Growth and characterization of epitaxial anatase TiO2(001) on SrTiO3-buffered Si(001) using atomic layer deposition

Epitaxial anatase titanium dioxide (TiO₂) films have been grown by atomic layer deposition (ALD) on Si(001) substrates using a strontium titanate (STO) buffer layer grown by molecular beam epitaxy (MBE) to serve as a surface template. The growth of TiO₂ was achieved using titanium isopropoxide and water as the co-reactants at a substrate temperature of 225-250 °C. To preserve the quality of the MBE-grown STO, the samples were transferred in-situ from the MBE chamber to the ALD chamber. After ALD growth, the samples were annealed in-situ at 600 °C in vacuum (10^− 7 Pa) for 1-2 h. Reflection high-energy electron diffraction was performed during the MBE growth of STO on Si(001), as well as after deposition of TiO₂ by ALD. The ALD films were shown to be highly ordered with the substrate. At least four unit cells of STO must be present to create a stable template on the Si(001) substrate for epitaxial anatase TiO₂ growth. X-ray diffraction revealed that the TiO₂ films were anatase with only the (004) reflection present at 2θ = 38.2°, indicating that the c-axis is slightly reduced from that of anatase powder (2θ = 37.9°). Anatase TiO₂ films up to 100 nm thick have been grown that remain highly ordered in the (001) direction on STO-buffered Si(001) substrates.     

Self-limiting growth of anatase TiO2: A comparison of two deposition techniques

Self-limiting deposition of titanium dioxide thin films was accomplished using pulsed plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (PEALD) at low temperatures (T < 200 °C) using TiCl₄ and O₂. TiCl₄ is shown to be inert with molecular oxygen at process conditions, making it a suitable precursor for these processes. The deposition kinetics were examined as a function of TiCl₄ exposure and substrate temperature. The quality of the anatase films produced by the two techniques was nominally identical. The key distinctions are found in precursor utilization and conformality. Pulsed PECVD requires 20 times less TiCl₄, while PEALD must be used to uniformly coat complex topographies.     

Thermal properties of TiO2 films grown by atomic layer deposition

We study the thermal properties of amorphous TiO₂ thin films of various thicknesses t, grown by atomic layer deposition. The thermo-optic coefficient dn/dT and the temperature coefficient dρ/dT of film density ρ are determined from ellipsometric data in wavelength range 380 < λ < 1800 nm with the Cauchy model and the Lorentz-Lorenz relation. It is found that dn/dT exhibits negative values for films with t < 150 nm and positive values for thicker films, while no significant changes in the two coefficients take place if t < 200 nm. A qualitative physical explanation based on porosity of the thin films is suggested. Films with t = 60 nm are illustrated in detail at λ = 640 nm: the room-temperature values of the coefficients are found to be dn/dT = − 3.1 × 10^− 5 °C^− 1 and dρ/dT = − 4.8 × 10^− 5g cm^− 3° C^− 1.     

Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics

Atomic layer deposition was applied to fabricate metal oxide films on planar substrates and also in deep trenches with appreciable step coverage. Atomic layer deposition of Ru electrodes was realized on planar substrates. Electrical and structural behaviour of HfO₂-TiO₂ and Al₂O₃-TiO₂ nanolaminates and mixtures as well as Al₂O₃ films were evaluated. The lowest leakage current densities with the lowest equivalent oxide thickness were achieved in mixed Al₂O₃-TiO₂ films annealed at 700 °C, compared to all other films in as-deposited state as well as annealed at 900 °C. The highest permittivities in this study were measured on HfO₂-TiO₂ nanolaminates.     

Fabricating highly active mixed phase TiO2 photocatalysts by reactive DC magnetron sputter deposition

Recent work points out the importance of the solid-solid interface in explaining the high photoactivity of mixed phase TiO₂ catalysts. The goal of this research is to probe the structural and functional relationships of the solid-solid interface created by the reactive DC magnetron sputtering of titanium dioxide. We show that sputter deposition provides excellent control of the phase and interface formation. We explored the effects of the process parameters of pressure, oxygen partial pressure, target power, substrate bias (RF), deposition incidence angle, and post annealing treatment on the structural and functional characteristics of the catalysts. We have successfully made pure and mixed phase TiO₂ films. These films were characterized with AFM, SEM, TEM, and XRD to determine surface morphology, phase distribution and phase content. The performance as photocatalytic surfaces was measured and compared (normalized for surface area) to mixed phase TiO₂ fabricated by other methods, including flame hydrolysis powders, and sol-gel deposited TiO₂ films. The sputtered mixed phase materials were far superior to the commercial standard (Degussa P25) and sol-gel TiO₂ as measured by the gas phase oxidation of the air pollutant acetaldehyde under UV illumination. These results demonstrate that reactive DC magnetron sputtering is a powerful tool for investigating the role of the solid-solid interface in influencing photocatalytic activity. In addition, our work illustrates the feasibility of reactive DC magnetron sputtering as a practical commercial technique for manufacturing highly active nanostructured TiO₂ photocatalysts.     

Neural cell growth on TiO2 anatase nanostructured surfaces

Titanium oxides have anti-inflammatory activity and tunable electrochemical properties that make them attractive materials for biomedical applications. This work investigated the compatibility of nanometric coatings of low-temperature phases of TiO₂ with neurons in 4-day and 10-day cultures, using different cell densities to quantify cell survival and neurite extension. TiO₂ films were prepared by sol–gel and thermal treatment (250–450 °C) of hydrolyzed titanium tetra-isopropoxide on electrically conducting or insulating slides. The conducting substrates were not passivated by the nanometric oxide layer and could be used as electrodes. Characterization of the films showed nano-structured TiO₂ containing exclusively Ti⁺⁴ valence in anatase and amorphous phases. When coated with polylysine, all films permitted good neuron attachment and survival for at least ten days in culture. However, they generally reduced neurite growth compared to cell culture borosilicate glass, with dendrites more affected than axons. The analyses of surface topography, hydrophilicity, charge and chemical composition revealed that TiO₂ chemistry was the main factor responsible for neurite inhibition.     

On the initial growth of atomic layer deposited TiO2 films on silicon and copper surfaces

Atomic layer deposition (ALD) of TiO₂ using tetrakis(diethylamino)titanium precursor and H₂O was studied on silicon and copper surfaces in order to examine differences in nucleation. Both surfaces were patterned on the same substrate to assure identical deposition conditions. Spectral ellipsometry, X-ray photoelectron spectroscopy and surface profilometry were used to probe nucleation phenomena, growth rates, and surface morphology on both surfaces. The TiO₂ deposition on copper was found to exhibit a significant induction period of about 20-25 ALD cycles with no observable TiO₂ during the first 10-15 cycles on the copper side; in contrast, no such inhibited growth was observed in the TiO₂ deposition on silicon. This result opens up potential for selective ALD of TiO₂ films on silicon-based substrates patterned with a metal without the use of a mask, a self-assembled monolayer or soft lithography which is impractical for some nanoscale semiconductor fabrication processes. After film nucleation, the TiO₂ growth rate on both surfaces was found to be 0.10 nm/cycle.     

Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces

The consumption of the surface native oxides is studied during the atomic layer deposition of TiO₂ films on GaAs (100) surfaces. Films are deposited at 200 °C from tetrakis dimethyl amido titanium and H₂O. Transmission electron microscopy data show that the starting surface consists of ~2.6 nm of native oxide and X-ray photoelectron spectroscopy indicates a gradual reduction in the thickness of the oxide layer as the thickness of the TiO₂ film increases. Approximately 0.1-0.2 nm of arsenic and gallium suboxide is detected at the interface after 250 process cycles. For depositions on etched GaAs surfaces no interfacial oxidation is observed.     

Dopamine/TiO2 hybrid thin films prepared by the liquid phase deposition method

Liquid phase deposition method is applied to one-step production of a hybrid material composed by dopamine(DA) and TiO₂ anatase. An optimized amount of the enediol derivative is added to a fluoride titania precursor aqueous solution in order to entrap this modifier within the growing TiO₂, yielding a DA/TiO₂ nanocomposite material. Uniform, well-adhered and brown-colored thin films are deposited on indium tin oxide covered glass substrate. The DA/TiO₂ hybrid material has been characterized by infrared spectroscopy, electronic microscopy, X-ray diffraction and UV-vis spectroscopy. The formation of the hybrid material seems to be reasonably explained by linkage of different TiO₂ nanocrystallites taking advantage of both enediol and amine groups of DA.     

Plasma-enhanced chemical vapor deposition of TiO2 thin films for dielectric applications

Amorphous TiO₂ thin films were formed by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of titanium IV isopropoxide (Ti(O-i-C₃H₇)₄) and oxygen. The deposition rate was found to be weakly activated, with an apparent activation energy of 4.5 kJ/mol. The deposition rate increased with equivalence ratio and decreased with plasma power. This dependence on atomic oxygen density was consistent with behavior observed in other metal oxide PECVD systems. Metal-insulator-silicon devices were fabricated, and characterized using capacitance-voltage measurements. The apparent dielectric constant of the TiO₂ thin films increased from 15 to 82 with film thickness. The observed variations were consistent with the formation of an interfacial SiO₂ layer. Assuming that a TiO₂/SiO₂ bilayer behaves as two capacitors in series, an intrinsic TiO₂ dielectric constant of 82 ± 10 and an interfacial SiO₂ layer thickness of 3 ± 1 nm were extracted from electrical measurements.     

Deoxidisation and phase analysis of plasma sprayed TiO2 by X-ray Rietveld method

It is fundamentally important to determine the deoxidisation and phase compositions of plasma sprayed TiO₂ coatings containing anatase. In the present study, plasma sprayed porous TiO₂ coatings containing anatase were prepared using anatase powder and both Ar-He-H₂ and Ar-He-N₂ plasma gases. The deoxidisation of TiO₂ and phase compositions of the starting powder and the prepared coatings were examined using X-ray Rietveld method by refining their crystalline parameters and scale factors. The refined oxygen occupancies showed that there were about 0.08 and 0.1 formula units of oxygen deficiencies for the rutile and anatase phases of the coatings, respectively. Such degrees of deoxidisation and the other crystalline parameters appeared independent of the plasma spraying process parameters. With considerations of the presence of organic adhesive in the starting powder and the formation of titanium ethoxide in the coatings, the degrees of deoxidisation estimated by the X-ray Rietveld method were slightly higher than those quantified by the thermogravimetry curves. The phases of the coatings determined from the refined scale factors were mainly composed of rutile with 10.0% to 22.5% anatase by weight, and the latter content increased with decreasing the intensity of the plasma jet.     

Preparation and photocatalytic study of fibrous K0.3Ti4O7.3(OH)1.7–anatase TiO2 nanocomposite photocatalyst

Nanocomposite of K_0.3Ti₄O_7.3(OH)_1.7 fiber and anatase TiO₂ nanoparticle was prepared by hydrothermal treatment of the K_0.3Ti₄O_7.3(OH)_1.7 which was synthesized by calcination of K₂CO₃ and TiO₂ at 1250 °C followed by refluxing in nitric acid. Effects of hydrothermal treatment conditions such as temperature and time on morphology, phase composition and crystal structure of the nanocomposites were extensively studied. Photocatalytic activities of the catalysts prepared at various hydrothermal conditions were evaluated by means of methylene blue decomposition under blacklight irradiation.     

Effect of substrate deformation on functional properties of atomic-layer-deposited TiO2 coatings on stainless steel

Changes in the functional properties of 50 and 100 nm thick anatase-type and of 100 and 150 nm thick rutile-type atomic-layer-deposited TiO₂ coatings with increasing tensile deformation of AISI 304 stainless steel substrate up to 40% strain were studied. All as-received coatings exhibited good photoelectrochemical and photocatalytic activity as well as photohydrophilicity, but the photocatalytic activity of the rutile-type coatings was only one third of that of the anatase-type coatings. The deformation induced changes in the functional properties depended strongly on the type and thickness of the coating. For the 50 nm anatase-type coating, all the monitored functional properties were severely reduced when the applied strain was 1.4% and higher. Rest of the coatings showed also considerable, but more gradual, decrease of the photoelectrochemical and photocatalytic activity with increasing strain. Least affected was the photohydrophilicity which remained approximately constant until 30% applied strain for the 100 nm coatings, and showed some variation for the 150 nm coating. The possible reasons for the observed behavior are discussed.     

Microanalysis of Pd and V-doped TiO2 thin films prepared by sputtering

Thin films of TiO₂ doped with vanadium and palladium, prepared by the magnetron sputtering method, were studied by means of X-ray diffraction (XRD), Scanning Electron Microscopy with Energy Disperse Spectrometer (SEM-EDS) and Atomic Force Microscopy (AFM). Investigations have brought important information about microstructure due to dopant incorporation in the TiO₂ host lattice. Directly after deposition thin films were XRD-amorphous and SEM investigations did not reveal details on the microstructure. Analysis of the topography of prepared thin films required application of Atomic Force Microscope. The AFM images show that as-deposited sample was dense with grain sizes varied in the range of 5.5 nm-10 nm, that indicated high quality nanocrystalline behavior. Additional annealing results in the formation of three phases in the thin film, e.g. (Ti,V)O₂ — solid solution, PdO and metallic inclusions of Pd. SEM-EDS system allowed analysis of the elemental composition, especially the V one, which lines have not been evidenced in the XRD diffraction pattern. EDS maps show homogenous distribution of elements Ti, O, V, Pd in prepared thin films.     

Effect of atomic layer deposited ultra thin HfO2 and Al2O3 interfacial layers on the performance of dye sensitized solar cells

The objective of this work was to investigate the improvement in performance of dye sensitized solar cells (DSSCs) by depositing ultra thin metal oxides (hafnium oxide (HfO₂) and aluminum oxide (Al₂O₃)) on mesoporous TiO₂ photoelectrode using atomic layer deposition (ALD) method. Different thicknesses of HfO₂ and Al₂O₃ layers (5, 10 and 20 ALD cycles) were deposited on the mesoporous TiO₂ surface prior to dye loading process used for fabrication of DSSCs. It was observed that the ALD deposition of ultrathin oxides significantly improved the performance of DSSCs and that the improvement in the DSSC performance depends on the thickness of the deposited HfO₂ and Al₂O₃ films. Compared to a reference DSSC the incorporation of a HfO₂ layer resulted in 69% improvement (from 4.2 to 7.1%) in the efficiency of the cell and incorporation of Al₂O₃ (20 cycles) resulted in 19% improvement (from 4.2 to 5.0%) in the efficiency of the cell. These results suggest that ultrathin metal oxide layers affect the density and the distribution of interface states at the TiO₂/organic dye and TiO₂/liquid electrolyte interfaces and hence can be utilized to treat these interfaces in DSSCs.     

Thin films of In2O3 by atomic layer deposition using In(acac)3

Thin films of indium oxide have been deposited using the atomic layer deposition (ALD) technique using In(acac)₃ (acac = acetylacetonate, pentane-2,4-dione) and either H₂O or O₃ as precursors. Successful growth using In(acac)₃ is contradictory to what has been reported previously in the literature [J.W. Elam, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Chem. Mater. 18 (2006) 3571.]. Investigation of the dependence of temperature on the deposition shows windows where the growth rates are relatively unaffected by temperature in the ranges 165–200 °C for In(acac)₃ and H₂O, 165–225 °C for In(acac)₃ and O₃. The growth rates obtained are of the order 20 pm/cycle for In(acac)₃ and H₂O, 12 pm/cycle for In(acac)₃.     

Characterization of TiO2 thin films prepared by electrolytic deposition for lithium ion battery anodes

The electrolytic deposition of TiO₂ thin films on platinum for lithium batteries is carried out in TiCl₄ alcoholic solution and the films are subsequently annealed. The as-prepared films are amorphous TiO(OH)₂·H₂O, transformed into anatase TiO₂ at 350 °C, and then gradually into rutile TiO₂ at 500 °C. Cyclic voltammograms show oxidation and reduction peaks at 2.20 and 1.61 V, respectively, corresponding to charge and discharge plateaus at 1.98 and 1.75 V vs. Li⁺/Li. The specific capacity decreases with increasing current density for film of 128-nm thickness in the initial discharge. It is observed that the diffusion flux of Li⁺ insertion/extraction into/from TiO₂ controls the reaction rate at higher current densities. Consequently, at low film thickness, high discharge capacity (per weight) is found for the initial cycle at a current density of 10 μA cm^− 2. However, the capacity of prepared films in various thicknesses approach 103 ± 5 mAh g^− 1 after 50 cycles, since the formation of cracks for thicker films offers shorter diffusion paths for Li⁺. In addition, TiO₂ films show electrochromic properties during lithiation and delithiation.     

Effect of SnO2 on the photocatalytical properties of TiO2 films

TiO₂/SnO₂ thin films with different tin atomic percentages were successfully prepared on glass substrates by the spray pyrolysis method from an alcoholic solution of TiO[C₅H₇O₂]₂ with different concentrations of SnCl₄. The TiO₂/SnO₂ thin films prepared at 450 °C presented the anatase phase in polycrystalline configuration from %Sn = 0 in the starting solution up to %Sn = 20, at higher tin content the films present an amorphous configuration. The resulting thin films have a homogeneous surface structure with some porosity. The photocatalytical properties of the films were evaluated with the degradation of methylene blue. The products of the degradation reaction were identified by ¹H nuclear magnetic resonance and the film properties were studied by atomic force microscopy, scanning electron microscopy, UV–Vis spectroscopy, and X-ray diffraction.     

Atomic layer deposition of palladium films on Al2O3 surfaces

We examined the atomic layer deposition (ALD) of Pd films using sequential exposures of Pd(II) hexafluoroacetylacetonate (Pd(hfac)₂) and formalin and discovered that formalin enables the efficient nucleation of Pd ALD on Al₂O₃. In situ quartz crystal microbalance measurements revealed that the Pd nucleation is hampered by the relatively slow reaction of the adsorbed Pd(hfac)₂ species, but is accelerated using larger initial Pd(hfac)₂ and formalin exposures. Pd nucleation proceeds via coalescence of islands and leaves hfac contamination at the Al₂O₃ interface. Pd films were deposited on the thermal oxide of silicon, glass and mesoporous anodic alumina following the ALD of a thin Al₂O₃ seed layer and analyzed using a variety of techniques. We measured a Pd ALD growth rate of 0.2 Å/cycle following a nucleation period of slower growth. The deposited films are cubic Pd with a roughness of 4.2 nm and a resistivity of 11 μΩ cm at 42 nm thickness. Using this method, Pd deposits conformally on the inside of mesoporous anodic alumina membranes with aspect ratio ∼1500 yielding promising hydrogen sensors.     

Hydrophilicity of anatase TiO2/Cr-doped TiO2 thin films with different band gaps

Based on the concept that the electron-hole separation effect caused by a different band-gap structure would improve its hydrophilicity, anatase-TiO₂/Cr-doped TiO₂ thin films were synthesized by DC magnetron sputtering. The optical band gaps of TiO₂ thin films decreased from 3.23 to 2.95 eV with increasing Cr-doping content. Multilayer TiO₂ thin films with different band gaps exhibited a superhydrophilicity under UV illumination. In particular, in anatase TiO₂ (3.23 eV)/4.8% Cr-doped TiO₂ (2.95 eV), the hydrophilicity, which indicated a contact angle of less than 20°, lasted for 48 h in the dark after UV illumination was discontinued. This outstanding result has rarely been reported for TiO₂ thin films, which confirmed that the prominent superhydrophilicity of anatase TiO₂/Cr-doped TiO₂/glass could be attributed to the retardation of electron-hole recombination caused by the band-gap difference.