EXPLOSIVE (SHOCK-WAVE) FABRICATION OF MONOLITHIC. METAL-MATRIX, SUPERCONDUCTING COMPOSITES

This paper describes the fabrication of superconducting, bulk prototypes by combining explosive welding and dynamic consolidation concepts to consolidate superconducting powder in conformal channel geometries, and bond these channels to an explosively welded metal matrix which encapsulates the consolidated superconductor. The resulting superconducting monolith represents a novel composite system dominated mechanically by the metal matrix which places the superconductor in an engineering environment. The key to successfully producing a working, bulk superconductor initially depends upon the ability to process high-quality, single-phase powders. We have begun to examine the characterization and quantification of such features in Yba₂Cu₃O₇ using X-ray diffraction. The prospects for fabricating novel, engineered superconducting composites using mixtures of superconducting powders and other powdered materials is examined.     

Field modulated microwave absorption in high Tcsuperconductors

Modified electron spin resonance (ESR) techniques were used to measure low-field (<200 Oe) microwave absorption of high-T _c cuprates YBa₂Cu₃O_7-x. A series of experiments on polycrystalline and single-crystal samples in which the angle between the DC and the modulating magnetic fields was varied showed that the microwave absorption obeys results predicted from thermodynamic considerations of fluxoids. The absorption takes place in the normal regions created by flux penetration at low fields in these samples. The change in magnetically modulated microwave absorption on passing through T_c is explained by the decrease in absorption that occurs when part of the sample becomes superconducting and by the rapid variation of the penetration depth near T_c. The technique is an extremely sensitive method of detecting superconductivity in very small samples and for studying the superconducting state. Possible applications such as microwave attenuators, magnetic memories, and gaussmeters are discussed     

Fabrication and Characterization of High- Tc Superconducting Continuous-Tube-Forming/Filling Bi(Pb)-2223/Ag Composites and Coils

'Sausaging,' 'blistering,' 'edge-cracking,' and other processing related problems are one of the major concerns facing all producers of high temperature superconducting composite conductors. These processing phenomena normally occur in composites prepared from the conventional pov/der-in-tube (PIT) technique. A manufacturing process that enables the production of long and truly continuous, uniform superconducting wires and tapes is the method of continuous tube forming/filling (CTFF). This method has been devised to minimize processing time and cost, as well as reducing all processing related defects in ceramic composites to a minimum. The feasibility of the process has been shown using(BiPb)₂Sr₂Ca₂Cu₃C₁₀ powder and silver sheath. Practicality has been demonstrated through the design and fabrication of double-pancake coils.     

Glass-free LTCC microwave dielectric ceramics

The sintering behavior, microstructure and microwave dielectric properties of complex pyrophosphate compounds AMP₂O₇ (A = Ca, Sr; M = Zn, Cu) were investigated in this paper. All compounds could be densified below the temperature of 950 °C without any glass addition, and exhibit low permittivity (_r < 8), high Q × f value and negative temperature coefficient of resonant frequency. The Q × f value was discussed from the point of view of bond strength. The chemical compatibility with silver and copper was also investigated. All compounds seriously react with silver at 700 °C. However SrZnP₂O₇ could be co-fired with copper in reduced atmosphere. The microwave dielectric properties of SrZnP₂O₇ sintered at 950 °C in reducing atmosphere are: _r = 7.06, Q × f = 52781 GHz, τ_f = −70 ppm/°C. In terms of its lower sintering temperature, chemical compatibility with copper and good microwave dielectric properties, SrZnP₂O₇ ceramic is very promising for low temperature co-fired ceramic (LTCC) applications.     

High-resolution and analytical transmission electron microscopy of epitaxial YBa2Cu3O7−x thin films and YBa2Cu3O7/PrBa2Cu3O7 superlattices

Transmission electron microscopy (TEM) studies of epitaxial YBa₂Cu₃O_7−x thin films and YBa₂Cu₃O₇/PrBa₂Cu₃O₇ superlattices are summarized. High-resolution imaging of cross-sections and plan views and energy-dispersive X-ray microanalysis and electron energy loss spectroscopy in the transmission electron microscope were the methods applied. In the first section results on YBa₂Cu₃O_7−x thin films With varying oxygen stoichiometry deposited onto SrTiO₃ are discussed. Then, YBa₂Cu₃O₇/PrBa₂Cu₃O₇ superlattices deposited onto SrTiO₃ and MgO are investigated. Finally, an interface analysis of high-quality YBa₂Cu₃O_7−x thin films deposited onto sapphire with yttrium-stabilized zirconia buffer layers is presented.     

Development of a microprocessor-based four probe DC resistivitysetup for Tc measurement of superconductingmaterials

The design of a microprocessor-based resistivity measurement system for high transition temperature (T_c) superconducting materials is described. This design includes interfacing an Intel 8085 microprocessor system with an IBM-compatible personal computer (PC) through RS-232C serial communication. This design is used to measure resistivity for superconducting samples of YBa₂Cu ₃O_7-x and strontium/potassium substituted YBa₂Cu₃O_7-x. A correction method is described for the parameters whose values are changing throughout the measurement period to minimize the measurement errors     

Evaporated YBa2Cu3O7 thin films and device technology

Epitaxial thin films of YBa₂Cu₃O₇ were grown by evaporation of the metals from electron-guns in the presence of atomic oxygen. The films were characterized structurally by X-ray diffraction and electrically by measurements of d.c. magnetization and flux creep. The progress in device technology is discussed. Results are presented on Josephson junctions, and a superconducting microwave filter with the ground plane grown on the back.     

Microwave penetration depth measurement for high Tcsuperconductors by dielectric resonators

The penetration depth λ(T) dependence on temperatures for high T_c superconducting YBa₂Cu₃O_7-δ thin films stored in various environments was measured by a well-designed microwave dielectric resonator. A d-wave T² dependence was observed at low temperatures, while an exponential dependence of the penetration depth λ(T) relevant to the s wave was detected as temperature increases due to thermal fluctuation. An abnormal upturn of the penetration depth at temperatures below 10 K attributed to the surface current carried by the defect surface-induced Andreev bound states can be apparently observed without applying heavy-ion bombardment from this relatively higher frequency measurement. Readers who endeavor to start this kind of measurement can use the well-modified dielectric cavity in conjunction with the detailed measuring procedure     

Normal metal, ohmic contacts to high-temperature superconducting YBa2Cu3O7-δ thin films suitable for multichip modules

Normal metal, ohmic contacts to high-temperature superconductor (HTSC) materials will be used to form via structures between HTSC interconnect levels, and also, substrate bonding pads in a superconducting multichip module (SMCM). Specific contact resistivities below 10⁻⁸ Ω cm² will be required for such contacts to control signal attenuation and local contact heating of the LN₂cooled SMCM. Previous work on normal metal/superconducting contacts has not focused on metallization schemes which will be stable during subsequent high-temperature processing. Metal contacts of gold, silver, and palladium were formed on superconducting thin films of YBa₂Cu₃O_7-δ via evaporation and sputtering through a shadow mask followed by annealing in various ambients and at several temperatures. Palladium contacts oxidized readily during anneal, and sputtered gold contacts required additional processing and exhibited higher specific contact resistivities. The best contacts were obtained by a controlled-cooling oxygen anneal of evaporated gold or silver, as indicated by normal-state specific contact resistivities of 3 × 10⁻⁵ Ω cm² and 4 × 10⁻⁵ Ω cm², respectively. This work differs from previously published results by describing contacts which required no extensive preparation of the HTSC surface and were stable to 700 °C, indicating these contacts would be compatible with subsequent high-temperature processing of the additional HTSC layers required in a multi-level SMCM.     

低密度Fe3O4/中孔炭微球复合材料的可规模制备及吸波性能

采用喷雾干燥法制备出中孔炭微球(MCMSs), 进一步通过液相浸渍得到磁性Fe₃O₄/MCMSs纳米复合材料, 系统研究了复合材料的形貌结构和吸波性能。结果发现, Fe₃O₄/MCMSs复合材料具有优异的流动性和低密度(0.24~0.33 g/cm³)特征, 其中Fe₃O₄纳米颗粒高度分散在MCMSs中孔孔道内。复合材料具有较高的比表面积(548~735 m²/g), 可以促进多种介电弛豫的形成。在2~18 GHz范围内, 复合材料以介电损耗为主, 在12.6 GHz处具有最大反射率-25 dB, 小于-10 dB的带宽达4.7 GHz。复合材料优异的吸波性能可以归因于均相分布的Fe₃O₄纳米颗粒和中孔炭微球的协同作用, 在增大界面弛豫和电磁波散射的同时, 改善了阻抗匹配, 减少了电磁波在吸波层表面的反射。     

CoFe2O4-Co3Fe7纳米粒子及CoFe2O4/多孔碳的制备及其电磁性能研究

在5% H₂+95% N₂气氛下,还原CoFe₂O₄纳米粒子制备了CoFe₂O₄-Co₃Fe₇纳米粒子;以焙烧黄麻纤维得到的多孔碳纤维为碳源用水热法将CoFe₂O₄纳米粒子负载到多孔碳中,制备出CoFe₂O₄/多孔碳。使用X射线衍射仪、扫描电子显微镜、透射电子显微镜、拉曼光谱仪、同步热分析仪等手段对材料进行表征,并使用矢量网络分析仪测量了复合材料的电磁参数和微波吸收性能。结果表明,CoFe₂O₄-Co₃Fe₇纳米粒子和CoFe₂O₄/多孔碳的微波吸收性能明显优于CoFe₂O₄纳米粒子。CoFe₂O₄-Co₃Fe₇纳米粒子的有效频宽(反射损耗<-10 dB的频率宽度)可达4.8 GHz。CoFe₂O₄/多孔碳的有效频宽可达6 GHz,覆盖了整个Ku波段(12~18 GHz)。这些材料优异的微波吸收性能,可归因于合适的介电常数、大的介电损耗、多孔结构以及介电损耗和磁损耗的协同作用。     

低损耗ZrTi2O6填充PTFE复合基板性能

采用热压成型工艺,制备了一种低损耗ZrTi₂O₆陶瓷填充聚四氟乙烯（PTFE）的新型微波复合基板材料。采用介质谐振器法研究了ZrTi₂O₆/PTFE复合材料的微波介电性能（8~12 GHz）。结果表明,ZrTi₂O₆/PTFE复合材料的相对介电常数（ε _r）和介电损耗（tanδ）随着ZrTi₂O₆陶瓷体积分数（0~46%）的增加而增大,介电常数实验值与Lichtenecker模型预测值最吻合。ZrTi₂O₆/PTFE复合材料的热膨胀系数和介电常数温度系数随着ZrTi₂O₆陶瓷体积分数的增加而减小。46%的ZrTi₂O₆为较优填料比例,ZrTi₂O₆/PTFE的相对介电常数为7.42,介电损耗为0.0022（10 GHz）。     

单壁碳纳米管-CoFe2O4双层复合材料的微波吸收特性

通过直流电弧放电法制备了高结晶性单壁碳纳米管（SWCNTs）,采用溶胶凝胶自燃法制备CoFe₂O₄,并将两种材料复合制成SWCNTs-CoFe₂O₄双层吸波材料。使用Raman光谱、XRD、SEM、TEM和矢量网络分析仪对SWCNTs和CoFe₂O₄的形貌、结构和电磁性能进行了表征,并利用传输线理论分析了SWCNTs-CoFe₂O₄双层吸波材料在2~18 GHz频带内的微波吸收性能。结果表明,相对于单一材料,SWCNTs-CoFe₂O₄双层复合材料的吸波性能得到了极大提高。当CoFe₂O₄作为匹配层、SWCNTs作为吸收层时,通过调节匹配层和吸收层的厚度,SWCNTs-CoFe₂O₄双层复合材料的最强反射损耗可以达到-61.13 dB,低于-10 dB的吸收带宽达到7 GHz （8~15 GHz）。因此,SWCNTs-CoFe₂O₄双层复合材料是一种新型的有应用前景的高吸收宽频带吸波材料。     

Ultrafast response of superconducting transmission lines

The authors report investigations of picosecond transient propagation on normal and superconducting transmission lines and results of a variety of lines that include YBa₂Cu₃O_7-x (YBCO) coplanar lines, a superconducting coaxial cable, and a dielectric-matched gold-line structure. A previously developed algorithm for analyzing transient propagation was used to identify the dominant mechanisms for signal distortion in most of these cases, and the essential properties of all tested to date are summarized for a direct comparison     

分层式前驱坯体对YBCO单畴块材生长和磁通性能的影响

Y-Ba-Cu-O(YBCO)单畴块材通常是由统一分布的YBa₂Cu₃O_7-δ(Y123)和Y₂BaCuO₅(Y211)前驱坯体制备的。然而研究表明熔融生长的超导块材中Y211相粒子的浓度随着远离籽晶显著增大, 造成Y211相粒子的积聚以及限制单畴块材的超导性能。本文通过顶部籽晶熔融织构法(TSMTG)利用分层式前驱坯体制备了φ23 mm×9 mm的YBCO单畴块材, 并在生长形貌、微结构以及磁通俘获性能方面与常规方法制备的同尺寸YBCO单畴块材做了对比研究。研究结果显示, 使用分层式前驱坯体制备的YBCO单畴块材生长得更充分, Y211相粒子的平均粒径更小、分布更均匀, 并且在磁通俘获性能上有了显著的提高, 同时具备高对称性的磁通分布和强磁通俘获能力, 在77 K环境下最大磁通俘获场高达0.91 T。该结果对进一步提高YBCO超导块材的性能具有很好的参考价值。     

CNTs添加对Cu-Al2O3复合材料耐电弧侵蚀性能的影响

Cu-Al₂O₃复合材料具有优异的传导性能和力学性能,在耐磨材料领域具有广阔的应用前景。为进一步提升电摩擦条件下复合材料的耐电弧侵蚀性能,本文采用内氧化法与粉末冶金法相结合制备了不同碳纳米管(CNTs)含量的CNTs/Cu-Al₂O₃复合材料,观察了CNTs/Cu-Al₂O₃复合材料中增强相的分布及其与基体界面结合情况,研究了添加不同含量CNTs对Cu-Al₂O₃复合材料传导性能和力学性能的影响,重点探究了CNTs/Cu-Al₂O₃复合材料的耐电弧侵蚀机制。结果表明：原位生成的纳米Al2O3颗粒钉扎位错及对CNTs分布具有调控作用,使CNTs弥散分布在铜基体中。与Cu-Al₂O₃复合材料相比,CNTs/Cu-Al₂O₃复合材料燃弧时间和燃弧能量明显降低,波动更平稳。在电弧侵蚀过程中,...     

Grain size dependence of low field microwave absorption in Y1Ba2Cu3O7 powders

The authors report investigations on the influence of low (≲65 Oe) magnetic fields on microwave absorption in several Y₁ Ba₂Cu₃O₇ powders at 2, 10, 22, and 35 GHz at temperatures varying between 1.3 K and 77 K. Even powders which show negligible zero-field absorption have a significant induced absorption at low fields. At low T there is a large frequency-dependent magnetic hysteresis in the field-induced absorption     

添加La_2O_3对搅拌摩擦加工制备Ni/Al复合材料组织和性能的影响

采用搅拌摩擦加工(FSP)方法在Al基体中添加微米级Ni粉及(Ni+La_2O_3)混合粉末,制备Ni/Al及(Ni+La_2O_3)/Al复合材料。采用SEM、EDS及XRD对复合区微观结构及相组成进行分析,采用室温拉伸试验对Ni/Al、(Ni+La_2O_3)/Al复合材料力学性能进行了测试。结果表明:Ni/Al复合材料中主要成分为Al、Al3Ni和Ni粉团聚物,Ni粉团聚物尺寸粗大,形貌呈壳-核结构,核为团聚的Ni,壳为Al3Ni增强相层;La_2O_3对Al-Ni原位反应有较大影响,能够强化Al-Ni原位反应,生成更多增强相;La_2O_3阻碍了Ni粉的相互吸附和聚拢行为,从而减少了团聚现象;(Ni+La_2O_3)/Al复合材料的抗拉强度可以达到186 MPa,与Al基体(抗拉强度72 MPa)、纯Al FSP(抗拉强度90 MPa)、Ni/Al复合材料(抗拉强度144 MPa)相比,其抗拉强度分别提高了158%、107%、29%。     

Bi2O3助熔剂对CaO-B2O3-SiO2/Al2O3玻璃陶瓷复合材料性能的影响

以CaO-B₂O₃-SiO₂(CBS)玻璃粉体和Al₂O₃陶瓷粉体为原料,通过在CBS与Al₂O₃的质量比固定为50:50的玻璃-陶瓷复合材料中添加适量的Bi₂O₃作为烧结助熔剂,探讨了Bi₂O₃助熔剂对CBS/Al₂O₃复合材料的烧结性能、介电性能、抗弯强度和热膨胀系数的影响规律.研究表明:Bi₂O₃助熔剂能通过降低CBS玻璃的转变温度和黏度促进CBS/Al₂O₃复合材料的致密化进程,于880 ℃下烧结即能获得结构较致密、气孔较少的CBS/Al₂O₃复合材料.然而,过量添加Bi₂O₃将使玻璃的黏度过低,从而恶化CBS/Al₂O₃复合材料的烧结性能、介电性能及抗弯强度.当Bi₂O₃的添加量为CBS/Al₂O₃复合材料的1.5wt%时,于880 ℃下烧结即能获得最为致密的CBS/Al₂O₃复合材料,密度为2.82 g·cm^-3,这一材料具有良好的介电性能(介电常数为7.21,介电损耗为1.06×10^-3),抗弯强度为190.34 MPa,0~300 ℃的热膨胀系数为3.52×10^-6 K^-1.     

稀土氧化物对SPS烧结AlN陶瓷电性能的影响

以AlN粉末为原料, 添加稀土氧化物(Sm₂O₃、Y₂O₃), 在氮气气氛下, 采用SPS烧结方法制备AlN陶瓷, 研究稀土氧化物的掺杂对AlN烧结试样相组成、微观结构和电性能的影响。实验表明: Sm₂O₃、Y₂O₃与Al₂O₃反应生成的液相稀土金属铝酸盐会提高AlN陶瓷致密度, 且在晶界处形成导电通路降低了AlN陶瓷电阻率。随着Sm₂O₃掺杂量的增加, 晶界相逐渐由Sm₄Al₂O₉过渡到SmAlO₃, 且Sm₄Al₂O₉对电阻率贡献最大。其中, 3wt% Sm₂O₃掺杂AlN陶瓷电阻率最低, 为