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1.
介绍了一种用于MICROMEGAS气体探测器的电荷灵敏前放ASIC设计,重点介绍了电路结构,详细分析了电荷灵敏前放的噪声.针对探测器的应用,实现了一种新型电荷灵敏前置放大芯片MMCSA的设计.MMCSA芯片采用Chartered 0.35μm工艺制作,测得的输入电荷范围为2~ 350 fC,噪声为小于1000 e-.  相似文献   

2.
介绍了开关电荷灵敏前放应用于高能X射线成像系统中的主要优点,初步分析了此类前放的主要噪声源,并实验比较了开关前放和传统电荷灵敏前放的噪声指标,结果显示开关前放的确因为去掉了反馈电阻的热噪声贡献而使并联电流噪声得以改善。  相似文献   

3.
一种低噪声快电荷灵敏前置放大器的研制   总被引:11,自引:6,他引:5  
简要介绍了新型低噪声快电荷灵敏前置放大器。这种电荷灵敏前置放大器采用新的设计方法案,该前放主要采用低噪声场效应晶体管和集成运算放大器构成,其等效输入噪声≤2.2keV。该前放具有电路结构简单、体积小、输出信号上升时间快、噪声低、稳定性好等特点。  相似文献   

4.
为满足硅微条探测器研制的需求,本文研制了一款多通道低噪声电荷灵敏前放ASIC芯片。设计完成电荷灵敏前置放大电路和极零相消电路;并分析电路的积分非线性、噪声斜率、可靠性等指标参数。该电荷灵敏前放输入动态范围20~830 f C时,等效输入噪声为685.73+32.37 e-rms/p F。  相似文献   

5.
小尺寸电荷灵敏前置放大器   总被引:2,自引:0,他引:2  
魏海鹏  廖西征  王浩  邱实 《核技术》2003,26(1):86-88
介绍了一种应用于半导体探测器的小尺寸电荷灵敏前置放大器的实例,并分析了测量其噪声的方法,给出了降低前放噪声的几种手段。  相似文献   

6.
介绍了一款新型低噪声电荷灵敏前置放大器的研制。该电荷灵敏前置放大器采用新的自主设计方案,可利用计算机的USB接口直接供电,其电子学等效输入噪声约为0.08 f C,积分非线性为1.8%。该电荷灵敏前置放大器可用于小型半导体核探测谱仪的信号读出放大。集探测器偏置高压、低压电源、电荷灵敏前放、成形电路于一体,体积小、使用方便、噪声低。  相似文献   

7.
本文介绍了一种新型专用的多路电荷灵敏前置放大器,其路数最多为八路,这种电荷灵敏置放大器采用新的设计方案,该前放主要采用低噪声场效应晶体管和集成运算放大器构成,其等效输入噪声小于等于2.2 keV。该前放具有电路结构简单、体积小、输出信号上升时间快、噪声低、稳定性好等特点。并对它的设计以及特点作了较详细的阐述。  相似文献   

8.
本文提出了一种新的电荷灵敏前放的噪声测试方法,利用数字示波器和数字滤波对信号进行采样处理.与传统模拟测量系统相比,该方法具有参数可调,方便高效的优点.试验结果与传统测试结果基本吻合.  相似文献   

9.
本文测量和分析了电荷灵敏前放A250的电子学噪声对CZT探测器能谱展宽的影响.在成形时间下1 μs下A250的零电容噪声为104.8 e,噪声电容斜率为4.18 e/pF.测得241Am 59.5 kev全能峰能量分辨率为4.08%.  相似文献   

10.
当前辐射探测应用对前端电子学的集成度要求越来越高,如何实现高密度、低成本和一定性能以及可靠的核电子学成为重要的课题。CMOS ASIC可以实现低成本和用户定制,成为核电子学专用集成电路的主要工艺,采用无锡华润0.6μm CMOS工艺完成了低噪声CMOS电荷灵敏前放的第一次原型设计。  相似文献   

11.
CdTe and CdZnTe X-ray detector arrays for imaging and spectroscopy provide low capacitance current sources with low leakage currents. The optimal shaping time for low-noise operation is relatively high in CMOS analog channels that provide the readout for these detectors. The shaper is centered at lower frequencies, and thus the 1/f noise from the electronics is the main noise source that limits the resolution of the channel. The optimal dimensions of the input stage MOSFET are determined by this noise. In this paper a design criterion for the optimization of the resolution and the power consumption in a 1/f noise dominated readout is introduced. A readout based on CMOS switched charge sensitive preamplifier without feedback resistor has been designed and fabricated in the CMOS 2-μ low-noise analog process provided by MOSIS. This design provides high sensitivity and the possibility to integrate a large number of channels with low power consumption. Measurements of the performance of a first prototype chip are presented  相似文献   

12.
In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94Ω and the linearity almost good.  相似文献   

13.
在台湾中微子实验项目先期研究中,用硅光电二极管测读中微子作用于CsI(Tl)晶体的光谱信号,介绍了结合硅光电二极管设计制作低噪声高分辨率电荷灵敏前置放大器的实验研究及其结果的能谱响应特性。  相似文献   

14.
The need for compact, fast, low-noise front-end electronics in high resolution positron emission tomography (PET) has prompted this effort to design a preamplifier suitable for avalanche photodiode-based scintillation detectors. Due to the small signals from the detectors (< .03 pC/MeV), a preamplifier with ultra-low noise performance in the 5 to 20 MHz range is essential to achieve the timing resolution required by the PET application. Out of many available technologies, a new third generation MOSFET wqas selected and implemented as input transistor in an original charge sensitive (CSP) design. Performance among the best reported to date are obtained. The new design was implemented as a dual-channel preamplifier in high density hybrid (thick film) technology.  相似文献   

15.
介绍了一套用于硅多条阵列探测器中的高密度多通道电荷灵敏放大器的研制和阵列探测器电子学的发展现状和工作原理,提出了设计原则和设计思路,特别介绍了一个新开发的用于硅多条探测器中的48路电荷灵敏前置放大器的设计和实际测量结果.它具有低成本、高密度的特点,好于1%的能量分辨和良好的长期稳定性.  相似文献   

16.
介绍了一种新型高速低噪声器的电荷灵敏前置放大器,该放大器已应用于便携式X射线荧光分析仪中,它具有电路结构简单、性能可靠、线性度较好、输出信号上升时间快、噪声低等特点,有较好的性能价格比。  相似文献   

17.
We report on the multichannel IC (RX64DTH) designed for position sensitive X-ray measurements with silicon strip detectors and dedicated to medical imaging applications. This integrated circuit has a binary readout architecture with a double threshold allowing on selection energy window for measured signals. The design was realized in a 0.8 /spl mu/m CMOS process. The core of the RX64DTH IC consists of 64 readout channels. The single channel is built with four basic blocks: charge sensitive preamplifier, shaper, two independent discriminators, and two independent 20-bit counters. Each readout channel counts pulses which are above the low discriminator threshold and counts pulses independently above the high discriminator threshold. The energy resolution in such architecture is limited by the noise of a single channel and by channel to channel threshold spread. We present the noise and matching performance of a 384-channel module built with a silicon strip detector and six RX64DTH ICs. In the 384-channel module an equivalent noise charge of about 200 el. rms is achieved for the shaper peaking time of 0.8 /spl mu/s and strip capacitance of 3 pF. The deviation of discriminator thresholds for the whole system is only 87 el. rms. The obtained results show that the energy resolution and uniformity of analog parameters (noise, gain, offset) are sufficient for medical diagnostic applications such as dual energy mammography and angiography.  相似文献   

18.
本文提出了一种电荷灵敏放大器不用反馈高值电阻的新方法。对这种方法作了电路分析以及对实际电路的测量结果作了介绍。  相似文献   

19.
用于化合物半导体探测器的小型电荷灵敏前置放大器   总被引:3,自引:2,他引:1  
本文介绍了以运算放大器为主要器件的用于化合物半导体探测器低功耗、低噪声的小型化电荷灵敏前置放大器。  相似文献   

20.
用于Ge(Li)探测器的低噪声电荷灵敏放大器   总被引:2,自引:2,他引:0  
本文介绍用于同轴Ge(Li)探测器的QF-1105型低噪声电荷灵敏放大器,零电容噪声≤700eV(Ge)(典型值为603 eV),噪声斜率≤15 eV/pF。  相似文献   

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