Determination of the shear impedance of viscoelastic liquids using cylindrical piezoceramic resonators

In this paper, a new method for determining the rheological parameters of viscoelastic liquids is presented. To this end, we used the perturbation method applied to shear vibrations of cylindrical piezoceramic resonators. The resonator was viscoelastically loaded on the outer cylindrical surface. Due to this loading, the resonant frequency and quality factor of the resonator changed. According to the perturbation method, the change in the complex resonant frequency /spl Delta/~/spl omega/ = /spl Delta/w/sup re/ + j/spl Delta//spl omega//sup im/ is directly proportional to the specific acoustic impedance for cylindrical waves Zc of a viscoelastic liquid surrounding the resonator, i.e., /spl Delta/~w /spl sim/ jZ/sub c/, where j = (-1)/sup 1/2/. Hence, the measurement of the real and imaginary parts of the complex resonant frequency determines the real part, R/sub c/, and imaginary part, X/sub c/, of the complex acoustic impedance for cylindrical waves Z/sub c/ of an investigated liquid. Further-more, the specific impedance Z/sub L/ for plane waves was related to the specific impedance Z/sub c/ for cylindrical waves. Using theoretical formulas established and the results of the experiments performed, the shear storage modulus /spl mu/ and the viscosity /spl eta/ for various liquids (e.g., epoxy resins) were determined. Moreover, the authors derived for cylindrical resonators a formula that relates the shift in resonant frequency to the viscosity of the liquid. This formula is analogous to the Kanazawa-Gordon formula that was derived for planar resonators and Newtonian liquids.     

A displacement sensor for nonmetallic hydraulic cylinders

A sensor was developed to provide signals proportional to the position of the rod in a hydraulic cylinder. The sensor has a coil winding in the shell of the cylinder. The sensor operates by sensing the change in the coil impedance as the rod moves in the cylinder. This paper describes the construction of the cylinder and the sensor, and the performance evaluation of the sensor. Several different materials were placed in the rod and tested. For the cylinder tested, an aluminum core provided the highest precision, about 0.38 /spl Omega/. The full-scale output was 19.90 /spl Omega/ over a stroke length of 193 mm. The linearity was about 1.64% of full-scale. Shielding from electromagnetic interference can improve the precision dramatically. A ferrite-cored rod assembly yielded a much greater full-scale output, 1300 /spl Omega/, but exhibited significant hysteresis.     

Evaluation of the frequency dependence of the resistance and capacitance standards in the BIPM quadrature bridge

The Bureau International des Poids et Mesures (BIPM) has established a measurement chain allowing calibration of capacitance standards in terms of the quantized Hall resistance (QHR). An important element in the chain is a quadrature bridge linking a pair of ac resistors of values 2R/sub K/ /spl ap/ 51.6 k/spl Omega/ to a pair of capacitance standards. The quadrature bridge can be operated at five different frequencies: 513, 1027, 1541, 3082, and 6164 Hz. For such measurements, we use different ratios (1/1, 4/1 and 1/4) for the main inductive voltage divider in the quadrature bridge and three different pairs of capacitors of values 3000, 2000, and 1000 pF. A calculable coaxial resistance of 1290.6 /spl Omega/ (R/sub K//20) is used as a reference to evaluate the frequency dependence of the 51.6-k/spl Omega/ resistances. This allows the calibration of capacitance standards at the five different frequencies. The measured frequency dependences of 10 and 100 pF capacitance standards are reported.     

Electric fields within cells as a function of membrane resistivity--a model study

Externally applied electric fields play an important role in many therapeutic modalities, but the fields they produce inside cells remain largely unknown. This study makes use of a three-dimensional model to determine the electric field that exists in the intracellular domain of a 10-/spl mu/m spherical cell exposed to an applied field of 100 V/cm. The transmembrane potential resulting from the applied field was also determined and its change was compared to those of the intracellular field. The intracellular field increased as the membrane resistance decreased over a wide range of values. The results showed that the intracellular electric field was about 1.1 mV/cm for R/sub m/ of 10 000 /spl Omega//spl middot/cm/sup 2/, increasing to about 111 mV/cm as R/sub m/ decreased to 100 /spl Omega//spl middot/cm/sup 2/. Over this range of R/sub m/ the transmembrane potential was nearly constant. The transmembrane potential declined only as R/sub m/ decreased below 1 /spl Omega//spl middot/cm/sup 2/. The simulation results suggest that intracellular electric field depends on R/sub m/ in its physiologic range, and may not be negligible in understanding some mechanisms of electric field-mediated therapies.     

The /spl plusmn/45/spl deg/ correlation interferometer as a means to measure phase noise of parametric origin

A radiofrequency interferometric detector is combined with the correlation-and-averaging technique in a new scheme for the measurement of the phase noise of a component. The method relies upon the assumption that the phase noise of the component being tested (DUT) exceeds the amplitude noise, which is consistent with the general experience in the field of wireless engineering. The new scheme is based on the amplification of the DUT noise sidebands and on the simultaneous measurement of the amplified noise by means of two mixers driven in quadrature, /spl plusmn/ 45/spl deg/ off the carrier phase. The /spl plusmn/45/spl deg/ detection has two relevant properties, namely 1) the sensitivity is neither limited by the thermal energy k/sub B/T/sub 0/, nor by temperature uniformity, and 2) the noise of the measurement amplifier is rejected, despite a single amplifier being shared by the two channels of the correlator. The article provides the theoretical background and experimental results. The sensitivity of the first 100-MHz prototype, given in terms of the S/sub /spl phi//(f) floor, is some 12 dB below k/sub B/T/P/sub 0/, where P/sub 0/ is the carrier power. Using a dual carrier suppression scheme, the residual flicker is as low as -168 dBrad/sup 2//Hz at f=1 Hz off the carrier.     

Towards accurate measurement of the frequency dependence of capacitance and resistance standards up to 10 MHz

Progress toward an understanding of the frequency dependence of capacitance and resistance standards at frequencies up to 10 MHz is presented. A qualitative comparison is also made for capacitance and dissipation factor measurements between the National Physical Laboratory (NPL) high-frequency four terminal-pair (4TP) bridge and a commercial impedance analyzer for the first time. A set of novel high-frequency calculable coaxial resistance standards, of nominal 100 /spl Omega/ and 1 k/spl Omega/ values, have been developed and their calculated frequency dependence up to 1 MHz is given.     

Handheld-impedance-measurement system with seven-decade capability and potentiostatic function

This paper describes design and test of a new impedance-measurement system for nonlinear devices that exhibits a seven-decade range and works down to a frequency of 0.01 Hz. The system is specifically designed for electrochemical measurements, but the proposed architecture can be employed in many other fields where flexible signal generation and analysis are required. The system employs an unconventional signal generator based on two pulsewidth modulation (PWM) oscillators and an autocalibration system that allows uncertainties of less than 3% to be obtained over a range of 1 k/spl Omega/ to 100 G/spl Omega/. A synchronous demodulation processing allows the noise superimposed to the low-amplitude input signals to be made negligible.     

A field deployable, multiplexed Bragg grating sensor system used in an extensive highway bridge monitoring evaluation tests

A multiplexed optical fiber Bragg grating sensor system with a measurement bandwidth of up to 200 Hz enabling dynamic loading events, e.g., road traffic, to be observed has been designed, installed, and tested over an 18-month period on a 346-m road bridge in Norway, for design verification and structural integrity monitoring purposes. A network of 32 fiber Bragg sensors was surface bonded along with a corresponding set of resistive strain gauges for comparative tests to be made. The wavelength data were calibrated against two thermally stabilized (/spl sim/0.15 pm) reference gratings, which rejected common mode noise and provided absolute wavelength scaling. These data provides independent strain and temperature information. Long-term test results showed good linearity and repeatability of <10 /spl mu//spl epsiv/ over the test period with a precision of /spl plusmn/5 /spl mu//spl epsiv/ and a resolution of /spl plusmn/1 /spl mu//spl epsiv/. The readings from the FBG sensors were comparable to those from the foil gauge sensors to within /spl plusmn/4 /spl mu//spl epsiv/.     

A low-cost interface to high-value resistive sensors varying over a wide range

This paper presents a low-cost interface for high-value resistive sensors varying over a wide range, from k/spl Omega/ to G/spl Omega/. The proposed circuit that acts as a "resistance to period converter" is suitable to be interfaced to a microcontroller or a counting device. The behavior of real electronic components that produce estimation errors, is taken into account. Experimental results obtained by the realized prototype show a good resolution and repeatability.     

Ultrahigh-sensitive tin-oxide microsensors for H/sub 2/S detection

Ultrahigh-sensitivity SnO/sub 2/-CuO sensors were fabricated on Si(100) substrates for detection of low concentrations of hydrogen sulfide. The sensing material was spin coated over platinum electrodes with a thickness of 300 nm applying a sol-gel process. The SnO/sub 2/-based sensors doped with copper oxide were prepared by adding various amounts of Cu(NO/sub 3/)/sub 2/.3H/sub 2/O to a sol suspension. Conductivity measurements of the sensors annealed at different temperatures have been carried out in dry air and in the presence of 100 ppb to 10-ppm H/sub 2/S. The nanocrystalline SnO/sub 2/-CuO thin films showed excellent sensing characteristics upon exposure to low concentrations of H/sub 2/S below 1 ppm. The 5% CuO-doped sensor having an average grain size of 20 nm exhibits a high sensitivity of 2.15/spl times/10/sup 6/ (R/sub a//R/sub g/) for 10-ppm H/sub 2/S at a temperature of 85/spl deg/C. By raising the operating temperature to 170/spl deg/C, a high sensitivity of /spl sim/10/sup 5/ is measured and response and recovery times drop to less than 2 min and 15 s, respectively. Selectivity of the sensing material was studied toward various concentrations of CO, CH/sub 4/, H/sub 2/, and ethanol. SEM, XRD, and TEM analyses were used to investigate surface morphology and crystallinity of SnO/sub 2/ films.     

IGBT-based kilovoltage pulsers for ultrasound measurement applications

Two high-voltage pulser designs are presented that offer advantages in some ultrasound measurement applications, such as driving thick ultrasonic source transducers used for broadband measurements of attenuation or hydrophone frequency response and directivity. The pulsers use integrated gate bipolar transistors (IGBTs) as the switching devices, and in one design an output voltage pulse is produced that has a peak amplitude nearly twice that of the supply voltage. The pulsers are inexpensive and relatively easy to construct. The power supply need only provide the average current to charge the capacitors, as opposed to the much higher peak pulse current. With a 1200 V supply and a pulse repetition frequency of 200 Hz, the nondoubling and doubling pulsers provided peak voltages of greater than 1100 V and 2200 V, respectively, into loads ranging from 50 /spl Omega/ to 500 /spl Omega/. For a 50 /spl Omega/ load, slewing rates of 38 V/ns and 23 V/ns were measured for the nondoubling and doubling pulsers, respectively. For a 500 /spl Omega/ load these values were 56 V/ns and 36 V/ns.     

Demagnetizing factors for rectangular prisms

For rectangular prisms of dimensions 2a/spl times/2b/spl times/2c with constant material susceptibility /spl chi/, we have calculated and tabulated the fluxmetric and magnetometric demagnetizing factors N/sub f/ and N/sub m/, defined along the 2c dimension as functions of c/(ab)/sup 1/2/(=1/spl sim/500), a/b(=1/spl sim/256), and /spl chi/(=0/spl sim/10/sup 9/). We introduce an interpolation technique for obtaining N/sub f,m/ with arbitrary values of c/(ab)/sup 1/2/, a/b, and /spl chi/.     

Recent developments in high curie temperature perovskite single crystals

The temperature behavior of various relaxor-PT piezoelectric single crystals was investigated. Owing to a strongly-curved morphotropic phase boundary, the usage temperature of these perovskite single crystals is limited by T/sub R-T/- the rhombohedral to tetragonal phase transformation temperature - which occurs at the significantly lower temperatures than the Curie temperature T/sub c/. Attempts to modify the temperature usage range of Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PZNT) and Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PMNT) rhombohedral crystals (T/sub c/ /spl sim/ 150-170/spl deg/C, T/sub R-T/ /spl sim/ 60-120/spl deg/C) using minor dopant modifications were limited, with little success. Of significant potential are crystals near the morphotropic phase boundary in the Pb(Yb/sub 1/2/Nb/sub 1/2/)O/sub 3/-PbTiO/sub 3/ (PYNT) system, with a T/sub c/ > 330/spl deg/C, even though T/sub R-T/ was found to be only half the value at /spl sim/160/spl deg/C. Single crystals in the novel BiScO/sub 3/-PbTiO/sub 3/ system offer significantly higher T/sub c/s > 400/spl deg/C, while exhibiting electromechanical coupling coefficients k/sub 33/ > 90% being nearly constant till the T/sub R-T/ temperature around 350/spl deg/C, which greatly increases the temperature range for transducer applications.     

A new low-cost RF built-in self-test measurement for system-on-chip transceivers

This paper presents a new RF built-in self-test (BIST) measurement and a new automatic-performance-compensation network for a system-on-chip (SoC) transceiver. We built a 5-GHz low noise amplifier (LNA) with an on-chip BIST circuit using 0.18-/spl mu/m SiGe technology. The BIST-measurement circuit contains a test amplifier and RF peak detectors. The complete measurement setup contains an LNA with a BIST circuit, an external RF source, RF relays, 50-/spl Omega/ load impedance, and a dc voltmeter. The proposed BIST circuit measures input impedance, gain, noise figure, input return loss, and output signal-to-noise ratio of the LNA. The test technique utilizes the output dc-voltage measurements, and these measured values are translated to the LNA specifications such as the gain through the developed equations. The performance of the LNA was improved by using the new automatic compensation network (ACN) that adjusts the performance of the LNA with the processor in the SoC transceiver.     

Spin-transfer switching current distribution and reduction in magnetic tunneling junction-based structures

Spin transfer switching current distribution within a cell and switching current reduction were studied at room temperature for magnetic tunnel junction-based structures with resistance area product (RA) ranged from 10 to 30 /spl Omega/-/spl mu/m/sup 2/ and TMR of 15%-30%. These were patterned into current perpendicular to plane configured nanopillars having elliptical cross sections of area /spl sim/0.02 /spl mu/m/sup 2/. The width of the critical current distribution (sigma/average of distribution), measured using 30 ms current pulse, was found to be 3% for cells with thermal factor (KuV/k/sub B/T) of 65. An analytical expression for probability density function p(I/I/sub c0/) was derived considering a thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical current distribution. Spin-transfer switching current reduction was investigated through enhancing effective spin polarization factor /spl eta//sub eff/ in magnetic tunnel junction-based dual spin filter (DSF) structures. The intrinsic switching current density (J/sub c0/) was estimated by extrapolating experimental data of critical current density (J/sub c/) versus pulse width (/spl tau/), to a pulse width of 1 ns. A reduction in intrinsic switching current density for a dual spin filter (DSF: Ta/PtMn/CoFe/Ru/CoFeB/Al2O3/CoFeB/spacer/CoFe/PtMn/Ta) was observed compared to single magnetic tunnel junctions (MTJ: Ta/PtMn/CoFe/Ru/CoFeB/Al2O3/CoFeB/Ta). J/sub c/ at /spl tau/ of 1 ns (/spl sim/J/sub c0/) for the MTJ and DSF samples were 7/spl times/10/sup 6/ and 2.2/spl times/10/sup 6/ A/cm/sup 2/, respectively, for identical free layers. Thus, a significant enhancement of the spin transfer switching efficiency is seen for DSF structure compared to the single MTJ case.     

A CMOS focal-plane motion sensor with BJT-based retinal smoothing network and modified correlation-based algorithm

This work presents and implements a CMOS real-time focal-plane motion sensor intended to detect the global motion, using the bipolar junction transistor (BJT)-based retinal smoothing network and the modified correlation-based algorithm. In the proposed design, the BJT-based retinal photoreceptor and smoothing network are adopted to acquire images and enhance the contrast of an image while the modified correlation-based algorithm is used in signal processing to determine the velocity and direction of the incident image. The deviations of the calculated velocity and direction for different image patterns are greatly reduced by averaging the correlated output over 16 frame-sampling periods. The proposed motion sensor includes a 32/spl times/32 pixel array with a pixel size of 100/spl times/100 /spl mu/m/sup 2/. The fill factor is 11.6% and the total chip area is 4200/spl times/4000 /spl mu/m/sup 2/. The DC power consumption is 120 mW at 5 V in the dark. Experimental results have successfully confirmed that the proposed motion sensor can work with different incident images and detect a velocity between 1 pixel/s and 140,000 pixels/s via controlling the frame-sampling period. The minimum detectable displacement in a frame-sampling period is 5 /spl mu/m. Consequently, the proposed high-performance new motion sensor can be applied to many real-time motion detection systems.     

A low-noise latching comparator probe for waveform sampling applications

A new latching comparator probe is described. The probe is being developed as part of an effort to augment voltage measurement capability in the 10 Hz to 1 MHz frequency range. The probe offers an input voltage range of /spl plusmn/10 V, input impedance of 1 M/spl Omega/ and root mean square noise referred to the input as low as 55 /spl mu/V. The probe's 3-dB bandwidth is approximately 20 MHz. Total harmonic distortion is as low as -93 dB at 50 kHz. Gain flatness is within /spl plusmn/10 /spl mu/V/V from 100 Hz to 100 kHz. Improved step settling performance is achieved using a technique that minimizes circuit thermal errors. The probe's input range can be extended with a frequency-compensated 1-M/spl Omega/ input impedance attenuator allowing measurement of pulses in the microsecond regime up to 100 V. The attenuator can be compensated further with a digital filtering algorithm to achieve gain accuracy better than 100 /spl mu/V/V.     

New multifrequency method for the determination of the dissipation factor of capacitors and of the time constant of resistors

A new method for the simultaneous determination of the dissipation factor of capacitors and of the time constant of resistors by a multifrequency method is presented. This method is based on the measurement of impedance ratios at two or more frequencies. A bridge is set up with a programmable two-channel ac voltage source and the impedances to be compared. The impedance ratios are determined by synchronous sampling procedures and application of discrete Fourier transform. In a first experiment, a high-grade gas-filled 1 nF standard capacitor was compared with a stable 1 M/spl Omega/ ac resistor at frequencies between 31 Hz and 666 Hz. The estimated standard uncertainties (k=1) are 0.6/spl middot/10/sup -6/ for the dissipation factor of the capacitor and 0.4 ns for the time constant of the ac resistor.     

Fabrication and characterization of nano-sized SrTiO/sub 3/-based oxygen sensor for near room-temperature operation

Nano-sized SrTiO/sub 3/-based oxygen sensors were fabricated from synthesized SrTiO/sub 3/ and commercial SrTiO/sub 3/ using the high-energy ball milling and the thick-film screen-printing techniques. The particle sizes, microstructural properties, oxygen-sensing properties, and humidity effects of the synthesized nano-sized SrTiO/sub 3/-based oxygen sensors were characterized using X-ray diffraction (XRD), transmission electron microscope, scanning electron microscope (SEM), and gas sensing measurements. Experimental results showed that the particle size of the powders was milled down to be around 27 nm. The effect of different annealing temperatures (400/spl deg/C, 500/spl deg/C, 600/spl deg/C, 700/spl deg/C, and 800/spl deg/C) on the gas sensing properties of the synthesized SrTiO/sub 3/ sensor from nitrogen to 20% oxygen was characterized. The commercial SrTiO/sub 3/ devices annealed at 400/spl deg/C, both with 0-h and 120-h milling time, were used for comparison. The optimal relative resistance (R/sub nitrogen//R/sub 20%oxygen/) value of 6.35 is obtained for the synthesized SrTiO/sub 3/ sample annealed at 400/spl deg/C and operating at 40/spl deg/C. This operating temperature is much lower than that of conventional metal oxide semiconducting oxygen gas sensors (300/spl deg/C-500/spl deg/C) and SrTiO/sub 3/ oxygen gas sensors (>700/spl deg/C). The response and recovery times are 1.6 and 5 min, respectively. The detected range is 1-20% oxygen. The impedance of the synthesized SrTiO/sub 3/ sensor with annealing at 400/spl deg/C and operating at 40/spl deg/C (from 1 mHz to 10 MHz) in 20% oxygen ambient was found to be independent of the relative humidity (dry, 20% RH, 80% RH, near 100% RH).