高性能Y_(0.5)Gd_(0.5)BCO薄膜的研究

通过在YBCO前驱溶液中加入醋酸钆(Gd(CH_3COO)_3),使元素Gd部分取代Y,成功地制备了Y_(0.5)Gd_(0.5)BCO薄膜,该薄膜成分单一且具有很好的c轴取向.通过对Y_(0.5)Gd_(0.5)BCO薄膜和YBCO、GdBCO薄膜的超导性能比较发现,虽然Y_(0.5)Gd_(0.5)BCO薄膜的临界转变温度(T_c)(约为90.5 K)较YBCO和GdBCO薄膜有所下降,但是在65K、自场下,Y_(0.5)Gd_(0.5)BCO薄膜具有最高的临界电流密度(J_c)值,为4.87MA/cm~2.且随着外加磁场的增加,J_c值提高的较多.在3T的磁场下,Y_(0.5)Gd_(0.5)BCO薄膜的J_c值分别是纯GdBCO和YBCO薄膜的1.8倍和5.1倍.此外,替代还有效提高了薄膜的磁通钉扎力.     

Rapid preparation of the nitrate P YBCO superconductive film by AD solution deposition

用硝酸盐高分子辅助沉积法（简称PAD）来制备YB2C3O7-x（YBCO）超导薄膜,有着制备速度快、工艺简单和无环境污染等优点。采用硝酸盐水相前驱液,并加入高分子螯合剂和薄膜改性剂,然后将前驱液涂覆在LaAlO3（LAO）单基晶片上,采用快速低温分解,再经过高温烧结制备出完整的YBCO超导薄膜。在1.0×10-4 O2/N2气氛下制备的YBCO超导薄膜致密,YBCO（00l）峰取向明显,没有其它杂相峰,同时,转变起始温度TC=91K,转变宽度ΔTC=2K;在77K、自场下临界电流密度JC为约1MA/cm2。实验结果表明,采用硝酸盐PAD法的低温分解时间比传统的TFA-MOD法缩短9h左右,而且制备出的YBCO超导薄膜性能优良,该方法为以后的长带生产提供了一种新的制备技术。     

YBa2Cu3O7-δ薄膜的BaCl2/BaF2-MOD法制备及超导特性研究

传统三氟乙酸金属有机化学溶液沉积法(TFA-MOD)制备YBa₂Cu₃O_7-δ (YBCO)超导层,Ba倾向于与F结合,从而避免BaCO₃的形成。本工作开展了新型基于BaCl₂/BaF₂途径的化学溶液法生长YBCO超导薄膜的研究。重点研究了添加Cl对YBCO薄膜晶粒取向、微观结构和超导性能的影响,并通过生长反应的热化学计算,分析了BaCl₂途径YBCO薄膜的物相转变机制。结果表明:添加Cl有利于抑制a轴晶粒取向,促进c轴晶粒成核。添加Cl的YBCO双层膜起始转变温度(Tc-onset)没有明显变化,约为89.6 K,其临界电流密度(Jc)显著提升, Jc达到2.07 MA/cm²(77K,自场)。此外,生长反应过程的物相转变分析表明Cl优先与Ba结合形成BaCl₂,有效避免BaCO₃的形成。本研究结果表明:添加Cl对制备YBCO超导厚膜有促进作用,这为MOD法制备YBC...     

YBCO覆膜导体低成本制备研究

报道新近发展的离子束结构改性(ISM)技术以及同步织构(STEX)技术在YBCO覆膜导体制备中的最新进展。采用TFA-MOD工艺成功的在LaAlO_3(100)衬底上制备出了临界电流密度高达6.5 MA/cm~2 (77K,0T)的YBCO超导薄膜,其超导转变温度接近91K;同时还在LaAlO_3(100)衬底上成功地采用溶胶-凝胶工艺制备出了具有高度外延双轴织构取向的SrTiO_3缓冲层材料;在YSZ(100)衬底上采用溶胶-凝胶工艺制备出了具有高度双轴织构取向的CeO_2缓冲层材料。随后在这两种衬底上采用TFA-MOD工艺沉积的YBCO超导薄膜也获得了超过1MA/cm~2(77K,0T)的临界电流密度。作为制备实用化YBCO超导带材的新路线,在数厘米长的IBAD-YSZ/Hastelloy金属基带模板上,采用低成本化学溶液方法依次制备出了高质量的CeO_2缓冲层和YBCO超导薄膜,获得了高达1.2MA/cm~2(77K,0T)的临界电流密度。为长超导带材的制备打下了很好的基础。提出了在金属基带上制备YBCO覆膜导体的新方法一同步织构(STEX)法。用该方法可以有效解决RABiTS方法中的金属基带热处理变软...     

低氟MOD法制备Zr掺杂YBCO薄膜的研究

在金属有机盐沉积（MOD）法制备YBCO薄膜的工艺中, 采用无F的α甲基丙烯酸铜取代原来的三氟乙酸铜, 可以降低前驱溶液中大约50%的氟含量. 研究表明, 该方法大大缩短了YBCO前驱薄膜受热分解的时间, 仅为原来的1/7. 通过XRD、SEM分析发现, 该方法可以制备成分单一、具有良好立方织构的YBCO薄膜, 且薄膜表面平整致密, 没有裂纹, 临界温度(T_c)达到了90K左右, 77K、自场下的临街电流密度(J_c)达到了2.84MA/cm². 通过在制备的YBCO薄膜中引入6mol% 的 Zr元素掺杂, 有效地提高了YBCO薄膜在外加磁场下的超导性能.     

前驱液中添加聚乙烯吡咯烷酮对YBa2Cu3O7-δ膜形貌和性能的影响

用三氟乙酸金属有机物沉积(TFA-MOD)方法在LaAlO3(100)基底上生长YBa2Cu3O7-δ(YBCO)超导薄膜,研究了向前驱液中添加聚乙烯吡咯烷酮(PVP)对YBCO薄膜微结构和超导性能的影响.涂膜在氧气环境中进行200～250℃热解,再经775℃氩气环境下结晶后获得YBCO超导薄膜.在相同热处理条件下,未添加PVP的前驱液制得的YBCO薄膜临界电流密度为4050A/cm2,添加PVP的前驱液制得的YBCO薄膜临界电流密度为5800A/cm2.后者表现出较少的孔洞,较强的c轴取向,较纯的双轴织构和较高的临界电流密度.因此,向前驱液中添加PVP的化学方法可以改进YBCO涂层导体的MOD制备过程.总压,氧分压和热处理温度等工艺条件将进一步优化,以提高临界电流密度.     

低温热处理条件对TFA-MOD方法制备的YBCO薄膜的影响研究

目前，三氟乙酸．金属有机沉积（简称TFA-MOD）方法是制备YBaECU307-6（简称YBCO）涂层导体最有应用前景的方法之一。系统地研究了TFA-MOD过程中低温热处理条件（升温速率和气氛）对在LaAlO3单晶基片上生长的YBCO薄膜的影响。研究结果表明，低温热处理的气氛为纯02时，200～250℃区间的分解速度不能太快，否则YBCO薄膜就不均匀和致密，薄膜中会出现较多的孔洞，薄膜的面外取向性也较差，从而影响薄膜的超导性能，然而过慢的分解速度也会使薄膜表面有较大的CuO析出物。分解速度为0．08℃／min时才可以得到结构和超导性能良好的YBCO薄膜。同时研究也发现在低温热处理过程中如果采用Ar和2．5％O2混合气氛则可以减弱三氟乙酸盐分解的剧烈程度，从而使低温热处理的分解速度提高到0．8℃／min，得到的YBCO薄膜同样具有较好的面外取向性和超导性能。     

衬底温度对掺锆酸钡高温超导YBCO薄膜结构和超导电性能的影响

高温超导氧化物YBCO外延薄膜在掺入少量锆酸钡(BaZrO3,BZO)后,其超导性能会得到较大幅度的提高.研究了不同衬底温度对掺BZO的YBCO薄膜的外延特性及超导性能的影响.以固相反应法制备了YBCO及BZO原材料,利用固相烧结工艺制备了BZO含量为2%(质量分数)的YBCO-BZO复合靶材,采用脉冲激光沉积技术(PLD)在LaAlO3(100)基片上外延生长YBCO薄膜.以不同的衬底温度制备了YBCO薄膜,用X射线衍射和高分辨透射电子显微技术对所制备的YBCO薄膜的外延特性进行了分析.最后比较了在不同衬底温度下制备的YBCO薄膜的超导性能,得到了最佳衬底温度.     

Ce掺杂ZnO光催化剂的制备及性能

采用共沉淀制备了稀土Ce掺杂ZnO光催化剂;利用X射线衍射（XRD）、扫描电子显微镜（SEM）等对光催化剂进行表征;考察了不同NaOH用量制备的催化剂光催化对亚甲基蓝脱色降解性能的影响。结果表明,ce的掺杂有利于抑制光生电子-空穴的复合,显著提高ZnO的光催化性;NaOH用量和Ce掺杂量对光催化剂的微观形貌和光催化活性有较大影响;制备过程中金属离子总量（Ce^3＋＋Zn^2＋）与OH-摩尔比为1：2．5,掺杂量为2％（摩尔分数）时,制备的催化剂主要微观形貌为具有层状微球结构,光催化性能良好。     

YBCO外延薄膜的 afterglow plasma溅射生长

Y1Ba2Cu3O7-δ（YBCO)高温超导薄膜溅射生长所遇到的主要问题是负氧离子的反溅射效应。采用afterglow plasma溅射生长YBCO薄膜，有效地抑制了负氧离子的反溅射效应，从而生长出了超导性质优导的YBCO单晶薄膜，薄膜的临界电流密度Jc(77K,10GHz)＝206μΩ，薄膜（005）峰摇摆曲线半高宽（FWHM）为0．12^0。     

Enhanced Flux Pinning Properties of BaZrO3-doped YBCO Films Grown by Pulsed Laser Deposition on LaAlO3(100) Substrates Decorated with Y2O3 Nanoislands

In this work, we intend to investigate the interaction between two types of nanoscaled artificial pinning centers and their pinning properties in YBCO thin films grown by pulsed laser deposition technique. The two types of artificial pinning centers were prepared in different processes, (1) Y₂O₃ nanoislands decorated on substrates prior to the deposition of YBCO thin film, and (2) BaZrO₃ nanoparticles self-assembled within YBCO matrix during the deposition of YBCO thin film. We compared the transport characteristics of the YBCO thin films containing these two types of artificial pinning centers with those of pure YBCO thin films grown on decorated substrates and BZO-doped YBCO thin films grown on undecorated substrates. It was found that these two types of artificial pinning centers, which are simultaneously present, acted constructively to enhance the pinning properties of YBCO thin films.     

Metal doping effects in NIR Raman spectra of YBCO epitaxial films

Metal doping (Co, Zn) of YBCO epitaxial thin films leads to large changes of the scattering efficiencies of various lattice modes in near-infrared (NIR) -Raman spectra (1064 nm) if it is accompanied by a variation of the charge carrier concentration. The results resemble earlier observations in oxygen depleted YBCO thin films. In contrast, no effect is found when metal doping does not change the carrier concentration even if it leads to a massive T_c suppression.     

温度控制织构金属基带上YBCO外延薄膜生长及缺陷研究

采用直流溅射法在Y₂O₃/YSZ/CeO₂(YYC)缓冲层的织构NiW基带上, 通过基片温度调制YBa₂Cu₃O_7-δ(YBCO)外延薄膜生长。X射线衍射仪(XRD)表征显示, 基片温度强烈地影响YBCO薄膜的外延生长: 在较低的基片温度下薄膜趋于a轴取向生长, 随基片温度升高薄膜逐渐变为纯c轴取向生长。由于a轴晶粒引起的大角度晶界会阻碍超导电流在a-b面内的传输, 因此YBCO薄膜的微观结构和超导电性能随温度升高而得到改善, 但是随着基片温度继续升高, 基带的氧化程度加剧, YBCO与缓冲层间发生界面反应, 从而导致薄膜质量衰退。本     

Ni2+掺杂ZnO薄膜及粉体的结构和发光性能研究

采用激光脉冲沉积法,用XeCl准分子激光器在Si (100)基片、真空和5Pa氧气气氛下制备了Ni2+(0.8％(原子分数))掺杂的呈六角纤锌矿结构的ZnO薄膜.氧气气氛下制备的薄膜沿(002)取向生长,表面比较平整,平均颗粒尺寸为80nm.真空条件下制备的薄膜出现Zn2SiO4杂相,平均颗粒尺寸为150nm.和真空条件下制备的薄膜相比,氧气气氛下制备的薄膜具有较强的ZnO本征发光,在425nm附近出现由于填隙Zn缺陷引起的较宽的蓝光发光带,并且在482nm处出现了由于氧空位和氧间隙间的转换引起的较强的蓝光发光峰,同时由于氧缺陷引起的449nm附近的蓝光发光峰强度明显降低.     

MOCVD-grown homoepitaxial YBa2Cu3Ox thin films and its multilayers

YBa₂Cu₃O _x (YBCO) films, Zn-doped YBCO (YBCO : Zn) films, and their bilayers have been epitaxially grown on SrTiO₃(100) and single-crystal YBCO(001) substrates by metalorganic chemical vapour deposition. The YBCO(001) films homoepitaxially grown on YBCO(001) substrates have flat surfaces on an atomic scale, and interfaces free from crystalline defects. We can systematically reduce the superconducting transition temperature (T _c) of YBCO : Zn films from 90 K to 37 K by increasing Zn concentration. The bilayers have a sharp distribution of Zn as evaluated fromT _c measurements of the upper YBCO films and depth profiles of secondary ion mass spectrometer, suggesting the possibility to form the homoepitaxial SNS (S, superconductor; N, normal metal) junction operatable between 40 K and 90 K.     

Effect of PrBa2Cu3O7−x buffer layer thickness on the properties of YBa2Cu3O7−x thin films grown on sapphire by laser ablation

Superconducting YBa₂Cu₃O_7?x (YBCO) thin films were deposited onr-plane A1₂O₃ substrates with PrBa₂Cu₃O_7?x (PBCO) buffer layer by XeCl excimer laser ablation. The thickness of PBCO buffer layer was systematically changed to investigate the superconducting properties of YBCO thin films on sapphire. The structure and surface morphology of the films were characterized by X-ray diffraction and scanning electron microscopy (SEM). Superconducting transition temperatures were varied depending on the buffer layer thickness. Interdiffusion between laser-ablated YBCO thin films and A1₂O₃ substrates had been studied by Auger electron spectroscopy (AES). The results of this study show that diffusion does not occur between the YBCO thin film and the substrate even with 20 Å thick PBCO buffer layer.     

Pulsed Laser Deposition of YBa2Cu3O7 Superconducting Film on MgO Templates Spray Pyrolyzed on Hastelloy C276

Pulsed laser deposition (PLD) was used to deposit YBCO on MgO-buffered C276 substrates in order to evaluate the quality of the deposited MgO films which were deposited by spray pyrolysis. The characterization of the thin films was done using scanning electron microscopy, atomic force microscopy, electron backscattered diffraction, X-ray diffraction 2??-scans, rocking curve (??-scans), phi scan, pole-figure measurements, and AC susceptibility. It was found that c-axis oriented YBCO films were grown on c-axis oriented MgO films which confirm that the deposited YBCO films copied the out-of-plane texture of the spray pyrolyzed MgO buffer. However, MgO and YBCO films have a very weak in-plane texture. The AC susceptibility measurements show that the YBCO films have a broad superconducting transition temperature which may be attributed to the weak in-plane texture.     

Effect of PrBa2Cu3O7?x buffer layer thickness on the properties of YBa2Cu3O7?x thin films grown on sapphire by laser ablation

Superconducting YBa₂Cu₃O_7–x (YBCO) thin films were deposited onr-plane A1₂O₃ substrates with PrBa₂Cu₃O_7–x (PBCO) buffer layer by XeCl excimer laser ablation. The thickness of PBCO buffer layer was systematically changed to investigate the superconducting properties of YBCO thin films on sapphire. The structure and surface morphology of the films were characterized by X-ray diffraction and scanning electron microscopy (SEM). Superconducting transition temperatures were varied depending on the buffer layer thickness. Interdiffusion between laser-ablated YBCO thin films and A1₂O₃ substrates had been studied by Auger electron spectroscopy (AES). The results of this study show that diffusion does not occur between the YBCO thin film and the substrate even with 20 Å thick PBCO buffer layer.     

Silver doping: A potential means to grow high quality YBa2Cu3O7?x thin films on bare sapphire

High qualityAg-doped YBa₂Cu₃O_7–x (YBCO) thin films have been grown by laser ablation on ¯1012 bare sapphire. This work demonstrates thatAg-doping can be used as very convenient means to realize good quality YBCO films on highly coveted sapphire substrates for microwave applications of highT _c thin films.