膜厚对溅射铬膜与锆合金基体附着性的影响

研究了膜层厚度对锆合金基体上制备的直流磁控溅射铬膜附着性的影响。用扫描电镜观察了界面形貌,用原子力显微镜观察了膜层表面形貌．用能谱仪测定了界面成分．用划痕法测定了铬膜的附着性。结果表明：膜／基界面结合良好,界面上存在成分梯度．成分升降区狭窄;随着铬膜厚度从0．5μm增加到2．0μm,晶粒迅速长大、致密的纫纤维状组织的端面出现拱形．铬膜层附着性降低约50％;但铬膜厚度达1．0μm后．晶粒长大的速度和铬膜附着性下降的速度同时趋缓,表明铬膜的附着性与其晶粒大小有明显关系。膜层厚度增加引起膜层附着性下降的主要原因是由于厚度增加所带来的膜层组织及力学性能变化和膜层应力增加。     

磁控溅射制备金属铀膜

研究了通过磁控溅射方法制备高纯金属铀膜的可行性。采用X射线衍射（XRD）、俄歇电子能谱（AES）、扫描电镜（SEM）、表面轮廓仪分析了沉积在单晶硅或金基材上铀薄膜的微观结构、成分、界面结构及厚度、表面形貌和表面粗糙度。分析结果表明：磁控溅射制备的铀薄膜为纯金属态,氧含量和其它杂质含量均低于俄歇电子能谱仪的探测下限;溅射沉积的铀镀层与铝镀层之间存在界面作用,两者相互扩散并形成合金相,扩散层厚度约为10nm。铀薄膜厚度可达微米级,表面光洁,均方根（RMS）粗糙度优于15nm。     

磁控溅射制备纳米厚度连续金膜

研究了磁控溅射工艺参数对Au膜生长速率、表面粗糙度和微观结构的影响。结果表明:当溅射功率低于200W时,溅射功率对薄膜表面粗糙度、微观结构的影响不明显。标定了溅射功率为20W条件下的Au膜生长速率,观察了Au的生长过程,在Si基底沉积的Au为岛状(Volver-Weber)生长模式,Au膜厚度为8nm时,薄膜开始连续。晶粒尺寸与薄膜厚度的关系研究结果表明:在生长初期,晶粒尺寸随厚度线性增大;随后,晶粒尺寸增速变缓,直至停滞;趋于70nm时,新晶粒形成取代晶粒长大。     

溅射功率对磁控溅射制备Bi薄膜结构和性能的影响

采用直流磁控溅射方法在不同功率下制备了铋(Bi)薄膜,对薄膜的沉积速率、表面形貌、生长模式、晶体结构进行了研究,并对其晶粒尺寸和应力的变化规律进行了分析。扫描电镜(SEM)图像显示：薄膜均为柱状生长,平均晶粒尺寸随溅射功率先增大后减小,薄膜的致密度随着功率的增加而降低,在60W时又变得较致密。X射线衍射(XRD)结果表明：Bi薄膜均为多晶斜六方结构,薄膜内应力随功率的增加由张应力变为压应力。     

直流磁控溅射法制备含氦铝膜

采用氦氩混合气氛下直流磁控溅射沉积方法制备含有氦原子的金属铝膜。经碳原子弹性前冲散射分析（C-ERDA）,薄膜中氦原子浓度可达约7％,且分布均匀。实验研究了薄膜中的氦含量与溅射真空室气氛中氦的相对含量、基底偏压及沉积温度间的关系。薄膜的X射线衍射分析结果显示：膜中的氦含量变化并未引起明显的峰位移,只是随氦含量增加谱峰宽化。热释放实验证实,氦在薄膜中稳定存在,约500℃以上时方出现氦的释放。     

磁控溅射法制备含氦钛膜及膜中氦的热解吸研究

采用He/Ar复合气氛下磁控溅射方法,在Ti、TiZrYAl 和TiMoYAl等3种薄膜中引入浓度(氦-金属比)高达0.19的氦.引入的氦在膜层内沿深度均匀分布,并主要存在于直径为2～5 nm的高压He泡内.热解吸实验表明,在相同He含量下,TiHe膜中He的解吸峰温度与氚化钛中衰变产生的3He的解吸峰温度基本一致.与纯钛相比,合金膜中氦的热解吸谱宽化明显,表明He在合金膜内的捕获形式更为复杂.     

磁控溅射沉积含He纳米晶钛膜制备

采用直流磁控溅射方法,通过分别改变衬底温度及He分压来制备不同氦含量的钛膜。利用PBS、XRD、TEM及AFM分别对钛膜中的He含量、平均晶粒尺寸及膜的表面形貌进行分析。结果表明：在不同温度范围内,温度变化对所制备钛膜中He含量的影响明显不同;He含量与晶粒尺寸直接相关,氦原子进入钛膜后,抑制了晶粒的长大;随着钛膜中He与Ti的原子个数比由1.0%增加到11.9%,TEM测得的平均晶粒尺寸由约35nm减小到约4nm;选择合适的He分压,能够制备出He含量较高的氦钛膜。     

合金化对溅射Ti膜材结构和力学性能的影响

研究了直流磁控溅射Ti、TiMo、TiMoY及TiMoYAl薄膜的形貌、结构和力学性能,探讨了合金化对Ti膜的影响。结果表明,合金化使Ti膜由α相结构转变为α+β双相结构,改变了薄膜的择优取向,降低了薄膜表面粗糙度,并改善了薄膜的力学性能。     

直流磁控溅射钛及钛合金薄膜的性能研究

用直流磁控溅射的方法在Si及Mo基片上制取Ti及其Ti合金薄膜。研究了基片温度等镀膜工艺参数对薄膜性能的影响,并用XPS、XRD、SEM分析薄膜的化学组成和结构特征,对薄膜的生长模式进行分析。结果表明,合金的加入降低了晶粒尺寸;升高温度可增大薄膜晶粒尺寸,改善薄膜结合能力;合金膜的成分与靶材基本一致。     

CSNS四极陶瓷真空盒磁控溅射镀TiN膜研究

介绍了中国散裂中子源（CSNS）快循环同步加速器（RCS）中四极陶瓷真空盒内表面镀TiN膜技术与成膜系统装置。采用磁控溅射法,通过在绝缘体长直管道外表面安装金属屏幕罩来提供同轴电场的方法,解决了镀膜均匀性的问题。镀膜样品Ti、N比在0.9~1.1范围内,膜厚为100nm左右,附着力达到要求,总体满足设计指标,完成了CSNS四极陶瓷真空盒样机的镀膜。     

Cu Films Deposited by Unbalanced Magnetron Sputtering Enhanced by ICP and External Magnetic Field Confinement

Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy （SEM）, atomic force microscope （AFM） and X-ray diffraction （XRD）. The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.     

Structure and Tribology Property of Carbon Nitride Films Deposited by MW-ECR Plasma Enhanced Unbalanced Magnetron Sputtering

Carbon nitride films were deposited by a twinned microwave electron cyclotron resonance （ECR） plasma source enhanced unbalanced magnetron sputtering system. The results indicate that the structure of the films is sensitive to the nitrogen content. The increase in the nitrogen flow ratio leads to an increase in the sp3 content and an improvement of the tribological properties.     

Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanced Radio Frequency Magnetron Sputtering

CrN films have been synthesized on Si（100） wafer by inductively coupled plasma （ICP）-enhanced radio frequency （RF） magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.     

Effects of Annealing on Luminescence of ZnO Films Deposited on Si Substrates by RF Magnetron Sputtering

Effects of growth ambience, annealing ambience and temperature on the photoluminescence (PL) emission properties of ZnO films deposited on Si (100) substrates by RF magnetron sputtering have been investigated. After annealing, the crystal quality of ZnO films was markedly improved, and the intensity of UV emission peak increased obviously. By varying the flow rate ratio of O2/Ar, annealing atmosphere in oxygen-deficient or oxygen-rich ambience and heating temperature during deposition, the evolution of peak intensities and positions for blue and green emission is formed. This is attributed to the deposition and annealing parameters that control the desorptions and adsorptions of oxygen atoms on the films, and leads to the changes of concentrations of Zinc and oxygen vacancies in the films.     

Effect of N2-Gas Partial Pressure on the Structure and Properties of Copper Nitride Films by DC Reactive Magnetron Sputtering

Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.     

The Effect of Ion Current Density on Target Etching in Radio Frequency-Magnetron Sputtering Process

The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.     

Effect of O2 in O2/Ar Gas Mixture on Morphological and Optical Properties of TiO2 Thin Films Deposited by DC Cylindrical Magnetron Sputtering

TiO₂ films have been deposited on BK7 substrates by DC cylindrical magnetron sputtering setup in ambient temperature. The samples were fabricated at various O₂/Ar reactive gas mixtures. The effects of changing O₂ amount in O₂/Ar reactive gas mixture on structural, morphological and optical properties of films were studied. The thickness of films was measured by surface profile meter. Thickness of films decreases with increasing the O₂ amount in gas mixture. XRD studies shows that the films are amorphous. Atomic Force Microscopy was used to evaluate and compare the surface roughness and morphologies. The optical properties (transmission and reflection) of the samples were measured by UV–Vis–NIR spectrophotometer. Results show that increasing the O₂ amount in O₂/Ar mixture changes the surface morphologies and optical properties of films. All films exhibit a transmittance higher than 65 % in the visible region. The band gap of films was calculated from the optical measurements. The band gap of TiO₂ thin films increases from 3.471 to 3.526 for different O₂/Ar amounts.     

Effect of Power and Nitrogen Content on the Deposition of CrN Films by Using Pulsed DC Magnetron Sputtering Plasma

CrN thin films are deposited on stainless steel (AISI-304) substrate using pulsed DC magnetron sputtering in a mixture of nitrogen and argon plasma. Two set of samples are prepared. The first set of sample is treated at different powers (100 W to 200 W) in a mixture of argon (95%) and nitrogen (5%). The second set of samples is treated at different nitrogen concentrations (5% to 20%) in argon (95% to 80%) for a constant power (150 W). X-ray diffraction (XRD) analysis exhibits the development of new phases related to different compounds. The crystallinity of CrN varies by varying the applied power and nitrogen content. Crystallite size and residual stresses of the CrN (111) plane show similar variation for the applied power and nitrogen contents. Scanning electron microscopy (SEM) analysis shows the formation of a granular surface morphology that varies with the change of powers and nitrogen content. The thickness of the film is measured using SEM cross sectional images and using atomic force microscopy (AFM) scratch analysis. The maximum film thickness (about 755 nm) is obtained for the film deposited at 5% nitrogen in 95% argon at 150 W power. For these conditions, maximum hardness is also observed.     

Effect of O<Subscript>2</Subscript>/Ar Mixture on the Structural and Optical Properties of ZnO Thin Films Fabricated by DC Cylindrical Magnetron Sputtering

Direct Current Cylindrical Magnetron Sputtering Setup was used to deposit ZnO thin films on BK7 substrates. The effects of changing O₂/Ar reactive gas mixtures on the structural and optical properties of films were studied. Crystallinity and structure of films were obtained by X-ray diffraction (XRD). Preferential crystalline growth orientation of ZnO films detected by XRD was always along the (002) orientation. The thickness of films was measured by surface profilometer which showed thickness increasing from 68.7 to 80.8 nm for 3–6% O₂ amount respectively. The morphology and roughness of the films were investigated by Atomic Force Microscopy (AFM). As oxygen gas amount was increased, the roughness and the grain size were decreased and the deposition rate was increased. The optical transmittance of ZnO films are obviously affected by the changing of O₂/Ar reactive gas mixtures. All films exhibit a transmittance higher than 70% in the visible region. The optical band gap of films was measured by Tauc’s method. The results show that by increasing the amount of O₂ in reactive gas mixture, the optical band gap of deposited films increases.