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膜厚对溅射铬膜与锆合金基体附着性的影响 总被引:2,自引:0,他引:2
研究了膜层厚度对锆合金基体上制备的直流磁控溅射铬膜附着性的影响。用扫描电镜观察了界面形貌,用原子力显微镜观察了膜层表面形貌.用能谱仪测定了界面成分.用划痕法测定了铬膜的附着性。结果表明:膜/基界面结合良好,界面上存在成分梯度.成分升降区狭窄;随着铬膜厚度从0.5μm增加到2.0μm,晶粒迅速长大、致密的纫纤维状组织的端面出现拱形.铬膜层附着性降低约50%;但铬膜厚度达1.0μm后.晶粒长大的速度和铬膜附着性下降的速度同时趋缓,表明铬膜的附着性与其晶粒大小有明显关系。膜层厚度增加引起膜层附着性下降的主要原因是由于厚度增加所带来的膜层组织及力学性能变化和膜层应力增加。 相似文献
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研究了通过磁控溅射方法制备高纯金属铀膜的可行性。采用X射线衍射(XRD)、俄歇电子能谱(AES)、扫描电镜(SEM)、表面轮廓仪分析了沉积在单晶硅或金基材上铀薄膜的微观结构、成分、界面结构及厚度、表面形貌和表面粗糙度。分析结果表明:磁控溅射制备的铀薄膜为纯金属态,氧含量和其它杂质含量均低于俄歇电子能谱仪的探测下限;溅射沉积的铀镀层与铝镀层之间存在界面作用,两者相互扩散并形成合金相,扩散层厚度约为10nm。铀薄膜厚度可达微米级,表面光洁,均方根(RMS)粗糙度优于15nm。 相似文献
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研究了磁控溅射工艺参数对Au膜生长速率、表面粗糙度和微观结构的影响。结果表明:当溅射功率低于200W时,溅射功率对薄膜表面粗糙度、微观结构的影响不明显。标定了溅射功率为20W条件下的Au膜生长速率,观察了Au的生长过程,在Si基底沉积的Au为岛状(Volver-Weber)生长模式,Au膜厚度为8nm时,薄膜开始连续。晶粒尺寸与薄膜厚度的关系研究结果表明:在生长初期,晶粒尺寸随厚度线性增大;随后,晶粒尺寸增速变缓,直至停滞;趋于70nm时,新晶粒形成取代晶粒长大。 相似文献
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采用直流磁控溅射方法,通过分别改变衬底温度及He分压来制备不同氦含量的钛膜。利用PBS、XRD、TEM及AFM分别对钛膜中的He含量、平均晶粒尺寸及膜的表面形貌进行分析。结果表明:在不同温度范围内,温度变化对所制备钛膜中He含量的影响明显不同;He含量与晶粒尺寸直接相关,氦原子进入钛膜后,抑制了晶粒的长大;随着钛膜中He与Ti的原子个数比由1.0%增加到11.9%,TEM测得的平均晶粒尺寸由约35nm减小到约4nm;选择合适的He分压,能够制备出He含量较高的氦钛膜。 相似文献
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Metallic copper(Cu) films were deposited on a Si (100) substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy (SEM), atomic force microscope (AFM) and X-ray diffraction (XRD). The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films. 相似文献
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Carbon nitride films were deposited by a twinned microwave electron cyclotron resonance (ECR) plasma source enhanced unbalanced magnetron sputtering system. The results indicate that the structure of the films is sensitive to the nitrogen content. The increase in the nitrogen flow ratio leads to an increase in the sp3 content and an improvement of the tribological properties. 相似文献
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CrN films have been synthesized on Si(100) wafer by inductively coupled plasma (ICP)-enhanced radio frequency (RF) magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power. 相似文献
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Effects of growth ambience, annealing ambience and temperature on the photoluminescence (PL) emission properties of ZnO films deposited on Si (100) substrates by RF magnetron sputtering have been investigated. After annealing, the crystal quality of ZnO films was markedly improved, and the intensity of UV emission peak increased obviously. By varying the flow rate ratio of O2/Ar, annealing atmosphere in oxygen-deficient or oxygen-rich ambience and heating temperature during deposition, the evolution of peak intensities and positions for blue and green emission is formed. This is attributed to the deposition and annealing parameters that control the desorptions and adsorptions of oxygen atoms on the films, and leads to the changes of concentrations of Zinc and oxygen vacancies in the films. 相似文献