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对高Al组分AlxGa1-xN(x=50%)进行了ICP刻蚀实验研究,在刻蚀深度相同的前提条件下,对比分析了ICP腔室压力与AlGaN表面损伤之间的相互关系,并讨论了低温热退火对ICP刻蚀损伤的修复作用.XPS测试结果表明,与未经刻蚀的AlGaN表面相比,ICP刻蚀之后的AlGaN表面其表面氮空位VN明显增多,且Al2p、Ga3d等峰位均向高结合能方向漂移.分析讨论发现,ICP腔室压力过小或过大均不利于获得低损伤的刻蚀表面,此外,低温热退火(380℃-200s)对表面氮空位有一定的修复作用,但修复效果较为有限. 相似文献
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通过分别改变电感耦合等离子体(ICP)刻蚀过程中的ICP功率和DC偏压,对ICP刻蚀GaN材料的工艺条件和损伤情况进行了系统的研究。刻蚀后表面的损伤和形貌通过扫描电子显微镜(SEM)、原子力显微镜(AFM)、电子能谱(EDS)、荧光光谱(PL)等技术进行表征和分析。实验结果表明,刻蚀速率随ICP功率和DC偏压的增加而增加;刻蚀损伤与DC偏压成正比,而与ICP功率的关系较为复杂。实验中观测到刻蚀后GaN样品的荧光光谱带边发射峰和黄带发射峰的强度均有明显下降,这意味着刻蚀产生的缺陷中存在非辐射复合中心,并且该非辐射复合中心的密度与DC偏压成正比。为了兼顾高刻蚀速率和低刻蚀损伤,建议使用高ICP功率(450 W)和低DC偏压(300 V)进行ICP刻蚀。 相似文献
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ICP刻蚀技术在808 nm激光器中的应用 总被引:1,自引:0,他引:1
主要研究了GaAlAs/GaAs多层结构波导的ICP(inductiveIy coupled plasma)刻蚀,评述了使用PECVD制作的SiO2做掩膜的优点,分析了气体选择比对侧向钻蚀控制的影响,并初步分析了刻蚀损伤.比较了不同工艺参数对于刻蚀图形的影响,包括刻蚀侧壁角度,刻蚀表面平整度,选择比,侧向钻蚀等几个方面,并对ICP刻蚀对激光器性能的影响.通过对刻蚀图形的控制,使2 in.芯片内均匀性<±5%,侧壁角达到79°-81°,最后给出了经干法与湿法刻蚀后,器件的一些性能参数. 相似文献
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通过电流-电压法(I-V),电容-电压法(C-V)对n-GaN材料的ICP(感应耦合等离子体)刻蚀样品和未刻蚀样品上的肖特基势垒二极管的电学特性进行了分析.利用原子力显微镜(AFM)和扫描电镜(SEM)对刻蚀样品的表面形貌,以及退火前后肖特基接触金属的表面形貌变化进行了研究.试验表明,ICP刻蚀会在GaN表面引入损伤,形成电子陷阱能级从而引起肖特基二极管的势垒高度降低,理想因子增大,反向泄漏电流增大.刻蚀样品在400 ℃热退火可以恢复二极管的电特性,退火温度到600 ℃时二极管特性要好于未刻蚀的样品. 相似文献
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基于凹槽栅增强型氮化镓高电子迁移率晶体管(GaN HEMT)研究了不同的栅槽刻蚀工艺对GaN器件性能的影响。在栅槽刻蚀方面,采用了一种感应耦合等离子体(ICP)干法刻蚀技术与高温热氧化湿法刻蚀技术相结合的两步法刻蚀技术,将AlGaN势垒层全部刻蚀掉,制备出了阈值电压超过3 V的增强型Al_2O_3/AlGaN/GaN MIS-HEMT器件。相比于传统的ICP干法刻蚀技术,两步法是一种低损伤的自停止刻蚀技术,易于控制且具有高度可重复性,能够获得更高质量的刻蚀界面,所制备的器件增强型GaN MIS-HEMT器件具有阈值电压回滞小、电流开关比(ION/IOFF)高、栅极泄漏电流小、击穿电压高等特性。 相似文献
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A. T. Ping A. C. Schmitz I. Adesida M. Asif Khan Q. Chen J. W. Yang 《Journal of Electronic Materials》1997,26(3):266-271
Dry etch-induced damage has been investigated using Pd Schottky diodes fabricated on n-type GaN surfaces that were etched
by reactive ion etching in SiCl4 and Ar plasmas. Damage was evaluated by measuring the current-voltage, current-voltage-temperature, and capacitance-voltage
characteristics of the diodes. A plasma chemistry that includes a chemical etching component (SiCl4) was found to significantly reduce the degree of induced damage in comparison to a chemistry that uses only a physical component
(Ar). The effective barrier height, ideality factor, reverse breakdown voltage, reverse leakage current, and the effective
Richardson coefficient of diodes etched under various plasma conditions are presented. The degree of etch-induced damage was
found to depend strongly on the plasma self-bias voltage but saturates with etch time after an initial two-minute etch period.
Rapid thermal annealing was found to be effective in improving the diode characteristics of the etched GaN samples. 相似文献
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We report the enhancement of light extraction efficiency (LEE) and electrical performance in GaN-based green light-emitting diodes (LEDs) using ZnO nanorods formed on the etched surface of p-GaN. Green LEDs with hybrid ZnO nanorod structures grown on the hexagonally etched topmost layer of the LEDs, show an improvement in electroluminescence intensity that is 3.5 times higher than LEDs without any other surface treatments. The improvement in LEE in LEDs with nanohybrid structures was confirmed by finite-difference time-domain simulation analysis. Besides LEE enhancement, the surface etching effects on the reduction of leakage current of fabricated LEDs were also investigated. 相似文献
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研究了如何减小等离子体干法刻蚀导致的大肖特基漏电.用X射线光电能谱(XPS)分析刻蚀前后的AlGaN表面,发现刻蚀后AlGaN表面出现了N窄位,导致肖特基栅电流偏离热电子散射模型,N空位做为一种缺陷使得肖特基结的隧穿几率增大,反向漏电增大,肖特基势垒降低.介绍了一种AlGaN/GaN HEMTs器件退火处理方法,优化退火条件为400℃,Nz氛围退火10min.退火后,栅金属中的Ni与Ga原子反应从而减少N空穴造成的缺陷,器件肖特基反向漏电减小三个量级,正向开启电压升高,理想因子从3.07降低到了2.08. 相似文献
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对等离子体干法刻蚀形成的凹栅槽结构AlGaN/GaN HEMTs肖特基电流增加的机理进行了研究.实验表明,凹栅槽结构AIGaN/GaN HEMTs肖特基栅电流增加一个数量级以上,击穿电压有一定程度的下降.利用AFM和XPS的方法分析AlGaN表面,等离子体干法刻蚀增加了AlGaN表面粗糙度,甚至出现部分尖峰状突起,增大了栅金属与AlGaN的接触面积;另一方面,等离子体轰击使AlGaN表面出现一定量的N空位,相当于栅金属与AlGaN接触界面处出现n型掺杂层,使肖特基结的隧道效应加强,降低了肖特基势垒.由此表明,AlGaN表面粗糙度的增加以及一定量的N空位出现是引起栅电流急剧增大的根本原因. 相似文献
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K.D. Choquette G. Hasnain Y.H. Wang J.D. Wynn R.S. Freund A.Y. Cho R.E. Leibenguth 《Photonics Technology Letters, IEEE》1991,3(10):859-862
GaAs quantum well vertical-cavity surface emitting lasers fabricated using low damage reactive ion etching are discussed. Lasers which are partially and completely etched through their structure are compared. The surface recombination velocity of exposed GaAs is not exacerbated in deep etched lasers; other loss mechanisms in shallow etched lasers have comparable impact on laser performance. Etched lasers exhibit low voltage and small differential series resistance at threshold, while devices fabricated by a combination of etching and ion implantation possess lower threshold current. It is found that reactive ion etching has little additional effect on laser operation, whereas the different device structures considered do influence laser performance.<> 相似文献
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为了探讨电子铝箔经直流电腐蚀后形成隧道孔的生长机理,进一步提高电子铝箔的腐蚀工艺水平,研究了200微米HEC光箔的极限长度在硫酸浓度、温度、二级腐蚀等条件下的影响。发现只改变一级硫酸浓度而不经过二级腐蚀,隧道孔的极限生长有限,不能贯穿整个夹芯层,这可能是光箔成分和立方织构影响蚀孔的生长方向。在不添加硫酸的条件下温度对极限长度的影响非常小,低于70℃下甚至不生长隧道孔,所形成的夹芯层非常厚。而经过0.8 mol/L游离酸的二级腐蚀,隧道孔径向生长可以贯穿整个夹芯层。 相似文献
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介绍了一种新型等离子体刻蚀机的使用条件,通过对各种参数变化的组合实验,得到了最佳工艺数据.利用该刻蚀机生产的电池片刻蚀效果好,刻蚀后经检测,电池片漏电流小,并联电阻大,提高了电池片的综合性能指标. 相似文献
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《Electron Devices, IEEE Transactions on》1981,28(11):1323-1331
A dry etching technology for 1-µm VLSI has been developed. This technology led to successful fabrication of a 1-µm 256-kbit MOS RAM using electon-beam direct writing and molybdenum-polysilicon double-gate structure. Silicon nitride, silicon dioxide, phosphosilicate glass, polysilicon, single-crystal silicon, molybdenum, and aluminum are etched by parallel-plate RF diode reactors. Resist patterns are used as etching masks. The negative resist is CMS and the positive resist is FPM. Plasma polymerization is found to have significant effect on etching selectivity, undercutting, and residue. Directional etching profiles are realized and 1-µm patterns with less than 0.05-µm undercutting are obtained. High etching selectivities are achieved. Methods for preventing and removing contamination as well as damage are established. With these, dry etching proves to bring no adverse effects on device characteristics. Pattern-width fluctuations caused by negative-resist pattern foot are decreased to below 0.1 µm by a new foot trimming technique. Resist step coverage is also clarified. 相似文献