SODEL FET: novel channel and source/drain profile engineering schemes by selective Si epitaxial growth technology

In this paper, novel channel and source/drain profile engineering schemes are proposed for sub-50-nm bulk CMOS applications. This device, referred to as the silicon-on-depletion layer FET (SODEL FET), has the depletion layer beneath the channel region, which works as an insulator like a buried oxide in a silicon-on-insulator MOSFET. Thanks to this channel structure, junction capacitance (C/sub j/) has been reduced in SODEL FET, i.e., C/sub j/ (area) was /spl sim/0.73 fF//spl mu/m/sup 2/ both in SODEL nFET and pFET at Vbias =0.0 V. The body effect coefficient /spl gamma/ is also reduced to less than 0.02 V/sup 1/2/. Nevertheless, current drives of 886 /spl mu/A//spl mu/m (I/sub off/=15 nA//spl mu/m) in nFET and -320 /spl mu/A//spl mu/m (I/sub off/=10 nA//spl mu/m) in pFET have been achieved in 70-nm gate length SODEL CMOS with |V/sub dd/|=1.2 V. New circuit design schemes are also proposed for high-performance and low-power CMOS applications using the combination of SODEL FETs and bulk FETs on the same chip for 90-nm-node generation and beyond.     

SOS/CMOS as a High-Performance LSI Device

To realize a high-performance LSI, the devices used should satisfy the following requirements: 1) high-speed operation, 2) low power consumption, 3) easy designability, and 4) high integration capability. SOS/CMOS has been examined both experimentally and theoretically for these aspects. Ideal CMOS operation with /spl tau//sub pd/ ~ 100 ps with 0.1-pJ energy required to switch an inverter is obtained. 1-GHz operation is confirmed on dynamic 1/16 frequency dividers with 1.0-/spl mu/m effective channel-length devices. Using the same device, a maximum multiplying time, /spl tau//sub mul/ ~ 25 ns at 5 V with 15-mW average power at 10/sup 7/ multiplications/s is obtained on a 4 X 4 parallel multiplier. The above result agrees with circuit simulation predictions without including stray capacitance associated with the wiring. The same simulation predicts rmul ~ 60 ns with a maximum power dissipation of 200 mW at 16-MHz operation for a 16 X 16 parallel multiplier. This prediction is also confirmed experimentally. These facts indicate good designability of SOS/CMOS. For larger scale integration capability estimation, power dissipation and wiring delay were examined theoretically for bulk NMOS, bulk CMOS, and SOS/CMOS. The results indicate that for smaller scale integration, bulk NMOS and SOS/CMOS operate faster than bulk CMOS. However, for larger scale integration, SOS/CMOS operates faster than bulk CMOS which, in turn, operates faster than bulk NMOS.     

Characterization of CMOS Devices for VLSI

CMOS bulk and SOS technologies are discussed for VLSI with emphasis on static and dynamic characteristics of two-input NAND gates. Olpthnum performance (minimum figure of merit FM= f/sub pd/P/sub d/) is obtained for a CMOS/SOS two-input NAND gate (FO = 2, C/sub L/ = 22 fF) with an electrical channel length L = 0.75 /spl mu/m, channel width W= 5.0 /spl mu/m, and oxide thickness X/sub O/ = 450 /spl Aring/with V/sub DD/ = 3.0 V, to yield t/sub pd/ = 400 ps and P/sub d/ = 250 /spl mu/W (t/sub pd/P/sub d/ = 100 fJ) at room temperature. Bulk technology performs within a factor of 2 of SOS for t/sub pd/ and P/sub d/. CMOS technologies offer subnanosecond propagation delays, similar to ECL bipolar, at the low submilliwatt power levels of CMOS. An analytical expression for t/sub pd/ describes the performance of two-input NAND gates in terms of device modeling and fabrication parameters. Such an expression provides a hierarchal modeling approach to characterize mini-cells for VLSI.     

1.5-V single work-function W/WN/n/sup +/-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

This letter reports on 1.5-V single work-function W/WN/n/sup +/-poly gate CMOS transistors for high-performance stand-alone dynamic random access memory (DRAM) and low-cost low-leakage embedded DRAM applications. At V/sub dd/ Of 1.5-V and 25/spl deg/C, drive currents of 634 /spl mu/A//spl mu/m for 90-nm L/sub gate/ NMOS and 208 /spl mu/A-/spl mu/m for 110-nm L/sub gate/ buried-channel PMOS are achieved at 25 pA//spl mu/m off-state leakage. Device performance of this single work function technology is comparable to published low leakage 1.5-V dual work-function technologies and 25% better than previously reported 1.8-V single work-function technology. Data illustrating hot-carrier immunity of these devices under high electric fields is also presented. Scalability of single work-function CMOS device design for the 90-nm DRAM generation is demonstrated.     

Area-efficient CMOS charge pumps for LCD drivers

Area-efficient 4/spl times/ charge pumps based on the cross-coupled structure that uses the V/sub dd/-2V/sub dd/ outputs alternately to reduce the number of power devices and capacitors are presented. Compared with conventional designs, our best design can save two power transistors, one capacitor, and two level shift circuits. An integrated 4/spl times/ charge pump is then designed to deliver 100 /spl mu/A at 9 V using a 0.8-/spl mu/m AMS high-voltage CMOS process. The topology can be extended to 2n/spl times/ charge pumps, and a 6/spl times/ charge pump is also fabricated and tested to demonstrate the validity of the extension.     

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated to study the feasibility of higher performance operation. Nitrogen concentration in gate oxynitride was optimized to reduce gate current I/sub g/ and to prevent boron penetration in the pFET. The thermal budget in the middle of the line (MOL) process was reduced enough to realize shallower junction depth in the S/D extension regions and to suppress gate poly-Si depletion. Finally, the current drives of 676 /spl mu/A//spl mu/m in nFET and 272 /spl mu/A//spl mu/m in pFET at V/sub dd/=0.85 V (at I/sub off/=100 nA//spl mu/m) were achieved and they are the best values for 35 nm gate length CMOS reported to date.     

A 2-V 23-/spl mu/A 5.3-ppm//spl deg/C curvature-compensated CMOS bandgap voltage reference

A high-order curvature-compensated CMOS bandgap reference, which utilizes a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Implemented in a standard 0.6-/spl mu/m CMOS technology with V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0/spl deg/C, the proposed voltage reference can operate down to a 2-V supply and consumes a maximum supply current of 23 /spl mu/A. A temperature coefficient of 5.3 ppm//spl deg/C at a 2-V supply and a line regulation of /spl plusmn/1.43 mV/V at 27/spl deg/C are achieved. Experimental results show that the temperature drift is reduced by approximately five times when compared with a conventional bandgap reference in the same technology.     

A 32-Mb chain FeRAM with segment/stitch array architecture

This paper demonstrates the 32-Mb chain ferroelectric RAM (chain FeRAM) with 0.2-/spl mu/m three-metal CMOS technology. A small die size of 96 mm/sup 2/ and a high cell/chip area efficiency of 65.6% are realized not only by the small cell size using capacitor-on-plug technology but also by two key techniques that utilize the three-metal process: 1) a compact memory cell block structure that eliminates plateline area and reduces block selector area and 2) the segment/stitch array architecture which reduces the area of row decoders and plate drivers. As a result, the average cell size shrinks to 1.875 /spl mu/m/sup 2/, which is smaller than a 0.13-/spl mu/m SRAM cell, and the chip size is reduced to 70% of the chain FeRAM of conventional configuration with two-metal process. Moreover, a power-on/off sequence suitable to the chain FeRAM is introduced to protect the memory cell data from the startup noise. Compatibility with low-power SRAM is a key issue for mobile applications. The low-standby-current bias generator is introduced and the standby current of the chip is suppressed to 3 /spl mu/A. The modified address access mode is also adopted to eliminate the need of intentional address transition after the startup of the chip. The chip enable access time was 50 ns and cycle time was 75 ns at 3.0-V V/sub dd/.     

A technique to improve the drive current of high-voltage I/O transistors in digital CMOS technologies

By combining a 0.12-/spl mu/m-long 1.2-V thin-oxide transistor with a 0.22-/spl mu/m-long 3.3-V thick-oxide transistor in a 0.13-/spl mu/m CMOS process, a composite MOS transistor structure with a drawn gate length of 0.34 /spl mu/m is realized. Measurements show that at V/sub GS/=1.2 V and V/sub DS/=3.3 V, the composite transistor has more than two times the drain current of the minimum channel length (0.34 /spl mu/m) 3.3-V thick-oxide transistor, while having the same breakdown voltage (V/sub BK/) as the thick-oxide transistor. Exploiting these, it should be possible to implement 3.3-V I/O transistors with better combination of drive current, threshold voltage (V/sub T/) and breakdown voltage in conventional CMOS technologies without adding any process modifications.     

A CMOS voltage reference based on weighted /spl Delta/V/sub GS/ for CMOS low-dropout linear regulators

A CMOS voltage reference, which is based on the weighted difference of the gate-source voltages of an NMOST and a PMOST operating in saturation region, is presented. The voltage reference is designed for CMOS low-dropout linear regulators and has been implemented in a standard 0.6-/spl mu/m CMOS technology (V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0/spl deg/C). The occupied chip area is 0.055 mm/sup 2/. The minimum supply voltage is 1.4 V, and the maximum supply current is 9.7 /spl mu/A. A typical mean uncalibrated temperature coefficient of 36.9 ppm//spl deg/C is achieved, and the typical mean line regulation is /spl plusmn/0.083%/V. The power-supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz are -47 and -20 dB, respectively. Moreover, the measured noise density with a 100-nF filtering capacitor at 100 Hz is 152 nV//spl radic/(Hz) and that at 100 kHz is 1.6 nV//spl radic/(Hz).     

Normal optical flow measurement on CMOS APS imager

A 92/spl times/52 active pixel sensor (APS) for dense normal flow estimation is presented. The sensor combines imaging and processing on the same chip efficiently. The algorithm computes partial derivatives with respect to time and space and uses their ratio to compute normal flow velocity. The chip, which has been fabricated in a CMOS 0.5 /spl mu/m process, occupies an area of 4.5 mm/sup 2/ and consumes 2.6 mW power at V/sub dd/=5 V.     

Low-voltage high performance compact all cascode CMOS current mirror

A high performance and compact current mirror with extremely low input and high output resistances (R/sub in//spl sim/0.01/spl Omega/, R/sub out//spl sim/10 G/spl Omega/), high copying accuracy, very low input and output voltage requirements (V/sub in/, V/sub out//spl ges/V/sub DSsat/), high bandwidth (200 MHz using a 0.5 /spl mu/m CMOS technology) and low settling time (25 ns) is proposed. Simulations and experimental results are shown that validate the circuit.     

A 25-ns 1-Mbit CMOS SRAM with loading-free bit lines

A 128 K/spl times/8-b CMOS SRAM is described which achieves a 25-ns access time, less than 40-mA active current at 10 MHz, and 2-/spl mu/A standby current. The novel bit-line circuitry (loading-free bit line), using two kinds of NMOSFETs with different threshold voltages, improves bit-line signal speed and integrity. The two-stage local amplification technique minimizes the data-line delay. The dynamic double-word-line scheme (DDWL) allows the cell array to be divided into 32 sections along the word-line direction without a huge increase in chip area. This allows the DDWL scheme to reduce the core-area delay time and operating power to about half that of other conventional structures. A double-metal 0.8-/spl mu/m twin-tub CMOS technology has been developed to realize the 5.6/spl times/9.5-/spl mu//SUP 2/ cell size and the 6.86/spl times/15.37-mm/SUP 2/ chip size.     

A low-voltage CMOS switch with a novel clock boosting scheme

There is a strong demand for an input switch in switched-capacitor circuits, covering rail-to-rail signal swing when low power-supply voltages are used. This brief proposes a novel clock-boosting scheme. The generated clock voltages of this new circuit are applied to a regular CMOS transmission gate to implement a simple and robust sampling switch when the supply voltages are very low. In this new approach, during the sampling phase, the gate-voltage of an nMOS switch is boosted up to V/sub dd/+k/spl middot/V/sub dd/, and the gate voltage of a pMOS switch is lowered to V/sub gnd/-k/spl middot/V/sub dd/, where k can be made programmable, and is usually smaller than 1. This allows sampling of the full signal swing, even when supply voltages are lower than |V/sub th/,p|+V/sub th/,n without applying extreme stress to the gate oxide of a transistor.     

InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and f/sub max/ and low C/sub cb//I/sub c/ ratio

We report an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT), fabricated using a conventional triple mesa structure, exhibiting a 370-GHz f/sub /spl tau// and 459-GHz f/sub max/, which is to our knowledge the highest f/sub /spl tau// reported for a mesa InP DHBT-as well as the highest simultaneous f/sub /spl tau// and f/sub max/ for any mesa HBT. The collector semiconductor was undercut to reduce the base-collector capacitance, producing a C/sub cb//I/sub c/ ratio of 0.28 ps/V at V/sub cb/=0.5 V. The V/sub BR,CEO/ is 5.6 V and the devices fail thermally only at >18 mW//spl mu/m/sup 2/, allowing dc bias from J/sub e/=4.8 mA//spl mu/m/sup 2/ at V/sub ce/=3.9 V to J/sub e/=12.5 mA//spl mu/m/sup 2/ at V/sub ce/=1.5 V. The device employs a 30 nm carbon-doped InGaAs base with graded base doping, and an InGaAs-InAlAs superlattice grade in the base-collector junction that contributes to a total depleted collector thickness of 150 nm.     

Low-power low-voltage CMOS A/D sigma-delta modulator for bio-potential signals driven by a single-phase scheme

Since the 1970's, the analog switches in switched-capacitor (SC) circuits are operated by nonoverlapping bi-phase control signals (/spl phi//sub 1/, /spl phi//sub 2/). The nonoverlapping of these two phases is essential for successful SC operation since, a capacitor inside an SC circuit can discharge if two switches, driven by /spl phi//sub 1/ and /spl phi//sub 2/, are turned on simultaneously. Moreover, since 1983, two additional phases are generally used in many SC circuits, which consist of advanced versions of /spl phi//sub 1/ and /spl phi//sub 2/. These two additional phases overcome the problem of signal-dependent charge injection. This paper presents a low-power and low-voltage analog-to-digital (A/D) interface module for biomedical applications. This module provides an A/D conversion based on a mixed clock-boosting/switched-opamp (CB/SO) second-order sigma-delta (/spl Sigma//spl Delta/) modulator, capable of interfacing with several different types electrical signals existing in the human body, only by re-programming the output digital filter. The proposed /spl Sigma//spl Delta/ architecture employs a novel single-phase scheme technique, which improves the dynamic performance and highly reduces the clocking circuitry complexity, substrate noise and area. Simulated results demonstrate that the signal integrity can be preserved by exploring the gap between the high conductance region of pMOS and nMOS switches at low power-supply voltages and the fast clock transitions that exist in advanced CMOS technologies. The mixed CB/SO architecture together with the overall distortion reduction resulting from using the proposed single-phase scheme, result that the dynamic range of the modulator is pushed closer to the theoretical limit of an ideal second-order /spl Sigma//spl Delta/ modulator.     

MOS transistors operated in the lateral bipolar mode and their application in CMOS technology

Operation of an MOS transistor as a lateral bipolar is described and analyzed qualitatively. It yields a good bipolar transistor that is fully compatible with any bulk CMOS technology. Experimental results show that high /spl beta/-gain can be achieved and that matching and 1/f noise properties are much better than in MOS operation. Examples of experimental circuits in CMOS technology illustrate the major advantages that this device offers. A multiple current mirror achieves higher accuracy, especially at low currents. An operational transconductance amplifier has an equivalent input noise density below 0.1 /spl mu/V//spl radic/Hz for frequencies as low as 1 Hz and a total current of 10 /spl mu/A. A bandgap reference yields a voltage stable within 3 mV from -40 to +80/spl deg/C after digital adjustment at ambient temperature. Other possible applications are suggested.     

A CMOS analog front-end IC for portable EEG/ECG monitoring applications

A new digital programmable CMOS analog front-end (AFE) IC for measuring electroencephalograph or electrocardiogram signals in a portable instrumentation design approach is presented. This includes a new high-performance rail-to-rail instrumentation amplifier (IA) dedicated to the low-power AFE IC. The measurement results have shown that the proposed biomedical AFE IC, with a die size of 4.81 mm/sup 2/, achieves a maximum stable ac gain of 10 000 V/V, input-referred noise of 0.86 /spl mu/ V/sub rms/ (0.3 Hz-150 Hz), common-mode rejection ratio of at least 115 dB (0-1 kHz), input-referred dc offset of less than 60 /spl mu/V, input common mode range from -1.5 V to 1.3 V, and current drain of 485 /spl mu/A (excluding the power dissipation of external clock oscillator) at a /spl plusmn/1.5-V supply using a standard 0.5-/spl mu/m CMOS process technology.     

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/

InP-In/sub 0.53/Ga/sub 0.47/As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 391-GHz f/sub /spl tau// and 505-GHz f/sub max/, which is the highest f/sub /spl tau// reported for an InP DHBT-as well as the highest simultaneous f/sub /spl tau// and f/sub max/ for any mesa HBT. The devices have been aggressively scaled laterally for reduced base-collector capacitance C/sub cb/. In addition, the base sheet resistance /spl rho//sub s/ along with the base and emitter contact resistivities /spl rho//sub c/ have been lowered. The dc current gain /spl beta/ is /spl ap/36 and V/sub BR,CEO/=5.1 V. The devices reported here employ a 30-nm highly doped InGaAs base, and a 150-nm collector containing an InGaAs-InAlAs superlattice grade at the base-collector junction. From this device design we also report a 142-GHz static frequency divider (a digital figure of merit for a device technology) fabricated on the same wafer. The divider operation is fully static, operating from f/sub clk/=3 to 142.0 GHz while dissipating /spl ap/800 mW of power in the circuit core. The circuit employs single-buffered emitter coupled logic (ECL) and inductive peaking. A microstrip wiring environment is employed for high interconnect density, and to minimize loss and impedance mismatch at frequencies >100 GHz.     

A low-power SRAM using hierarchical bit line and local sense amplifiers

This paper proposes a low power SRAM using hierarchical bit line and local sense amplifiers (HBLSA-SRAM). It reduces both capacitance and write swing voltage of bit lines by using the hierarchical bit line composed of a bit line and sub-bit lines with local sense amplifiers. The HBLSA-SRAM reduces the write power consumption in bit lines without noise margin degradation by applying a low swing signal to the high capacitive bit line and by applying a full swing signal to the low capacitive sub-bit line. The HBLSA-SRAM reduces the swing voltage of bit lines to V/sub DD//10 for both read and write. It saves 34% of the write power compared to the conventional SRAM. An SRAM chip with 8 K/spl times/32 bits is fabricated in a 0.25-/spl mu/m CMOS process. It consumes 26 mW read power and 28 mW write power at 200 MHz with 2.5 V.