柔性有机发光器件封装材料气体渗透率的质谱法测量

柔性有机电致发光器件(FOLED)封装材料的研究已成为目前国内外FOLED研究的热点。如何测量水蒸汽、氧气和其他活性气体对FOLED封装材料的渗透率, 是FOLED封装材料研究的一个重要课题。提出用质谱分析技术解决柔性有机电致发光器件封装材料气体渗透率的测量问题, 建立了一个封装材料渗透率的质谱法测量系统。介绍了该系统的原理, 利用该系统测量了水蒸汽、氧气和二氧化碳等气体对PET塑料, 以及水蒸汽对ITO薄膜、银薄膜等材料的渗透率。所获得的实验结果与其他文献报道的数据进行了比较, 证明质谱法测量的结果是可信的。     

电泳法制备平栅极碳纳米管场发射阴极及场发射特性研究

采用电泳法在ITO玻璃基板上选择性制备了碳纳米管(CNTs)阴极薄膜,采用电子扫描(SEM)分析了CNTs薄膜的表面形貌,并测试了碳纳米管阴极的场致发射特性.结果表明,利用电泳法制得的碳纳米管阴极薄膜均匀性、致密性良好,且具有较大发射电流密度;通过控制共面栅控CNTs场发射阴极的栅极电位能够有效控制阴极的场发射电流密度...     

应用TracePro光学仿真技术研究FOLED出光率

设计了结构为"基板/ITO/有机发光层/金属阴极"的可弯曲式(柔性)有机电致发光器件(FOLED),利用TracePro光学软件对FOLED在平整和弯曲时的出光情况作了仿真,得到了器件在两种情况下的照度图和发光强度分布图。研究发现:在弯曲时,器件出射光的光通量、照度、发光效率都要比平整时大;同时发现器件在平整和弯曲两种情况下,出射光的发光强度随角度分布情况也不一样。对这些变化从理论上作了解释。     

高亮度场发射荧光灯的制备及其性能测试

利用圆柱形结构的增强效应能提高丝状阴极场发射性能的这个特性,设计了场发射荧光灯.采用热敷法将配制好的碳纳米管(Carbon Nanotubes,CNT)浆料转移到镍丝(Ni)表面制备成丝状阴极,以及溶胶-凝胶法在圆柱形玻璃管内壁制备掺锡氧化铟(Indium Tin Oxide,ITO)薄膜作为阳极,制作场发射荧光灯.测...     

柔性有机电致发光器件衬底阻透性能的测试方法

FOLED被认为是最具发展前景的下一代显示技术之一,但由于H2O、O2等有害气体的侵蚀,FOLED器件很难达到商用显示器件的最低使用寿命标准(1×104 h).虽然在柔性衬底上制备保护层是延长器件使用寿命的有效方法,但目前为止,还没有商用测试仪器可以评价保护层对H2O、O2等有害气体的阻隔性能.介绍了几种测试H2O、O2渗透率的方法,及它们在评价FOLED衬底保护层阻隔性能方面的应用.     

基于PEN柔性衬底的顶发射微腔OLED性能研究

设计了结构为Ag/MoOx空穴注入层(HIL)/有机层/LiF/Al/Ag/Alq3的柔性有机电致发光器件(FOLED),研究通过改变HIL层的厚度改变腔长实现对微腔效应的调节,制备了性能优化的微腔FOLED。通过器件性能的对比,得到了可用Ag作为反射阳极的顶发射微腔FOLED全彩显示器件优化结构,即蓝、绿和红FOLED对应的优化HIL层厚度分别为100nm、120nm和160nm。     

PET柔性衬底上低温沉积ITO薄膜性能的研究

采用反应热蒸发的方法,在聚对苯二甲酸乙二醇酯(PET)塑料衬底上制备In2O3:Sn(ITO)薄膜.鉴于塑料对温度的敏感性,详细研究了衬底温度对其上沉积的ITO薄膜的微观结构及光电性能的影响,在低温条件下(Ts=140℃)获得电阻率为7.52×10-4Ωcm,可见光范围内的透过率大于80%和结构特性良好的薄膜,并将其应用于PIN型太阳电池的前电极,获得了转换效率为4.41%的柔性非晶硅(a-Si)薄膜太阳电池.     

应用于液晶显示器的场发射背光源制备

对应用于LCD的不同于传统管状背光源的新型面状场发射背光源(FE-BLU)的制备技术进行了研究.将表面改性碳纳米管(CNTs)丝网印刷于金属Ag精细电极上形成碳纳米管阴极,利用透射电镜与扫描电镜表征了CNTs及阴极的表面形貌.采用有机溶剂高压气流法对阴极进行表面处理,并真空封装成25.4 cm(10 in)的CNTs FE-BLU器件.测试结果表明,表面处理后阴极场发射电流密度得到明显提高,器件亮度可达5 860 cd/m2,均匀性为82%,持续发射35 h后,发射电流无明显衰减.     

n-i-p型非晶硅太阳电池中p/ITO界面特性研究

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备n-i-p型非晶硅(a-Si)太阳电池,采用反应热蒸发法制备ITO薄膜作为太阳电池的前电极。通过改变B2H6的掺杂浓度获得了不同晶化率的p层,详细研究了p层性能对p/ITO界面特性以及电池性能的影响。结果表明,在合适晶化率的p层上沉积ITO薄膜有利于优化p/ITO界面的接触特性,将其应用于n-i-p型a-Si太阳电池,能够显著改善电池的开路电压(Voc)和填充因子(FF),最终,在不锈钢(SS)衬底上获得了转换效率为6.57%的单结a-Si太阳电池。     

OLED封装技术进展

有机电致发光器件(OLED)因具有较多的优点,在显示领域有着光明的前景,其最大的优越性在于能够实现柔性显示,制作成柔性有机电致发光二极管(FOLED).OLED对水蒸气和氧气非常敏感,渗透进入器件内部的水蒸气和氧气是影响OLED寿命的主要因素,因此,封装技术对器件非常重要.对现有的主要的FOLED衬底材料和封装方法进行...     

采用碳纳米管导电薄膜作为OLED的阳极

采用碳纳米管(CNT)替代ITO作为OLED阳极可以 解决ITO薄膜存在的可弯曲性能差,可靠性低等缺 点,使得柔性显示成为可能。本文采用混合型CNT导电薄膜作为阳极,探讨了CNT薄膜的制备 工艺、掺 杂方式及表面修饰等因素对绿光OLED性能的影响。实验结果表明,P型掺杂对CNT薄 膜的导电性能影响 有限;而PEDOT修饰层可以很好的提高CNT导电薄膜的平整度;此外,采用“十字交叉 ”的阳极形状有助于降低 阳极拐角处毛刺。通过优化器件各参数,制备的PET/CNTs/PEDOT/NPB/ALq₃/LiF/Al绿光OL ED发光效率达 到了195 cd/m²,结果表明采用混合型CNT作为OLED阳极是可行的。     

基于碳纳米管的微纳机电器件应用研究

综述了近年来碳纳米管在微纳传感器、纳米发电机、纳米执行器、纳米电子器件、纳米收音机与薄膜扬声器等方面取得的瞩目成果及典型应用,介绍了基于碳纳米管的微纳机电器件的制造工艺、器件性能及其研究进展,指出了碳纳米管基微纳机电器件在多元化发展、工艺多样化、材料复合化、产业化工程等方面的发展趋势。     

纳米线、纳米管器件在逻辑电路中的应用

本文报导了几种以碳纳米管和半导体纳米线为基础的电子器件和逻辑电路，如：碳纳米管场效应管、纳米线逻辑门电路等。同时，通过比较传统半导体器件和纳米器件，分析了这些纳米器件的特点。在室温下，这几种纳米电子器件和电路均有良好的电学特性。     

纳电子器件制备的单根碳纳米管精确装配与电连接研究

目前,利用单根碳纳米管进行纳电子器件的研制成为纳电子学界研究的前沿与热点,但在纳电子器件研制过程中,如何实现单根碳纳米管与微电极的精确装配与电连接成为关键技术难题之一。为探索实现此关键技术的新方法,本文尝试将介电电泳与具有实时力,视觉反馈的原子力显微镜操作方法相结合,从而结合粗、精两级操作方式,来实现单根碳纳米管的精确装配与电连接。单根多壁碳纳米管的精确装配与电特性测试实验验证了该方法的有效性,从而为装配研制基于单根纳米管,线的纳电子器件提供了一种新颖可行的方法。     

Field emission of vertically-aligned carbon nanotube arrays grown on porous silicon substrate

Vertically aligned arrays of multi-walled carbon nanotubes were grown by pyrolysis of acetylene on iron catalytic particles within a porous silicon template via chemical vapor deposition (CVD) at 700 °C. Using this method ordered nanotubes with diameters from 75 to 100 nm could be produced. The diode configuration field emission of the CNT arrays were performed and the onset electric field is 4 V/μm and the emission current can approach 1 mA/cm² at a electric field of 9.5 V/μm. The enhancement factor of the CNT arrays (4012) is derived from the F–N plot of the experiment data. To demonstrate the uniformity of the field emission, an ITO glass substrate with phosphor coated is used as anode in the field emission experiment. The average fluctuation of the emission current density was less than 5%. The result shows that the field emission of the CNT arrays on the silicon substrate is very uniform. These carbon nanotube arrays are useful for applications in field emission displays and sensors. The fabrication method shows the feasibility of integration between carbon nanotube arrays and silicon microelectronics.     

印刷碳纳米管薄膜场发射失效行为研究

对基于印刷碳纳米管（CNT）薄膜的场发射器件的失效行为进行了研究。微观分析结果表明，器件失效主要是由真空击穿对CNT和导电衬底造成损坏所引起的。印刷CNT薄膜中存在的CNT团聚颗粒所造成的正反馈的发热和电流增加导致了真空击穿的发生。通过在真空室中对印刷CNT薄膜进行场发射条件下的老炼处理，有效地预防了真空击穿的发生，并使薄膜的场发射均匀性得到提高，证实了真空老炼对预防真空击穿和提高器件工作可靠性的作用。     

Leaf‐like Graphene Oxide with a Carbon Nanotube Midrib and Its Application in Energy Storage Devices

Graphene oxide (GO) has recently attracted a great deal of attention because of its heterogeneous chemical and electronic structures and its consequent exhibition of a wide range of potential applications, such as plastic electronics, optical materials, solar cells, and biosensors. However, its insulating nature also limits its application in some electronic and energy storage devices. In order to further widen the applications of GO, it is necessary to keep its inherent characteristics while improving its conductivity. Here, a novel leaf‐like GO with a carbon nanotube (CNT) midrib is developed using vapor growth carbon fiber (VGCF) through the conventional Hummers method. The CNT midrib provides a natural electron diffusion path for the leaf‐like GO, and therefore, this leaf‐like GO with a CNT midrib displays excellent performance when applied in energy storage devices, including Li‐O₂ batteries, Li‐ion batteries, and supercapacitors.     

Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections

Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal–oxide–semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfections that results in carbon nanotube variations, which can have a severe impact on the devices’ performance and jeopardize their reliability (in this work the term reliability means time-zero failure due to manufacturing variations). This paper presents a study of the effects on transistors of the main CNFET manufacturing imperfections, including the presence of metallic carbon nanotubes (m-CNTs), imperfect m-CNT removal processes, chirality drift, CNT doping variations in the source/drain extension regions, and density fluctuations due to non-uniform inter-CNT spacing.     

Shaping Carbon Nanotubes and the Effects on Their Electrical and Mechanical Properties

A method is developed and shown to be able to shape a carbon nanotube (CNT) into a desired morphology while maintaining its excellent electrical and mechanical properties. Single, freestanding nanotubes are bent by a scanning tunneling microscopy probe, and their morphology is fixed by electron‐beam‐induced deposition (inside a transmission electron microscope) of amorphous carbon on the bent area. It is shown that the mechanical strength of the bent CNT may be greatly enhanced by increasing the amount of carbon glue or the deposition area, and the electrical conduction of the nanotube shows hardly any dependence on the bending deformation or on the deposition of amorphous carbon. Our findings suggest that CNTs might be manipulated and processed as interconnections between electronic devices without much degradation in their electrical conductance, and be used in areas requiring complex morphology, such as nanometer‐scale transport carriers and nanoelectromechanical systems.