Si1 − x Ge x /Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates

The growth of heterostructures with Si_{1 ? x} Ge _x layers on $\left( {1\bar 102} \right)$ sapphire substrates by molecular-beam epitaxy with a silicon sublimation source and a germanium gas source (GeH₄) is reported. The systematic study of the influence of substrate temperature and thickness of the silicon buffer layer shows that the optimal conditions for growing epitaxial Si_{1 ? x} Ge _x layers are provided at a temperature of T _S = 375–400°C. There are significant differences in the orientations of Si_{1 ? x} Ge _x layers, depending on the thickness d of the Si buffer layer: the preferred orientations are (100) at d ≥ 100 nm and (110) for thinner layers. Heterostructures with thick (～1 μm) Si_{1 ? x} Ge _x layers, doped with erbium atoms, exhibit intense photoluminescence at λ = 1.54 μm.     

C8051F96x/Si102x/3x：MCU

Silicon Laboratories推出节能单片机（MCU）和无线MCU解决方案,该方案特别适用于功耗敏感的嵌入式应用。C8051F96xMCU、Si102x和Si103x无线MCU系列产品基于低功耗专利技术。     

Si1—x Gex／Si定向耦合器的研制

在运用ＳｉＧｅ脊形波导单模条件和有效折射率法分析ＳｉＧｅ／Ｓｉ定向耦合器结构参数基础上，采用分子束外延和各向异性腐蚀技术制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ单模定向耦合器。在波长为１．３μｍ时，平均串音小于－１８．１ｄＢ，输出功率耦俣效率达到９８．１％。     

Quantitative calibration and germanium SIMS depth profiling in Ge x Si1 − x /Si heterostructures

Methods for minimizing nonlinear matrix effects in the quantitative determination of germanium concentrations in Ge _x Si_{1 ? x} layers by secondary ion mass spectrometry are discussed. The analysis conditions with positive SiCs⁺, GeCs⁺ and negative Ge^?, Si^? secondary ions produced during sputtering by cesium ions are used in the TOF.SIMS-5 setup with a time-of-flight mass analyzer. In contrast to published works for TOF.SIMS setups, the linear dependence of the ion-concentration ratio Ge^?/Si^? on x/(1 ? x) is shown. Two new linear calibrations for the germanium concentration as a function of the cluster Ge ₂ ^? secondary ion yield are proposed. The calibration factors are determined for all linear calibrations at various energies of sputtered cesium ions and Bi⁺ and probe Bi ₃ ⁺ ions. It is shown for the first time that the best depth resolution among the possible conditions of quantitative germanium depth profiling in Ge _x Si_{1 ? x} /Si multilayer heterostructures is provided by the calibration mode using elemental Ge^? and Si^? negative secondary ions.     

Si484x：多波段接收器

SiliconLaboratories推出多波段无线电接收器IC解决方案，使轮调收音机产品具有现代的数字显示功能。基于专利技术的低中频数字架构，Si484x接收器采用CMOS工艺，减少了超过70％的无线电器件数量，     

高温对GexSi1—x／Si

用ＧｅｘＳｉ１－ｘ／Ｓｉ亚稳材料在高温下制作了光波导，它的传输损耗为０．８ｄＢ／ｃｍ，比低温工艺的０．５ｄＢ／ｃｍ稍大。并发现ＧｅｘＳｉ１－ｘ／Ｓｉ材料的大量失配位错的一些有趣的现象。     

基于Si472x设计实现DSP收音机

基于Si472x单晶片数字收音机芯片和低功耗数字信号处理器TMS320VC54x系统设计和实现DSP FM收音机.收音机以TMS320VC54x为控制核心,实现全频手动和自动搜台功能.重点阐述了Silicon Laboratory公司的Si472x芯片的工作原理及特性以及收音机相关硬件电路的设计,并对软件设计流程和设计的测试结果做了简单描述,为单晶片DSP收音机的设计提供了借鉴.     

Inelastic electron scattering cross-section spectroscopy of Ge x Si1 − x nanoheterostructures

Two-component Ge _x Si_{1 ? x} (0 ≤ x ≤ 1) structures are studied by electron spectroscopy. The atomic composition of the structures is determined from X-ray photoelectron spectroscopy data. The reflection electron-energy-loss spectra for a series of samples with different x at primary-electron energies from 200 to 3000 eV are recorded. Using the experimental spectra, the electron energy loss dependences of the product of the electron inelastic mean free path and the differential inelastic electron scattering cross section are calculated. It is shown that the quantitative characteristics of these dependences can be used to determine the atomic concentrations of elements in the investigated system.     

Solid-State Synthesis and Thermoelectric Properties of Mg2Si1−x Sn x

Mg₂Si_1?x Sn _x (0 ≤ x ≤ 1) solid solutions have been successfully prepared by mechanical alloying and hot pressing as a solid-state synthesis route. All specimens were identified as phases with antifluorite structure. The electrical conduction changed from n-type to p-type at room temperature for x ≥ 0.5 due to the intrinsic properties of Mg₂Sn. The absolute value of the Seebeck coefficient decreased with increasing temperature, and the electrical conductivity increased with increasing temperature; this is indicative of nondegenerate semiconducting behavior. The thermal conductivity was reduced by Mg₂Si-Mg₂Sn solid solution due to phonon scattering by the alloying effect.     

Silicon Labs推出数字电源控制器Si825x

Silicon Laboratories日前展示了首批专门为电源控制应用设计的Si825x产品。Si825x系列单芯片电源控制器以专利结构为基础，将DSP的灵活性和可编程性与基于硬件的控制器的快速反应结合在一起，这种独特的结构使Si825x系列产品能够为大多数隔离和非隔离的开关式电源拓扑提供数字电源控制和电源管理功能。与典型DSP解决方案相比，其占用空间只有10％，而电源电流只有15％。     

SiGe／Si异质结构的x射线双衍射

通过ｘ射线双晶衍射图形了ＳｉＧｅ／ＳｉＨＢＴ的电学特性与晶格结构的关系。     

Si216x／6×2：DVB解调器

SiliconLabs推出新型全球数字视频广播（DVB）解调器，支持新的有线、地面和卫星接收的全球DVB标准。新型Si216x／6x2系列产品包括特别针对多接收器iDTV和STB应用的业内首款双信道DVB解调器。     

Si／Si1—x Gex异质结双极晶体管和Si双极晶体管高频性能的比较分析

本文介绍了对Si/Si1-x Gex异质结双极晶体管（HBT）和硅双极结晶体管（BJT）高频性能进行模拟比较的结果，其结构参数是为获得最高fT≈fmax设计的，模拟研究表明，（1）Si/Si1-xGex HBT具有64GHz的峰值fT(=fmax)，它比Si BJT提高了16．4％，（2）发射极充电时间对,高频性能有相当大的影响，即使电流密度高达80kAcm^-2时也是如此；（3）SiGe基区组分梯度和基区掺杂分布强烈影响着fT和fmax，研究发现高斯梯度分布具有最高的峰值fT=fmax，据估计其峰值截止频率比均匀掺杂分布高30％。（4）高频性能对集电极设计的依赖关系表明，要在fT,fmax和BVCBO间进行折衷处理，并且（5）通过降低发射区或基区掺要浓度，可设计出fT超过100GHz的Si1-xGexHBT，同样，通过提高基区掺杂浓度和降低非本征电容和电阻，可实现100GHz的fmax.     

Si474x：车用AM/FM收音机接收器

Silicon Laboratories发表Si474x高集成度车用AM／FM收音机接收器芯片。基于Silicon Laboratories备受肯定的数字低中频架构,Si474x系列是首个采用CMOS工艺的车用AM／FM接收器,可符合车用等级的收音机性能需求,同时节省成本并加速客户产品的匕市时间。Si474x系列支持全球收音机频道,包括FM、FM无线电数据系统（RDS）、AM、长波（LW）、短波（SW）和气象频道（Weother Band）,以简易设计提供支持全球各地不同需求的弹性。     

应变层Si1—x—yGexCy合金研究

本文综述了Ｓｉ１－ｘ－ｙＧｅｘＣｙ合金的研究进展，包括合金的应变补偿效应，微观结构，能带结构和光电特性等。     

SiGe/Si异质结构的x射线双晶衍射

通过x射线双晶衍射图形讨论了SiGe/SiHBT的电学特性与晶格结构的关系