A 0.18 μm CMOS 3-5 GHz broadband flat gain low noise amplifier

A 3-5 GHz broadband flat gain differential low noise amplifier(LNA) is designed for the impulse radio ultra-wideband(IR-UWB) system.The gain-flatten technique is adopted in this UWB LNA.Serial and shunt peaking techniques are used to achieve broadband input matching and large gain-bandwidth product(GBW).Feedback networks are introduced to further extend the bandwidth and diminish the gain fluctuations.The prototype is fabricated in the SMIC 0.18μm RF CMOS process.Measurement results show a 3-dB gain band...     

Design of a 0.18μm CMOS multi-band compatible low power GNSS receiver RF frontend

This paper presents the design and implementation of a fully integrated multi-band RF receiver frontend for GNSS applications on L-band.A single RF signal channel with a low-IF architecture is adopted for multi-band operation on the RF section,which mainly consists of a low noise amplifier(LNA),a down-converter,polyphase filters and summing circuits.An improved cascode source degenerated LNA with a multi-band shared off-chip matching network and band switches is implemented in the first amplifying stage....     

A 5-GHz programmable frequency divider in 0.18-μm CMOS technology

正A 5-GHz CMOS programmable frequency divider whose modulus can be varied from 2403 to 2480 for 2.4-GHz ZigBee applications is presented.The divider based on a dual-modulus prescaler(DMP) and pulse-swallow counter is designed to reduce power consumption and chip area.Implemented in the 0.18-μm mixed-signal CMOS process,the divider operates over a wide range of 1-7.4 GHz with an input signal of 7.5 dBm;the programmable divider output phase noise is -125.3 dBc/Hz at an offset of 100 kHz.The core circuit without test buffer consumes 4.3 mA current from a 1.8 V power supply and occupies a chip area of approximately 0.015 mm~2.The experimental results indicate that the programmable divider works well for its application in frequency synthesizers.     

一种0.13 μm CMOS K波段LNA

基于0.13 μm CMOS工艺,设计了一种工作于K波段的低噪声放大器。输入匹配采用一种改良π型匹配网络,输出匹配采用L+π型匹配网络,避免了电容击穿的风险和源端大电感的引入。电路使用级间L型匹配的方式,利用第一级电路的输出寄生电容和第二级电路的输入寄生电容,有效地提高了电路的增益,降低了噪声。仿真结果表明,该低噪声放大电路为单电源1.5 V供电,在27 GHz频率处的增益为27 dB,噪声系数为3.75 dB,输入回波损耗和输出回波损耗分别为－11.1 dB和－20.5 dB。     

A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

This paper presents a millimeter wave （mm-wave） oscillator that generates signal at 36.56 GHz. The ram-wave oscillator is realized in a UMC 0.18 μm CMOS process. The linear superposition （LS） technique breaks through the limit of cut-off frequency （JET）, and realizes a much higher oscillation than Jr. Measurement results show that the LS oscillator produces a calibrated 37.17 dBm output power when biased at 1.8 V; the output power of fundamental signal is -10.85 dBm after calibration. The measured phase noise at 1 MHz frequency offset is -112.54 dBc/Hz at the frequency of 9.14 GHz. This circuit can be properly applied to mm-wave communication systems with advantages of low cost and high integration density.     

一种用于低中频GPS接收机的CMOS可编程放大器

介绍了一种应用于低中频GPS接收机的CMOS可编程放大器.该放大器通过采用基于差分对简并电路的线性化技术,实现了以6dB为步长的96dB数控增益范围,同时利用工作在亚域值区工作的晶体管代替电阻用于直流偏移校正模块当中有效地节约了芯片面积,仿真结果表明其带宽为300MHz,最大增益时其噪声指数为23.7dB,ⅡP3在最低增益时达到-5dBm,全局增益误差为0.03dB.设计采用了0.18μmCMOS数模混合工艺库实现,面积约为0.097mm2,在1.8V供电电压下,功耗为6.3mW.     

Method of simulation of low dose rate for total dose effect in 0.18 μm CMOS technology

Three methods for simulating low dose rate irradiation are presented and experimentally verified by using 0.18 μm CMOS transistors.The results show that it is the best way to use a series of high dose rate irradiations, with 100 °C annealing steps in-between irradiation steps, to simulate a continuous low dose rate irradiation.This approach can reduce the low dose rate testing time by as much as a factor of 45 with respect to the actual 0.5 rad（Si）/s dose rate irradiation.The procedure also provides detailed information on the behavior of the test devices in a low dose rate environment.     

一种用于超宽带接收机的CMOS可变增益低噪声放大器

本文介绍一种符合中国超宽带应用标准的工作频率范围为4.2-4.8 GHz的CMOS可变增益低噪声放大器(LNA)。文章主要描述了LNA宽带输入匹配的设计方法和低噪声性能的实现方式,提出一种3位可编程增益控制电路实现可变增益控制。该设计采用0.13-μm RF CMOS工艺流片,带有ESD引脚的芯片总面积为0.9平方毫米。使用1.2 V直流供电,芯片共消耗18 mA电流。测试结果表明,LNA最小噪声系数为2.3 dB,S(1,1)小于-9 dB,S(2,2)小于-10 dB。最大和最小功率增益分别为28.5 dB和16 dB,共设有4档可变增益,每档幅度为4 dB。同时,输入1 dB压缩点是-10 dBm,输入三阶交调为-2 dBm。     

A 4224 MHz low jitter phase-locked loop in 0.13-μm CMOS technology

A 4224 MHz phase-locked loop(PLL) is implemented in 0.13μm CMOS technology.A dynamic phase frequency detector is employed to shorten the delay reset time so as to minimize the noise introduced by the charge pump.Dynamic mismatch of charge pump is considered.By balancing the switch signals of the charge pump,a good dynamic matching characteristic is achieved.A high-speed digital frequency divider with balanced input load is also designed to improve in-band phase noise performance.The 4224 MHz PLL achieves...     

Design of a high-order single-loop Σ△ ADC followed by a decimator in 0.18μm CMOS technology

This work presents an oversampled high-order single-loop single-bit sigma–delta analog-to-digital converter followed by a multi-stage decimation filter.Design details and measurement results for the whole chip are presented for a TSMC 0.18μm CMOS implementation to achieve virtually ideal 16-b performance over a baseband of 640 kHz.The modulator in this work is a fully differential circuit that operates from a single 1.8 V power supply. With an oversampling ratio of 64 and a clock rate of 81.92 MHz,the modulator achieves a 94 dB dynamic range. The decimator achieves a pass-band ripple of less than 0.01 dB,a stop-band attenuation of 80 dB and a transition band from 640 to 740 kHz.The whole chip consumes only 56 mW for a 1.28 MHz output rate and occupies a die area of 1×2 mm^2.     

Design and implementation of an IEEE 802.11 baseband OFDM transceiver in 0.18 μm CMOS

An SISO IEEE 802.11 baseband OFDM transceiver ASIC is implemented.The chip can support all of the SISO IEEE 802.11 work modes by optimizing the key module and sharing the module between the transmitter and receiver.The area and power are decreased greatly compared with other designs.The baseband prototype has been verified under the WLAN baseband test equipment and through transferring the video.The 0.18μm 1P/6M CMOS technology layout is finished and the chip is fabricated in SMIC,which occupies a 2.6×2.6 mm~2 area and consumes 83 mW under typical work modes.     

A 2.5-Gb/s fully-integrated,low-power clock and recovery circuit in 0.18-μm CMOS

Based on the devised system-level design methodology,a 2.5-Gb/s monolithic bang-bang phase-locked clock and data recovery(CDR) circuit has been designed and fabricated in SMIC's 0.18-μm CMOS technology.The Pottb(a|¨)cker phase frequency detector and a differential 4-stage inductorless ring VCO are adopted,where an additional current source is added to the VCO cell to improve the linearity of the VCO characteristic.The CDR has an active area of 340×440μm~2,and consumes a power of only about 60 mW from a 1...     

0.18μm CMOS宽带镜像抑制混频器的设计

采用TSMC 0.18 μm CMOS工艺,设计了一种位于3.0~3.4 GHz之间,用于雷达接收机前端的宽带镜像抑制混频器.整个混频器包含3个多相滤波器,1个本振缓冲放大器,4个核心Gilbert混频器单元.通过ADS2003仿真,镜像抑制度为60 dB,达到预期结果.利用设计出的宽带镜像抑制混频器,可以直接和低噪声放大器组成接收前端电路,避免片外滤波器的使用,大大提高了集成度.     

0.18μm数字CMOS工艺下的高增益运算放大器设计

基于SMIC 0.18μm数字CMOS工艺,设计了一种基于增益增强技术的折叠式共源共栅运算放大器,并采用衬底校准技术增大了运放的输入摆幅,可用于13位30MHz采样频率的流水线模数转换器,分析了受流水线性能限制的运放性能.仿真结果表明运放在1V的输入摆幅下开环增益大于100dB,8.5pF负载电容下单位增益带宽为322MHz,功耗仅为1.9mW.