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Nisar Ahmed Muhammad Azhar Iqbal Zuhair Subhani Khan Ahmed Abdul Qayyum 《Journal of Electronic Materials》2020,49(7):4221-4230
The main challenge in the deposition of molybdenum thin films for high efficiency in copper indium gallium selenide (CIGS) modules lies in gaining an adherent coating without compromising conductivity and reflectance characteristics. In this study, Mo thin films were deposited on soda-lime glass by DC magnetron sputtering at different deposition power (55, 100, 200 and 300 W) and with high working gas pressure (2 and 4 Pa). Analytical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall effect were employed to analyze the structure, morphology and electrical resistivity of the deposited films. Ultraviolet–visible (UV–Vis) spectrometry was performed to measure the reflectance and a cross-hatch adhesion tape test was employed to determine the adhesion behavior of deposited films. With higher sputtering power and reduced gas pressure, an increase in the crystallite size of the deposited films was observed. Films deposited at higher gas pressure were found with tensile stresses and higher adhesion with the substrate. The van der Pauw method reveals an increase in conductivity at high power and low gas pressure. Improved reflectance was achieved at moderate sputtering power and low gas pressure. 相似文献
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Sputter deposited molybdenum (Mo) thin films are used as back contact layer for Cu(In1−xGax)(Se1−ySy)2 based thin film solar cells. Desirable properties of Mo films include chemical and mechanical inertness during the deposition process, high conductivity, appropriate thermal expansion coefficient with contact layers and a low contact resistance with the absorber layer. Mo films were deposited over soda-lime glass substrates using DC-plasma magnetron sputtering technique. A 23 full factorial design was made to investigate the effect of applied power, chamber pressure, and substrate temperature on structural, morphological, and electrical properties of the films. All the films were of submicron thickness with growth rates in the range of 34–82 nm/min and either voided columnar or dense growth morphology. Atomic force microscope studies revealed very smooth surface topography with average surface roughness values of upto 17 nm. X-ray diffraction studies indicated, all the films to be monocrystalline with (001) orientation and crystallite size in the range of 4.6–21 nm. The films exhibited varying degrees of compressive or tensile residual stresses when produced at low or high chamber pressure. Low pressure synthesis resulted in film buckling and cracking due to poor interfacial strength as characterized by failure during the tape test. Measurement of electrical resistivity for all the films yielded a minimum value of 42 μΩ cm for Mo films deposited at 200 W DC power. 相似文献
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The role of deposition rate in the structural,optical and electrical properties of SnO2 thin films deposited by electron beam evaporation method is investigated by varying the deposition powers viz.50,75,and 100 W.The structural characterization of the films is done by X-ray diffraction (XRD) technique.The surface morphology of the films is studied by scanning electron microscopy (SEM).Rutherford back scattering (RBS) measurements revealed the thickness of the films ranging from 200 nm to 400 and also a change in the concentration of oxygen vacancies which is found to be the maximum in the film deposited at the lowest deposition rate.Optical absorption spectrum is recorded using the UV-V is spectroscopy and the films are found to be transparent in nature.A shift in the absorption edge is observed and is attributed to a different level of allowed energy states in conduction band minimum.The Hall effect and electrical measurements show a variation in the carrier concentrations,mobility and resistivity of the films.In order to explore a better compromise in electrical and optical properties for transparent electrode applications,skin depths calculations are also done to find the optimized values of carrier concentration and mobility. 相似文献
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F. Chu Q. X. Jia G. Landrum X. D. Wu M. Hawley T. E. Mitchell 《Journal of Electronic Materials》1996,25(11):1754-1759
Conductive SrRuO3 thin films have been deposited using pulsed laser deposition on LaA103 substrates at different substrate temperatures. Structural and microstructural properties of the SrRuO3/LaAlO3 system have been studied using x-ray diffraction, scanning electron microscopy, and scanning tunneling microscopy. Electrical
properties of SrRuO3 thin films have been measured. It was found that the film deposited at 250°C is amorphous, showing semiconductor-like temperature
dependence of electrical conductivity. The film deposited at 425°C is crystalline with very fine grain size (100∼200?), showing
both metallic and semiconductor-like temperature dependence of electrical conductivity in different temperature regions. The
film deposited at 775°C shows a resistivity of 280 μΩ.cm at room temperature and a residual resistivity ratio of 8.4. Optimized
deposition conditions to grow SrRuO3 thin films on LaA103 substrates have been found. Possible engineering applications of SrRuO3 thin films deposited at different temperatures are discussed. Bulk and surface electronic structures of SrRuO3 are calculated using a semi-empirical valence electron linear combination of atomic orbitals approach. The theoretical calculation
results are employed to understand the electrical properties of SrRuO3 thin films. 相似文献
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用射频(RF)溅射法在镀LaNiO3(LNO)底电极的Si片上沉积PbZr0.52 Ti0.48 O3(PZT)铁电薄膜,沉积过程中基底温度为370℃,然后在大气环境中对沉积的PZT薄膜样品进行快速热退火处理(650℃,5min).用电感耦合等离子体发射光谱(ICP-AES)测量其组分,X射线衍射(XRD)分析PZT薄膜的结晶结构和取向,扫描电子显微镜(SEM)分析薄膜的表面形貌和微结果,RT66A标准铁电综合测试系统分析Pt/PZT/LNO电容器的铁电与介电特性,结果表明,PZT薄膜的组分、结构和性能都与溅射沉积功率有关. 相似文献
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The influence of radio frequency(RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide(a-IGZO) thin films and the related thin-film transistor(TFT) devices is investigated comprehensively.A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined.The results prove that the deposition rate sensitively depends on RF power.In addition,the carrier concentration increases from 0.91 x 1019 to 2.15 x 1019 cm-3 with the RF power rising from 40 to 80 W,which may account for the corresponding decrease in the resistivity of the a-IGZO thin films.No evident impacts of RF power are observed on the surface roughness,crystalline nature and stoichiometry of the a-IGZO samples.On the other hand,optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W,as is supposed to result from the carrierinduced band-filling effect.The rise in RF power can also affect the performance of a-IGZO TFTs,in particular by increasing the field-effect mobility clearly,which is assumed to be due to the alteration of the extended states in a-IGZO thin films. 相似文献
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WZO薄膜生长及氧流量对其特性的影响 总被引:1,自引:1,他引:0
采用直流脉冲反应磁控溅射方法生长W掺杂ZnO(ZnO:W,即WZO)透明导电氧化物(TCO)薄膜并研究了氧气流量对薄膜微观结构、组分、表面形貌以及光电性能的影响。实验结果表明,WZO薄膜具有良好的(002)晶面择优取向生长,且适当的氧气流量是制备优质WZO薄膜的关键因素。WZO薄膜表面形貌受薄膜结晶质量的影响。当氧气流量为2.08×10-7 m3/s时,WZO薄膜在400~1 500nm透过率达到84.5%,电阻率为4.61×10-3Ω.cm,迁移率为20.5cm2v-1s-1。XPS测试表明WZO薄膜中Zn和W均处于氧化态,其中W元素呈现W6+价态。 相似文献
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利用激光化学气相沉积(LCVD)方法,以钛金属有机化合物为前驱体,以O2为反应气体,在激光功率PL为0~200 w、基板预热温度为400~700℃的条件下,制备出了金红石型TiO2薄膜和金红石型与锐钛矿型混合TiO2薄膜.研究表明,激光功率和基板预热温度对所沉积的TiO2薄膜的物相组成、截面组织,表面形貌和薄膜生长速度均有着显著的影响. 相似文献
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Effects of Stress and Morphology on the Resistivity and Critical Temperature of Room-Temperature-Sputtered Mo Thin Films 总被引:1,自引:0,他引:1
《Applied Superconductivity, IEEE Transactions on》2009,19(6):3779-3785
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A Taguchi experimental design was used to find which deposition parameter has the most dominant effect on the electrical resistivity of molybdenum (Mo) films. Based on the most important parameter, the Mo films were further characterized by structural, electrical, and adhesive methods. Then, a copper indium gallium selenide (CIGS) thin film was fabricated by a two-stage process on the obtained Mo layer. The results show that working pressure had a dominant effect on electrical resistivity. The Mo films deposited at 1 mTorr and 2 mTorr exhibited compressive strain and dense polycrystalline microstructure, whereas those deposited at 3 mTorr and 4 mTorr exhibited tensile strain and an elongated grain with open boundaries. A Mo film with open porous structure, tensile strain, and lower resistivity was suitable for the formation of CIGS films. After selenization at 560°C, a single-phase chalcopyrite CIGS film with a layer of MoSe2 at the Mo/CIGS interface was obtained. 相似文献
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退火温度对ZnO掺杂ITO薄膜性能的影响 总被引:2,自引:2,他引:0
利用电子束蒸镀方法,在K8玻璃衬底上沉积ZnO掺杂ITO(ZnO-ITO)与ITO薄膜。研究不同退火温度对ZnO-ITO薄膜的微观结构的影响;对比分析了在不同退火温度条件下,ZnO-ITO和无掺杂ITO薄膜的光电性能。结果发现,ZnO-ITO薄膜具有较大的晶粒尺寸,随着退火温度的上升,晶体结构得到改善,表面粗糙度减小,薄膜的光电性能显著提高。ZnO-ITO薄膜经过500℃退火后得到最佳的综合性能,其表面均方根粗糙度(RMS)为32.52nm,电阻率为1.43×10-4Ω.cm;对442nm波长的光,透射率可达98.37%;与ITO薄膜相比,ZnO-ITO薄膜具有显著的抗PEDOT:PSS溶液腐蚀的能力。 相似文献
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Guang-Xing Liang Ping Fan Xing-Min Cai Dong-Ping Zhang Zhuang-Hao Zheng 《Journal of Electronic Materials》2011,40(3):267-273
To evaluate the influence of film thickness on the structural, electrical, and optical properties of Al-doped ZnO (AZO) films,
a set of polycrystalline AZO samples with different thickness were deposited on glass substrates by ion-beam sputtering deposition
(IBSD). X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive x-ray spectroscopy (EDS), four-point probe
measurements, and spectrophotometry were used to characterize the films. XRD showed that all the AZO films had preferred c-axis orientation. The ZnO (110) peak appeared, and the intensity increased, with increasing thickness. All the samples exhibited
compressive intrinsic stresses. AFM showed that the grain size along with the root-mean-square (RMS) roughness increased with
increasing thickness. The decrease of resistivity is due to the corresponding change in grain size, surface morphology, and
chemical composition. The average optical transmittance of the AZO films was over 80%, and a sharp fundamental absorption
edge with red-shifting was observed in the visible region. The optical band gap decreased from 3.95 eV to 3.80 eV when the
AZO film thickness increased from 100 nm to 500 nm. 相似文献
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Silver telluride thin films of thickness 50 nm have been deposited at different deposition rates on glass substrates at room temperature and at a pressure of 2×10−5 mbar. The electrical resistivity was measured in the temperature range 300–430 K. The temperature dependence of the electrical resistance of Ag2Te thin films shows structural phase transition and coexistence of low temperature monoclinic phase and high temperature cubic phase. The effect of deposition rate on the phase transition and the electrical resistivity of silver telluride thin films in relation to carrier concentration and mobility are discussed. 相似文献
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L. Castañeda A. Maldonado A. Escobedo-Morales M. Avendaño-Alejo H. Gómez J. Vega-Pérez M. de la L. Olvera 《Materials Science in Semiconductor Processing》2011,14(2):114-119
Indium doped zinc oxide (ZnO:In) thin solid films were deposited on soda-lime glass substrates by the ultrasonic spray pyrolysis technique. The effect of the substrate temperature on the electrical, morphology, and optical characteristics of ZnO:In thin films was studied. It was found that, as the substrate temperature increases, the electrical resistivity decreases, reaching a minimum value in the order of 7.3×10−3 Ω cm, at 415 °C. Further increase in the substrate temperature results on an increment on the electrical resistivity of the thin solid films. All the samples were polycrystalline with a well-defined wurtzite structure. The preferred growth shows a switching from a random orientation at low substrates temperatures to (0 0 2) in the case of films deposited at the highest substrate temperature used. As the substrate temperature increases, the corresponding surface morphology changes from an almost faceted pyramidal to round-shaped form. The optical transmittance of the films in a interval of 400 to 700 nm is around 70%, with a band gap value in the order of 3.45 eV. 相似文献