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《稀有金属材料与工程》2016,(Z1)
以钨粉和氧化钨溶胶干粉作为前驱体,通过水热合成以及溶胶凝胶法制备了纳米氧化钨。通过X射线衍射分析仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、傅里叶变换红外分光光度计(FT-IR)以及拉曼光谱(Raman)对水热产物进行了表征和分析。XRD表征显示2种结构分别属于单斜和六角相的氧化钨.电镜表征显示水热产物为纳米短棒和纳米长棒结构。为进一步研究水热产物对氧化钨气致变色性能的影响,通过将溶胶与不同晶相纳米结构复合的方式制备出了同源WO3复合薄膜.通过紫外分光光度计测试其气致变色性能。结果表明:单斜相复合薄膜降低了氧化钨的首次致色时间,六角相的复合薄膜保持了很好的气致循环特性。 相似文献
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棒状金纳米粒子的制备及其光谱特性 总被引:1,自引:0,他引:1
以银离子为辅助粒子,十六烷基三甲基溴化铵(CTAB)为表面活性剂,抗坏血酸为弱还原剂,利用晶种法制备棒状金纳米粒子,着重研究晶种用量与氯金酸量的比例对棒状纳米粒子形状和产率的影响。利用透射电子显微镜(TEM)和X射线衍射(XRD)仪对纳米粒子的形貌及晶体结构进行分析,利用紫外可见光谱(UV-Vis)对产物进行光谱表征。结果表明,纳米棒为面心立方结构,其UV-Vis出现位于530 nm处的短波吸收和970~980 nm的长波吸收,随着晶种与氯金酸用量比例的增加,纳米棒的长径比出现先增大后减小的趋势,并最终形成球形颗粒。最后探讨晶种用量影响金纳米棒生长的机制。 相似文献
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采用简单的水热法合成了Dy(OH)3纳米棒和纳米带,通过SEM、TEM、EDS和XRD等手段对产物进行了表征.研究了pH值和水热温度对Dy(OH)3纳米晶形貌的影响.实验发现,调节水热温度可以控制Dy(OH)3纳米棒的形貌,而Dy(OH)3纳米带的形成与pH值密切相关.这为合成其它稀土化合物一维纳米材料提供了一个新的途径. 相似文献
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利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3/BN薄膜,在氨气中退火合成了大量的一维GaN纳米棒.用X射线衍射(XRD)、选区电子衍射(SAED)、傅立叶红外透射谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光谱(PL)对样品的晶体结构、元素成分、形貌特征和光学特性进行了分析.结果表明GaN纳米棒为六方纤锌矿结构的单晶相,其直径在150 nm~400 nm左右,长度可达几十微米.室温下光致发光谱的测试发现了较强的372nm处的强紫外发光峰和420nm处的蓝色发光峰. 相似文献
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利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3/BN薄膜,在氨气中退火合成了大量的一维GaN纳米棒.用X射线衍射(XRD)、选区电子衍射(SAED)、傅立叶红外透射谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光谱(PL)对样品的晶体结构、元素成分、形貌特征和光学特性进行了分析.结果表明:GaN纳米棒为六方纤锌矿结构的单晶相,其直径在150 nm~400 nm左右,长度可达几十微米.室温下光致发光谱的测试发现了较强的372nm处的强紫外发光峰和420nm处的蓝色发光峰. 相似文献
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Xinjuan Wang Bingsuo Zou Qinglin ZhangAihua Lei Wenjie ZhangPinyun Ren 《Journal of Alloys and Compounds》2011,509(41):9959-9963
CdS and ZnS nanostructures with complex urchinlike morphology were synthesized by a facile solvothermal approach in a mixed solvent made of ethylenediamine, ethanolamine and distilled water. No extra capping agent was used in the process. The structure, morphologies and optical properties of these nanostructures were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. The as-synthesized urchinlike architectures were composed of nanorods with wurtzite structure. The preferred growth direction of nanorods was found to be the [0 0 1] direction. The PL spectrum of CdS nanostructures exhibited a highly intense red emission band centered at about 706 nm. On the basis of the experimental results, a possible growth process has been discussed for the formation of the CdS and ZnS urchinlike structures. 相似文献
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Nuengruethai Ekthammathat Titipun Thongtem Anukorn Phuruangrat Somchai Thongtem 《稀有金属(英文版)》2011,30(6):572-576
Monoclinic and hexagonal CePO4 nanoparticles and nanorods were successfully synthesized from Ce(NO3) 3·6H2O and Na3PO4·12H2O solu-tions at pH 1-5 by a 180 W microwave radiation for 60 min.The products were characterized by X-ray diffraction(XRD) ,Fourier transform infrared(FTIR) spectroscopy,and scanning electron microscopy(SEM) .XRD patterns revealed that the products are hexagonal CePO4 structures at pH 2-5,and monoclinic CePO4 structures at pH 1.SEM characterization shows that these products were nanoparticles,short nanorods,and long nanorods,controlled by the pH of the precursor solutions.Optical properties of the nanorods were also investigated by ultraviolet-visible(UV-vis) and photoluminescence(PL) spectroscopy. 相似文献
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Heesun Yang 《Metals and Materials International》2006,12(4):351-355
Nanorods of S2− rich CdS were synthesized by a reaction of excess S versus Cd precursors in the presence of ethylene diamine. The photoluminescence
(PL) emission from the S2− rich CdS nanorods was broad with a peak at ∼710 nm, which was 40 nm longer in wavelength than the PL peak from Cd2+ rich CdS (∼670 nm) nanorods. The influence of surface electron or hole trap states on the luminescent pathway of CdS nanorods
will be discussed to explain these shifts in wavelength. Nanocrystals of Au ∼2 nm in size were grown on S2− rich surfaces of CdS nanorods. Significant luminescence quenching was observed from the Au nanocrystals on the CdS nanorods
due to interfacial charge separation. Change separation by the Au nanocrystals on the CdS resulted in enhanced photocatalytic
degradation of Procion red mix-5B (PRB) dye in an aqueous solution under UV light irradiation. 相似文献
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利用稀土金属Tb作为催化剂,通过氨化磁控溅射在Si(111)衬底上的Ga203/Tb薄膜制备出GaN纳米棒.X射线衍射和傅里叶红外吸收谱测试结果表明,制备的样品为六方结构的GaN.利用扫描电子显微镜、透射电子显微镜和高分辨透射电子显微镜对样品进行测试,结果显示样品为单晶结构的纳米棒,直径为80~200 nm,长度达几十微米.最后简单地讨论了GaN纳米棒的生长机制. 相似文献
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通过离子交换和沉淀反应制备纳米复合材料CdS/TiO2NTs.采用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、漫反射紫外-可见吸收光谱(DRUVAS)、荧光光谱(FES)、X射线荧光分析(XRF)等手段对该复合材料的结构进行表征.SEM结果表明:钛酸盐纳米管的形成经由TiO2颗粒-片状的钛酸盐-卷曲的钛酸盐纳米管的自组装过程.XRD、DRUVAS、FES和FES结果表明:平均粒度大约 8 nm 的六方相CdS均匀的负载于锐钛矿型TiO2纳米管表面,其吸收边扩展到可见区.与TiO2纳米管及TiO2粉末相比,CdS/TiO2NTs 纳米复合材料展示了较高的可见光催化分解水产氢活性. 相似文献
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ZHUANGHuizhao GAOHaiyong XUEChengshan WANGShuyun DONGZhihua HEJianting 《稀有金属(英文版)》2005,24(2):110-114
GaN nanorods have successfully been synthesized on Si(111) substrates via ammoniating ZnO/Ga2O3 films at 950℃. Ga2O3 thin films and ZnO middle layers were deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. ZnO volatilized at 950℃ in the ammonia ambience and Ga2O3 reacted to NH3 to fabricate GaN nanorods in the later ammoniating process. The volatilization of ZnO layers played an important role in the fabrication. The structure and composition of the GaN nanorods were studied by X-ray diffraction (XRD) and Fourier transform infrared spectrophotometer (FTIR). The orphology ofGaN nanorods was investigated using scanning electron microscopy (SEM) and transmission electronic microscope (TEM). The analyses of measured results revealed that GaN nanorods with hexagonal wurtzite stxucture were prepared by this method. 相似文献
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Anukorn Phuruangrat Phattranit Dumrongrojthanath Oranuch Yayapao Jirapong Arin Somchai Thongtem Titipun Thongtem 《稀有金属(英文版)》2016,35(5):390-395
ZnO nanostructure materials doped with different La contents were synthesized by sonochemical method. The products were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM),transmission electron microscopy(TEM), Raman spectroscopy, and Fourier transform infrared spectroscopy(FTIR). In this research, XRD patterns of pure ZnO and La-doped ZnO are specified as hexagonal wurtzite ZnO structure with no detection of La2O3 phase. SEM and TEM characterization revealed the flower shape of pure ZnO built-up from petals of hexagonal prisms with hexagonal pyramid tips. Upon doping with La, the flower-shaped ZnO is broken into individual 1D prism-like nanorods. Photocatalytic activities of the as-synthesized products were determined by measuring the degradation of methylene blue(MB) under ultraviolet–visible(UV) light irradiation.Among them, the 2.0 mol% La-doped ZnO shows better photocatalytic properties than any other products. 相似文献
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《稀有金属(英文版)》2009,(2)
A series of CdxZn1-xS (x = 0.1-0.9) photocatalysts were prepared by coprecipitation. They could form solid solution semiconductors with hexagonal phase in agreement with pure CdS by characterization of XRD. The photophysical properties of CdxZn1-xS photocatalysts were measured by UV-Vis diffuse reflectance spectrum and surface photovoltage spectroscopy (SPS). The band gap energy gradually reduced with the increasing of x value in CdxZn1-xS,and when x = 0.7,the Cd0.7Zn0.3S photocatalyst had the strongest sur... 相似文献
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QIUJijun JINZhengguo WUWeibing LIUXiaoxin CHENGZhijie 《稀有金属(英文版)》2004,23(4):311-316
CdS thin films were deposited by the ion layer gas reaction (ILGAR) method. Structural, chemical, topographical development as well as optical and electrical properties of as-deposited and annealed thin films were investigated by XRD,SEM, XPS, AFM and UV-VIS. The results showed that the thin films are uniform, compact and good in adhesion to the substrates, and the growth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structure to the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. An amount of C, O and C1 impudries can be reduced by increasing the drying temperature or by annealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higher wavelength after annealing or increasing film thickness. The electrical resistivity decreases with increasing annealing temperature and film thickness. 相似文献
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Ultrasonic agitation was applied during the chemical bath deposition of CdS thin films. Ultrasonication resulted in a dramatic
change in the surface morphology, growth rate, and optical properties of CdS films. There were virtually no colloidal particles
adsorbed on the surface. The surface roughness measured by atomic force microscopy was reduced by a factor of two. Band gap
energy increased to 2.39 eV from 2.37 eV. X-ray patterns showed that the preferred orientation changed from hexagonal (002)/cubic
(111) to hexagonal (101). Optical transmission improved in the wavelength range larger than 520nm. The chemical reaction for
CdS formation started at a lower temperature under ultrasonication, and dense films were obtained even when the chemical composition
of the aqueous solution deviated far from optimum conditions. 相似文献