Gd3-xZnxAl2系合金磁热效应的直接测量

用真空高频磁悬浮炉制备了Gd3Al2、Gd2.9Zn0.1Al2、Gd2.7Zn0.3Al2、Gd2.4Zn0.6Al2四种合金.用直接测量法测量了在1.5T磁场下这四种合金的磁热效应.结果表明,在1.5T磁场下,Gd3Al2、Gd2.9Zn0.1Al2、Gd2.7Zn0.3Al2、Gd2.4Zn0.6Al2的最大绝对温变分别为2.0K、1.4 K、1.1K和0.7K;当Zn含量为0.1时,居里温度为287K.     

直接测量(Nd1-xCex)2Fe17化合物的磁热效应

用真空高频悬浮炉在氩气保护下熔炼了(Nd1-xCex)2Fe17系材料(x=0.32,0.41,0.60).通过x射线衍射对退火前后的样品进行相结构分析.在磁场H=1.5T条件下,用永磁式室温磁热效应测量仪和VSM直接测量了三个样品的绝热温变 ΔTad及测量并计算了Nd1.18Ce0.82Fe17样品的ΔSm.随着Nd含量的增加,(Nd1-xCex)2Fe17系合金的磁相变温度显著提高,同时,绝热温变ΔTad略有增加,有望成为具有实用价值的室温磁制冷材料.     

磁热效应的直接测量与测量仪器

探讨了磁热效应的两种测量方法———直接测量和间接测量,阐述了这两种测量方法的特点。间接测量需要测量一系列等温磁化曲线和热容,测量时间长,费用昂贵;直接测量是测量样品的绝热温变,简单、方便。研制了室温磁热效应直接测量仪,该测量仪采用NdFeB永磁体作为磁场系统;用该仪器直接测量了室温磁致冷材料在不同温度下的绝热温变,为研究室温磁致冷材料的磁热效应提供了一种简捷、方便的测量仪器。     

新型室温磁热效应直接测量仪研制

采用冷阱技术、高精度温度传感器与高精度测量仪表、制冷/制热功率连续调节技术以及磁场系统可更换方式研制了一台新型室温磁热效应测量仪。该测量仪具有测温温域宽、测温精度高、控温平稳、磁场系统可更换等优点。测量范围-50～70℃,测量精度达到0.01℃,磁场系统为0.8～1.8 T可更换。可用于室温磁制冷材料性能基础研究工作和磁制冷工质的选用。     

室温磁热效应直接测量仪的研制

简单介绍了室温磁热效应测量仪的工作原理及组成,并且测量了Gd样品的磁热效应T-△Tad曲线,该仪器具有操作简单方便、测量费用低廉等优点,它可以作为室温磁制冷材料研究的重要测量手段,同时也可以解决目前磁制冷材料普遍只研究等温磁熵变的不足的问题.     

Dy对Gd磁热效应的影响

通过对Gd及不同配比的Gd-Dy合金的X射线衍射分析和磁热效应T-ΔTad曲线测量结果的分析表明,Dy的添加没有改变Gd的晶体结构,而使其居里温度和磁热效应发生有规律的改变.     

室温磁热效应直接测量仪的误差分析

简单介绍了室温磁热效应测量仪的组成、工作原理及其优点;用金属G d作为标准样品,用两个不同尺寸的温度传感器,测量了两个大小不同的样品。结果表明,相同条件下测量的数据重复性很好,而不同条件下测量的数据有一些差别,对此进行了分析,发现测量样品时特别是样品较小时,温度传感器的热容以及绝热条件等因素是引起误差的主要原因。     

磁热效应及磁制冷材料的选择依据

从热力学基本理论出发,解释了磁制冷材料的磁热效应,并推导出等温熵变|ΔSm|和绝热温变ΔTad的基本公式,为选择合适的磁制冷材料提供了理论依据.     

钒合金化对Gd5Si2Ge2巨磁热效应合金结构和性能的影响

Gd5Si2Ge2合金的发现为常温范围磁制冷实用化发展提供了可能,然而其居里温度有待进一步提高。本文就添加钒进行合金化对它的改性作用开展了初步研究。结果表明:Gd5(Si2-xGe2-xV2x)合金(x≤0.03)能保持母相Gd5Si2Ge2的晶体结构,但显微组织却随钒的加入而发生显著改变;钒合金化使合金居里温度由～3℃提高到～18℃,同时磁化强度水平升高,居里点附近磁化强度变化陡度增大。     

磁热效应合金Gd5(Ge1-xMx)4的结构

用磁控电弧炉在氩气气氛中熔炼了Gd5(Ge1-xMx)4(M=Mo、Al、Cr和Ga)系列合金。对样品的结构、显微组织和磁热性能进行了研究,研究发现随着M元素含量的增加,晶体结构会发生由5∶4型正交结构→5∶2∶2型单斜结构→5∶4型正交结构的转变,晶态组织出现非共晶→共晶→非共晶的转变,样品的磁热效应会随着M元素的含量增大而增大。     

Gd3-xMnxAl2系合金的晶体结构和磁熵研究

采用真空高频磁悬浮炉制备出一系列的Gd3-xMnxAl2(x=0,0.1,0.2,0.3)合金。通过Mn对Gd的部分替代,研究了Mn元素微量替代对Gd3Al2合金结构和磁熵的影响。实验结果表明,Gd3-xMnxAl2系合金的结构与Gd3Al2相同;随着Mn含量的增加,Gd3-xMnxAl2系合金的居里温度和磁熵发生了变化。说明Mn对Gd的部分替代改变了Gd3Al2合金的磁热效应。     

氧化钆对钛酸钡陶瓷结构和介电性能的影响

采用固相法制备得到了掺杂 1% (mol) Gd2 O3的钛酸钡陶瓷 ,并通过 X射线衍射分析和扫描电镜对其结构进行了表征。对其介电常数、介电损耗和室温电阻率进行了测定 ,结果表明 Gd2 O3掺杂 Ba Ti O3陶瓷的介电常数明显增加 ,介电损耗也有所升高 ,室温电阻率明显降低     

Magnetocaloric Properties of （Gd1-x Tbx ）3 Al2 Compounds Near Room Temperature

Recentlytherehasbeenaninterestinmagneticrefrigerationstudiesduetoitspotentialasanenergysavingtechnology[1～ 5] .Theefficiencyofmagneticre frigerationcriticallydependuponmagneticrefriger ants .Forthebestrefrigerantperformance ,verylargeisothermalmagneticentropychangeΔSisrequired ,andthemaximumvalueofΔSmustexistoverawiderrangeoftemperatures[2 ] .Recentdiscoveryofgiantmagnetocaloriceffect(MCE)ΔSinfirst ordertransi tionmaterialsgivesfurtherimpulsetowardsthedevel opmentofbothnewmaterialsandmag…     

Influence of the Erbium Substitution for Gd in Gd5Si1.8Ge2.2Alloys on the Magnetocaloric Effect in Low-Field

The phases and magnetocaloric effect in the alloys (Gd1-xErx)5Si1.8Ge2.2 with x=0,0.1,0.2 and 0.3 were investigated by X-ray diffraction analysis and magnetization measurement. The samples were single phase with the monoclinic Gd5Si2Ge2-type structure. With the increase of Er content, the Curie temperature (Tc) decreased obviously from 253K of the alloy with x=0 to 114K with x=0.3. The maximum magnetic entropy changed in the samples of (Gd1-xErx)5Si1.8Ge2.2 with x=0.0,0.1,0.2 and 0.3 were 6.88,8.32,9.59 and 10.24 J·kg-1·K-1 respectively in the applied field change of 0~2.0T.     

Gd4(BixSb1-x)3系列合金在低磁场下的磁热效应

用高频悬浮炉熔炼了Gd4(BixSb1-x)3系列合金,利用X光粉末衍射技术确定其结构。在1.3T的磁场下,利用自制的△Tad-T曲线测量仪直接测量了该系列合金的磁热效应。发现Gd4(BixSb1-x)3系列合金在低磁场下具有较大的磁热效应,通过改变Bi的含量,其居里温度在267K～332K温度之间增加,从而在一个较宽的温度范围内能获得较大的绝热温变。在对退火前后的样品进行△Tad-T测量后,发现其热稳定性很好。实验结果说明Gd4(BixSb1-x)3系列合金是一种性能良好的磁致冷材料。     

Gd3+掺杂纳米TiO2的制备及性能

采用溶胶-凝胶浸渍法制备了纯的和Gd3+掺杂的纳米TiO2,并利用XRD、UV-Vis漫反射光谱对样品进行了表征。考察了Gd3+掺杂对TiO2催化活性的影响。结果发现Gd3+的掺入阻止了TiO2由锐钛矿相向金红石相的转变,抑制了晶粒的生长。与纯TiO2相比,Gd3+掺杂的TiO2在紫外区的光吸收能力增强,TiO2催化剂光催化分解水制氢活性提高了56%。     

Preparation and Magnetism of Gd2O3/X-NBR Composites

Series of Gd2O3/X-NBR composites were prepared by in-situ reaction at different temperatures (100 and 160 ℃) and different processing time. The influence of processing time and processing temperature on dispersion of Gd2O3 was investigated, and the relationship between magnetic property and temperature was also discussed. The results show that, the mass magnetizability (χg) descends as temperature rising. Processing temperature and time do not exhibit evidenced effects on the mass magnetizability (χg). All the composites show to be antiferromagnetic.     

Vacuum ultraviolet excited photoluminescence properties of Gd2O2CO3:Eu3+ phosphor

The Gd2O2CO3:Eu3 with type-II structure phosphor was successfully synthesized via flux method at 400℃ and their photoluminescence properties in vacuum ultraviolet (VUV) region were examined. The broad and strong excitation bands in the range of 153-205 nm owing to the CO32- host absorption and charge transfer (CT) of Gd3 -O2- were observed for Gd2O2CO3:Eu3 . Under 172 nm excitation, Gd2O2CO3:Eu3 exhibited strong red emission with good color purity, indicating Eu3 ions located at low symmetry sites and the chromaticity coordination of luminescence for Gd2O2CO3:Eu3 was (x=0.652, y=0.345). The photoluminescence quenching concentration of Eu3 excited by 172 nm for Gd2O2CO3:Eu3 was about 5%. Gd2O2CO3:Eu3 would be a potential VUV-excited red phosphor applied in mercury-free fluorescent lamps.     

Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator

This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared with pure HfO2,the doped HfO2 with an optimum concentration of Gd2O3 as MOS gate dielectric exhibited a lower leakage current,thinner effective oxide thickness and less fixed oxide charges density.The result indicated that Gd2O3 doping power of 60 W exhibited the best electrical characteristics,maximum capacitance,lowest leakage current of 9.35079...