GaInP/GaAs HBT Sub-Harmonic Gilbert Mixers Using Stacked-LO and Leveled-LO Topologies

This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mum GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation     

4.9-GHz low-phase-noise transformer-based superharmonic-coupled GaInP/GaAs HBT QVCO

The low-phase-noise GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (QVCO) using transformer-based superharmonic coupling topology is demonstrated for the first time. The fully integrated QVCO at 4.87GHz has phase noise of -131dBc/Hz at 1-MHz offset frequency, output power of -4dBm and the figure of merit (FOM) -198dBc/Hz. The state-of-the-art phase noise FOM is attributed to the superior GaInP/GaAs HBT low-frequency device noise and the high quality transformer formed on the GaAs semi-insulating substrate.     

5.2/5.7-GHz 48-dB Image Rejection GaInP/GaAs HBT Weaver Down-Converter Using LO Frequency Quadrupler

A GaInP/GaAs heterojunction bipolar transistor (HBT) down-converter using the Weaver architecture is demonstrated in this paper. The Weaver system is a double-conversion image rejection heterodyne system which requires no bandpass filters in the signal path and no quadrature networks. The Weaver down-converter has the image rejection ratios of 48 dB and 44 dB when the RF frequency is 5.2 GHz and 5.7 GHz, respectively. A new frequency quadrupler is employed in the down-converter to generate the local oscillator (LO) signals. The frequency quadrupler is designed to minimize the phase error when generating LO signals and thus the image rejection performance is improved. A diagrammatic explanation using the complex mixing technique to analyze the image rejection mechanism of the Weaver architecture is developed in this paper. From our analysis, the image rejection can be further improved by making the LO₁ and LO₂ signals coherent     

自对准GaInP/GaAs HBT器件

利用发射极金属掩蔽进行内切腐蚀的方法研制成自对准InGaP/GaAs异质结双极晶体管 (HBT),其特征频率(ft)达到54GHz,最高振荡频率(fmax)达到71GHz,并且,这种方法工艺简单,成品率高.文中还对该结果进行了分析,提出了进一步提高频率特性的方法.     

自对准GaInP/GaAs HBT器件

利用发射极金属掩蔽进行内切腐蚀的方法研制成自对准InGaP/GaAs异质结双极晶体管 (HBT),其特征频率(ft)达到54GHz,最高振荡频率(fmax)达到71GHz,并且,这种方法工艺简单,成品率高.文中还对该结果进行了分析,提出了进一步提高频率特性的方法.     

DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology

A wideband GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with 11 dB single-ended conversion gain is demonstrated. The input return loss is better than 10 dB for frequencies up to 9 GHz. The single-to-differential input stage in a Gilbert micromixer renders good wideband frequency response and eliminates the need for common-mode rejection. IP/sub 1dB/=-17 dBm and IIP/sub 3/=-7 dBm are achieved for a small local oscillator power of -2 dBm when LO=5.35 GHz and RF=5.7 GHz.     

A 4.5 to 9.2-GHz Wideband Semidynamic Frequency Divide-by-1.5 in GaInP/GaAs HBT

A semidynamic frequency divide-by-1.5 circuit comprises an image-rejection mixer and a static divide-by-2 in its feedback path. Wideband suppression of unwanted tones is achieved by employing a tunable image-rejection mixer and a tunable single-stage polyphase filter. Implemented in GaInP/GaAs heterojunction bipolar transistor technology, the divide-by-1.5 operates over the input frequency range of 4.5 to 9.2GHz with better than -20-dBc suppressions of 1/3timesf_in and f_in components, while dissipating 29 mA from a 4.1-V supply     

A 5.2-GHz GaInP/GaAs HBT double-quadrature downconverter with polyphase filters for 40-dB image rejection

A 5.2-GHz 11-dB gain, IP/sub 1 dB/=-17 dBm and IIP/sub 3/=-10 dBm double-quadrature Gilbert downconversion mixer with polyphase filters is demonstrated by using GaInP/GaAs heterojunction bipolar transistor (HBT) technology. The image rejection ratio is better than 40 dB when LO=5.17 GHz and intermediate frequency (IF) is in the range of 15 MHz to 40 MHz. The Gilbert downconverter has four-stage RC-CR IF polyphase filters for image rejection. Polyphase filters are also used to generate local (LO) and radio frequency (RF) quadrature signals around 5 GHz in the double-quadrature downconverter because GaAs has accurate thin film resistors and the low parasitic semi-insulating substrate.     

最高振荡频率为46 GHz的GaInP／GaAs异质结双极晶体管

最高振荡频率为４６　ＧＨｚ的ＧａＩｎＰ／ＧａＡｓ异质结双极晶体管钱峰，陈新宇，肖秀红，姚晓峨，周天舒，潘菁，陈效建（南京电子器件研究所，２１００１６）齐鸣，李爱珍（中科院上海冶金所，２０００５０）Ａｆ＿（ｍａｘ）＝４６ＧＨｚＧａＩｎＰ／ＧａＡｓＨＢＴ...     

High-Performance 94-GHz Single-Balanced Diode Mixer Using Disk-Shaped GaAs Schottky Diodes

We present a high-performance 94-GHz single-balanced monolithic millimeter-wave integrated-circuit (MMIC) mixer using the disk-shaped GaAs Schottky diodes grown on an n/$hbox{n}+$ epitaxial structure. Due to the superior characteristics of the GaAs diodes with high diode-to-diode uniformity, the mixer shows a conversion loss of 5.5 dB at 94 GHz, a 1-dB compression point $(P_{1 hbox{-}{rm dB}})$ of 5 dBm, and high local-oscillator to radio-frequency isolation above 30 dB in an RF frequency range of 91–97 GHz. To our knowledge, the fabricated mixer shows the best performance in terms of conversion loss at 94 GHz and $P_{1 hbox{-}{rm dB}}$ among the W-band MMIC mixers without amplifier circuits.      

A 17-GHz Push–Push VCO Based on Output Extraction From a Capacitive Common Node in GaInP/GaAs HBT Technology

This paper presents a new push-push voltage-controlled oscillator (VCO) technique that extracts a second harmonic output signal from a capacitive common node in a negative-g_m oscillator topology. The generation of the second harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing: 1) significant voltage clipping and 2) different rise and fall times during the switching operation of the core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region than a conventional push-push technique using an emitter common node. A prototype 17-GHz VCO realized in GaInP/GaAs HBT technology produces an output power of -6dBm and a phase noise of -110.4dBc/Hz at 1-MHz offset, which is equivalent to a VCO figure-of-merit of -184.3dBc/Hz, while drawing 4.38 mA from a 3.0-V supply     

A 25-GHz ultra-low phase noise InGaP/GaAs HBT VCO

A 25-GHz monolithic voltage controlled oscillator (VCO) has been designed and fabricated in a commercial InGaP/GaAs heterojunction bipolar transistor (HBT) process. This balanced VCO has a novel topology using a feedback /spl pi/-network and a common-emitter transistor configuration. Ultra-low phase noise is achieved: -106 dBc/Hz and -130 dBc/Hz at 100kHz and 1-MHz offset frequency, respectively. To the authors' knowledge, this is the lowest phase noise achieved in a monolithic microwave integrated circuit (MMIC) VCO at such high frequency. The single-ended output power is -1 dBm. It can be tuned between 25.33GHz and 25.75GHz using the base-collector junction capacitor of the HBT as a varactor. The dc power consumption is 90mW for a 9-V supply. An excellent figure-of-merit of -195 dBc/Hz is obtained.     

A 2-GHz clocked AlGaAs/GaAs HBT byte-slice datapath chip

A byte-slice datapath for exploring multi-chip RISC processor development in AlGaAs-GaAs heterojunction bipolar transistor (HBT) technology has been designed, fabricated and tested. The circuits are implemented using differential current-mode logic (CML) and emitter-coupled logic (ECL) with signal swings of 250 mV. Each datapath chip contains a single slice, including an 8-bit by 32-word single-port register file with a 230-ps read access time, and an 8-bit carry-select adder with a 140-ps select path and a 380-ps ripple-carry path. Each unpackaged die was tested using an at-speed boundary scan test scheme. The register file and adder carry chain are also implemented in a special test chip for accurate performance characterization of these critical circuits     

A 2-GHz GaAs HBT RF Pulsewidth Modulator

RF pulsewidth modulation (PWM) has been proposed as an efficiency improving technique for power amplifiers (PAs) handling varying envelope signals. The core idea is to modulate the varying envelope into a square-wave signal such that the width of each pulse is varied according to the envelope, and any phase information is contained in the timing of the pulses. The square wave signal can give a theoretical efficiency of 100% for the subsequent PA. Such a system differs significantly from a conventional up-conversion and PA and, therefore, a significant design challenge results. The first important step is to generate the PWM signal. This paper demonstrates a functional modulator for Universal Mobile Telecommunications System operating at 2 GHz. The modulator is designed in a GaAs HBT process and uses low-frequency feedback combined with predistortion to obtain a high spectral purity. Measurements show a Universal Mobile Telecommunications System PWM signal with more than 10-dB margin to the modulation mask and an error vector magnitude of less than 1.5% rms (requirement: 17.5%).     

Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

We have investigated the effect of high-temperature annealing on device performance of GaInP/GaAs HBTs using a wide range of MOVPE growth parameters for the C-doped base layer. Carbon doping was achieved either via TMG and AsH₃ only or by using an extrinsic carbon source. High-temperature annealing causes degradation of carbon-doped GaAs in terms of minority carrier properties even at doping levels of p=1 × 10¹⁹ cm⁻³. The measured reduction in electron lifetime and luminescence intensity correlates with HBT device results. It is shown that the critical temperature where material degradation starts is both a function of doping method and carbon concentration.     

'High frequency' quasiplanar GaInP/GaAs HBT with CBE selective collector contact regrowth

Quasiplanar GaInP/GaAs heterojunction bipolar transistors (HBTs) with selective regrowth of the collector contact are reported. Such devices have a planar surface topology which should allow large scale integration. The multilayer HBT structure and the selective regrown collector contact are realised by chemical beam epitaxy (CBE). Cutoff frequency and maximum oscillation frequency of 30 and 25 GHz respectively, have been obtained for devices with 2*15 mu m/sup 2/ emitter-base junction area.<>     

A K-Band CMOS Quadrature Frequency Tripler Using Sub-Harmonic Mixer

A low-power frequency tripler is designed by using the sub-harmonic mixer configuration for K-band applications. The proposed circuit features quadrature signal generation, applicable to LO signal synthesis in millimeter-wave wireless transceivers. It achieves conversion gain of $-$5.7 dB at the output frequency of 21 GHz. Implemented in a 0.18 $mu{rm m}$ CMOS technology, the circuit consumes power of 7.5 mW with 1.5 V supply voltage. The entire die occupies an area of $1000times 1050 mu{rm m}^{2}$.      

Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology

In this paper, a sub-millimeter-wave HBT oscillator is reported. The oscillator uses a single-emitter 0.3 m15 m InP HBT device with maximum frequency of oscillation greater than 500 GHz. The passive components of the oscillator are realized in a two metal process with benzocyclobutene used as the primary transmission line dielectric. The oscillator is implemented in a common base topology due to its inherent instability. The design includes an on-chip resonator, output matching circuitry, and injection locking port. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Additionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. This is the first fundamental HBT oscillator operating above 300 GHz.