11通道10位串行A/D转换器TLC1543及其在单片机系统中的应用

介绍一种多通道串行A/D转换器TLC1543的功能特点和工作过程，讨论了器件工作方式的选择，以及器件的工作时序，并给出了TCL1543与89C51的实际应用接口电路及软件清单。     

双口 RAM 在 DSP 处理系统中的应用

本文详细讨论了双口RAM器件在DSP处理系统中的应用，给出了双口RAM器件与不同字长总线系统的通用接口，以及双口RAM器件独特的分区工作方式。     

结势垒控制肖特基整流管的优化设计

本文在分析结势垒控制肖特基整流管工作原理的基础上，详细讨论了器件特性与结构参数的关系；给出了器件优化设计的依据，建立了适用于ＳＰＩＣＥ电路分析程序的器件等效电路模型。     

TLV2544/2548多通道12位串行A/D转换器的原理与应用

介绍了TI公司生产的多通道12位串行A／D转换器TLV2544／2548的功能特点和工作原理，并结合开发实例，详细讨论了器件的工作模式选择及器件的配置，给出了TLV2544与MCS－51系列单片机的应用接口电路和软件程序。     

单电子器件

单电子器件作为新一代器件──量子效应器件中的重要一类，其研究工作已愈来愈被人们重视。本文对这一工作进行了较全面的回顾，同时也讨论了库仑抑制等基本效应，这是此类器件的设计基础。分析了制备单电子器件的关键技术，并简要介绍了器件的潜在应用前景及目前的研制动态。     

硅低温双极晶体管的数值模拟

本文讨论了有关低温双极器件模拟物理的数的低温模型和各种低温物理效应，确立了适用于低温双极器件模拟的数值分析方法，建立了适用于７７－３００Ｋ温度范围内硅双极器件模拟程序，最后模拟分析了一典型结构晶体管的常温和低温时的工作特性。     

光纤延迟线技术的新应用

本文概述了光纤的优点和光纤延迟线的种类，讨论了光纤延迟线作成的器件结构，工作原理，性能，应用和发展。     

铁电液晶空间光调制器氢化非晶硅薄膜p－i－n光敏层的研究

描述了氢化非晶硅／铁电液晶空间光调制器的结构和工作原理，并从器件的电学模型出发，着重讨论了整体器件对光敏层的特性要求，对ａ－Ｓｉ：Ｈ薄膜ｐ－ｉ－ｎ光敏层的制作和光电特性进行了研究     

铁电液晶空间光调制器氢化非晶硅薄膜 p—i—n光敏层的研究

描述了氢化非晶硅／铁电液晶空间光调制器的结构和工作原理，并从器件的电学模型出发，着重讨论了整体器件对光敏层的特性要求，对ａ－Ｓｉ：Ｈ薄膜ｐ－ｉ－ｎ光敏层的制作和光电特性进行了研究。     

采用FPGA技术实现高速数据总线解码器

本文介绍了FPGA器件的内部结构、工作原理，重点讨论了在工作频率较高，对延时要求较严格的情况下，如何利用XACT开发系统实现高速数据总线（HighSpeedDataBus）解码器，并通过方案比较分析，得出采用FPGA器件的优越性。     

The bipolar mode field effect transistor (BMFET) as an opticallycontrolled switch: numerical and experimental results

The use of the optically controlled devices is very attractive in power applications where serious problems can occur when high voltage control is required. In this context, optical switching of electronic devices is instrumental for the electrical insulation between control and power circuits. On this line of argument we have demonstrated the possibility of optically switching a BMFET (bipolar mode field effect transistor) by means of a low power laser diode. After carrying out a detailed theoretical and numerical analysis of the optically controlled BMFET, we have performed different experimental measurements. In particular, by using a BMFET that can block 1300 V and conducts peak drain currents up to 10 A, we have been able to switch an electrical power up to 1 kW by a laser diode of 25 mW operating at 830 nm. This corresponds to a power gain G_P (defined as the ratio between the switched electrical power and the optical power) equal to about to 40000. Both experimental and numerical results have shown that, for optical switching application, the BMFET works much better than an electrically equivalent bipolar junction transistor (BJT)     

Performance analysis of a bipolar mode FET (BMFET) with normallyoff characteristics

The fabrication and characterization of a family of power bipolar-mode junction FETs (BMFETs) are reported. Blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm²) have been obtained. The experimental results are used to get an insight into the physics of BMFET operation and to extract the basic design criteria for these structures. The performance of the BMFET is compared with that of the bipolar transistor, showing it to be superior     

New experimental results of optically activated BMFET switches withdifferent cell design

Optically activated semiconductor devices play a very attractive role in power circuits control applications. In fact, due to the very high galvanic isolation between the control circuit side and the power circuit side, these specific devices can solve the safety problems and eliminate the unintentional switching. In an earlier work, a detailed theoretical and numerical analysis of the BMFET as an optically controlled switch was presented. In this paper, the authors complete the previous analysis by presenting experimental results on the optical switching of various kinds of bipolar mode field effect transistor (BMFET) obtained with a low-power optical source. The BMFETs used are different in design parameters and geometries. The results obtained are in good agreement with the authors' previous theoretical and numerical previsions     

场发射显示器的基板形变分析

采用碳纳米管作为发射源的碳纳米管场致发射显示器是一种新型的平板显示器件。本文由FED基板形变方程出发，用ANSYS软件模拟了阳极基板的厚度对基板形变的影响，得出了厚度和基板形变的关系。在实际制备中采用了新型的基板结构，不仅在显示均匀性方面得到提高，而且降低了成本。     

8000-V 1000-A gate turn-off thyristor with low on-state voltage andlow switching loss

An 8 kV, 1 kA gate turn-off thyristor (GTO) that has been designed with a combination of a p-i-n structure and a ringed-anode short structure is discussed. The GTO has been fabricated using a diffusion and epitaxial buffer process. As a consequence, low on-state voltage and low switching loss have been achieved, solving the two major problems in high-voltage GTOs. The device's structure, the p-i-n base process, and the electrical characteristics of the GTO are described     

石英MEMS陀螺的结构特性分析

介绍了石英微机电系统(MEMS)陀螺的工作原理及敏感芯片的音叉结构特点,采用有限元法分析了敏感芯片的结构特性,并对结构进行优化。利用石英晶体的压电效应,设计了合理的电极布局,并结合敏感芯片结构特点介绍了其微机械加工工艺。通过结构优化和合理的电极布局,提高了石英MEMS陀螺的性能。     

InGaAsP/InP准平面异质结双极晶体管及其与光器件的集成

本文采用计算机辅助分析等方法,讨论了InGaAs/InP异质结双极晶体管(HBT)结构参数与其性能的关系.在此基础上,提出了一种准平面、双集电区HBT,及其相应的制作工艺.初步测试了器件的性能,就其与材料质量的关系作了讨论.文章还提出和制作了一种采用这种HBT为电子器件的光电子集成电路(OEIC).     

压电混凝土结构健康监测系统的开发与应用

基于压电陶瓷传感器的混凝土结构裂缝损伤监测技术已取得了丰硕成果。但该项技术目前还未能广泛用于实际工程,缺乏相应的监测系统开发是其主要原因之一。该文以基于压电陶瓷传感器的波动法主动健康监测技术为理论基础,结合混凝土结构裂缝损伤监测特点,利用虚拟仪器技术开发了一套便携式压电混凝土结构裂缝损伤健康监测系统。通过荷载作用下的混凝土梁的损伤监测试验完成了对系统的测试,并将该系统应用到实际工程中。结果表明,该系统运行稳定可靠,可实时在线地对混凝土结构的不同裂缝损伤状态作出识别,并进行声光预警。     

利用频率选择表面改善微波吸收材料S波段的吸波性能

研究了如何利用金属周期性频率选择表面(FSS)的频率特性来改善微波吸收材料S波段的吸波性能。利用频率选择表面的等效电路和传输线理论分析了FSS和吸波材料涂层双层结构的微波反射特性。采用基于有限元方法的电磁波全波分析软件设计并仿真分析了FSS的结构和尺寸,实际制作了FSS和吸波材料涂层双层结构,测量了微波反射性能。理论分析和实验研究表明,利用FSS可以明显改善吸波材料涂层S波段的吸波性能,展宽涂层的吸波带宽,从而改善吸波材料的低频吸波性能。     

An Integrated Structure for a Virtual Networking Laboratory

A virtual laboratory is a virtual space where students are able to carry out practical activities. This paper presents an integrated structure for a virtual laboratory consisting on nine resources divided into pedagogical, human, and technological factors. Such a structure is based on the experience gained in design and development of virtual laboratories during the past 11 years in a virtual university. The proposed structure has been applied to different virtual laboratories, and this paper presents the special case of a virtual networking laboratory (VNLab) where students can access real networking devices. The VNLab structure described in this paper has been used at the Open University of Catalonia for the Cisco Networking Academic since 2001. Its suitability has been evaluated by the students using a Web questionnaire, and its correctness for the industrial electronics field has been analyzed.