Effect of Reoxidation on the Grain-Boundary Acceptor-State Density of Reduced BaTiO3 Ceramics

To investigate the effect of reoxidation on the grain-boundary acceptor-state density of reduced barium titanate, n -doped BaTiO₃ ceramics are sintered in a reducing atmosphere (2% H₂+ 98% N₂) and then annealed in oxygen. After annealing at 1150°C for different times, the experimental results show a relationship between temperature-averaged acceptor-state density and annealing time as N _s= N _so Bt ^1/n with n between 2 and 3. An inherent acceptorstate density N _so= 4.25 × 10¹² cm⁻² is obtained with an increase rate B = 4.8 × 10¹² cm⁻². min^−1/3, when n reaches 3. The inherent grain-boundary acceptor states in the reduced n -doped BaTiO₃ ceramics are believed not due to adsorbed oxygen ions.     

Phase Transition and Physical Characteristics of Nanograined BaTiO3 Ceramics Synthesized from Surface-Coated Nanopowders

Nanograined BaTiO₃ ceramics prepared from 40-nm-size BaTiO₃ nanopowders exhibited the cubic as well as the tetragonal phase, while nanograined BaTiO₃ ceramics prepared from BaTiO₃ nanopowders coated with Mn had only the tetragonal phase. The dielectric constant of the latter was 10 times larger than that of the former; the latter exhibited PTCR behavior with a resistivity jump ratio of about 5.0 × 10⁴. These physical properties of the BaTiO₃ ceramics appeared to be significantly affected by the strain near grain boundaries; such strain resulted in a phase transition from the cubic to the tetragonal phase in the nanograined BaTiO₃ ceramics, even though the grain size was about 40 nm.     

Defect Chemistry and Electrical Properties of Thallium Oxide Single Crystals

Ehdectrical resistivity and Hall voltage were measured between 4.2 and 300 K on T1₂O₃ crystals annealehd at 550°C for 24 h under oxygen pressures of 2×10⁴ to 10⁷ Pa. The carrier concentration varied from 7.97×10²⁰ to 5.08×10²⁰ cm⁻³, the low-temperature Hall mobility from 131 to 189 cm²/V.s, and the Fermi level from 7.1×10⁴ to 5.05×10⁴ J/mol above the bottom of the conduction band as P ₀₂ was increased from 2×10⁴ to 10⁷ Pa. The dependence of Fermi level on carrier concentration and P _0l was consistent with a parabolic density-of-states function describing the conduction band. Over the entire region of oxygen pressure investigated, Fermi-Dirac statistics were required to describe the dependence of carrier concentration on P ₀₂.     

Contactless Density Measurement of Liquid Nd-Doped 50%CaO–50%Al2O3

The density of neodymium-doped calcium aluminate (<1 mol% Nd₂O₃·50% CaO·50% Al₂O₃) liquid was measured over a wide temperature range using an electrostatic levitation furnace. The density was obtained using an UV-based imaging technique that allowed excellent illumination throughout all phases of processing, including elevated temperatures. Over the 1560–2000 K temperature range, the density could be expressed as ρ( T ) = 2.83 × 10³– 0.21( T – T _m) (kg·m⁻³) (±2%) with T _m= 1878 K, which yielded a volume coefficient of thermal expansion α( T ) = 7.5 × 10⁻⁵ K⁻¹.     

Effect of the Atomic Ratio of Ba to Ti on Optical Properties of Gold-Dispersed BaTiO3 Thin Films

Gold-dispersed BaTiO, thin films were prepared by the rf magnetron sputtering method. The atomic ratio of Ba to Ti in the films was varied and the effects on the linear and nonlinear optical properties were investigated. As the atomic ratio increased, the value of χ⁽³⁾/α₅₃₂ for the gold-dispersed BaTiO₃ thin films slightly increased. It was found that the increase in the value of χ⁽³⁾/α₅₃₂ is due mainly to a change in the crystalline state of the BaTiO₃ matrix. However, it was also found that the atomic ratio had a smaller effect on the value of χ⁽³⁾/α₅₃₂ than did the refractive index of the matrix.     

High-Energy Density Capacitors Utilizing 0.7 BaTiO3–0.3 BiScO3 Ceramics

A high, temperature-stable dielectric constant (∼1000 from 0° to 300°C) coupled with a high electrical resistivity (∼10¹²Ω·cm at 250°C) make 0.7 BaTiO₃–0.3 BiScO₃ ceramics an attractive candidate for high-energy density capacitors operating at elevated temperatures. Single dielectric layer capacitors were prepared to confirm the feasibility of BaTiO₃–BiScO₃ for this application. It was found that an energy density of about 6.1 J/cm³ at a field of 73 kV/mm could be achieved at room temperature, which is superior to typical commercial X7R capacitors. Moreover, the high-energy density values were retained to 300°C. This suggests that BaTiO₃–BiScO₃ ceramics have some advantages compared with conventional capacitor materials for high-temperature energy storage, and with further improvements in microstructure and composition, could provide realistic solutions for power electronic capacitors.     

Lanthanum-Magnesium and Lanthanum-Manganese Donor-Acceptor-Codoped Semiconducting Barium Titanate

BaTiO₃ powder doped with La donor and codoped with Mn or Mg acceptor was sintered at 1350°C/1 h in air. For Ladoped BaTiO₃, the room-temperature resistivity decreased to a minimum at [La³⁺] ∼ 0.15 mol%. For La-Mn-codoped BaTiO₃, the minimum resistivity occurred at [La³⁺] - 2[Mn²⁺] ∼ 0.15 mol%. When the ceramic was changed to a fine-grained insulator by high donor doping ([La³⁺] >0.15 mol%), its semiconductivity was restored, and the relatively homogeneous, coarse-grained microstructure recurred by codoping with either Mg or Mn acceptor, with the transition at [La³⁺] - 2[Mg²⁺] = 0.15 mol% or [La³⁺] - 2[Mn²⁺] = 0.15 mol%. The analogy of a compensation effect between La-Mn- and La-Mg-codoped BaTiO₃ suggested that Mn acceptor added to BaTiO₃ exists as Mn²⁺ ion in the bulk grain region; its influence on the positive temperature coefficient of resistivity behavior is then discussed.     

Synthesis and Characterization of Barium Lanthanum Titanates

Ternary compounds in the system BaO—TiO₂—La₂O₃ were prepared by the solid-state reaction technique at temperatures between 1300° and 1400°C using precursor oxides as the starting materials. In an alternative processing technique, BaTiO₃ was reacted with appropriate proportions of prefabricated lanthanum titanates at 1350°C to obtain the compounds. Two compounds were identified in the TiO₂-rich region of the system. The X-ray powder diffraction pattern of a compound with a chemical composition BaLa₂Ti₃O₁₀ (BaO·La₂O₃·3TiO₂) is indexed on the basis of an orthorhombic unit cell with a = 7.665 × 10⁻¹ nm, b = 28.524 × 10⁻¹ nm, and c = 3.876 × 10⁻¹ nm. The other compound, which has a chemical composition Ba₄La₈Ti₁₇O₅₀ (BaO·La₂O₃·4.25TiO₂) occurs in a narrow homogeneity range within the system. The X-ray powder diffraction pattern of the compound is indexed on the basis of an orthorhombic unit cell with a = 12.317 × 10⁻¹ nm, b = 22.394 × 10⁻¹ nm, and c = 3.881 × 10⁻¹ nm. Both the compounds are compatible with BaTiO₃ and form pseudobinary joins with BaTiO₃ in the system BaO—TiO₂—La₂O₃.     

Deviation from Stoichiometry in Cr2O3 at High Oxygen Partial Pressures

The deviation from stoichiometry, δ, in Cr₂−δO₃ was measured by a tensivolumetric method in the high pO₂ range of ≊10⁴ to 10⁴ Pa at 1100°C. The value of δ, or chromium vacancy concentration, was≊9×10⁻⁵ mol/mol Cr₂O₃ in air for Cr₂O₃ with 99.999% purity. The chemical diffusion coefficient, DT, determined from equilibration data was ≊4.6× cm²·s⁻¹ at 1100°C for pO₂= 2.2 ×10¹ Pa. The self-diffusion coefficient of Cr ions was calculated from and δ and found to be≊1.6×10-17 cm²-s⁻¹, in good agreement with recently measured values.     

Characterization of the Thermally Contracting Tungstates Ta22W4O67, Ta2WO8, and Ta16W18O94

An investigation of the properties of high-purity (>99 wt%) tantalum tungstates (Ta₂₂W₄O₆₇, Ta, WO₈, and Ta₁₆W₁₈O₉₄) included determination of density (bulk and theoretical), refined lattice constants, maximum use temperatures, micro-hardness, heat capacity, thermal expansion (contraction) and diffusivity, calculated thermal conductivity, and electrical resistivity. Usable to ∼ 1700 K in air or inert atmospheres, these tantalum tungstates have theoretical densities of 7.3 to 8.5 g/cm³, are relatively soft (120 to 655 kg/mm² hardnesses), and are electrical insulators (6× 10³ to 2× 10⁸Ω^.cm resistivities). The distinguishing properties of the materials are their thermal expansion (average CTE values from + 0.6×10⁻⁸/K to −5.1× 10⁻⁶/K at 293 to 1273 K), thermal expansion hysteresis with minimal observable microcracking, and thermal diffusivity     

Transition from Ionic to Electronic Conduction in Pure ThO2 Under Reducing Conditions

Open-circuit emf and ac conductivity studies were conducted on two batches of dense polycrystalline ThO₂. The open-circuit emf data were used to delineate the low- p o₂ ionic domain boundary for "pure" ThO₂, which is presented as a log P_θ line on a log Po₂-1/ T diagram. In addition the ionic conductivity, σ_ion, and the high-Po₂ log P_θ boundary were also determined, mainly from ac conductivity measurements, which also confirmed the Po₂^I/4 dependence of σ_p, the p-type electronic conductivity, shown by other investigators. The main results are, for the first batch, log Pθ= 12.7−220.2 × 10³/4.575T, log σ_ion= 1.9−44.3×10³/4.575T, and log P_θ=−1.0−31.4 × 10³/4.575T; for the second batch, log Pθ=11.2−219.7 × 10³/4.575T, log σ_ion= 1.7−41.6 × 10³/4.575T, and log Pθ=0.6−40.4 × 10³/4.575T. The oxygen permeability of ThO₂ tubes and the oxidation rate constant of Th were predicted from the conductivity and emf data and compared with direct measurements previously reported. The calculated and previously measured permeabilities agreed very well; however, the correlation between the predicted and previously measured oxidation kinetics was somewhat less satisfactory.     

Effects of Temperature and Strain Rate on the Plastic Deformation of Fully Dense Polycrystalline Y1Ba2Cu3O7−x Superconductor

The knowledge of the steady-state stress for plastic deformation as a function of temperature and strain rate is essential for hot-forming superconducting material into commercially useful shapes. In this paper, results are presented on the experimental determination of the rheology of fully dense polycrystalline Y₁Ba₂Cu₃O_7−x superconducting material at temperatures ranging from 750° to 950°C and strain rates of 10⁻⁴, 10⁻⁵, and 10⁻⁶ s⁻¹. The data are best fitted by a power law: ε(s⁻¹)=8.9 × 10⁻¹⁷. (s⁻¹) σ^2.5 (Pa) exp [−2.01 × 10⁵(J·mol⁻¹)|RT]. X-ray analysis shows that the superconducting material retains its phase composition after nearly 70% total strain of the sample. A strong anisotropy in the resistivity of the deformed samples is observed because of the development of a preferred orientation of the a or b axis of Y₁Ba₂Cu₃O_7−x orthorhombic perovskite single crystals perpendicular to the principal maximum compressive stress.     

Characteristics and Formation Mechanism of BaTiO3 Powders Prepared by Twin-Fluid and Ultrasonic Spray-Pyrolysis Methods

Spherical fine (micrometer and submicrometer in size) homogeneous BaTiO₃ powders were synthesized from ethanol: water solutions of BaCl₂ and TiCl₄ using the spray-pyrolysis technique. Two different atomizers—twin-fluid and ultrasonic, with a resonant frequency of 2.5 × 10⁶ Hz—were used for mist generation. Hollow spherical particles containing a certain amount of unreacted BaCl₂ phase and having a mean particle diameter of 2.5 μm were obtained at 1173 K using a twin-fluid atomizing system. Decomposition of precursors and their transition to the cubic BaTiO₃ phase occurred, even at 973 K in the case of the ultrasonic atomizing system. For the initial droplet size of 2.2 μm and residence time of ∼60 s, spherical BaTiO₃ particles with the mean particle diameter of 0.53 μm were obtained. A BaTiO₃ formation mechanism has been proposed as a reaction between TiO₂ and BaCl₂ rather than a reaction of oxides.     

In Situ Reaction Synthesis, Electrical and Thermal, and Mechanical Properties of Nb4AlC3

In this work, a bulk Nb₄AlC₃ ceramic was prepared by an in situ reaction/hot pressing method using Nb, Al, and C as the starting materials. The reaction path, microstructure, physical, and mechanical properties of Nb₄AlC₃ were systematically investigated. The thermal expansion coefficient was determined as 7.2 × 10⁻⁶ K⁻¹ in the temperature range of 200°–1100°C. The thermal conductivity of Nb₄AlC₃ increased from 13.5 W·(m·K)⁻¹ at room temperature to 21.2 W·(m·K)⁻¹ at 1227°C, and the electrical conductivity decreased from 3.35 × 10⁶ to 1.13 × 10⁶Ω⁻¹·m⁻¹ in a temperature range of 5–300 K. Nb₄AlC₃ possessed a low hardness of 2.6 GPa, high flexural strength of 346 MPa, and high fracture toughness of 7.1 MPa·m^1/2. Most significantly, Nb₄AlC₃ could retain high modulus and strength up to very high temperatures. The Young's modulus at 1580°C was 241 GPa (79% of that at room temperature), and the flexural strength could retain the ambient strength value without any degradation up to the maximum measured temperature of 1400°C.     

Compensation Effect in Semiconducting Barium Titanate

Donor-doped, stoichiometric BaTiO₃ sintered at 1350°C for 1 h exhibits a maximum room-temperature conductivity at [La³⁺]∼0.15 mol%. Elements of lower valence than Ba²⁺ or Ti⁴⁺, when incorporated into semiconducting BaTiO₃, are regarded as poisoning impurities, i.e., acceptors. They tend to increase the room-temperature resistivity of the semiconducting BaTiO₃. For insulating BaTiO₃ resulting from high Mg²⁺ acceptor doping levels, the semiconductivity can be restored by introducing higher La³⁺ donor-dopant concentrations. This behavior is interpreted as a compensation effect based on the defect chemistry of the acceptor- and donor-doped BaTiO₃.     

Effective Thermal Conductivity of a Packed Bed of Hollow Zirconia Microspheres, under Vacuum and under 100 kPa of Argon

Measurements have been made of the effective thermal conductivity of a packed bed of hollow, yttria-stabilized zirconia microspheres, under vacuum and under 100 kPa of argon gas. Above 1400 K the spheres begin to sinter together. Before this occurs, the conductivity is given under vacuum by A ₁ T ³+ A ₂ with A ₁= 2 × 10⁻¹¹ W · m⁻¹· K⁻⁴ and A ₂= 0.01 W · m⁻¹· K⁻¹. The thermal conductivity increases strongly with both the gas pressure and the degree of sintering of the spheres. The measured values can be fitted reasonably well by a model developed by Takegoshi et al. These results may have some applicability to the development of high-temperature thermal insulation.     

Grain Boundaries of Semiconducting SrTiO3 and BaTiO3 Ceramics Synthesized from Surface-Coated Powders

The chemical and electrical features of the grain boundaries in polycrystalline SrTi_0.99Nb_0.01O₃ (ST) and BaTiO₃ (BT) ceramics, which were synthesized by hot-press sintering Na- and Mn-coated semiconducting ST and BT powders, respectively, were investigated. Because of the excess negative electric charges formed near grain boundaries, electrostatic potential barriers were formed near the grain boundaries. The electrical features of the grain boundaries in ceramics are very sensitive to the amount of the coating material. When the amount of the coating material was increased from 0 to 5 wt%, the threshold voltage of the ST ceramics and the resistivity jump ratio of the BT ceramics increased from 0.7 to 81.0 V/cm and from 1.0 to 2.0 × 10³, respectively. The electrical features of the grain boundaries are related to their chemical characteristics.     

Preparation of Dense BaTiO3 Ceramics with Submicrometer Grains by Spark Plasma Sintering

Dense BaTiO₃ ceramics consisting of submicrometer grains were prepared using the spark plasma sintering (SPS) method. Hydrothermally prepared BaTiO₃ (0.1 and 0.5 µm) was used as starting powders. The powders were densified to more than similar/congruent95% of the theoretical X-ray density by the SPS process. The average grain size of the SPS pellets was less than similar/congruent1 µm, even by sintering at 1000-1200°C, because of the short sintering period (5 min). Cubic-phase BaTiO₃ coexisted with tetragonal BaTiO₃ at room temperature in the SPS pellets, even when well-defined tetragonal-phase BaTiO₃ powder was sintered at 1100° and 1200°C and annealed at 1000°C, signifying that the SPS process is effective for stabilizing metastable cubic phase. The measured permittivity was similar/congruent7000 at 1 kHz at room temperature for samples sintered at 1100°C and showed almost no dependence on frequency within similar/congruent10⁰-10⁶ Hz; the permittivity at 1 MHz was 95% of that at 1 kHz.     

Preparation of Porous BaTiO3 PTC Thermistors by Adding Graphite Porosifiers

Using an ordinary ceramic processing technique, a new method of preparing porous BaTiO₃, PTC thermistors is introduced. Adding proper graphite powders into calcined BaTiO₃, powder can increase porosity and enhance the PTC effect of the sintered sample. When the graphite addition is about 1.0 wt%, the resisivity of samples from low-purity raw materials decreases to 20 Σ·cm at room temperature, while the PTC resistivity ratio is over 10⁵ and 1–2 orders higher than that of samples without the porosifier. The porosifier has increased the reproducibility of resistivity from 60% up to 90%. In addition, the porous thermistor has a fast response to overcurrent and shows some improvement in heat resistance. With the aid of the Heywang model and the Kuwabara conclusion, the influence of graphite on grain surfaces is discussed. The experimental results show that this method is a useful technique to prepare good PTC thermistors from low-purity raw materials.     

Calcium as an Acceptor Impurity in BaTiO3

The equilibrium electrical conductivity of polycrystalline, calcium-doped BaTiO₃ was studied over the oxygen partial pressure range 10^-13 to 10⁵ Pa and the temperature range 800° to 1000°C. There is little effect if CaO is substituted for a corresponding amount of BaO, i.e., Ba, _1-xCa_xTiO₃. If CaO is substituted for a corresponding amount of the TiO₂ content, i.e., BaTi_1-xCa_xO_3-x, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. If the corresponding amount of excess CaO is added to stoichiometric BaTiO₃, i.e., BaCa_xTiO_3+x, the conductivity profiles are very close to those for samples with TiO₂ replaced by CaO, and show highly acceptor-doped behavior. This is in agreement with the replacement of a small amount of Ti by Ca²⁺ on the octahedral B-sites of BaTiO₃, where it acts as an acceptor center, Ca_T