Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

A practical and accurate parameter extraction method is presented for the Fourier-based-solution physics-based insulated gate bipolar transistor (IGBT) and power diode models. The goal is to obtain a model accurate enough to allow switching loss prediction under a variety of operating conditions. In the first step of the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the six parameters required for the diode model and of the 12 and 15 parameters required for the nonpunch-through (NPT) and punch-through (PT) IGBT models, respectively. The second part of the extraction procedure is an automated formal optimization step that refines the parameter estimation. Validation with experimental results from various structures of IGBT demonstrates the accuracy of the proposed IGBT and diode models and the robustness of the parameter extraction method.     

Design of IGBT with integral freewheeling diode

A new power structure integrating a freewheeling diode in the termination region of a punch-through (PT) insulated gate bipolar transistor (IGBT) is presented. The proposed solution requires virtually no silicon area penalty with respect to a standard IGBT. Static and dynamic experimental results show the correct behavior of both IGBT and freewheeling diode. Further, it is shown that the lateral diode surrounding the multicellular IGBT can support IGBT direct current with low on-state voltage drop. The operation mechanisms of the composite structure and design techniques to improve structure dynamic behavior are investigated through two-dimensional numerical device simulations     

IGBT短路保护的驱动电路的设计

IGBT（绝缘栅双极型晶体管）在现代电力电子技术中得到越来越广泛的应用。文中主要对绝缘栅双极型晶体管的驱动和短路保护电路进行了研究。首先谈论了IGBT的驱动电路的基本要求和短路保护分析,然后运用IGBT集电极退饱和原理,提供了一个采用分立元件构成的IGBT具有短路保护功能的驱动电路。理论分析和实验结果证明了所设计驱动电路的可行性,而且该电路简单实用,可靠性高。     

IGBT在照相机闪光灯电路中的应用

介绍IGBT在照相机闪光灯电路中的应用。     

A laser diode model based on temperature dependent rate equations

Terms are included in the model to account for the variation in the laser's differential gain coefficient and transparency carrier density with temperature. The model shows good agreement with DC experimental results and is useful for the design of the control circuitry of laser diode-based optical transmitters operating over a wide range of temperatures. This is particularly important when noncooled lasers are used. The model can easily be extended to investigate transient behavior of the laser with change in temperature     

Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator

Dynamic electrothermal circuit simulator models are developed for silicon carbide power diodes. The models accurately describe the temperature dependence of on-state characteristics and reverse-recovery switching waveforms. The models are verified for the temperature dependence of the on-state characteristics, and the di/dt, dv/dt, and temperature dependence of the reverse-recovery characteristics. The model results are presented for 1500 V SiC Merged PiN Schottky (MPS) diodes, 600 V Schottky diodes, and 5000 V SiC PiN diodes. The devices studied have current ratings from 0.25 A to 5 A and have different lifetimes resulting in different switching energy versus on-state voltage trade-offs. The devices are characterized using a previously reported test system specifically designed to emulate a wide range of application conditions by independently controlling the applied diode voltage, forward diode current, di/dt, and dv/dt at turn-off. A behavioral model of the test system is implemented to simulate and validate the models. The models are validated for a wide range of application conditions for which the diode could be used.     

新型IGBT驱动脉冲变压器电路设计

提出了新型IGBT驱动脉冲变压器隔离传输电路。脉冲变压器原边隔直电容把PWM变换成正负窄脉冲信号,副边RS触发器对窄脉冲进行还原。在PSPICE软件中对电路进行了仿真并做了相关实验,仿真和实验结果验证了新型电路在解决大功率IGBT驱动信号传输中占空比受限等问题的有效性,并在成本、体积等方面有一定的优势。     

An experimentally verified IGBT model implemented in the Sabercircuit simulator

A physics-based IGBT model is implemented into the general purpose circuit simulator Saber. The IGBT model includes all of the physical effects that have been shown to be important for describing IGBTs, and the model is valid for general external circuit conditions. The Saber IGBT model is evaluated for the range of static and dynamic conditions in which the device is intended to be operated, and the simulations compare well with experimental results for all of the conditions studied     

多路输出IGBT驱动电路的设计

介绍了大功率IGBT的驱动原理及工作特性,设计了一种高可靠可维护具有四路驱动信号输出的高电压大功率IGBT驱动电路,给出了电路的原理图和关键参数设计原理及相关波形。     

带有固定延迟时间的IGBT去饱和过流检测电路

提出了一款带有固定延迟时间的绝缘栅双极型晶体管(IGBT)去饱和(DESAT)过流检测电路。在IGBT去饱和过流检测电路中加入固定延时电路,当检测到过流信号后关断IGBT,防止IGBT被烧毁。同时固定延时电路开始计时,经历了固定延迟时间后,电路错误信号清除,IGBT恢复正常工作状态,提高了IGBT功率回路的可靠性与安全性。将固定延时电路集成在IGBT驱动芯片中,提高了系统的集成度。采用UMC 0.6μm高压BCD工艺模型对去饱和过流检测电路进行前仿和后仿。仿真结果表明,采用线性温度补偿方法,基准电路的过流阈值电压典型值为6.97 V,温度系数为19.5×10^-6/℃。IGBT开启后消隐时间为920 ns。在不同工艺角仿真中,后仿固定延迟时间在2.8~4 ms之间变化,典型值为3.3 ms,使功率回路储能元件中的冗余能量充分释放。     

A low-cost driving simulator for full vehicle dynamics simulation

This paper describes the construction of a low-cost PC-based driving simulator that can perform five degree-of-freedom (DOF) motions similar to a road vehicle. The mathematical equations of vehicle dynamics are first derived from the 2-DOF bicycle model and incorporated with the tire, steering, and suspension subsystems. The equations of motion are then programmed by MATLAB, transferred into C++ code in the MIDEVA environment, and further developed into a motion platform control program by C++Builder. To achieve the simulator functions, a motion platform that is constructed by five hydraulic cylinders is designed, and its kinetics/inverse kinetics analysis is also conducted. Driver operation signals such as steering wheel angle, accelerator pedal, and brake pedal positions are measured to trigger the vehicle dynamics calculation and further actuate the cylinders by the motion platform control program. In addition, a digital PID controller is added to achieve the stable and accurate displacements of the motion platform. The experiments prove that the designed simulator is adequate in performing some special road driving situations discussed in this paper.     

IGBT驱动与保护电路的研究

绝缘栅双极型晶体管(IGBT)在电力电子技术中得到广泛的应用,在实际应用中合理选用IGBT的驱动电路和保护措施,是保证电路安全可靠工作的关键.     

Circuit reliability simulator for interconnect, via, and contactelectromigration

A model for predicting Al interconnect and intermetallic contact/via electromigration time-to-failure under arbitrary current waveform is incorporated in a circuit electromigration reliability simulator. The simulator can (1) generate layout advisory for width and length of each interconnect, and the number of contacts and vias at each node in a circuit, and (2) estimate the overall circuit electromigration failure rate and/or cumulative percent failure as functions of time, temperature, voltage, frequency, and previous stress (e.g., burn-in)     

Multistate Markov models for systems with dependent units

A system that can be described by a homogeneous continuous-time discrete-state Markov process is treated. The case in which transition rates for each unit depend on the current state of the system is considered. The condition in which the transition-rate matrix of the system has the form of a modified Kronecker sum of transition-rate matrices of its units is investigated. An algorithm based on the Kronecker algebra is introduced for determining the transition-rate matrix of the system. its use is particularly efficient during construction of machines when reliability is evaluated for several systems with the same structure but different transition rates     

带软关断和欠压保护的IGBT去饱和过流检测电路

基于0.4 μm标准BCD工艺,设计了一种带有软关断和欠压保护的IGBT去饱和过流检测电路(DESAT)。采用Cadence软件设计并搭建电路,在Hspice软件中进行仿真调试。结果表明,在开始一段时间,欠压锁定电路(UVLO)输出低电平,强制使器件处于关断状态;当UVLO输出高电平之后,DESAT被激活并开始检测集电极电压,一旦检测到集电极电压超过预设6.5 V阈值电压,便对器件执行软关断动作,软关断的持续时间为10 μs。该检测电路实现了UVLO和DESAT对IGBT的协同保护。     

大功率IGBT驱动电路设计与应用

绝缘栅型双极性晶体管Insulated Gate Bipolar Transistor(IGBT)作为电力变换装置的核心器件,它的可靠稳定工作直接影响着系统的性能,这对IGBT的驱动电路提出了很高的要求。针对500kW光伏逆变器,基于该逆变器的结构拓扑和IGBT型号,给出了一种IGBT驱动电路的设计方案,研究了驱动电路和保护电路的主要设计原理和注意问题。最后,结合实际应用,给出了该驱动电路的驱动波形和逆变交流侧电流波形,分析和讨论了该驱动电路设计的可靠性与合理性。     

IGBT驱动保护电路的改良设计

在实际应用电力电子技术过程中,绝缘栅双极晶体管(IGBT)驱动保护电路的合理设计应根据具体器件的特性,选择合适的参数,使之实现最优驱动和有效可靠的保护.文中针对具体工程,对IGBT驱动保护电路的难点进行了分析,采用连续调节IGBT保护整定值的办法实现精确检测及使用延时判断电路用以判断真假过流的设计思想,对常用的IGBT驱动保护电路进行改进,克服了在使用中无过流自锁功能、过流保护的阈值过高、无法对真假过流进行判断的缺陷,获得令人满意的实验结果,已安全应用于有源电力滤波器装置中.     

一种双极性高精度半导体激光器温度控制系统

温度是影响半导体激光器（LD）寿命和输出特性的重要因素之一。为保证LD输出稳定的激光模式和功率,采用以ADC和DAC集成的微处理器芯片C8051F350和具有双极性输出电流的TEC驱动芯片MAX1968为控制核心,以积分分离和变速积分增量式相结合的数字PID算法为运算程序的自动温度控制系统(ATC)控制TEC驱动电流的方向和大小,实现对LD的加热或制冷,使其工作在恒定温度。实验证明,应用该系统,LD在0℃～40℃环境温度范围内能很快稳定在设定温度,且其不确定度为±0.03℃。     

IGBT在发射机功率开关电路中应用研究

DF100APSM短波发射机在大功率短波台是运用最广泛的机型,IGBT以其驱动简单快速、驱动功率小而饱和压降低的优点,在此机型的功率模块中应用,本文结合实际电路,探讨了IGBT的原理及电路应用及维护,为实际应用中电路的熟悉和维护提供借鉴。     

Driving current and temperature dependent magnetic-field modulated electroluminescence in Alq3-based organic light emitting diode

Driving current and temperature dependences of magnetic-field modulated electroluminescence (EL) in tris(8-hydroxyquinoline) aluminum (Alq₃)-based OLEDs have been thoroughly investigated. At low temperatures, the applied magnetic-field induces a sharp increase of the EL in low field regime (B ? 35 mT) and a slow but apparent decrease at high fields (35 ? B ? 500 mT). The low-field increase in EL (LFE) survives at all working temperatures while the high-field decrease (HFE) gradually disappears as temperature is increased. At a given temperature, the higher the current level, the smaller LFE and stronger HFE are observed. To explain the observed MFEs a composite model based on magnetic-field dependent singlet-to-triplet conversion of electron-hole pairs and magnetic-field mediated triplet–triplet annihilation process is proposed in this paper.