Highly conductive p + + ‐AlGaAs/n + + ‐GaInP tunnel junctions for ultra‐high concentrator solar cells

Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra‐high concentration applications. We have developed a highly conductive, high bandgap p ^{+ +} ‐AlGaAs/n ^{+ +} ‐GaInP tunnel junction with a peak tunneling current density for as‐grown and thermal annealed devices of 996 A/cm ² and 235 A/cm ², respectively. The J–V characteristics of the tunnel junction after thermal annealing, together with its behavior at MJSCs typical operation temperatures, indicate that this tunnel junction is a suitable candidate for ultra‐high concentrator MJSC designs. The benefits of the optical transparency are also assessed for a lattice‐matched GaInP/GaInAs/Ge triple junction solar cell, yielding a current density increase in the middle cell of 0.506 mA/cm ² with respect to previous designs. Copyright © 2014 John Wiley & Sons, Ltd.     

A validated SPICE network simulation study on improving tunnel diodes by introducing lateral conduction layers

In this work, network simulations using LTSpice (Linear Technology, Milpitas, CA, USA) for monolithic triple‐junction solar cells have been performed. In order to simulate the internal structure correctly, the integration of the tunnel diode into the network simulation was mandatory. The tunnel‐diode characteristics are modeled by LTSpice's arbitrary behavioral current sources. The integration of tunnel‐diode characteristics into the network model was validated by comparison of simulated and experimental data. Lattice‐matched triple‐junction solar cells were examined under homogenous illumination between 1 and 1900 suns as well as under non‐uniform digital irradiance. The verified model was then used to study the influence of lateral current spreading in layers surrounding the tunnel diodes. It is shown that a lateral current spreading from high to low illumination intensity regions cannot prevent the tunnel diode from switching to thermal diffusion under the used Gaussian illumination profile as it appears in concentrator photovoltaic applications. Furthermore, resistance regimes of the lateral conducting layers were identified, which would enable a current spreading that is high enough to transport all current exclusively by tunneling. It is shown that the presence of at least one additional layer above and one below the tunnel diode is mandatory. Finally, the necessary layer thicknesses using Al_x−1Ga_xAs as lateral conducting layers are calculated for different doping concentrations and mole fractions x. Copyright © 2011 John Wiley & Sons, Ltd.     

Temperature dynamics of multijunction concentrator solar cells up to ultra‐high irradiance

We report experimental results for the effect of irradiance (from 12 up to 8600 suns) on the temperature coefficients of the key performance parameters of multijunction concentrator solar cells, with a flash‐like, real‐sun optical system. Particular attention is paid to the time scales and magnitudes of junction heating, hence the degree to which the cell can be deemed isothermal. The implications for corresponding measurements from solar simulators with pulsed artificial light and for the performance evaluation of concentrator photovoltaics are also addressed. Copyright © 2011 John Wiley & Sons, Ltd.     

Current‐matching estimation for multijunction cells within a CPV module by means of component cells

An indoor method is presented for the quantification of the current‐matching ratio of a multijunction cell within a concentrator under arbitrary spectral irradiance conditions. The cell current is measured across a very large spectral sweep to force the relevant subcells into a limiting condition. The light spectrum is monitored using component cells to avoid the need for a spectroradiometer and spectral response measurements. The method also provides an estimation of the current losses beyond the overall current mismatch, for example, losses produced in concentrators with chromatic aberration by the non‐uniformity of the incident spectrum across the cell. The method has been applied to a pair of refractive point‐focus concentrator systems; first, a 300X single‐stage Fresnel lens over a lattice‐matched GaInP/Ga(In)As/Ge triple‐junction cell and second, a 1000X two‐stage system with the same Fresnel lens over a homogenizing secondary lens that encapsulates a triple‐junction cell of the same kind but smaller. The experiment demonstrates that the single‐stage concentrator exhibits a higher sensitivity of the current mismatch to variations in the focal distance. Copyright © 2012 John Wiley & Sons, Ltd.     

Concentrator multijunction solar cell characteristics under variable intensity and temperature

The performance of multijunction solar cells has been measured over a range of temperatures and illumination intensities. Temperature coefficients have been extracted for three‐junction cell designs that are in production and under development. A simple diode model is applied to the three‐junction performance as a means to predict performance under operating conditions outside the test range. These data may be useful in guiding the future optimization of concentrator solar cells and systems. Copyright © 2008 John Wiley & Sons, Ltd.     

Implications of low breakdown voltage of component subcells on external quantum efficiency measurements of multijunction solar cells

The electrical and optical coupling between subcells in a multijunction solar cell affects its external quantum efficiency (EQE) measurement. In this study, we show how a low breakdown voltage of a component subcell impacts the EQE determination of a multijunction solar cell and demands the use of a finely adjusted external voltage bias. The optimum voltage bias for the EQE measurement of a Ge subcell in two different GaInP/GaInAs/Ge triple‐junction solar cells is determined both by sweeping the external voltage bias and by tracing the I–V curve under the same light bias conditions applied during the EQE measurement. It is shown that the I–V curve gives rapid and valuable information about the adequate light and voltage bias needed, and also helps to detect problems associated with non‐ideal I–V curves that might affect the EQE measurement. The results also show that, if a non‐optimum voltage bias is applied, a measurement artifact can result. Only when the problems associated with a non‐ideal I–V curve and/or a low breakdown voltage have been discarded, the measurement artifacts, if any, can be attributed to other effects such as luminescent coupling between subcells. Copyright © 2015 John Wiley & Sons, Ltd.     

Performance comparison of AlGaAs,GaAs and InGaP tunnel junctions for concentrated multijunction solar cells

Four tunnel junction (TJ) designs for multijunction (MJ) solar cells under high concentration are studied to determine the peak tunnelling current and resistance change as a function of the doping concentration. These four TJ designs are: AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs. Time‐dependent and time‐average methods are used to experimentally characterize the entire current–voltage profile of TJ mesa structures. Experimentally calibrated numerical models are used to determine the minimum doping concentration required for each TJ design to operate within a MJ solar cell up to 2000‐suns concentration. The AlGaAs/GaAs TJ design is found to require the least doping concentration to reach a resistance of <10⁻⁴ Ω cm² followed by the GaAs/GaAs TJ and finally the AlGaAs/AlGaAs TJ. The AlGaAs/InGaP TJ is only able to obtain resistances of ≥5 × 10⁻⁴ Ω cm² within the range of doping concentrations studied. Copyright © 2010 John Wiley & Sons, Ltd.     

Full‐wave optoelectrical modeling of optimized flattened light‐scattering substrate for high efficiency thin‐film silicon solar cells

The flattened light‐scattering substrate (FLiSS) is formed by a combination of two materials with a high refractive index mismatch, and it has a flat surface. A specific realization of this concept is a flattened two‐dimensional grating. When applied as a substrate for thin‐film silicon solar cells in the nip configuration, it is capable to reflect light with a high fraction of diffused component. Furthermore, the FLiSS is an ideal substrate for growing high‐quality microcrystalline silicon (µc‐Si:H), used as bottom cell absorber layer in most of multijunction solar cell architectures. FLiSS is a three‐dimensional structure; therefore, a full‐wave analysis of the electromagnetic field is necessary for its optimal implementation. Using finite element method, different shapes, materials, and geometrical parameters were investigated to obtain an optimized FLiSS. The application of the optimized FLiSS in µc‐Si:H single junction nip cell (1‐µm‐thick i‐layer) resulted in a 27.4‐mA/cm² implied photocurrent density. The absorptance of µc‐Si:H absorber exceeded the theoretical Yablonovitch limit for wavelengths larger than 750 nm. Double and triple junction nip solar cells on optimal FLiSS and with thin absorber layers were simulated. Results were in line with state‐of‐the‐art optical performance typical of solar cells with rough interfaces. After the optical optimization, a study of electrical performance was carried out by simulating current–voltage characteristics of nip solar cells on optimized FLiSS. Potential conversion efficiencies of 11.6%, 14.2%, and 16.0% for single, double, and triple junction solar cells with flat interfaces, respectively, were achieved. Copyright © 2012 John Wiley & Sons, Ltd.     

Fabrication and study of p-n structures with crystalline inclusions in the space-charge region

A new model of connecting elements for monolithic multijunction solar cells based on III–V compounds is proposed, in which p-n junctions with crystalline inclusions of a foreign semiconductor material in the space-charge region are used instead of p ⁺⁺-n ⁺⁺ tunnel junctions. The study shows that the introduction of crystalline inclusions to the space-charge region of the p-n junction in a GaSb-based structure allows current densities of ～50 A/cm² at an ohmic loss of ～0.01 Ω cm². The obtained characteristics of the connecting elements with crystalline inclusions show their applicability to multijunction solar cells for concentrated light conversion.     

Multijunction solar cell model for translating I–V characteristics as a function of irradiance,spectrum, and cell temperature

We describe here a lumped diode model for concentrator multijunction solar cells, in which the temperature, irradiance and spectrum dependences are explicitly included. Moreover an experimental method based on it for the prediction of the I‐V curve under any irradiance‐spectrum‐temperature conditions from a single input measurement is proposed and applied to a set of commercial triple‐junction solar cells in order to demonstrate its validity. Component ‘isotype’ cells are used as reference cells for intensity and spectrum, sparing the measurement of light spectrum and cell spectral response. Finally, a mean RMS prediction error of 0.85% over a range of 100X‐25°C to 700X‐75°C is reported for the whole set when the model parameters inherent in the cell are assumed to be the same for every sample. If optimum parameters are extracted for every cell, the RMS error is reduced to 0.53%. Copyright © 2010 John Wiley & Sons, Ltd.     

Concentration photovoltaic optical system irradiance distribution measurements and its effect on multi‐junction solar cells

This paper proposes an indoor procedure based on charge‐coupled device camera measurements to characterize the non‐uniform light patterns produced by optical systems used in concentration photovoltaic (CPV) systems. These irradiance patterns are reproduced on CPV solar cells for their characterization at concentrated irradiances by using a concentrator cell tester and placing high‐resolution masks over the cells. Measured losses based on the masks method are compared with losses in concentrator optical systems measured by using the Helios 3198 solar simulator for CPV modules. Copyright © 2011 John Wiley & Sons, Ltd.     

Designing III–V multijunction solar cells on silicon

Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits. This paper presents ideal limiting efficiencies for tandem and triple junction multijunction solar cells featuring a Si subcell also serving as substrate. Subject to this Si bandgap constraint, we design optimum cell structures that we show depart from the unconstrained ideal. In order to progress to manufacturable designs, the use of III–V materials is considered, using a novel growth method capable of yielding low defect density III–V layers on Si. In order to evaluate the real potential of these proposed multijunction designs, a quantitative model is presented, the strength of which is the joint modelling of external quantum efficiency and current–voltage characteristics using the same parameters. The method yields a single‐parameter fit in terms of the Shockley–Read–Hall lifetime. This model is validated by fitting experimental data of external quantum efficiency, dark current and conversion efficiency of world record tandem and triple junction cells under terrestrial solar spectra without concentration. We apply this quantitative model to the design of tandem and triple junction solar cells, yielding cell designs capable of reaching efficiencies without concentration of 32% for the best tandem cell and 36% for the best triple junction cell. This demonstrates that efficiencies within a few per cent of world records are realistically achievable without the use of concentrating optics, with growth methods being developed for multijunction cells combining III–V and Si materials. Copyright © 2014 John Wiley & Sons, Ltd.     

InGaP/GaAs‐based multijunction solar cells

The conversion efficiency of InGaP/(In)GaAs/Ge ‐based multijunction solar cells has been improved up to 29–30% (AM0) and 31–32% (AM1·5G) by technologies, such as double‐hetero wide band‐gap tunnel junctions, combination with Ge bottom cell with the InGaP first hetero‐growth layer, and precise lattice‐matching to Ge substrate by adding 1% indium to the conventional GaAs lattice‐match structure. Employing a 1·95 eV AlInGaP top cell should improve efficiency further. For space use, radiation resistance has been improved by technologies such as introducing of an electric field in the base layer of the lowest‐resistance middle cell, and EOL current matching of sub‐cells to the highest‐resistance top cell. A grid structure and cell size have been designed for concentrator applications in order to reduce the energy loss due to series resistance, and 38% (AM1·5G, 100–500 suns) efficiency has been demonstrated. Furthermore, thin‐film structure which is InGaP/GaAs dual junction cell on metal film has been newly developed. The thin‐film cell demonstrated high flexibility, lightweight, high efficiency of over 25% (AM0) and high radiation resistance. Copyright © 2005 John Wiley & Sons, Ltd.     

Direct measurement and simulation techniques for analysis of radiation flux on a linear PV concentrator

For a linear reflective photovoltaic concentrator, small regions of low radiation flux can significantly reduce the output current of an entire array. Therefore, understanding the causes of light non‐uniformities along the focal line is crucial in the design of a trough concentrator. Typically, the flux profile is dependent on factors such as the mirror shape accuracy, gaps between mirrors and shading due to receiver supports. Radiation flux profiles have been measured on the combined heat and power solar (CHAPS) collectors developed at the Australian National University (ANU). The results for the first prototype showed significant variation in the radiation flux intensity along the length. The effect of imperfections in the mirror shape has been studied using ray tracing techniques and the software package Opticad. The simulations allowed the individual effects of mirror shape imperfections, gaps between mirrors and shading to be examined. It was found that small variations from the ideal mirror shape could cause large variation in the longitudinal radiation flux profile. Finally, techniques to minimise the drop in performance of a PV concentrator due to flux non‐uniformities are discussed, including use of bypass diodes and choice of solar cells. Copyright © 2006 John Wiley & Sons, Ltd.     

Temperature accelerated life test on commercial concentrator III–V triple‐junction solar cells and reliability analysis as a function of the operating temperature

A temperature accelerated life test on commercial concentrator lattice‐matched GaInP/GaInAs/Ge triple‐junction solar cells has been carried out. The acceleration of the aging has been accomplished by subjecting the solar cells at temperatures markedly higher than the nominal working temperature inside a concentrator, and the nominal photo‐current condition (820 X) has been emulated by injecting current in darkness. Three tests at different temperatures have been carried out. The failure distributions across the three test temperatures have been fitted to an Arrhenius–Weibull model. An Arrhenius activation energy of 1.59 eV was determined from the fit. The reliability functions and parameters of these solar cells at two nominal working conditions (80 and 100 °C) have been obtained. In both cases, the instantaneous failure rate function monotonically increases, that is, the failures are of the wear‐out kind. We have also observed that the reliability data are very sensitive to the nominal temperature condition. In fact, at a nominal working condition of 820 X and 80 °C, assuming that the concentration module works 5 h per day, the warranty time obtained for a failure population of 5% has been 113 years. However, for a nominal working condition of 820 X and 100 °C, the warranty time obtained for a failure population of 5% has been 7 years. Therefore, in order to offer a long‐term warranty, the working temperature could be a key factor in the design of the concentration photovoltaic systems. Copyright © 2014 John Wiley & Sons, Ltd.     

Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction

InAs quantum dots (QDs) have been incorporated to bandgap engineer the (In)GaAs junction of (In)GaAs/Ge double‐junction solar cells and InGaP/(In)GaAs/Ge triple‐junction solar cells on 4‐in. wafers. One sun AM0 current–voltage measurement shows consistent performance across the wafer. Quantum efficiency analysis shows similar aforementioned bandgap performance of baseline and QD solar cells, whereas integrated sub‐band gap current of 10 InAs QD layers shows a gain of 0.20 mA/cm². Comparing QD double‐junction solar cells and QD triple‐junction solar cells to baseline structures shows that the (In)GaAs junction has a V_oc loss of 50 mV and the InGaP 70 mV. Transmission electron microscopy imaging does not reveal defective material and shows a buried QD density of 10¹¹ cm⁻², which is consistent with the density of QDs measured on the surface of a test structure. Although slightly lower in efficiency, the QD solar cells have uniform performance across 4‐in. wafers. Copyright © 2013 John Wiley & Sons, Ltd.     

A simulation‐based method for the comprehensive analysis of effective lifetime from photoconductance

This paper presents a method for estimating recombination parameters in the volume and surface of solar cell precursors throughout the manufacturing process, taking into account several effects that are generally neglected. The technique is based on the comprehensive reconstruction of the effective lifetime assuming a set of fundamental parameters and its comparison to the experimental data obtained from the photoconductance measured under uniform generation in quasi‐steady state conditions. The analysis starts from the semianalytical solution of the minority carrier profiles in the structures under test. This analysis overcomes the usual flat profile approximation and presents important advantages. It allows the asymmetry presented by the solar cell precursors to be taken into account and deals with a wide range of surface conditions: emitters, bare silicon or dielectric passivations. The model also accounts for the effect of the electric field in the volume, and implements several phenomena that are sometimes neglected but are relevant when measuring industrial solar cells precursors: the injection dependence of mobilities and recombination lifetimes, the presence of non‐recombinant traps and the Depletion Region Modulation effect. The estimation technique requires uniform generation, which greatly facilitates the calculation of the carrier profiles and allows for a simple method for the auto calibration of the light absorption. Copyright © 2006 John Wiley & Sons, Ltd.     

Global optimization of solar thermophotovoltaic systems

In this paper, we present a theoretical model based on the detailed balance theory of solar thermophotovoltaic systems comprising multijunction photovoltaic cells, a sunlight concentrator and spectrally selective surfaces. The full system has been defined by means of 2n + 8 variables (being n the number of sub‐cells of the multijunction cell). These variables are as follows: the sunlight concentration factor, the absorber cut‐off energy, the emitter‐to‐absorber area ratio, the emitter cut‐off energy, the band‐gap energy(ies) and voltage(s) of the sub‐cells, the reflectivity of the cells' back‐side reflector, the emitter‐to‐cell and cell‐to‐cell view factors and the emitter‐to‐cell area ratio. We have used this model for carrying out a multi‐variable system optimization by means of a multidimensional direct‐search algorithm. This analysis allows to find the set of system variables whose combined effects results in the maximum overall system efficiency. From this analysis, we have seen that multijunction cells are excellent candidates to enhance the system efficiency and the electrical power density. Particularly, multijunction cells report great benefits for systems with a notable presence of optical losses, which are unavoidable in practical systems. Also, we have seen that the use of spectrally selective absorbers, rather than black‐body absorbers, allows to achieve higher system efficiencies for both lower concentration and lower emitter‐to‐absorber area ratio. Finally, we have seen that sun‐to‐electricity conversion efficiencies above 30% and electrical power densities above 50 W/cm² are achievable for this kind of systems. Copyright © 2012 John Wiley & Sons, Ltd.     

Limiting factors on the semiconductor structure of III–V multijunction solar cells for ultra‐high concentration (1000–5000 suns)

The main limiting factors of multijunction solar cells operating under ultra‐high concentration (>1000 suns) are examined by means of 2D physically based numerical modelling. The validation of the model is carried out by fitting calibrated light concentration measurements. Because the series resistance is the most important constraint in the electrical performance of the solar cell under ultra‐high irradiance, it is analysed and quantified detailing different contributions such as: (i) the electrical properties of the emitter; (ii) window layer of the top cell; and (iii) the band discontinuities formed at heterojunctions. We found the role of window layer to be important at very high concentrations (above 700 suns), while at ultra‐high concentrations, (above 1000 suns) a gain in efficiency (~ 1% absolute) can be obtained by a proper structural design of the window layer. In the case of the heterojunctions included in the multijunction solar cell, the impact of a high‐band offset can be mitigated by increasing the doping level density thus favouring the tunnelling effect. Moreover, the influence of different recombination mechanisms and high‐injection effects at ultra‐high irradiance is discussed. Finally, an optimisation of the complete solar cell taking into account the ohmic contacts to work under ultra‐high irradiances (from 1000 to 5000 suns) is presented as well as the implications on the use of ultra‐high irradiance in different multijunction solar cell architectures. Copyright © 2016 John Wiley & Sons, Ltd.     

High efficiency triple junction thin film silicon solar cells with optimized electrical structure

We report on improving the performance of pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells and corresponding single‐junction solar cells in this paper. Based on wet‐etching sputtered aluminum‐doped zinc oxide (ZnO:Al) substrates with optimized surface morphologies and photo‐electrical material properties, after adjusting individual single‐junction solar cells utilized in triple‐junction solar cells with various optimization techniques, we pay close attention to the optimization of tunnel recombination junctions (TRJs). By means of the optimization of individual a‐Si:H/a‐SiGe:H and a‐SiGe:H/µc‐Si:H double‐junction solar cells, we compensated for the open circuit voltage (V_oc) loss at the a‐Si:H/a‐SiGe:H TRJ by adopting a p‐type µc‐Si:H layer with a low activation energy. By combining the optimized single‐junction solar cells and top/middle, middle/bottom TRJs with little electrical losses, an initial efficiency of 15.06% was achieved for pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells. Copyright © 2014 John Wiley & Sons, Ltd.