利用基带直调信号注入锁定半导体激光器产生全光上变频信号的研究

提出了一种将低速基带信号直调产生的宽谱信号,注入至用于上变频的分布反馈式半导体激光器(DFB-LD),利用调制信号光谱中的高阶分量对从激光器进行相位锁定,从而产生光学上变频信号的方法。对直调信号注入锁定DFB-LD产生光学上变频信号的机理进行了理论分析,完成了2.5Gb/s伪随机码基带信号通过直调并注入从激光器,分别产生了30,35,40GHz副载波频率的全光上变频信号的实验,并在时域和频域上,对上变频信号的特征进行了研究。该方案结构简单,无需高速外调制器及高频本振,具有集成潜力,理论上可产生更高载频(如60GHz),对目前的光-无线混合接入提供了一种可行的解决方案。     

采用射频频率调制光谱实现半导体激光器稳频

利用半导体激光器可直接对注入电流进行高速调制的特点，将20MHz射频(RF)信号直接加在半导体激光器的高频调制端口，射频信号的一部分经过相移器后，与雪崩光电探测器(APD)所探测的饱和吸收光谱信号进行混频，经低通滤波器后产生了类色散曲线；将半导体激光器的输出频率稳定在铯原子D2线的^6S1/2(F=4)→^6P2/2(F'=5)的超精细跃迁线上，实验所测的10s内典型的频率起伏小于1MHz；这种稳频技术不需锁相放大器，具有可避免低频段较高的强度噪声和较大的频率捕获范围的优点。     

Nondegenerate Phase-Locking of a Semiconductor Laser by Sideband Injection

A semiconductor laser rate equation theory is presented that describes sideband injection locking under both weak optical injection and current modulation. By simultaneous optical injection and current modulation, control of both the phase and the frequency of a semiconductor laser is demonstrated. The phase-locked semiconductor laser operates at a different frequency to the optical injection source, with a frequency-difference given by the current modulation frequency. This method can be used to produce broadband sources, such as those producing ultrashort pulses and those required for coherent control, or to create high-frequency electronic oscillator sources with phase control by interference beating     

DFB半导体激光器自注入锁定失稳因素分析

分布反馈(Distributed Feedback, DFB)半导体激光器具有体积小、成本低和工艺成熟等优势,但兆赫兹量级的线宽使其应用范围受限。采用环形谐振器对其进行自注入锁定,可将线宽压窄到千赫兹量级,但仍存在锁定不稳定的问题。文章采用四只不同的环形谐振器对DFB半导体激光器进行自注入锁定,通过实验监测自注入锁定时多个端口的光功率、偏振态和光波长的变化,揭示影响DFB半导体激光器自注入锁定稳定性的因素有谐振模式跳变、偏振态跳变,以及外界温度和振动引起的锁定环路的相位变化,且使用不同类型的环形谐振器进行锁定时,主导的影响因素不同。控制这些影响因素可以改善DFB半导体激光器自注入锁定的稳定性,使DFB半导体激光器自注入锁定技术有更好的应用效果。     

用注入锁模法改善DFB激光器的频率响应

验证了通过注入锁模方法,分布反馈(DFB)半导体激光器的频率响应可以得到明显的改善.实验中通过一个环形器,将主激光器的输出光注入到从激光器.测量了从激光器在有注入光和没有注入光时的光谱和频率响应.发现在不同的注入光强度和波长下,激光器的调制带宽和弛豫振荡峰频率会发生变化.通过适当选择注入光的强度和波长,频率响应可以得到改善.激光器频率响应的改善可以用两个模式的拍频来解释,一个模式是从激光器的主模,另一个是主激光器的模式,该模式与从激光器的边带重合.该理论与实验结果符合得很好.     

铜蒸气激光注入锁定的数值模拟

利用铜蒸气激光动力学模型模拟了注入锁定过程，分析了注入脉冲强度、宽度和延时对激光输出的影响，获得两点重要结论，即注入光出现的最佳延时与增益开始时刻相一致，注入光最佳脉宽与净增益时间宽度相一致。     

用注入锁模法改善DFB激光器的频率响应

验证了通过注入锁模方法,分布反馈(DFB)半导体激光器的频率响应可以得到明显的改善.实验中通过一个环形器,将主激光器的输出光注入到从激光器.测量了从激光器在有注入光和没有注入光时的光谱和频率响应.发现在不同的注入光强度和波长下,激光器的调制带宽和弛豫振荡峰频率会发生变化.通过适当选择注入光的强度和波长,频率响应可以得到改善.激光器频率响应的改善可以用两个模式的拍频来解释,一个模式是从激光器的主模,另一个是主激光器的模式,该模式与从激光器的边带重合.该理论与实验结果符合得很好.     

注入锁定光纤环形腔激光器实验研究

利用注入锁定技术,将中心频率稳定、窄线宽的DFBLD作为主激光器,将光纤环形腔激光器作为从激光器。在实现注入锁定后,利用光纤环形腔谐振特性,在效压窄了注入光线宽。得到了中心频率稳定,较之DFBLD线宽更窄的输出激光,目前线宽已被压窄到70kHz。     

新型大功率双波长半导体激光器的研制

提出了一种新结构半导体双波长激光器 ,即用隧道结把两个发射不同波长的激光器结构通过外延生长的方法连接起来。通过计算和设计 ,制备了性能良好的大功率激射的双波长半导体激光器。双波长器件的实际激射波长分别为 95 1 nm和 987nm,为基模激射。器件在 5 3 0 m A直流工作时输出功率达到 5 0 0 m W,斜率效率为1 .3 3 W/A。在 2 A电流时功率达 2 .4W,斜率效率为 1 .3 8W/A;3 A电流时功率达 3 .1 W,斜率效率为 1 .2 1 W/A。     

Bistability and Switching Properties of Semiconductor Ring Lasers With External Optical Injection

We investigate both analytically and numerically the switching, locking and stability properties of a bistable semiconductor ring laser subject to an external optical injection. Minimum optical power required for the injected signal at certain frequency to switch the lasing direction of a bistable semiconductor ring laser from its initially lasing direction to initially nonlasing direction is determined. Locking to the injected signal and stability of the switched laser are investigated to give an area of reliable switching operation. Correspondingly, numerical simulation has been carried out to find successful switching and stable locking region with variable injection power and frequency, and is compared with the analytical results. The region obtained from simulation coincides well with the intersection of switching, locking and stable locking regions. The relation between switching speed and parameters of injected source is also studied numerically.     

外部光注入半导体激光器的大信号宏模型

本文给出了外部光注和半导体激光器（ＬＤ）的大信号非线性宏模型，使得对外部光注入ＬＤ的特性可以用通用电路分析软件进行分析，运用此模型对外部光注入ＬＤ的双稳和动态调制特性进行了分析，模型的分析结果与已报导的理论和实验基本一致。     

注入锁定半导体激光器稳定范围的解析表示

给出了注入锁定半导体激光器稳定锁定范围的简单解析表达式。该式仅与激光器自由运转时的参数及注入光功率有关。     

基于半导体微环谐振器的光滤波器设计方法

提出了一种完整的基于微环谐振器的光学滤波器的系统设计方法。使用该方法可以从一定滤波特性参数出发,计算得到每个环之间的耦合系数,再根据耦合系数和器件尺寸的关系得到具体的器件尺寸,从而实现光学滤波器从性能特性到器件尺寸设计的一整套完整的解决方案。并在此基础上利用感应耦合等离子体(ICP)干法刻蚀技术和聚酰亚胺介质平坦化工艺制作了双环光滤波器,对该设计方法进行了初步的实验验证,使用扫描电子显微镜和原子力显微镜等多种测试方法证实,制作的光波导具有很好的性能,测试了其梳状滤波特性。     

外注入锁定对FP激光器强度噪声的抑制

采用较强的外注入光锁定FP激光器,获得了理想的强度噪声抑制效果. 在自由运转的FP激光器的弛豫振荡峰处,最大噪声抑制强度可达9dB. 研究了注入光功率和频率失谐对于强度噪声抑制效果的影响. 此外,通过实验研究了理想噪声抑制范围与激光器稳定锁定范围之间的关系：它们都随着注入光功率的增加而增大;但在相同的注入光功率下,稳定锁定范围允许更大的频率失谐.     

基于注入锁定法布里-珀罗型激光二极管的超宽带信号产生技术

提出了一种基于三波长注入法布里-珀罗型激光二极管(FP-LD)产生超宽带(UWB)信号的方案。在FP-LD不同激射模式中注入一路信号光和两路直流探测光,实现多波长变换并得到两路反码输出和一路正码输出;再通过光纤进行色散走离,使不同波长信号之间产生时延,形成UWB脉冲,最后经过光电转换产生UWB信号。对所提出的UWB信号产生方案的原理进行分析,并对UWB信号的波形以及频谱特性进行了实验研究。在此基础上,进行了1.25Gb/s非归零码(NRZ)信号注入FP-LD产生差分编码UWB信号的实验。实验产生的UWB脉冲信号半峰全宽最小为83.3ps,10dB谱宽约为4.6GHz,其频宽比为107%。     

Dynamic Switching Response of Semiconductor Ring Lasers to NRZ and RZ Injection Signals

Dynamic response of semiconductor ring lasers (SRLs) to external optical injection with nonreturn-to-zero (NRZ) and return-to-zero (RZ) waveforms is investigated using a model including linear and nonlinear mode coupling. The switching characteristics are simulated under various device sizes, injection power levels, and frequency detuning. For NRZ, the switching time reduces with decreasing SRL radius, which has a reasonable agreement with the current experimental results. It is also demonstrated that RZ pulse with duration of several picoseconds can reliably switch 6-mum radius SRL over a detuning range of more than 100 GHz, with the end state self-sustained after switching.     

Generation of a CW Local Oscillator Signal Using a Stabilized Injection Locked Semiconductor Laser

We explore the technique of injection locking a semiconductor laser with a portion of the received optical signal to regenerate a local oscillator for eventual use with a homodyne receiver. In addition, we show that the injection locking process can be electronically stabilized by using the Modulation Transfer Ratio (MTR) of the slave laser as a monitor, given either a DFB or Fabry-Perot slave laser. We show that this stabilization technique maintains injection lock (given a locking range of ~1 GHz) for laser drift much greater than what is expected in a typical transmission system. In addition, we explore the quality of the output of the slave laser, and analyze its suitability as a local oscillator signal for a homodyne receiver.     

外注入锁定对FP激光器强度噪声的抑制

采用较强的外注入光锁定FP激光器,获得了理想的强度噪声抑制效果.在自由运转的FP激光器的弛豫振荡峰处,最大噪声抑制强度可达9dB.研究了注入光功率和频率失谐对于强度噪声抑制效果的影响.此外,通过实验研究了理想噪声抑制范围与激光器稳定锁定范围之间的关系:它们都随着注入光功率的增加而增大;但在相同的注入光功率下,稳定锁定范围允许更大的频率失谐.     

Transverse Mode Switching and Locking in Vertical-Cavity Surface-Emitting Lasers Subject to Orthogonal Optical Injection

In this paper, we report on theoretical and experimental investigation on polarization and transverse mode behavior of vertical-cavity surface-emitting lasers (VCSELs) under orthogonal optical injection as a function of the injection strength and of the detuning between the injection frequency and the free-running frequency of the solitary laser. As the injection strength increases the VCSEL switches to the master laser polarization. We find that the injection power necessary to obtain such polarization switching is minimum at two different values of the frequency detuning: the first one corresponds to the frequency splitting between the two linearly polarized fundamental transverse modes, and the second one appears at a larger positive frequency detuning, close to the frequency difference between the first-order and the fundamental transverse modes of the solitary VCSEL. We show theoretically that both the depth and the frequency corresponding to the second minimum increase when the relative losses between the two transverse modes decrease. Bistability of the polarization switching is obtained for the whole frequency detuning range. Such a bistability is found for the fundamental mode only or for both transverse modes, depending on the value of the detuning. The theoretical and experimental optical spectra are in good agreement showing that the first-order transverse mode appears locked to the external injection     

注入锁定型半导体激光放大器的响应特性研究

本文讨论了注入锁定(IL)型半导体激光放大器的功率响应、频率响应特性,分析了锁定相位、注入光功率等对这些特性的影响。