Pseudocapacitive performance of hybrid manganese oxide films with multiwalled-CNT additions

In the present study, hybrid manganese oxide films with additions of multiwalled carbon nanotubes (MWCNTs) were prepared by sol-gel process. Manganese acetate was used as the precursors and MWCNTs were added during the process. The effects of MWCNT addition and post heat treatment on the material characteristics and pseudocapacitive performance of the hybrid MWCNT/MnO_x films were investigated. Experimental results showed that manganese oxide was composed of Mn₃O₄ (minor) and Mn₂O₃ (major) phases after heat treatment. MWCNTs served as the template for the growth of manganese oxide films. Among the hybrid films prepared in the present study, manganese oxide films with 0.05 wt.% MWCNT addition heat treated at 350 °C exhibited the best electrochemical performance. The maximum specific capacitance was 340.3 F/g and retained 280.8 F/g (82.5%) after 1000 CV tests. With the addition of MWCNTs, not only the specific capacitance increased but also the reliability improved.     

Effect of process parameters on electrical, optical properties of IZO films produced by inclination opposite target type DC magnetron sputtering

IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment, in which a sintered oxide IZO target (doped with 10% ZnO, packing density of 99.99%) was used. The effects of total sputtering pressure and film thickness on IZO films properties were studied. All the films produced at room temperature have a amorphous structure, irrespective of the total sputtering pressure and film thickness. A resistivity of the order of 10⁻⁴ Ω·cm was obtained for IZO films deposited at lower pressure (film thickness of 190 nm). The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.     

Electrodeposition of cerium oxide films and composites

Nanostructured CeO₂ films were prepared by cathodic electrolytic deposition (ELD) and electrophoretic deposition (EPD). Benzoic acid has been utilized for the dispersion and charging of CeO₂ nanoparticles for EPD. The kinetics of ELD and EPD was investigated. Electrodeposition method has been developed for the deposition of poly(2-vinylpyridine) (PVP) films. The thickness of the films was varied in the range of 0.1-3 μm. The deposition mechanism was based on the pH increase in the cathodic reactions, electrophoresis of the protonated PVP macromolecules, neutralization of their charge and film formation at the cathode surface. The deposition yield was studied by the quartz crystal microbalance method. Two electrochemical strategies were developed for the fabrication of composite PVP-CeO₂ films, which were based on the electrodeposition of PVP and ELD or EPD of CeO₂. The composite films were studied by electron microscopy, X-ray diffraction, thermogravimetric and differential thermal analysis. The CeO₂ content in the composite films was varied by the variation of bath composition. The deposition methods allowed the fabrication of crack-free PVP-CeO₂ films, which provided corrosion protection of stainless steel substrates in aqueous NaCl solutions.     

Microstructures of SiO2 and TiOX films deposited by atmospheric pressure inductively coupled micro-plasma jet

Atmospheric-pressure inductively coupled micro-plasma jet was used for deposition of SiO₂ and TiO_x thin films. Si and Ti alkoxides respectively were vaporized into Ar gas to be decomposed thermally in the Ar plasma jet, being deposited as the metal oxide films. Microstructures of the films were investigated as changing the plasma conditions such as Ar gas flow rate and concentration of the alkoxides in Ar gas. The SiO₂ and TiO_x films deposited at higher Ar gas flow rates were composed of particles of micron or submicron sizes. The SiO₂ film was composed of a single layer of the particles and the particles sometimes formed unique aggregation structures. On the other hand, the TiO_x film had a structure in which the particles were piled up randomly. The structures suggested that the SiO₂ particles grew on the substrate whereas TiO_x particles were formed in plasma gas phase.     

Low temperature sputter deposition of SnOx:Sb films for transparent conducting oxide applications

SnO_x:Sb films have been prepared by reactive dc magnetron sputtering from a metallic target, with the aim of evaluating the potential of SnO_x:Sb as an attractive low-cost alternative to In₂O₃:Sn (ITO) for TCO applications. The deposition was performed without any additional heating of the substrates. The films were subsequently analysed regarding their optical, electrical and structural properties. Our results show that there is only a narrow process window for the sputter deposition of transparent and conducting tin oxide films at low temperature. A sharp minimum in resistivity of 4.9 mΩ cm is observed at an oxygen content of approximately 17% in the sputtering gas. Under these deposition conditions, the SnO₂:Sb films turn out to be both highly transparent and crystalline. At lower oxygen content (10-15%) the SnO_x:Sb films are substoichiometric, as revealed by Rutherford backscattering, and show a low transmission and high resistivity due to numerous defects and the presence of the SnO phase. At higher oxygen content (> 17%) excess oxygen is incorporated into the films, which is attributed to an increase of oxygen ion bombardment. This leads to a degradation of the electrical properties and a decrease of the density of the films, whilst the optical transmittance slightly improves.     

A study of the oxidation behavior of CrN and CrAlN thin films in air using DSC and TGA analyses

Freestanding CrN_x and Cr_1 − xAl_xN films with two different Al atomic percentages with respect to the metal sublattice (x = 0.23 and x = 0.60) were produced by pulsed closed field unbalanced magnetron sputtering (P-CFUBMS). The dynamic oxidation behavior of the films has been characterized by thermal analysis using differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). The structure of the films at different thermal-annealing temperatures were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) in an effort to understand different phase transitions and oxidation reactions observed on the DSC curves. The peak temperatures of the main exothermic/endothermic oxidation reactions in the DSC signals at different heating rates were applied to the Kissinger model for determination of activation energies. The mechanical properties of the films at different heat-annealing states were measured by nano-indentation.It was found that the CrN_x films oxidized in air after 600 °C by the dissociation of fcc (face center cubic)-CrN to h(hexagonal)-Cr₂N and nitrogen and, after 900 °C by the dissociation of h-Cr₂N to Cr and nitrogen in the film. The addition of Al to CrN film can further improve the oxidation resistance, especially for the high temperature above 800 °C. The oxidation degradation in two Cr-Al-N films started with dissociation of fcc-CrAlN to h-Cr₂N and nitrogen in the film. The presence of thermally stable Al-N bonding in the fcc-CrAlN structure can suppress the reduction of nitrogen in the film. A dense (Cr,Al)₂O₃ layer (either amorphous or crystalline) formed at early oxidation stage (< 700 °C) can act as an effective diffusion barrier slowing down the inward diffusion of the oxygen at high temperatures. Precipitation of h-AlN phase in Cr_0.77Al_0.23N and Cr_0.40Al_0.60N films were found at 900 and 1000 °C respectively, accompanied with crystalline Al₂O₃ formation. After that, both Cr-Al-N films oxidized rapidly after the dissociation of h-Cr₂N to Cr and nitrogen. In addition, Cr_0.40Al_0.60N films exhibit higher oxidation resistance than Cr_0.77Al_0.23N films. The fcc-CrAlN was retained up to 900 °C and the precipitation of h-AlN phase took place after 1000 °C in Cr_0.40Al_0.60N films. Cr_0.40Al_0.60N films also retained a hardness of 25 GPa after annealing at 800 °C in ambient air for 1 h. The activation energies of the final oxidation exothermic peaks in CrN_x, Cr_0.77Al_0.23N and Cr_0.40Al_0.60N films in the current study were found to be 2.2, 3.2 and 3.9 eV atom^− 1 respectively.     

硫酸亚铁浓度对TA2纯钛微弧氧化膜层颜色的影响

在以Na3PO4为主盐溶液的电解液体系中加入FeSO4,在纯钛TA2基体上进行微弧氧化,获得颜色均匀、致密性较好的浅棕色氧化物陶瓷膜层,研究了FeSO4浓度对微弧氧化膜层颜色的影响规律.结果表明,该膜层颜色在中国人牙齿颜色分布的色度范围内,对由四环素和氟引起的变色牙遮色有特殊应用,溶液中FeSO4浓度的增大,膜层的颜色向红色和黄色发生偏移.     

Effect of dislocation density on the low temperature aging behavior of an ultra low carbon bake hardening steel

Strain aging was studied in an ultra low carbon (ULC) steel with a total carbon content of 20 ppm (wt.%) in order to identify the process stages and mechanism of bake hardening in this type of steel. The effects of dislocation density, varied by means of uniaxial tensile prestraining (1–10%) on the aging kinetics were investigated within an aging temperature range of 50–170°C. The aging was evaluated by means of strength measurements and the determination of interstitial carbon content after aging using a piezoelectric composite oscillator operating at 40 kHz. The interaction between interstitial carbon and dislocations was examined through amplitude dependent internal friction measurements. The influence of dislocation density on the aging behavior have been discussed with reference to the kinetics and mechanism of the aging process.     

Effect of yttrium coating on the oxidation behavior of Ni3Al

Yttrium-coated Ni₃Al with post heat treatment has shown good high-temperature oxidation resistance. To understand the effect of the Y-coating and post heat treatment on the oxidation resistance of Ni₃Al, the specimens were coated with Y by an ion-plating method, and heat treatment was performed at low oxygen level before or after the Y-coating was applied. Performance of the Y-coated Ni₃Al was evaluated by isothermal and cyclic oxidation tests. A simple deposition of Y on Ni₃Al did not change the oxidation kinetics, but the post heat treatment after Y-ion plating significantly decreased the oxidation rate of Ni₃Al. The scale formed on Y-coated Ni₃Al with post heat treatment after Y-ion plating showed a fine and dense structure which was grain refined by the presence of a (Y, Al) O-type oxide in the scale. The coated Y layer becomes a Y-Al compound during heat treatment. The presence of the (Y, Al)O-type oxide in grain boundaries or the lattice of Al₂O₃ modify the diffusion rate of Al and oxygen, and the oxide microstructure during oxidation. Improvement of cyclic-oxidation resistance of Ni₃Al by the Y-coating occurs because the presence of (Y, Al)O-type oxide develops fine-grain oxides which can easily relieve the growth stress.     

Effect of hydrogen on mold filling behavior of TiAl alloy

Since TiAl alloy requires superior mold filling capability, this study used hydrogen to improve its mold filling capability by introducing the hydrogen into the molten alloy. The mold filling was evaluated by pouring the molten alloys containing various levels of hydrogen into a thin perforated sheet graphite mold. The volume percentage filling the mold was increased with increasing hydrogen addition. And the increasing tendency became very slight after the hydrogen reached 15 kPa. In addition, the pore formation of the alloy was also examined by X-ray radiographs.     

Annealing time dependent structural,morphological, optical and electrical properties of RF sputtered p-type transparent conducting SnO2/Al/SnO2 thin films

Transparent p-type conducting SnO₂/Al/SnO₂ multilayer films were fabricated on quartz substrates by radio frequency (RF) sputtering using SnO₂ and Al targets. The deposited films were annealed at a fix temperature of 500 °C for different time durations (1–8 h). The effect of annealing time on the structural, morphological, optical and electrical performances of SnO₂/Al/SnO₂ multilayer films was studied. X-ray diffraction (XRD) results show that all the p-type conducting films possess polycrystalline SnO₂ with tetragonal rutile structure. Hall-effect results indicate that 500 °C for 1 h is the optimum annealing condition for p-type SnO₂/Al/SnO₂ multilayer films, resulting in a hole concentration of 1.14×10¹⁸ cm^–3 and a low resistivity of 1.38 Ω·cm, respectively. The optical transmittance of the p-type SnO₂/Al/SnO₂ multilayer films is above 80% within annealing time range of 1–8 h, showing maximum for the films annealed for 1 h.     

Effect of NbN and ZrN films formed by magnetron sputtering on Ti and porcelain bonding

Niobium nitride (NbN) and zirconium nitride (ZrN) were deposited on Ti substrates by direct-current (DC) reactive magnetron sputtering; the deposited NbN and ZrN films served as intermediate layers of a Ti and porcelain interface. X-ray diffraction (XRD) results proved that the deposited NbN and ZrN films were polycrystalline with a cubic microstructure. The Ti and porcelain bonding strength of the samples in Group Control (27.2 ± 0.75 MPa), Group NbN (43.1 ± 0.59 MPa), and Group ZrN (52.4 ± 0.80 MPa) were measured. The surface roughness in the case of Group Control (1.863 ± 0.10 μm), Group NbN (2.343 ± 0.07 μm), and Group ZrN (2.346 ± 0.10 μm) was also investigated. Statistical analysis showed that both films helped improve the Ti and porcelain bonding strength and increase the surface roughness. Scanning electron microscopy (SEM) results showed that no apparent oxide layer was formed at the Ti and porcelain interface in both Group NbN and Group ZrN. Energy-dispersive X-ray spectroscopy (EDS) results showed that ZrN was more effective in preventing Ti oxidation than was NbN. Overall, the experimental results showed that the deposition of both NbN and ZrN films helps improve the Ti and porcelain bonding strength and that ZrN films are more effective.     

固溶温度对690合金在NaOH溶液中的电化学性能影响

采用SEM方法研究不同温度固溶处理的690合金组织结构,利用动电位极化、电化学阻抗和局部电化学交流阻抗（LEIS）等方法研究了其在NaOH溶液中的电化学行为。SEM结果表明,固溶处理温度1095℃的690合金的晶粒较大,晶界上分布着连续的碳化物。极化曲线结果表明,固溶处理温度1090℃的690合金在氢氧化钠溶液中的电流密度最大;电化学阻抗表明,固溶处理温度1100℃的690合金在氢氧化钠溶液中的阻抗模值较大。局部电化学交流阻抗谱表明,不同温度固溶处理的690合金在氢氧化钠溶液中的电化学阻抗具有明显不同的分布特征。     

Thermistor behavior of PEDOT:PSS thin film

The temperature-dependent resistance changing characteristics (thermistor behaviors) of a poly(3,4-ethylenedioxythophene):poly(4-styrenesulfonate) (PEDOT:PSS) thin film are investigated in the 30–100 °C range using Greek-cross and bar patterns. The PEDOT:PSS film was spin-coated onto a Si wafer passivated with a SiO₂ layer, and a conventional dry etching technique was used to pattern the PEDOT:PSS film in conjunction with a nitride etch mask layer. Cr/Au was used for the electrode material. It was found that the characteristic temperature (T₀) and resistivity of the PEDOT:PSS film have an inversely proportional relationship with the number of coatings and the number of interfaces between multiply coated PEDOT:PSS layers. It was also found that as the number of coatings and the number of the interfaces increase, lower temperature-dependent resistance changes are observed. The temperature coefficient of resistance (TCR) value of 60 nm thick PEDOT:PSS film was slightly larger than or comparable to that of a conventional metal (Au or Pt) thermistor. The possibility of utilizing the PEDOT:PSS thin film in thermistor applications is discussed.     

Effect of antimony doped tin oxide on behaviors of waterborne polyurethane acrylate nanocomposite coatings

A multi-functional waterborne polyurethane acrylate (WPUA) nanocomposite coating was prepared through introducing the acrylate groups into the end of the polyurethane main chains and then modified by antimony doped tin oxide (ATO) nanoparticles by ultrasonic dispersion. Structural and morphological features of coatings were assessed using Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and a 3D measuring laser microscope. Performance of the coatings was evaluated using water resistance studies, thermogravimetric analysis (TGA), dynamic mechanical thermal analysis (DMTA) and mechanical tests such as tensile strength, elongation at break. The data showed that the WPUA/ATO coatings possessed good mechanical properties and thermal stability. The UV-visible-near infrared (UV-VIS-NIR) spectra results suggested that the WPUA/ATO coatings could absorb near infrared radiation so that it would prevent heat transmission and heat diffusion effectively.     

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.     

熔盐环境下热障涂层的等温热腐蚀行为研究

采用电子束物理气相沉积（EB-PVD）在镍基高温合金表面制备了YSZ/NiCoCrAlY双层结构热障涂层,研究了其在熔盐环境下的等温热腐蚀行为。结果表明,涂层在加热过程中发生相变引起体积收缩,导致涂层内部产生微裂纹。熔盐填充涂层内微裂纹和柱状晶间隙,降低了涂层的应变容限,引起涂层内应力升高。同时,熔盐促使热生长氧化层（TGO）碱性溶解,产生疏松多孔的氧化物层,导致TGO层加速增厚。在热应力作用下,疏松层氧化物破碎,最终导致涂层剥落。     

Effect of polyethylene glycol on hydrophilic TiO2 films: Porosity-driven superhydrophilicity

Polyethylene glycol (PEG) 2000 was used as a templating reagent to synthesize porous TiO₂ thin film by sol-gel process. The nanopores resulting from the presence of growing cracks were ultimately formed on the surface when PEG content was higher than the critical value. Surprisingly, stable pore structure disappeared and surface became fluctuating and dehiscent after PEG amount increased to 0.02 M. Besides, two main hypotheses were proposed in order to explain this superhydrophilic behavior, namely the Wenzel and Cassie wetting impregnating models. Furthermore, the transition between these two wetting regimes was investigated and the criteria for the design and construction of Cassie impregnating wetting surface was also discussed. It was found that Cassie state shifting from Wenzel state could be easily achieved with increasing hole depth on TiO₂ surface. The study of transition between Wenzel and Cassie impregnating wetting regimes on porous films provides valuable wetting mechanism of porosity-driven wettability for the design of superhydrophilic surfaces.     

A comparison of the oxidation behavior of CrN films deposited using continuous dc,pulsed dc and modulated pulsed power magnetron sputtering

The study is aimed at comparing the oxidation behavior of the stoichiometric CrN films deposited by continuous dc magnetron sputtering (dcMS), mid-frequency pulsed dc magnetron sputtering (PMS), and modulated pulsed power (MPP) magnetron sputtering techniques in a closed field unbalanced magnetron sputtering system. These as-deposited CrN films exhibited a cubic structure and similar stoichiometric compositions, but with different microstructures and residual stresses. After annealing in the ambient air from 600 to 1000 °C, the changes in the crystal phase, microstructure, and hardness of the films were characterized using X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy line scan, and nanoindentation. The oxidation activation energies of the films were calculated using Arrhenius equation. It was found that the MPP CrN film exhibited superior oxidation resistance than dcMS and PMS CrN films. After annealing at 900 °C, the MPP CrN film exhibited an extremely dense structure and the cubic phase was well maintained. On the other hand, the dcMS and PMS CrN films were severely oxidized into a porous structure with the development of β-Cr₂N and Cr₂O₃ phases and a rapid degradation of the cubic phase after 700 and 800 °C, respectively. The results indicate that all films showed a parabolic oxidation rate below 900 °C. The oxidation activation energies for the dcMS, PMS and MPP CrN films are 116 kJ/mol, 141 kJ/mol, and 195 kJ/mol, respectively. The better oxidation resistance of the MPP CrN film is attributed to its dense microstructure and low residual stress.