基于FET结构的Pt-LaF3混合膜溶解氧传感器

研制了一种基于FET结构的Pt-LaF3混合膜全固态溶解氧传感器.对Pt-LaF3敏感膜的敏感机制以及传感器的器件结构和响应特性进行了分析,并实际测试了器件特性,给出了在不同工作点和不同温度条件下器件的输出电压对溶解氧浓度变化的响应曲线.     

碳纳米管聚苯胺薄膜SAWSO2传感器的实验研究

以128°Y-LiNbO3晶体上实现的双声路声表面波(SAW)器件为载体,在器件的测量声路上制作了对SO2气体具有敏感作用的碳纳米管聚苯胺薄膜,提出了一种基于碳纳米管聚苯胺薄膜的SAW SO2气体传感器.该传感器中的双声路结构消除了因外界测量条件改变引起的测量误差,提高了传感器的可靠性和准确性.利用原位法制备的碳纳米管聚苯胺增加了SO2气体的吸附面积,提高了传感器的灵敏度.实验结果表明,基于碳纳米管聚苯胺薄膜的SAW SO2气体传感器在测量范围内对各种浓度的SO2气体具有好的响应特性;当输入体积分数为1×10-6时,传感器的响应灵敏度约为8.3 kHz,比单一聚苯胺薄膜高1.8 kHz.此外,该传感器也具有更好的线性特性.     

透射式电致变色器件的实验研究

本文主要介绍了一种透射式电致变色器件的结构和其基本工作原理,并对不同尺寸器件的响应特性、光学特性、存贮特性及循环寿命进行了测量和分析。     

悬浮栅结构ISFET动态特性的HSPICE仿真

通过对ISFET敏感机理的理论分析,根据表面基模型,建立了悬浮栅结构ISFET器件的HSPICE动态行为模型,对ISFET器件的动态特性进行仿真得到时间响应曲线,并探讨了薄膜等效电阻、薄膜等效电容、互连线寄生电容和寄生电阻等因素与动态特性中延迟时间和迟滞等不理想因素的关系,为ISFET/REFET差分结构集成传感器芯片设计提供理论指导。     

悬浮栅结构ISFET动态特性的HSPICE仿真

通过对ISFET敏感机理的理论分析,根据表面基模型,建立了悬浮栅结构ISFET器件的HSPICE动态行为模型,对ISFET器件的动态特性进行仿真得到时间响应曲线,并探讨了薄膜等效电阻、薄膜等效电容、互连线寄生电容和寄生电阻等因素与动态特性中延迟时间和迟滞等不理想因素的关系,为ISFET/REFET差分结构集成传感器芯片设计提供理论指导.     

F等离子体处理 AlGaN/GaN HEMT击穿电压和电流崩塌研究

F等离子体处理工艺被广泛的应用于 AlGaN/GaN HEMT增强型器件的研制和栅前处理工艺。本文研究了低功率F处理 AlGaN/GaN HEMT的击穿特性和电流崩塌特性。随着F处理时间的增加,饱和电流下降,阈值电压正向移动。对不同F处理时间的器件肖特基特性分析后发现,120s的F处理后器件栅泄漏电流明显减小,器件击穿电压提高,当F处理时间大于120s后,由于长时间F处理带来的损伤器件栅泄漏电流没有继续减小。采用不同偏置下的双脉冲测试对不同F处理时间的电流崩塌特性进行了研究,低功率F处理后没有发现明显的电流崩塌现象。     

悬梁式陶瓷微热板的设计及热性能研究

结合传统陶瓷厚膜气体传感器和硅微加工气体传感器的特点,设计了基于陶瓷基底的悬梁式微热板结构,并提出一种无内引线的封装方式。对微热板的传热过程进行分析,并通过有限元工具对具有不同结构参数器件的热特性进行模拟,得到结构参数与器件热特性间的关系。通过控制工艺参数,在Al2O3陶瓷基底上制作出性能良好的Pt加热电阻及电极,并采用激光微加工技术实际制作了梁宽为0.2 mm和0.4 mm的两种结构器件。对器件的加热功率-温度关系进行测试,0.2 mm梁结构器件在400 mW加热功率下板上平均温度约为250℃,同模拟结果一致。     

高速长波长谐振腔增强型光探测器的瞬态性能研究

基于谐振腔增强型(RCE)光探测器的实际设计和制作模型,提出了综合器件的隔离层及器件的串联电阻、结电容等参数的高速长波长RCE光探测器的瞬态响应特性的表达式,包括器件的冲击响应、阶跃响应和脉冲响应.从理论上详细地研究了高速长波长RCE光探测器的瞬态响应特性,最后给出了不同器件结构参数的计算结果.     

悬浮栅结构ISFET动态特性的HSPICE仿真

通过对ISFET敏感机理的理论分析，根据表面基模型，建立了悬浮栅结构ISFET器件的HSPICE动态行为模型，对ISFET器件的动态特性进行仿真得到时间响应曲线，并探讨了薄膜等效电阻、薄膜等效电容、互连线寄生电容和寄生电阻等因素与动态特性中延迟时间和迟滞等不理想因素的关系，为ISFET/REFET差分结构集成传感器芯片设计提供理论指导。     

三维纳米线SAW气体传感器及报警器设计

该文提出了一种全新的三维纳米线结构的声表面波(SAW)气体传感器,详细阐述了谐振型SAW器件上纳米线制备与修饰改性设计,传感器信号提取电路设计及报警器设计等过程,最后研制出气体报警器样品。并利用沙林（GB）模拟剂对传感器性能指标进行了测试,该传感器的响应阈值低达2 mg/m3,响应时间仅约为20 s。结果表明,与传统二维结构的SAW气体传感器相比,三维纳米线结构的SAW气体传感器在响应阈值和响应时间上均有很大的提高。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first