基于溶胶凝胶法水热合成WO_3纳米材料及气致变色应用（英文）

以钨粉和氧化钨溶胶干粉作为前驱体,通过水热合成以及溶胶凝胶法制备了纳米氧化钨。通过X射线衍射分析仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、傅里叶变换红外分光光度计(FT-IR)以及拉曼光谱(Raman)对水热产物进行了表征和分析。XRD表征显示2种结构分别属于单斜和六角相的氧化钨.电镜表征显示水热产物为纳米短棒和纳米长棒结构。为进一步研究水热产物对氧化钨气致变色性能的影响,通过将溶胶与不同晶相纳米结构复合的方式制备出了同源WO3复合薄膜.通过紫外分光光度计测试其气致变色性能。结果表明:单斜相复合薄膜降低了氧化钨的首次致色时间,六角相的复合薄膜保持了很好的气致循环特性。     

纳米铜的制备与表征

采用液相还原法研究了纳米铜粉的制备工艺;探讨了乙二胺四乙酸(EDTA)与硫酸铜的浓度比和pH值对产物的影响,并对优化参数条件下的样品进行XRD和TEM检测.结果表明,制备的试样为纯净的球状纳米级立方晶系铜粉,平均晶粒尺寸为2.8 nm.     

微波法合成ZrO_2和Y-ZrO_2纳米晶体与表征

用微波法在乙醇介质中合成二氧化锆(ZrO2)和6种不同含量的钇稳定二氧化锆(YSZ)纳米晶体,样品经过不同温度的煅烧,分别用X射线衍射(XRD)、EDS元素分析、透射电子显微镜(TEM)和比表面积(BET)等手段进行晶体结构和微观形态的研究。结果表明,用微波法在160℃左右可一步合成二氧化锆纳米晶体,掺杂不同含量的钇可控制二氧化锆的结构从单斜相过渡到立方相。四方相和立方相晶型的YSZ在高温下结构稳定,仍为纳米晶粒,表现了良好的热稳定性。并提出了微波法在乙醇介质中合成二氧化锆的机理。     

棒状金纳米粒子的制备及其光谱特性

以银离子为辅助粒子,十六烷基三甲基溴化铵(CTAB)为表面活性剂,抗坏血酸为弱还原剂,利用晶种法制备棒状金纳米粒子,着重研究晶种用量与氯金酸量的比例对棒状纳米粒子形状和产率的影响。利用透射电子显微镜（TEM）和X射线衍射（XRD）仪对纳米粒子的形貌及晶体结构进行分析,利用紫外可见光谱（UV-Vis）对产物进行光谱表征。结果表明,纳米棒为面心立方结构,其UV-Vis出现位于530 nm处的短波吸收和970~980 nm的长波吸收,随着晶种与氯金酸用量比例的增加,纳米棒的长径比出现先增大后减小的趋势,并最终形成球形颗粒。最后探讨晶种用量影响金纳米棒生长的机制。     

水热合成Dy(OH)3纳米棒和纳米带

采用简单的水热法合成了Dy(OH)3纳米棒和纳米带,通过SEM、TEM、EDS和XRD等手段对产物进行了表征.研究了pH值和水热温度对Dy(OH)3纳米晶形貌的影响.实验发现,调节水热温度可以控制Dy(OH)3纳米棒的形貌,而Dy(OH)3纳米带的形成与pH值密切相关.这为合成其它稀土化合物一维纳米材料提供了一个新的途径.     

氨化磁控溅射Ga2O3/BN薄膜制备GaN纳米棒

利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3/BN薄膜,在氨气中退火合成了大量的一维GaN纳米棒.用X射线衍射(XRD)、选区电子衍射(SAED)、傅立叶红外透射谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光谱(PL)对样品的晶体结构、元素成分、形貌特征和光学特性进行了分析.结果表明GaN纳米棒为六方纤锌矿结构的单晶相,其直径在150 nm～400 nm左右,长度可达几十微米.室温下光致发光谱的测试发现了较强的372nm处的强紫外发光峰和420nm处的蓝色发光峰.     

氨化磁控溅射Ga2O3/BN薄膜制备GaN纳米棒

利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3/BN薄膜,在氨气中退火合成了大量的一维GaN纳米棒.用X射线衍射(XRD)、选区电子衍射(SAED)、傅立叶红外透射谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光谱(PL)对样品的晶体结构、元素成分、形貌特征和光学特性进行了分析.结果表明:GaN纳米棒为六方纤锌矿结构的单晶相,其直径在150 nm～400 nm左右,长度可达几十微米.室温下光致发光谱的测试发现了较强的372nm处的强紫外发光峰和420nm处的蓝色发光峰.     

约束弧等离子体制备不同形貌的铝纳米晶

在惰性气氛下,采用约束弧等离子体技术制备了不同形貌的铝纳米晶,研究了工艺参数对纳米晶形貌的影响,并利用X射线衍射(XRD)、透射电子显微镜(TEM)和相应选区电子衍射(SAED)、X射线能量色散分析谱仪(XEDS)对样品的形貌、晶体结构、成分进行表征.同时对纳米晶的形成机理进行了探讨.实验结果表明,气体压力、气体流量和反应时间是影响纳米晶形貌的主要因素,通过控制工艺参数,可以得到不同性能的铝纳米晶,从而实现铝纳米晶的可控制备.     

Co对纳米晶(Fe,Co)-Si-B-P-Cu合金结构及磁性影响

正Markus Kuhnt等人制备了Fe_(85.2-x)Co_xSi_(0.5)B_(9.5)P_4Cu_(0.8)非晶合金(x=0,4,10,15,20,25,35,40,50及57%(原子分数)),在高于400℃温度退火,得到体心立方相的纳米晶及残余非晶相,这是借助XRD、TEM、SAXS及3DAP等方法测得的。磁性测量结果表明,这种纳米晶的矫顽力随钴含量增加从4A·m~(-1)提高到     

Ti_(40)Zr_(40)Ni_(20)合金急冷薄带的组织与相变行为

采用单辊甩带法在不同转速下制备Ti40Zr40Ni20合金薄带,通过X射线衍射(XRD)和透射电子显微术(TEM)分析各样品的急冷组织,并结合热分析方法,研究它们加热时的组织演化行为与相变特征。研究结果表明:随着甩带速率从40 m/s下降到10 m/s,Ti40Zr40Ni20薄带样品中依次生成了单相非晶、非晶+β-Ti(Zr)混合相和单相准晶组织;除单相铸态准晶外,前两种急冷组织在温度接近300℃时开始失稳生成纳米尺度的准晶相,当温度上升到540℃附近,组织中出现了cF96-(Zr,Ti)2Ni大单胞面心立方相(点阵参数a≈1.2 nm)。     

Synthesis and photoluminescence of wurtzite CdS and ZnS architectural structures via a facile solvothermal approach in mixed solvents

CdS and ZnS nanostructures with complex urchinlike morphology were synthesized by a facile solvothermal approach in a mixed solvent made of ethylenediamine, ethanolamine and distilled water. No extra capping agent was used in the process. The structure, morphologies and optical properties of these nanostructures were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. The as-synthesized urchinlike architectures were composed of nanorods with wurtzite structure. The preferred growth direction of nanorods was found to be the [0 0 1] direction. The PL spectrum of CdS nanostructures exhibited a highly intense red emission band centered at about 706 nm. On the basis of the experimental results, a possible growth process has been discussed for the formation of the CdS and ZnS urchinlike structures.     

Microwave-assisted synthesis of CePO<Subscript>4</Subscript> nanorod phosphor with violet emission

Monoclinic and hexagonal CePO4 nanoparticles and nanorods were successfully synthesized from Ce(NO3) 3·6H2O and Na3PO4·12H2O solu-tions at pH 1-5 by a 180 W microwave radiation for 60 min.The products were characterized by X-ray diffraction(XRD) ,Fourier transform infrared(FTIR) spectroscopy,and scanning electron microscopy(SEM) .XRD patterns revealed that the products are hexagonal CePO4 structures at pH 2-5,and monoclinic CePO4 structures at pH 1.SEM characterization shows that these products were nanoparticles,short nanorods,and long nanorods,controlled by the pH of the precursor solutions.Optical properties of the nanorods were also investigated by ultraviolet-visible(UV-vis) and photoluminescence(PL) spectroscopy.     

Growth of Au nanocrystals on CdS nanorods

Nanorods of S²⁻ rich CdS were synthesized by a reaction of excess S versus Cd precursors in the presence of ethylene diamine. The photoluminescence (PL) emission from the S²⁻ rich CdS nanorods was broad with a peak at ∼710 nm, which was 40 nm longer in wavelength than the PL peak from Cd²⁺ rich CdS (∼670 nm) nanorods. The influence of surface electron or hole trap states on the luminescent pathway of CdS nanorods will be discussed to explain these shifts in wavelength. Nanocrystals of Au ∼2 nm in size were grown on S²⁻ rich surfaces of CdS nanorods. Significant luminescence quenching was observed from the Au nanocrystals on the CdS nanorods due to interfacial charge separation. Change separation by the Au nanocrystals on the CdS resulted in enhanced photocatalytic degradation of Procion red mix-5B (PRB) dye in an aqueous solution under UV light irradiation.     

Preparation of GaN Nanorods by Rare Earth Metal Tb Catalyst-Assisted Process

利用稀土金属Tb作为催化剂,通过氨化磁控溅射在Si(111)衬底上的Ga203/Tb薄膜制备出GaN纳米棒.X射线衍射和傅里叶红外吸收谱测试结果表明,制备的样品为六方结构的GaN.利用扫描电子显微镜、透射电子显微镜和高分辨透射电子显微镜对样品进行测试,结果显示样品为单晶结构的纳米棒,直径为80～200 nm,长度达几十微米.最后简单地讨论了GaN纳米棒的生长机制.     

纳米复合材料CdS/TiO2NTs的制备及光催化产氢活性

通过离子交换和沉淀反应制备纳米复合材料CdS/TiO2NTs.采用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、漫反射紫外-可见吸收光谱(DRUVAS)、荧光光谱(FES)、X射线荧光分析(XRF)等手段对该复合材料的结构进行表征.SEM结果表明:钛酸盐纳米管的形成经由TiO2颗粒-片状的钛酸盐-卷曲的钛酸盐纳米管的自组装过程.XRD、DRUVAS、FES和FES结果表明:平均粒度大约 8 nm 的六方相CdS均匀的负载于锐钛矿型TiO2纳米管表面,其吸收边扩展到可见区.与TiO2纳米管及TiO2粉末相比,CdS/TiO2NTs 纳米复合材料展示了较高的可见光催化分解水产氢活性.     

Synthesis of GaN nanorods on Si substrates with assistance of the volatilization of ZnO middle layers

GaN nanorods have successfully been synthesized on Si(111) substrates via ammoniating ZnO/Ga2O3 films at 950℃. Ga2O3 thin films and ZnO middle layers were deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. ZnO volatilized at 950℃ in the ammonia ambience and Ga2O3 reacted to NH3 to fabricate GaN nanorods in the later ammoniating process. The volatilization of ZnO layers played an important role in the fabrication. The structure and composition of the GaN nanorods were studied by X-ray diffraction (XRD) and Fourier transform infrared spectrophotometer (FTIR). The orphology ofGaN nanorods was investigated using scanning electron microscopy (SEM) and transmission electronic microscope (TEM). The analyses of measured results revealed that GaN nanorods with hexagonal wurtzite stxucture were prepared by this method.     

Photocatalytic activity of La-doped ZnO nanostructure materials synthesized by sonochemical method

ZnO nanostructure materials doped with different La contents were synthesized by sonochemical method. The products were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM),transmission electron microscopy(TEM), Raman spectroscopy, and Fourier transform infrared spectroscopy(FTIR). In this research, XRD patterns of pure ZnO and La-doped ZnO are specified as hexagonal wurtzite ZnO structure with no detection of La2O3 phase. SEM and TEM characterization revealed the flower shape of pure ZnO built-up from petals of hexagonal prisms with hexagonal pyramid tips. Upon doping with La, the flower-shaped ZnO is broken into individual 1D prism-like nanorods. Photocatalytic activities of the as-synthesized products were determined by measuring the degradation of methylene blue(MB) under ultraviolet–visible(UV) light irradiation.Among them, the 2.0 mol% La-doped ZnO shows better photocatalytic properties than any other products.     

Photodecomposition of H_2S to H_2 over Cd_xZn_(1-x)S composite photocatalysts

A series of CdxZn1-xS (x = 0.1-0.9) photocatalysts were prepared by coprecipitation. They could form solid solution semiconductors with hexagonal phase in agreement with pure CdS by characterization of XRD. The photophysical properties of CdxZn1-xS photocatalysts were measured by UV-Vis diffuse reflectance spectrum and surface photovoltage spectroscopy (SPS). The band gap energy gradually reduced with the increasing of x value in CdxZn1-xS,and when x = 0.7,the Cd0.7Zn0.3S photocatalyst had the strongest sur...     

Preparation and properties of CdS thin films grown by ILGAR method

CdS thin films were deposited by the ion layer gas reaction (ILGAR) method. Structural, chemical, topographical development as well as optical and electrical properties of as-deposited and annealed thin films were investigated by XRD,SEM, XPS, AFM and UV-VIS. The results showed that the thin films are uniform, compact and good in adhesion to the substrates, and the growth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structure to the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. An amount of C, O and C1 impudries can be reduced by increasing the drying temperature or by annealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higher wavelength after annealing or increasing film thickness. The electrical resistivity decreases with increasing annealing temperature and film thickness.     

Properties of cadmium sulfide thin films deposited by chemical bath deposition with ultrasonication

Ultrasonic agitation was applied during the chemical bath deposition of CdS thin films. Ultrasonication resulted in a dramatic change in the surface morphology, growth rate, and optical properties of CdS films. There were virtually no colloidal particles adsorbed on the surface. The surface roughness measured by atomic force microscopy was reduced by a factor of two. Band gap energy increased to 2.39 eV from 2.37 eV. X-ray patterns showed that the preferred orientation changed from hexagonal (002)/cubic (111) to hexagonal (101). Optical transmission improved in the wavelength range larger than 520nm. The chemical reaction for CdS formation started at a lower temperature under ultrasonication, and dense films were obtained even when the chemical composition of the aqueous solution deviated far from optimum conditions.