Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers

Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 × 10⁴ s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms.     

Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition

Structural and optical properties of structures with nanoscale InAs islands obtained by submonolayer deposition and embedded in an Al_xGa_1−xAs matrix is investigated. Deposition of several planes of InAs insertions results in formation of arrays of vertically correlated islands. The lateral size of the islands in a column is about 10 nm. Lasing via the ground states of the islands without external optical confinement is demonstrated.     

Synthesis and Fabrication of Multifunctional Nanocomposites: Stable Dispersions of Nanoparticles Tethered with Short,Dense and Polydisperse Polymer Brushes in Poly(methyl methacrylate)

This paper presents a melt‐processable multifunctional nanocomposite material that shows highly controlled tunability in refractive index, glass transition temperature (T_g) and energy bandgap. ZnO quantum dots tethered with polymer brushes are melt‐blended into the matrix polymer, giving rise to multiple functionalities in the nanocomposites. Brush–matrix polymer interactions are important in determining the ability of polymer‐grafted nanoparticles to disperse in a polymer melt, of which graft density (σ), brush (N) and matrix (P) polymer lengths are the critical parameters. It is generally assumed that long polymer brushes (N > P) and an optimum graft density are necessary to achieve a good dispersion. Here it is demonstrated that nanoparticles tethered with short, dense and polydisperse polymer brushes via radical copolymerization can exhibit a stable, fine dispersion in the polymer melt. The quality of the dispersion of the nanoparticles is characterized by measuring physical properties that are sensitive to the state of the dispersion. This synthesis method presents a general approach for the inexpensive and high‐throughput fabrication of high quality, melt‐blendable nanocomposites that incorporate functional nanoparticles, paving the way for wider application of high performance nanocomposites.     

Synthesis and characterization of poly (linoleic acid)-g-poly(methyl methacrylate) graft copolymer with applying in Au/PLiMMA/n-Si diode

Poly (linoleic acid)-g-poly(methyl methacrylate) (PLiMMA) graft copolymer was synthesized and characterized. PLiMMA graft copolymer was synthesized from polymeric linoleic acid peroxide (PLina) possessing peroxide groups in the main chain by free radical polymerization of methyl methacrylate. Later, PLiMMA was characterized by proton nuclear magnetic resonance (¹H NMR), gel permeation chromatography (GPC), thermal gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Furthermore, Au/PLiMMA/n-Si diode was fabricated for the purpose of investigating PLiMMA׳s conformity in diodes. The main electrical characteristics of this diode were investigated using experimental current–voltage (I–V) measurements in dark and at room temperature. Obtained results, such as sufficiently high rectifying ratio of 4.5×10⁴, indicate that PLiMMA is a promising organic material for electronic device applications.     

Capping vertically aligned InGaAs/GaAs(Sb) quantum dots with a AlGaAsSb spacer layer in intermediate‐band solar cell devices

This study demonstrated the feasibility of fabricating a highly stacked vertically aligned InGaAs/GaAs(Sb) quantum dot (QD) structure with an AlGaAsSb spacer layer for improving the device performance of QD intermediate‐band solar cell (QD‐IBSC) devices. The power‐dependent photoluminescence measurements of the proposed structure revealed a blueshift in the QD ground‐state emissions when the excitation power was increased, indicating the formation of an intermediate band inside the QD structure. Capping the InGaAs QDs with a GaAsSb layer prevented the QDs from collapsing because there was less In–Ga intermixing between the QDs and GaAsSb layer. In addition to maintaining the QD structure, the carrier lifetime was extended by tuning the energy band alignment of the InGaAs/GaAsSb QD structure. Inserting the AlGaAsSb layer into the spacer layer increased the band gap, which in turn increased the open‐circuit voltage of the QD‐IBSC. The QD‐IBSC in this work shows an extension of external‐quantum efficiency by up to 1200 nm (compared with a GaAs reference cell) through the absorption by QDs and increased the open‐circuit voltage from 0.67 to 0.70 V by adopting the AlGaAsSb spacer layer. These results confirm that adopting a columnar InGaAs/GaAs(Sb) QD structure with a AlGaAsSb spacer layer can enhance the performance of QD‐IBSC devices. Copyright © 2016 John Wiley & Sons, Ltd.