Nitrogen doped p-type SnO thin films deposited via sputtering

p-Type SnO thin films were fabricated via reactive RF magnetron sputtering on borosilicate substrates with an Sn target and Ar/O₂/N₂ gas mixture. The undoped SnO thin film consisted of a polycrystalline SnO phase with a preferred (1 0 1) orientation; however, with nitrogen doping, the preferred orientation was suppressed and the grain size decreased. The electrical conductivity of the undoped SnO thin films demonstrated a relatively low p-type conductivity of 0.05 Ω⁻¹ cm⁻¹ and it was lowered slightly with nitrogen doping to 0.039 Ω⁻¹ cm⁻¹. The results of the X-ray photoelectron spectroscopy suggested that the nitrogen doping created donor defects in the SnO thin films causing lower electrical conductivity. Lastly, both the undoped and doped SnO thin films had poor optical transmittance in the visible range.     

Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals

High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm^2°V^− 1s^− 1 and about 3 × 10^18°cm^− 3 at 600 °C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed.     

Hybrid p-type ZnO film and n-type ZnO nanorod p-n homo-junction for efficient photovoltaic applications

Simple hybrid p-n homo-junctions using p-type ZnO thin films and n-type nanorods grown on fluorine tin oxide (FTO) substrates for photovoltaic applications are described. The ZnO nanorods (1.5 μm) were synthesized via an aqueous solution method with zinc nitrate hexahydrate and hexamethylenetetramine on ZnO seed layers. The 10-nm-thick ZnO seed layers showed n-type conductivity on FTO substrates and were deposited with a sputtering-based method. After synthesizing ZnO nanorods, aluminum-nitride co-doped p-type ZnO films (200 nm) were efficiently grown using pre-activated nitrogen (N) plasma sources with an inductively-coupled dual-target co-sputtering system. The structural and electrical properties of hybrid p-n homo-junctions were investigated by scanning electron microscopy, transmittance spectrophotometry, and I-V measurements.     

Deposition and characterization of highly p-type antimony doped ZnTe thin films

We report deposition of highly p-type antimony doped ZnTe films onto glass substrates using ZnTe and Sb effusion cells in ultra-high-vacuum environment of an MBE system. It was found that the widely-used conventional co-evaporation technique does not produce highly p-type films. Through a series of deposition experiments, a 4-step method consisting deposition of the layers followed by a post annealing process was developed. The maximum carrier concentration was 3 × 10¹⁹ cm⁻³ which is the highest reported for ZnTe:Sb films. The surface morphology and the structure of the films were analyzed using AFM and XRD. Electrical properties of Sb doped films were investigated by four-point probe and room temperature Hall effect measurements.     

Optical and photoconductivity properties of ZnO thin films grown by pulsed filtered cathodic vacuum arc deposition

High quality transparent conductive ZnO thin films with various thicknesses were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system on glass substrates at room temperature.The high quality of the ZnO thin films was verified by X-ray diffraction and optical measurements. XRD analysis revealed that all films had a strong ZnO (200) peak, indicating c-axis orientation. The ZnO thin films are very transparent (92%) in the near vis regions. For the ZnO thin films deposited at a pressure of 0.086 Pa (6.5 × 10⁻⁴ Torr) optical energy band gap decreased from 3.21 eV to 3.19 eV with increasing the thickness. Urbach tail energy also decreased as the film thickness increased.Spectral dependence of the photoconductivity was obtained from measurements of the samples deposited at various thicknesses. Photoconductivities were observed at energies lower than energy gap which indicates the existence of energy states in the forbidden gap. Photoconductivities of ZnO thin films increase with energy of the light and reach its maximum value at around 2.32 eV. Above this value surface recombination becomes dominant process and reduces the photocurrent. The photoconductivity increases with decreasing the film thickness.     

Hydrogen and nitrogen incorporation in ZnO thin films grown by radio-frequency (RF) sputtering

Bipolar conduction of electron and holes is mandatory for many electronic and optoelectronic applications of ZnO. Among the impurity atoms suited for acceptor formation nitrogen is the prime candidate. Controlling the incorporation without the formation of deep donors and acceptors and avoiding the deterioration of the materials quality are the main goals for homo- and hetero-epitaxially grown ZnO films. We report on the sputter deposition of N-doped ZnO layers and will show by SIMS and Raman spectroscopy how the substrate type and substrate temperature influence the nitrogen incorporation.Hydrogen in ZnO plays an unusual role since it acts as a shallow donor and may control the n-type conductivity in nominally undoped material. However, it can also be used as an n-type dopant. We will demonstrate this behavior using Hall and optical transmission measurements made on ZnO films prepared by RF-magnetron sputtering. The incorporation of hydrogen as a function of the substrate temperature as well as its thermal stability was investigated by SIMS.     

ZnO sputter coating on SnO2 nanowires: Effects of thin coating and subsequent thermal annealing

The structural and optical properties of SnO₂–ZnO core–shell nanowires were studied and the effects of thermal annealing were investigated. As-prepared SnO₂–ZnO core–shell nanowires exhibited a smooth and continuous shell layer along the nanowire, with a thickness in the range of 5–10 nm. While the thin ZnO shell layer disappeared after annealing at 800 °C, this did not occur after annealing at 600 °C. The as-fabricated SnO₂–ZnO core–shell nanowires exhibited yellow emission, presumably from the core SnO₂ nanowires. The UV emission from ZnO shell layer was obtained by annealing at 600 °C, whereas it was removed by annealing at 800 °C.     

Growth and properties of transparent p-NiO/n-ITO (In2O3:Sn) p-n junction thin film diode

We have grown “all oxide” transparent p-n junction thin film nanostructure device by using chemical solution deposition and E-beam evaporation onto SiO₂ substrate. Combined grazing incidence X-ray diffraction and atomic force microscopy confirm phase pure, mono-disperse 30 nm NiO and 2 at. wt.% Sn doped In₂O₃ (ITO) nanocrystallites. Better than 70% optical transparency, at a wavelength of 600 nm, is achieved across 160 nm thick p-n junction. The optical band gap across the junction was found to decrease as compared to the intrinsic ITO and NiO. The current-voltage (I-V) characteristics show rectifying nature with dynamic transfer resistance ratio of the order of 10³ in the forward bias condition. Very small reverse leakage current with appreciable breakdown was observed under the reverse bias condition. The observed optical and electrical properties of oxide transparent diode are attributed to the heteroepitaxial nature and carrier diffusion at the junction interface.     

Photoluminescence and photoconductivity studies of oriented polyfluorene thin films

Photoluminescence and photoconductive properties of poly(9,9-dioctylfluorene) (F8) on rubbed polyimide (PI) alignment layers have been studied. The F8 thin films are highly oriented, which is manifested from polarized absorption, fluorescence, and photoconductivity spectra (the order parameter of F8 is 0.86). The ratio of photocurrent parallel to perpendicular directions to the rubbing direction (photoconductivity anisotropy) is 18 at 2.9 eV for F8. Effects of C₆₀ addition to F8 on the optical properties are also studied. C₆₀ addition to F8 significantly increases photoconductivity but decreases the order parameter (0.67) and the photoconductivity anisotropy (7 at 2.9 eV). Both F8 and C₆₀ doped F8 thin films exhibit similar photoconductive response and similar photoconductivity anisotropy (3-4) above 3.8 eV.     

Thin film preparation and characterization of wide band gap Cu3TaQ4 (Q = S or Se) p-type semiconductors

The structural, optical, and electronic properties of thin films of a family of wide band gap (E_g > 2.3 eV) p-type semiconductors Cu₃TaQ₄ (Q = S or Se) are presented. Thin films prepared by pulsed laser deposition of ceramic Cu₃TaQ₄ targets and ex-situ annealing of the as-deposited films in chalcogenide vapor exhibit mixed polycrystalline/[100]-directed growth on amorphous SiO₂ substrates and strong (100) preferential orientation on single-crystal yttria-stabilized zirconia substrates. Cu₃TaS₄ (E_g = 2.70 eV) thin films are transparent over the entire visible spectrum while Cu₃TaSe₄ (E_g = 2.35 eV) thin films show some absorption in the blue. Thin film solid solutions of Cu₃TaSe_4 − xS_x and Cu₃TaSe_4 − xTe_x can be prepared by annealing Cu₃TaSe₄ films in a mixed chalcogenide vapor. Powders and thin films of Cu₃TaS₄ exhibit visible photoluminescence when illuminated by UV light.     

Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD

ZnO thin films were grown at a reduced growth temperature on a Si substrate by low-pressure metalorganic chemical vapor deposition. The effects of the reactor pressures and the formation of micro-hillocks on the characteristics of the film were investigated. The ZnO films grown at 210 °C showed mass-transport limited growth behavior and a faceted surface morphology. It was found that the effect of the micro-hillocks on the structural, optical, and electrical properties can be ignored. While the sample grown at 10 Torr showed transparent conductive oxide properties, the sample grown at 3 Torr showed suitable characteristics for use as an ultraviolet emitter.     

Co-emission of UV, violet and green photoluminescence of ZnO/TiO2 thin film

ZnO/TiO₂ thin films were fabricated on quartz glass substrates by E-beam evaporation. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman spectra, optical transmittance and photoluminescence. XRD analysis indicates that the TiO₂ buffer layer can increase the preferential orientation along the (002) plane of the ZnO film. PL measurements suggest that co-emission of strong UV peak at 378 nm, violet peak at 423 nm and weak green luminescence at 544 nm is observed in the ZnO/TiO₂ thin film. The violet luminescence emission at 423 nm is attributed to the interface trap in the ZnO film grain boundaries.     

Fabrication of Al and large radii mismatch As codoped p-ZnO thin film and homojunction

We report Al³⁺ and large radii mismatched As⁵⁺ codoped p-ZnO thin films by As back diffusion from GaAs substrate and sputtering Al₂O₃ (1, 2 and 4 at%) mixed ZnO target. Hall effect measurements showed that the hole concentration increased upon codoping (As⁵⁺ and Al³⁺) compared to the monodoped (As⁵⁺) film. Also, it showed that 1 at% Al doped ZnO:As has low resistivity with high hole concentration due to best codoping. The crystallinity of the films has been studied by X-ray diffraction. The p-type formation mechanism has been investigated by X-ray photoelectron spectroscopy and low temperature photoluminescence analysis. It implies that As⁵⁺ substitutes on Zn²⁺ instead on O^2 − site that leads to the formation of (As_Zn-2V_Zn) complex which gives rise to p-conductivity. Further, the fabricated p-n homojunction using best codoped p-ZnO film shows typical rectifying characteristics of a diode.     

Development of nanostructured ZnO thin film sensor for NO2 detection

In this work, we report on the performance of a NO₂ sensor based on nanocrystalline zinc oxide (ZnO) operating at 200°C. The sensor was fabricated using spin coating technique on glass substrates. ZnO film was characterised for their structural as well as surface morphologies and NO₂ response was studied. The XRD analysis showed formation of nanocrystalline ZnO. Morphological analysis using SEM revealed formation of a diffusion free surface. The ZnO film showed selectivity for NO₂ over methanol compared to ethanol, H₂S, Cl₂ and NH₃ (S_NO2 /S_CH3OH?=?18.6, S_NO2 /S_C2H5OH?=?12.4, S_NO2 /S_Cl2 ?=?9.3, S_NO2 /S_H2S?=?3.32 and S_NO2 /S_NH3 ?=?5.32). The maximum NO₂ response of 37.2% with 78% stability for the film annealed at 700°C at gas concentration of 100?ppm at 200°C operating temperature was achieved.     

Fabrication and photocatalytic property of ZnO nanorod arrays on Cu2O thin film

ZnO nanorod arrays were fabricated on Cu₂O thin film by a simple low-temperature liquid-phase-deposition method. The samples were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM). The UV-Vis spectroscopy showed that the obtained sample was able to absorb a large part of visible light (up to 650 nm). Their photocatalytic activities were investigated by degradation of dye methylene blue (MB) under UV-Vis and visible light irradiation. It was found that the photocatalytic activity of the ZnO/Cu₂O NRs was higher than the ZnO/ZnO NRs under UV-Vis light. In a word, Cu₂O played an important role in enhancing the photocatalytic activity of the ZnO/Cu₂O NRs.     

Optical, electrical and structural characteristics of Al:ZnO thin films with various thicknesses deposited by DC sputtering at room temperature and annealed in air or vacuum

Transparent and conductive Al-doped ZnO (AZO) films have been grown with various thicknesses between 0.3 and 1.1 μm by magnetron sputtering at room temperature onto soda lime glass substrates. After deposition, the samples have been annealed at temperatures ranging from 150 to 450 °C in air or vacuum. The optical, electrical, and structural characteristics of the AZO coatings have been analyzed as a function of the film thickness and the annealing parameters by spectrophotometry, Hall effect measurements, and X-ray diffraction. As-grown layers are found polycrystalline, with hexagonal structure that shows some elongation of the unit cells along the c-axis, having visible transmittance ∼85-90% and resistivity ∼1.6-2.0 mΩ cm, both parameters slightly decreasing when the film thickness increases. Heating in air or vacuum produces further elongation of the crystalline lattice together with some increase of the visible transmittance and a decrease of the electrical resistance that depends on the heating temperature and atmosphere. The best characteristics have been obtained after treatment in vacuum at 350 °C, where the highest carrier concentrations are achieved, giving visible transmittance ∼90-95% and resistivity ∼0.8-0.9 mΩ cm for the AZO layers with various thicknesses. Some relationships between the analyzed properties have been established, showing the dependence of the lattice distortion, the band gap energy and the mobility on the carrier concentration.     

Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer

Metal-insulator-semiconductor capacitors were fabricated with sputtered ZnO and atomic layer deposited HfO₂ as the semiconductor and gate dielectric layers, respectively. From the capacitance-voltage measurements, it was confirmed that pre-deposition annealing of the sputtered ZnO layer at 300 °C in air greatly decreased the interfacial trap density (∼ 2 × 10¹² cm^− 2 eV^− 1). X-ray photoelectron spectroscopy showed a decrease in the OH bonds adsorbed on the ZnO surface after pre-deposition annealing, which improved the interface property. A very small capacitance equivalent thickness of 1.3 nm was achieved, which decreased the operation voltage (< 5 V) of the device significantly.     

Temperature and spectral dependences of persistent photoconductivity in YBa2Cu3Ox thin films

Temperature and spectral dependences of photoinduced changes of resistance were measured in YBa₂Cu₃O _x thin films with oxygen content ranging as 6.35 <x < 6.75. The absolute value of efficiency of initiation of photoinduced changes decreases with increase in oxygen content, but the position of peaks in the spectral dependence does not change with a change ofx. Temperature dependences of efficiency have an anomaly atT220 K, which is present in all the samples studied, and correlates with anomalies observed by other experimental techniques. Qualitatively similar temperature and spectral dependences of efficiency for the samples in both the insulating and metallic phases may be considered as an indication that the persistent photoconductivity effect in YBCO on both sides of the metal-insulator transition has a common origin.     

Preparation and investigation of VOx thin films of n- and p-types

In this work we present first results on the synthesis of vanadium oxide semi-transparent conducting thin films of p- and n-types. The films were deposited by thermal evaporation method in vacuum, on: silicon, glass, sapphire, and gold substrates. Temperature of substrate during deposition was set around 250 °C. As deposited films were of a p-type of conductivity. Thermal annealing at 420 °C of as-deposited films in air at atmospheric pressure resulted in a change in the conductivity type.Optical, electrical and thermal properties of the deposited films were studied. The topography of the films was studied using AFM microscope. P-N structures were created using VO_x films on silicon and glass substrates. Electrical measurements had shown a non-linear behaviour of the samples.     

Optimization of sputtering parameters for deposition of Al-doped ZnO films by rf magnetron sputtering in Ar + H2 ambient at room temperature

The effects of sputtering pressure and power on structural and optical-electrical properties of Al-doped ZnO films were systemically investigated at substrate temperature of room temperature and H₂/(Ar + H₂) flow ratio of 5%. The results show that carrier concentration and mobility of the films show nonmonotone change due to the evolution of microstructure and lattice defect of the films caused by introduction of H₂ with increasing sputtering pressure and power. The transmittance of the films is also found to be related to the introduction of H₂ in addition to usually considered surface roughness and crystallinity. Finally, optimized sputtering pressure and power are 0.8 Pa and 100 W, respectively, and obtained minimum resistivity and highest transmittance are 1.43 × 10^− 3 Ω·cm and 90.5%, respectively. In addition, it is found that E_g of the films is mainly controlled by the carrier concentration, but crystallite size and stress should also be considered for the films deposited at different powers.