Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Effect of proton irradiation on electrical properties of CuInSe2 thin films

High-energy proton irradiation (380 keV and 1 MeV) on the electrical properties of CuInSe₂ (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (0 0 1) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1×10¹³ cm⁻², the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate with proton fluence was estimated to be about 1000 cm⁻¹. The electrical properties of CIS thin films before and after irradiation were studied between 80 and 300 K. From the temperature dependence of the carrier concentration in CIS thin films, we found N_D=9.5×10¹⁶ cm⁻³, N_A=3.7×10¹⁶ cm⁻³ and E_D=21 meV from the fitting to the experimental data on the basis of the charge balance equation. After irradiation, a defect level was created, and N_T=1×10¹⁷ cm⁻³ for a fluence of 3×10¹³ cm⁻², N_T=5.7×10¹⁷ cm⁻³ for a fluence of 1×10¹⁴ cm⁻² and E_T=95 meV were also obtained from the same fitting. The new defect, which acted as an electron trap, was due to proton irradiation, and the defect density was increased with proton fluence.     

The obstructed diffusion of the I3 ion in mesoscopic TiO2 membranes

The diffusional permeability of I⁻₃ ion in acetonitrile in free standing TiO₂ membrane with a porosity of 55% was examined. The apparent diffusion coefficient, D_app at 25°C of the ion was found to be 3.4×10⁻⁶ cm^{2 −1}, an order of magnitude smaller than the free diffusion at the same temperature. The temperature dependency of D_app was measured in the range 0–30°C and analysed in terms of the Walden product. The diffusional activation energy was found to be 13.5 kJ/mol. The parameters of interest for the efficiency of mesoscopic wet solar cells are discussed. A back of an envelope calculation shows that although the obstructed diffusion coefficient of the I⁻₃ ion was an order of magnitude smaller than the free diffusion the diffusional flux is still sufficient to meet a current density of 50 mA cm⁻². At incident photon flux of 1 kW m⁻² and at a photopotential of 0.6 V this would correspond to a solar energy efficiency of approximately 30%.     

Effect of Cl ion implantation on electrical properties of CuInSe2 thin films

The effects of Cl ion implantation on the properties of CuInSe₂ epitaxial thin films have been investigated. Using five kinds of accelerating energies, the doped layer with a constant profile of Cl concentration along the depth direction was fabricated. From the results of reflection of high-energy electron diffraction, the damages due to implantation were removed by annealing at 400°C in N₂. The conductivity type in all implanted films was n-type, and the carrier concentration was increased with increasing Cl concentration in the thin films. Consequently, it is considered that Cl acts as a donor in CuInSe₂.     

Bulk p-CuInSe2 photo-electrochemical solar cells

Dense CuInSe₂ of high quality, prepared by the fusion technique in evacuated quartz ampoule from stoichiometric melt, crystallizes in the chalcopyrite structure. Compositional analysis carried out by secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) indicates a uniform distribution of elements through the depth and a composition close to the stoichiometry. The diffuse reflectance spectrum gives a band gap at 0.94 eV. The electrical conductivity follows an Arrhenius-type law with activation energy of 23 meV in conformity with polarons hopping. Above 320 °C, CuInSe₂ undergoes an irreversible oxidation. The thermal variation of the thermopower indicates p-type behavior attributed to copper deficiency and a hole mobility μ_300 K of 0.133 cm² V⁻¹ s⁻¹, thermally activated. In KCl media, the compound exhibits an excellent chemical stability with a corrosion rate of 8 μmol cm⁻² month⁻¹. The photo-electrochemical properties, investigated for the first time on the ingots, confirm the p-type conductivity. From the capacitance measurements, the flat band potential (V_fb=−0.62V_SCE) and the holes density (N_A=4×10¹⁷ cm⁻³) were determined. The valence band, located at 4.43 eV below vacuum, is made up of mainly Se orbital with little admixture of Cu character. The change of the electrolyte causes a variation in the potential V_fb (dV_fb/dpH=−0.058 V pH⁻¹) indicating strong OH⁻ adsorption. The fill factor in S²⁻ media was found to be 0.54; such result was corroborated by semi-logarithmic plots.     

Characterization of co-sputtered Cu-In alloy precursors for CuInSe2 thin films fabrication by close-spaced selenization

Sputtering technique for Cu–In precursor films fabrication using different Cu and In layer sequences have been widely investigated for CuInSe₂ production. But the CuInSe₂ films fabricated from these precursors using H₂Se or Se vapour selenization mostly exhibited poor microstructural properties. The co-sputtering technique for producing Cu–In alloy films and selenization within a close-spaced graphite box resulting in quality CuInSe₂ films was developed. All films were analysed using SEM, EDX, XRD and four-point probe measurements. Alloy films with a broad range of compositions were fabricated and XRD showed mainly In, CuIn₂ and Cu₁₁In₉ phases which were found to vary in intensities as the composition changes. Different morphological properties were displayed as the alloy composition changes. The selenized CuInSe₂ films exhibited different microstructural properties. Very In-rich films yielded the ODC compound with small crystal sizes whilst slightly In-rich or Cu-rich alloys yielded single phase CuInSe₂ films with dense crystals and sizes of about 5 μm. Film resistivities varied from 10⁻²–10⁸ Ω cm. The films had compositions with Cu/In of 0.40–2.3 and Se/(Cu+In) of 0.74–1.35. All CuInSe₂ films with the exception of very Cu-rich ones contained high amount of Se (>50%).     

Synthesis of single crystalline Li0.44MnO2 nanowires with large specific capacity and good high current density property for a positive electrode of Li ion battery

The fabrication of single crystalline Li_0.44MnO₂ nanowires for the positive electrode of lithium ion battery is reported. The single crystalline Li_0.44MnO₂ nanowires are obtained by lithium exchange reaction of Na_0.44MnO₂ nanowires with high aspect ratio. The Li_0.44MnO₂ nanowires indicate both the large specific capacity of around 250 mAh g⁻¹ (1.5-4.5 V vs. Li/Li⁺) and the good high current density property for the positive electrode of lithium ion battery.     

Study of CuInSe2 thin films prepared by electrodeposition

Thin films of p-type CuInSe₂ prepared by a one-step electrodeposition method have been studied by constructing CdS/CuInSe2 junctions. After the electrodeposition, the CuInSe₂ films were treated either in vacuum or in Ar. Cells of the form CdS (high σ)/CdS (low σ)/CuInSe₂ were then fabricated for studying the electrodeposited films. Measurements were specifically carried out to determine the diffusion length of minority carriers in the p-type CuInSe₂. It was found that the minority carrier diffusion length in CuInSe₂ films treated in Ar was generally greater than that for films treated in vacuum under similar conditions. A small area cell (active area 0.11 cm²) with a conversion efficiency of about 7% (under 125 mW/cm² illumination) has been fabricated.     

Preparation and study of structural and optical properties of CSVT deposited CuInSe2 thin films

A simple close-spaced vapour transport (CSVT) system has been designed and fabricated. Copper indium diselenide (CuInSe₂) thin films of wide range of thickness (4000–60000 Å) have been prepared using the fabricated CSVT system at source temperatures 713, 758 and 843 K. A detailed study on the deposition temperature has been made and the temperature profile along with the reaction kinetics is reported. The composition of the chemical constituents of the films has been determined by energy dispersive X-ray analysis. The structural characterization of the as-deposited CuInSe₂ films of various thicknesses has been carried out by X-ray diffraction method. The diffractogram revealed that the CuInSe₂ films are polycrystalline in nature with chalcopyrite structure. The structural parameters such as lattice constants, axial ratio, tetragonal distortion, crystallite size, dislocation density and strain have been evaluated and the results are discussed. The surface morphology of the as-deposited CuInSe₂ thin films has been studied using scanning electron microscope. The transmittance characteristics of the CuInSe₂ films have been studied using double beam spectrophotometer in the wavelength range 4000–15000 Å and the optical constants n and k are evaluated. The absorption coefficient has been found to be very high and is of the order of 10⁵–10⁶ m⁻¹. CuInSe₂ films are found to have a direct allowed transition and the optical band gap is found to be in the range 0.85–1.05 eV.     

Electrochemical properties of lithium sulfur cells using PEO polymer electrolytes prepared under three different mixing conditions

Lithium sulfur cells were prepared by composing with sulfur cathode (PEO)₆LiBF₄ polymer electrolyte and lithium anode. (PEO)₆LiBF₄ polymer electrolyte was prepared under three different mixing conditions: stirred polymer electrolyte (SPE), ball-milled polymer electrolyte (BPE) and ball-milled polymer electrolyte with 10 wt%Al₂O₃ (BCPE). The effects of ball milling and additive were investigated by discharge test according to depth of discharge. The initial discharge capacity of lithium sulfur cell using BCPE was 1670 mAh g⁻¹-sulfur, which was better than those of SPE and BPE, and approximately equal to the theoretical capacity. The cycle performance of Li/(PEO)₆LiBF₄/S cell was remarkably improved by the addition of Al₂O_3.     

An investigation into effect of cationic precursor solutions on formation of CuInSe2 thin films by SILAR method

SILAR deposition of CuInSe₂ films was performed by using Cu²⁺–TEAH₃ (cupric chloride and triethanolamine) and In³⁺–CitNa (indium chloride and sodium citrate) chelating solutions with weak basic pH as well as Na₂SeSO₃ solution at 70 °C. A separate mode and a mixed one of cationic precursor solutions were adopted to investigate effects of the immersion programs on crystallization, composition and morphology of the deposited CuInSe₂ films. Chelating chemistry in two solution modes was deducted based on IR measurement. The XRD, XPS and SEM results showed that well-crystallized, smoothly and distinctly particular CuInSe₂ films could be obtained after annealing in Ar at 400 °C for 1 h by using the mixed cationic solution mode.     

All solid-state electrochromic devices with gelatin-based electrolyte

6×8 cm² electrochromic devices (ECDs) with the configuration K-glass/EC-layer/electrolyte/ion-storage (IS) layer/K-glass, have been assembled using Nb₂O₅:Mo EC layers, a (CeO₂)_0.81–TiO₂ IS-layer and a new gelatin electrolyte containing Li⁺ ions. The structure of the electrolyte is X-ray amorphous. Its ionic conductivity passed by a maximum of 1.5×10⁻⁵ S/cm for a lithium concentration of 0.3 g/15 ml. The value increases with temperature and follows an Arrhenius law with an activation energy of 49.5 kJ/mol. All solid-state devices show a reversible gray coloration, a long-term stability of more than 25,000 switching cycles (±2.0 V/90 s), a transmission change at 550 nm between 60% (bleached state) and 40% (colored state) corresponding to a change of the optical density (ΔOD=0.15) with a coloration efficiency increasing from 10 cm²/C (initial cycle) to 23 cm²/C (25,000th cycle).     

New Li ion-conducting ormolytes

The preparation and characterization of two new families of lithium-conducting solid-state electrolytes is reported. Both systems are silica (SiO₂) – polyethyleneglycol (PEG_n) hybrid materials with (type I) or without (type II) covalent organic-inorganic chemical bonds. Their electrical conductivity has been studied by complex impedance spectroscopy between 20°C and 100°C in the frequency range 1 Hz to 10 MHz as a function of the polymer chain length (200<n<1900), polymer concentration and lithium concentration (4<[O]/[Li]<80). The highest room-temperature ionic conductivity (σ6×10⁻² S cm⁻¹) has been found for type II material for ratios [O]/[Li]=15 and PEG₃₀₀/TEOS=1.0. The effect of the chain length on the polymer mobility has been studied by nuclear magnetic resonance by measuring the Li⁺ line widths and the spin-lattice relaxation time T₁ between -100°C and +100°C. The bonded chain mobility increases with the chain length (type II) while the opposite occurs with unbonded chain material (type I). Both types of materials present high ionic conductivity at room temperature and are adequate as Li⁺-conducting electrolyte in all solid-state electrochemical devices.     

Investigation of the chalcogen interdiffusion in CuIn(TeSe)2 thin films

Graded thin films of CuInSe₂ on CuInTe₂ have been obtained by annealing of precursor structures containing Se and Te separated in depth. The depth profile of the phases in the film was investigated using X-ray diffraction with grazing incidence of the primary beam. Quasi-epitaxial growth of CuInSe₂ on a CuInTe₂ film next to the Mo back-electrode was observed after annealing at 450°C in vacuum. Annealing at higher temperature lead to chalcogen interdiffusion resulting in quaternary films. However, heat treatments of already reacted films did not result in any detectable interdiffusion. From these results the mechanisms governing the growth of films from precursors containing the chalcogens Se and Te separated in depth are discussed with respect to their application for thin film solar cells.     

Fabrication of CuInSe2 films and solar cells by the sequential evaporation of In2Se3 and Cu2Se binary compounds

Cu₂Se/In_xSe(x≈1) double layers were prepared by sequentially evaporating In₂Se₃ and Cu₂Se binary compounds at room temperature on glass or Mo-coated glass substrates and CuInSe₂ films were formed by annealing them in a Se atmosphere at 550°C in the same vacuum chamber. The In_xSe thickness was fixed at 1 μm and the Cu₂Se thickness was varied from 0.2 to 0.5 μm. The CuInSe₂ films were single phase and the compositions were Cu-rich when the Cu₂Se thickness was above 0.35 μm. And then, a thin CuIn₃Se₅ layer was formed on the top of the CuInSe₂ film by co-evaporating In₂Se₃ and Se at 550°C. When the thickness of CuIn₃Se₅ layer was about 150 nm, the CuInSe₂ cell showed the active area efficiency of 5.4% with V_oc=286 mV, J_sc=36 mA/cm² and FF=0.52. As the CuIn₃Se₅ thickness increased further, the efficiency decreased.     

Reaction mechanisms for the limited reversibility of Li-O2 chemistry in organic carbonate electrolytes

The Li-O₂ chemistry in nonaqueous liquid carbonate electrolytes and the underlying reason for its limited reversibility was systematically investigated. X-ray diffraction data showed that regardless of discharge depth lithium alkylcarbonates (lithium propylenedicarbonate (LPDC), or lithium ethylenedicarbonate (LEDC), with other related derivatives) and lithium carbonate (Li₂CO₃) are constantly the main discharge products, while lithium peroxide (Li₂O₂) or lithium oxide (Li₂O) is hardly detected. These lithium alkylcarbonates are generated from the reductive decomposition of the corresponding carbonate solvents initiated by the attack of superoxide radical anions. More significantly, in situ gas chromatography/mass spectroscopy analysis revealed that Li₂CO₃ and Li₂O cannot be oxidized even when charged to 4.6 V vs. Li/Li⁺, while LPDC, LEDC and Li₂O₂ are readily oxidized, with CO₂ and CO released from LPDC and LEDC and O₂ evolved from Li₂O₂. Therefore, the apparent reversibility of Li-O₂ chemistry in an organic carbonate-based electrolyte is actually an unsustainable process that consists of (1) the formation of lithium alkylcarbonates through the reductive decomposition of carbonate solvents during discharging and (2) the subsequent oxidation of these same alkylcarbonates during charging. Therefore, a stable electrolyte that does not lead to an irreversible by-product formation during discharging and charging is necessary for truly rechargeable Li-O₂ batteries.     

Nanocomposite gel electrolyte with large enhanced charge transport properties of an I3/I redox couple for quasi-solid-state dye-sensitized solar cells

TiO₂ nanoparticles was introduced into quasi-solid-state Poly(vinylidenefluoride-co-hexafluoropropylene) (P(VDF-HFP)) based gel electrolyte to form nanocomposite gel electrolyte for quasi-solid-state dye-sensitized solar cells. The steady-state voltammograms revealed that the diffusion performance of the triiodide and iodide in the quasi-solid-state P(VDF-HFP) based gel electrolyte was greatly enhanced after the addition of TiO₂ nanoparticles. Especially, the apparent diffusion coefficient of I₃⁻ increased from 0.76×10⁻¹⁰ m²/s to 4.42×10⁻¹⁰ m²/s, reached the level of the liquid electrolyte (4.04×10⁻¹⁰ m²/s). By introducing TiO₂ nanoparticles, the photoelectric conversion efficiency of the gel based device increased from 5.72% to 7.18%, which reached the level of the liquid electrolytes based device (7.01%). The electrical impedance spectrum revealed that the addition of TiO₂ nanoparticles could reduce the charge recombination at the interface of dyed TiO₂ electrode/electrolyte. The results of the accelerated aging tests showed that the nano-TiO₂ composite gel electrolytes based devices could maintain 90% of their initial value after heating at 60 °C for 1000 h, which indicated that they had better thermostability than the corresponding normal gel electrolyte based devices and liquid electrolyte based devices.     

Electrochemical lithium insertion into amorphous MoO3·2H2O

Following the route of synthesis of β-MoO₃ through soft chemistry methods a new amorphous material with composition MoO₃·2H₂O has been detected. The hydrated molybdenum oxide showed the capacity for electrochemical lithium insertion. The maximum amount of lithium incorporated in this material (∼3.3 Li/Mo) leads to a specific capacity of 490 Ah kg⁻¹. The charge–discharge curve showed a good reversibility in the potential range from 3.2 to 1.1 V versus Li⁺/Li⁰ where the cell voltage decreased monotonously as a function of the degree of lithium inserted. The electrochemical features of amorphous MoO₃·2H₂O suggest that it can be considered as a possible cathode candidate in rechargeable lithium batteries.     

A comparative study of CuInSe2 and CuIn3Se5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry

CuInSe₂ and CuIn₃Se₅ films were grown by stepwise flash evaporation onto glass and Si substrates held at different temperatures. Transmission electron microscopy (TEM) studies revealed that the films grown above 370 K were polycrystalline, with CuInSe₂ films exhibiting larger average grain size than CuIn₃Se₅. Optical absorption studies yielded band gaps of 0.97±0.02 and 1.26±0.02 eV for CuInSe₂ and CuIn₃Se₅, respectively. Rutherford backscattering spectrometry (RBS) study of the films on Si showed that CuInSe₂/Si structures included an inhomogeneous interface region consisting of Cu and Si, whereas CuIn₃Se₅/Si structures presented sharp interface.     

De-intercalation of LixCo0.8Mn0.2O2: A magnetic approach

Samples of LiCo_0.8Mn_0.2O₂ were synthesized by a wet-chemical method using citric acid as a chelating agent, and were characterized by various physical techniques. Powders adopted the α-NaFeO₂ layered structure and were analyzed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and regarding their magnetic properties. Transmission Electron Microscope (TEM) revealed particles with a mean size of 100 nm. Partial chemical delithiation was carried out by using an oxidizing agent. We observe that the material has ability to free lithium ions from its structure by this chemical process, which is analogous to the first step of the charge transfer process in an electrochemical cell. The rate of delithiation is determined independently by magnetic measurements and by the Rietveld refinement of the XRD spectra. Both the concentration of Mn³⁺-Mn⁴⁺ pairs and that of Mn⁴⁺-Mn⁴⁺ pairs formed in the delithiation process have been determined, together with that of the Mn³⁺-Mn³⁺ pairs. It shows that magnetic measurements are able to probe the distribution of Mn³⁺ and Mn⁴⁺ with more details than other techniques. The results are consistent with FTIR spectra, and indicate a random distribution of the Li ions that are removed from the matrix upon delithiation, which then undergo a diffusion process. Testing the material as cathode in lithium batteries revealed about 170 mAh g⁻¹ capacity, with a lower polarization and a high columbic efficiency, emphasizing the possibility of using this material as a cathode in Li-ion batteries.