical amplifiers in a typical coherent ultrashort light pulse code-division multiple access (CULP-CDMA) communication system using the additive noise model. For this study, a comprehensive performance analysis was developed that takes into account multiple-access noise, noise due to optical amplifiers, and thermal noise using the saddle-point approximation technique. Prior to obtaining the overall system performance, the input/output statistical models for different elements of the system such as encoders/decoders, star coupler, and optical amplifiers were obtained. Performance comparisons between an ideal and lossless quantum-limited case and a typical CULP-CDMA with various losses exhibit more than 30 dB more power requirement to obtain the same bit-error rate (BER). Considering the saturation effect of optical amplifiers, this paper discusses an algorithm for amplifiers' gain setting in various stages of the network in order to overcome the nonlinear effects on signal modulation in optical amplifiers. Finally, using this algorithm, various configurations of multiple optical amplifiers in CULP-CDMA are discussed and the rules for the required optimum number of amplifiers are shown with their corresponding optimum locations to be implemented along the CULP-CDMA system.     

110 GHz以上固态功率放大器的发展现状

基于近几年的文献报道,综述了110GHz以上固态功率放大器的现状和电路结构。归纳了每个固态放大器的工作频率、制作工艺、最大输出功率（Psal）、最大输出的压缩增益、小信号增益、1dB压缩点增益（P-）,功率附加效率（PAE）、带宽等指标。对每个固态放大器的电路结构进行了总结,讨论了这些电路结构在太赫兹频段的应用。并根据ITRS的文献展望了未来固态晶体管的发展。最后讨论了未来太赫兹固态功率放大器集成到太赫兹数模系统的方式。     

Optical power monitors in Ge monolithically integrated on SOI chips

We report on the fabrication and operation of optical power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide pn heterojunction photodiodes in evaporated germanium. The low temperature growth of Ge is compatible with silicon waveguide technology. The photodetectors exhibit typical responsivities of 10-30 mA/W; the power monitors are used with front-end trans-impedance amplifiers based on commercially available operational amplifiers and can operate with optical signals as small as 10 nW, with errors below 0.2% and 2% at 1 and 0.1 μW, respectively.     

4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOStechnology on SOI, SOS, and bulk substrates

Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-1 μm CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk, SOI, and SOS amplifiers exhibit forward gains of 14, 11, and 12.5 dB and F_min's of 4.5 (bulk) and 3.5 db (SOS). The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and F_unn's of 4.9 and 7.8 dB. The 4-GHz bulk amplifier has the highest resonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequencies greater than 10 GHz. These and other measurement results suggest that it may be possible to implement 20-GHz tuned amplifiers in a fully scaled 0.1-1 μm CMOS process