共查询到19条相似文献,搜索用时 203 毫秒
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利用构成Zr-Ti-Ni稳态准晶合金体系组元间具有负的混合焓而能发生放热反应的热力学特征,进行了激光诱导自蔓延反应合成准晶的工艺研究.研究结果表明,激光诱导自蔓延反应合成Zr44Ti40Ni16,Ti41.5Zr41.5Ni17和Ti40Zr40Ni20产物皆是由准晶I相,7(Ti/Zr)固熔体及具有MgZn2晶体结构的Laves相所组成,但各组成相的含量有所不同.当反应体系成分由Zr44Ti40Ni16依次变为Ti41.5Zr415Ni17和Ti40Zr40Ni20时,产物中准晶相的相对含量逐渐降低.随着合成产物中准晶含量的增加,合成样品的显微硬度增加. 相似文献
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Pt层对Ni/Si(100)固相反应NiSi薄膜高温稳定性的增强效应 总被引:2,自引:1,他引:1
研究了顺次淀积在 Si (10 0 )衬底上的 Ni/ Pt和 Pt/ Ni的固相硅化反应 .研究发现 ,当 1nm Pt作为中间层或覆盖层加入 Ni/ Si体系中时 ,延缓了 Ni Si向 Ni Si2 的转变 ,相变温度提高 .对于这种双层薄膜体系 ,80 0℃退火后 ,XRD测试未检测到 Ni Si2 相存在 ;85 0℃退火后的薄膜仍有一些 Ni Si衍射峰存在 . 80 0℃退火后的薄膜呈现较低的电阻率 ,在 2 3— 2 5 μΩ· cm范围 .上述薄膜较 Ni/ Si直接反应生成膜的热稳定性提高了 10 0℃以上 .这有利于Ni Si薄膜材料在 Si基器件制造中的应用 . 相似文献
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采用真空蒸镀方法在Si衬底上制备了Si/Au、Si/Ni/Au和Si/Ti/Au结构多层膜,进行多种条件下的退火实验,研究了不同黏附层对Au/Si共晶体系中硅扩散的影响.实验结果表明,黏附层对硅的扩散起到阻挡作用,Ti层与Ni层作为阻挡层在较低温度下发生失效,退火气氛对阻挡层的失效具有显著影响.这表明Au/Si体系中扩散阻挡层失效的机制并不是直接的固相反应.文章提出势垒模型来解释扩散阻挡层的失效机制. 相似文献
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研究了顺次淀积在Si(100)衬底上的Ni/Pt和Pt/Ni的固相硅化反应.研究发现,当1nm Pt作为中间层或覆盖层加入Ni/Si体系中时,延缓了NiSi向NiSi2的转变,相变温度提高.对于这种双层薄膜体系,800℃退火后,XRD测试未检测到NiSi2相存在;850℃退火后的薄膜仍有一些NiSi衍射峰存在.800℃退火后的薄膜呈现较低的电阻率,在23—25μΩ*cm范围.上述薄膜较Ni/Si直接反应生成膜的热稳定性提高了100℃以上.这有利于NiSi薄膜材料在Si基器件制造中的应用. 相似文献
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用于半导体激光器热沉的金刚石膜/Ti/Ni/Au金属化体系的研究 总被引:2,自引:2,他引:0
提出了一种用于半导体激光器热沉的金刚石膜/ Ti/ Ni/ Au金属化体系.采用金属化前期预处理、电子束蒸镀技术和后续低温真空热处理,金属层和金刚石膜之间获得了良好的结合强度.AES分析表明Ti/ Ni/ Au金刚石膜金属化体系中,Ni层起到了良好的阻挡效果;XRD显示预处理过的金刚石膜,镀膜后经过6 73K,2 h低温真空热处理,Ti/金刚石膜界面形成Ti O和Ti C;RBS分析进一步证实该金属化体系在6 73K,1h真空加热条件下具有良好的热稳定性.采用完全相同的半导体激光器结构,金刚石膜热沉的热阻仅为氮化铝热沉的4 0 % . 相似文献
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Sung-Jae Joo Sangwon Baek Sang-Cheol Kim Jeong-Soo Lee 《Journal of Electronic Materials》2013,42(10):2897-2904
In this work, Ti/Ni bilayer contacts were fabricated on both p +- and n +-4H-SiC formed by ion implantation, and the effects of the Ti interlayer on the contact resistance and interfacial microstructure were studied. Adoption of a thin (10 nm) Ti interlayer resulted in specific contact resistance of 4.8 μΩ cm2 and 1.3 mΩ cm2 on n +- and p +-4H-SiC, respectively, comparable to the values for contacts using only Ni. Moreover, contacts using Ti/Ni provide a flat and uniform interface between Ni2Si and SiC, whereas discontinuous, agglomerated Ni2Si islands are formed without the use of a Ti interlayer. In addition, the Ti interlayer was demonstrated to effectively dissociate the thin oxide film on SiC, which is advantageous for low-resistance, reliable ohmic contact formation. In summary, use of a Ti/Ni bilayer is a promising solution for one-step formation of ohmic contacts on both p +- and n +-4H-SiC, being especially suitable for SiC n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) fabrication. 相似文献
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研究了在 Co/Ti/Si结构中加入非晶 Ge Si层对 Co Si2 /Si异质固相外延的影响 ,用离子束溅射方法在Si衬底上制备 Co/Ge Si/Ti/Si结构多层薄膜 ,通过快速热退火使多层薄膜发生固相反应。采用四探针电阻仪、AES、XRD、RBS等方法进行测试。实验表明 ,利用 Co/Ge Si/Ti/Si固相反应形成的 Co Si2 薄膜具有良好的外延特性和电学特性 ,Ti中间层和非晶 Ge Si中间层具有促进和改善 Co Si2 外延质量 ,减少衬底耗硅量的作用。Ge原子的存在能够改善外延 Co Si2 薄膜的晶格失配率 相似文献
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Yi-Fei Huang Guo-Ping Ru Xin-Ping Qu Bing-Zong Li 《Microelectronic Engineering》2008,85(10):2013-2015
The characteristics of Ni/Si(1 0 0) solid-state reaction with yttrium (Y) addition are studied in this paper. Film stacks of Ti(20 nm)/TiN(40 nm)/Ni(8 nm)/Y(4 nm)/Ni(8 nm)/Si(1 0 0) and Ti(20 nm)/TiN(40 nm)/Ni(7 nm)/Y(6 nm)/Ni(7 nm)/Si(1 0 0) were prepared by physical vapor deposition. After solid-state reaction between metal films and Si was performed by rapid thermal annealing, various material analyses show that NiSi forms even with the addition of Y, and Ni silicidation is accompanied with Y diffusion in Ni film toward its top surface. The electrical characteristic measurements reveal that no significant Schottky barrier height modulation with the addition of Y occurs. 相似文献
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Yu-Long Jiang Guo-Ping Ru Jian-Hai Liu Xin-Ping Qu Bing-Zong Li 《Journal of Electronic Materials》2004,33(7):770-773
Reaction characteristics of ultra-thin Ni films (5 nm and 10 nm) on undoped and highly doped (As-doped and B-doped) Si (100)
substrates are investigated in this work. The sheet resistance (Rs) measurements confirm the existence of a NiSi salicidation
process window with low Rs values within a certain annealing temperature range for all the samples except the one of Ni(5
nm) on P+-Si(100) substrate (abnormal sample). The experimental results also show that the transition reaction to low resistivity phase
NiSi is retarded on highly doped Si substrates regardless of the initial Ni film thickness. Micro-Raman and x-ray diffraction
(XRD) measurement show that NiSi forms in the process window and NiSi2 forms in a higher temperature annealing process for all normal substrates. Auger electron spectroscopy (AES) results for
the abnormal sample show that the high resistivity of the formation film is due to the formation of NiSi2. 相似文献
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Xiong-wei Yue Li-chun Zhang Yu-zhi Gao Hai-yan Jin 《Microelectronic Engineering》2008,85(8):1723-1727
The effect of a thin Hafnium interlayer on the thermal stability of NiSi film has been investigated. Both X-ray diffraction and Raman spectra show that no high resistivity NiSi2 appears in the Hf-additioned films which were post-annealed at temperatures ranging from 600 °C to 800 °C. Auger electron spectroscopy and Rutherford back scattering show that the Hf interlayer has moved to the top of the film after rapid thermal annealing, working as the diffusion barrier for upper Ni atoms. The three-dimensional surface morphology by atom force microscopy shows that the agglomeration of NiSi is effectively suppressed, which is attributed to the barrier effect of the Hf interlayer. The fabricated Ni(Hf)Si/Si Schottky diodes still displays good current-voltage characteristics even after annealed at temperatures varied from 650 °C to 800 °C, which further show that the Hf interlayer can improve the thermal stability of NiSi. 相似文献
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首次给出了一种具有规律性的能用来提高镍硅化物热稳定性的方法.依据此方法,摸索出在Ni中分别以夹层金属掺入Pt、Mo、Zr、W金属来提高NiSi硅化物的热稳定性.概括总结了掺人难熔金属M后形成的三元镍硅化物Ni(M)Si热稳定性能.实验结果表明,Ni(M)Si硅化物薄膜四种镍硅化物薄膜有相同的热稳定性.以Ni/W/Ni/... 相似文献