Mo-CVD法制备GaAs和CdTe的特种材料研究

用Mo-CVD技术已研制了几种特种半导体材料,(1)注氧GaAs衬底上生长GaAs:根据注氧剂量的不同,已获得各种结晶的GaAs外延层。这种材料将在选择外延中起重要作用;(2)Mo/Si衬底上生长GaAs:由于面积大,价格低和结晶性能较好,GaAs/Mo/Si材料可能成为有前途的太阳电池材料;(3)在GaAs衬底上生长CdTe:CdTe/GaAs是一种复合材料,它有望代替CdTe单晶成为HgCdTe外延的代用衬底。这三种材料的电性和结晶性能已用C-V,I-V,S。E。M和电子衍射以及用x射线能谱进行了研究和测量。     

用溅射沉积生长高质量的GaAs外延膜

近来,溅射法已用于各种单晶元素、化合物、合金和超晶格半导体的生长。对于Ⅲ-Ⅴ族化合物半导体来说,单晶的生长大多与诸如InSb、GaSb、In_(1-x)Ga_xSb、InSb_(1-x)Bi_x和InSb/GaSb超晶格的Sb基化合物和合金有关。从非掺杂的GaAs源中,通过溅射沉积法在(100)掺Cr的GaAs衬底上生长GaAs外延膜。非故意掺杂的样品为n型高阻(10~5～10~9Ω·cm),室温迁移率高达5000cm~2/v·     

MOCVD法在GaAs衬底上生长Hg1—xCdxTe和过渡层研究

用改进的 MOCVD 装置成功地在 GaAs 衬底上生长了 CdTe 过渡层,获得了适合于生长Hg_(1-x) Cd_xTe(CMT)的 CdTe/GaAs 复合衬底材料。所得 CMT 的 x 值可在0.2～0.8之间变化,其电学性质与 CdTe 过渡层厚度有一定关系,其红外透过率大于70%。     

掺Zn—InP的热处理

InP 单晶衬底已广泛用于制备长波长光纤通信的激光器和探测器。除了一般的 n 型衬底材料以外,p 型材料的使用也受到重视并获得成功。因为锌在 InP 中具有杂质效应,所以掺锌生长 p-InP 还能获得低位错或     

GSMBE InGaP/GaAs材料大面积均匀性研究

报道了气态源分子束外延 (GSMBE)技术生长的Φ5 0mm ,Φ75mmInGaP/GaAs材料的晶体完整性 ,组分均匀性和表面缺陷密度。用PhilipsX Pert′s四晶衍射仪沿Φ5 0mm ,Φ75mmInGaP/GaAs样品的x轴和y轴以 5mm间隔测量ω/2θ双晶摇摆曲线 ,获得沿x轴和y轴方向的晶格失配度分布和组分涨落分布。结果表明 ,用GSMBE生长的Φ5 0mm和Φ75mmIn0 .4 9Ga0 .51 P与GaAs衬底的失配度分别为 1× 10 - 4和 1× 10 - 5,组分波动Φ5 0mm沿x轴和y轴分别为± 0 .1%和± 0 .2 % ,Φ75mm <± 1%。表面缺陷密度在 1× 10～ 1× 10 2 cm- 2 。     

氧离子注入无定形GaAs的形成及其在外延中的应用

用能量为60kev而剂量不同的氧离子注入研究了GaAs无定形层的形成,并从光吸收法测量计算了形成无定形层所需的临界剂量和能量,分别为5×10~(14)O~+/cm~2和每原子38ev。用氧离子注入的GaAs衬底在MO-CVD反应器中进行了GaAs外延生长。发现随着离子注入造成的表面损伤密度的增加,外延单晶过渡到不生长晶核,这就为选择外延获得应用提供了可能性。     

国内MOCVD化合物半导体材料的新进展

金属有机气相沉积法(MOCVD)已受到国内外普遍重视,MOCVD技术所用的关键原材料也已研制成功。近年来,国内采用MOCVD技术在GaAs衬底上已生长出GaAlAs、HgCdTe、ZnSe等异质结材料,以InP、CaF_2作衬底,也生长了某些半导体薄膜材料。     

氯化物体系气相外延镓铟砷

本文报告用Ga/InAs/AsCl_3/H_2体系,在GaAs衬底上气相外延Ga_(1_x)In_xAs的结果。通过生长过渡层,降低晶格失配;用水平舟生长的InAs源,并适当选择生长参数,得到表面光洁、完整性较好的外延层。组份x值在0.25以内,最佳电性为:     

低压化学气相沉积生长双层石墨烯及其电输运特性研究

采用低压化学气相沉积法(LPCVD)以铜箔为生长衬底来制备石墨烯。XRD表征得石墨烯生长前后铜箔衬底主要为(100)晶面,而且铜箔在高温下退火晶粒明显长大有利于高质量石墨烯的生长。拉曼光谱表明所制备的石墨烯为双层结构。通过转移、刻蚀等工艺制备了石墨烯场效应晶体管(G-FET)原型器件,其转移特性曲线(IDS-VGS)表明所制备的石墨烯表现为p型输运特性。在器件中石墨烯的XPS图谱说明了石墨烯吸附有有机物基团,导致p型特性的部分原因。同时本文研究了真空退火对G-FET器件性能的影响,结果表明:退火温度为200℃时,G-FET的空穴载流子迁移率最佳;而随着温度增加,开关比(ON-OFF ratio)在不断减小,载流子迁移率迅速在降低。     

InGaAs/InP HBT材料的GSMBE生长及其特性研究

本文报道了采用气态源分子束外延 (GSMBE)技术生长InGaAs/InP异质结双极晶体管 (HBT)材料及其特性的研究。通过对GSMBE生长工艺的优化 ,在半绝缘 ( 10 0 )InP衬底上成功制备了高质量的InGaAs/InPHBT材料 ,InGaAs外延层与InP衬底的晶格失配度仅为 4× 10 - 4量级 ,典型的InP发射区掺杂浓度 ( 4× 10 1 7cm- 3)时 ,电子迁移率为 80 0cm2 ·V- 1 ·s- 1 ,具有较好的电学特性 ,可以满足器件制作的要求。     

China's Major Non-ferrous Metals Imports & Exports

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Zinc Production by Province in 2014

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80% of Chinese Firms Purchasing Overseas Mines Ended up in the Red

<正>Minmetals Resources acquired the world’s largest copper mine under construction for USD5.85 billion.One after another,listed companies Jien Nickle,China Molybdenum and Chihong Zinc and Germanium raised money to get involved in overseas mining projects…SOEs and private enterprises are engaged in a frenzy of overseas mine purchasing.A reporter with Economic     

Copper Processing Profit Dropped Sharply,Copper Consumption Will Face Impact in the Second Half of the Year

正Judging from China’s copper consumption field,the biggest consumption unit is electric power,which accounts for 47%of total consumption;it is followed by light industry sector,including household electrical appliance,machinery,durable goods and hardware etc,which accounts for 22%of total consumption;followed by transportation field,     

Central Geological Prospecting Fund Newly Added 16.47 Million Tonnes of Bauxite in 2013

正In 2013,the Central Geological Prospecting Fund(CGPF)Project newly discovered 15 ore fields,including 3 large above ore fields,and 5medium sized ore fields.The reporter learned from the recently published"Annual Report of Central Geological Prospecting Fund Project(2013)"that,from 2006 to 2013 the CGPF     

Manufacturers of Copper Tube for Central Air Conditioner Use Face Mounting Pressure in the Final Quarter of the Year

正This year,the investment growth rate of real estate industry continued to slow down,sold area of commercial housing also dropped significantly,which brought huge pressure to the domestic air conditioning manufactures.In the first half of the year,by relying on high growth in national financial expenditure,along with investment in public infrastructure     

Xinjiang Ranks No.1 in Production of Primary Aluminum in China

正Kang Yi,Honorary Chairman of China Nonferrous Metals Industry Association,said recently at the Forum on Development of the Non-ferrous Metals Industry in Central and Western China held in Zhengzhou that,as more and more electrolytic aluminum factories in Xinjiang came into operation,the electrolytic aluminum output of Xinjiang had reached2,275,000 tons in the first 7 months this year,     

Shenhuo Coal Industry and Electricity Power Completed800,000 t/a Aluminum Project in Xinjiang

正"Xinjiang project has been completed according to schedule,but total completion and total start of production are two different concepts,after completion it still needs a gradual process of reaching production target."On the morning of November 3,Shenhuo Coal Industry and Electricity Power told investors the above statement on the investor interaction platform.     

Guangdong Metal Transaction Center has Become the Second Largest Precious Metal Transaction Platform Nationwide

正The reporter learned from Guangdong Province Precious Metal Transaction Center that in 2013the Center maintained healthy development momentum,and had become the second largest precious metal transaction platform in China in terms of market size;currently Guangdong is quickening steps of financial innovation for the Center,aiming to build a transaction center with international core competitiveness.     

Seven Rare Earth Projects Involving Close to 3 Billion Yuan Investment Landed In the HighTech Zone

正On May 22,Baotou Rare Earth Industry Cooperation Consultation MeetingProject Agreement-signing Ceremony was held in Ningbo,nearly 40 enterprises from Ningbo,Guangdong,Hunan,and Shanxi participated in project consultation.After multi-lateral communication,agreements were signed for a total of 7 rare earth projects successfully.