快速热处理对BaSrTiO3薄膜微结构的影响

采用射频溅射法在Si基片上制备BaSrTiO3(BST)薄膜,利用X射线衍射和原子力显微镜(AFM)研究了快速热处理温度和时间对BaSrTiO3薄膜微结构的影响.结果表明:BST薄膜的衍射峰强度和结晶度随退火温度的升高而提高.随退火温度的升高,BST薄膜的表面粗糙度经历先降低后增大的过程,而BST薄膜的晶粒尺寸单调减小.当退火温度为700℃时,随退火时间的增加,BST薄膜的晶粒尺寸几乎不发生变化,而表面粗糙度单调减小.     

玻片基板温度对磷掺杂真空蒸镀多晶硅薄膜的影响

为进一步提高多晶硅薄膜的晶化率,采用真空蒸镀法结合金属铝诱导退火处理在玻璃衬底上制备了掺杂磷的多晶硅薄膜。采用扫描电镜、激光拉曼光谱仪等研究了基板温度对磷掺杂多晶硅薄膜的组织、形貌、晶粒尺寸及晶化率的影响。结果表明:随基板温度升高,薄膜的晶粒大小和晶化率呈先增大后减小的趋势,基板温度为150℃时,晶粒尺寸显著增大,达0.45μm左右,且具有较高的结晶度,薄膜晶化率可高达94.95%。     

钛酸锶钡(BST)薄膜晶化过程研究

采用射频磁控溅RF-magnetron sputting)法制备了钛酸锶钡(BST)薄膜,用快速热处理(RTA)和常缮规热处理(CFA)对薄膜进行晶化.利用AFM、XRD等技术分析了钛酸锶钡薄膜的晶化过程,以及不同退火温度和退火方法下薄膜的晶粒、晶相特性.实验表明:钛酸锶钡薄膜在500℃开始结晶,到700℃左右时结晶比较完善,晶化过程中没有出现择优取向;从表面形貌和X射线衍射图综合分析,快速退火的晶化效果要优于常规退火.     

磁控共溅射Al-Cu-Fe薄膜表面形貌分析EI

利用磁控共溅射方法采用不同的溅射工艺在单晶硅基片沉积制备了Al-Cu-Fe薄膜.运用原子力显微镜镜(AFM)分析了Al-Cu-Fe薄膜的表面形貌、表面粗糙度和晶粒尺寸.结果表明:随着溅射气压的减小,薄膜表面粗糙度和晶粒尺寸均有所减小.当基底温度升高至450℃时,Al-Cu-Fe薄膜的粗糙度和晶粒尺寸明显增加.溅射时间的延长导致了薄膜的表面粗糙度下降和晶粒尺寸的长大.增加溅射功率会使薄膜表面粗糙度有所增加.     

磁控共溅射Al-Cu-Fe薄膜表面形貌分析

利用磁控共溅射方法采用不同的溅射工艺在单晶硅基片沉积制备了Al-Cu-Fe薄膜.运用原子力显微镜镜(AFM)分析了Al-Cu-Fe薄膜的表面形貌、表面粗糙度和晶粒尺寸.结果表明:随着溅射气压的减小,薄膜表面粗糙度和晶粒尺寸均有所减小.当基底温度升高至450℃时,Al-Cu-Fe薄膜的粗糙度和晶粒尺寸明显增加.溅射时间的延长导致了薄膜的表面粗糙度下降和晶粒尺寸的长大.增加溅射功率会使薄膜表面粗糙度有所增加.     

退火温度对Si基Bi4Ti3O12铁电薄膜微观结构影响研究

采用Sol-Gel工艺制备了Si基Bi4Ti3O12铁电薄膜。研究了退火温度对Si基Bi4Ti3O12薄膜晶相结构、晶粒尺寸及薄膜表面形貌的影响。研究表明，退火温度低于450℃时Bi4Ti3O12薄膜为非晶状态，退火温度在550-850℃范围内均为多晶薄膜，而且随退火温度升高，Bi4Ti3O12薄膜更趋向于沿c轴取向的生长；而晶粒尺寸及薄膜粗糙度随退火温度升高而增大，但在较高温度下增长速度趋缓。     

组分梯度（Ba,Sr）TiO3薄膜的制备工艺研究

采用改进的溶胶．凝胶（sol-gel）法在si衬底上制备了组分梯度Ba1-xSrxTiO3（x=0，0．1，0．2，0．3，0．4）（简称BST）薄膜。探讨了不同退火温度对组分梯度BST薄膜晶化的影响，应用X射线衍射（XRD）及原子力显微镜（AFM）分析了薄膜的微观结构。结果表明组分梯度薄膜的最佳制备工艺为600℃预烧5min，700℃退火1．5h，此时薄膜具有完整的钙钛矿相，薄膜表面平整、无裂纹、无孔洞。比较了单组分和组分梯度BST薄膜的微观结构。XRD测试结果显示，组分梯度BST薄膜的衍射峰峰位介于底层和硕层单组分BST薄膜之间，且衍射峰明显宽化；AFM测试结果表明，组分梯度BST薄膜的晶粒明显大于单组分BST薄膜，表面均方根粗糙度（RMS）也大于单组分BST薄膜，这可能是由于组分梯度薄膜较高的预烧温度促进晶粒生长造成的。     

热蒸发制备CdSe薄膜的退火工艺研究

采用真空热蒸发技术在光学玻璃基底上制备了CdSe薄膜,研究了真空下不同退火温度和退火时间对CdSe薄膜晶体结构和表面形貌的影响。XRD结果表明,在400~500℃范围下退火2h、5h的CdSe薄膜晶型不发生改变,结晶性随退火温度升高而增强,其晶粒尺寸从32nm增加至50nm。SEM结果表明,在450℃下退火2h后的CdSe薄膜表面颗粒分布均匀且排列规则、无裂纹。AFM结果表明,在450℃下退火2h后的CdSe薄膜致密性好,表面粗糙度低(5.19nm)。因此采用真空热蒸发制备的CdSe薄膜的热处理条件确定为:退火温度450℃,退火时间2h。     

退火工艺对溶胶凝胶Pb(Zr0.52Ti0.48)O3薄膜残余应力的影响

使用溶胶凝胶法制备了Pb(Zr0.52Ti0.48)O3 铁电薄膜,分别利用原子力显微镜、X射线衍射及面探扫描技术分析了薄膜的组织结构,并运用掠入射X射线衍射法研究了不同工艺条件下制备的薄膜的残余应力.研究表明溶胶凝胶薄膜在600℃退火30min后完全晶化,组织结构均匀.不同工艺下制备的薄膜均受残余拉应力,随着退火温度及退火时间的延长,薄膜中的残余应力逐渐增大,而随着薄膜厚度的增加,残余应力先增大然后减小.     

磁控溅射制备Al-Cu-Fe薄膜不同溅射时间的生长行为

采用磁控溅射法在硅基材上制备了Al-Cu-Fe薄膜,采用原子力显微镜(AFM)和X射线衍射仪(XRD)研究了不同溅射时间下Al-Cu-Fe薄膜的生长行为。结果表明,随着溅射时间的延长,Al-Cu-Fe薄膜的β晶相的衍射峰半峰宽逐渐减小,而λ晶相的衍射峰半峰宽则逐渐增大。Al-Cu-Fe薄膜的生长依次经历了小岛形核阶段、小岛结合阶段、连续薄膜阶段、晶粒长大阶段等4个阶段。另外,随着溅射时间的延长,Al-Cu-Fe薄膜的粗糙度呈现出先增大后减小的趋势。     

BST/BZT/BST多层薄膜结构与性能研究

利用脉冲激光沉积法在LaNiO3/LaAlO3(001)基片上生长了Ba0.6Sr0.4TiO3(BST)和Ba(Zr0.2Ti0.8)O3(BZT)单层薄膜,以及Ba(Zr0.2Ti0.8)O3/Ba0.6Sr0.4TiO3/Ba(Zr0.2Ti0.8)O3(BZT/BST/BZT)多层薄膜.X射线衍射(XRD)分析发现,BST、BZT和LNO薄膜都具有高度的(00l)取向.原子力显微镜(AFM)显示三种样品表面光滑无裂纹,晶粒尺寸和表面粗糙度相当.电容测试表明,相对BST、BZT单层薄膜,多层薄膜具有最大的品质因数42.07.表明多层薄膜在微波应用中具有很大的潜力.     

溅射工艺对BST薄膜取向行为的影响

采用射频磁控溅射法在Si(100)衬底上沉积了Ba0.65Sr0.35TiO3薄膜.借助XRD、AFM和SEM研究了衬底温度、退火温度、溅射气压等不同的溅射参数对Ba0.65Sr0.35TiO3薄膜的晶化行为和显微结构的影响.在室温下沉积并未经退火处理的Ba0.65Sr0.35TiO3 薄膜是无定形态,在较高温度下沉积的薄膜晶化相对较好;随着在氧气气氛中退火温度的升高,X射线衍射峰的半峰宽变窄,衍射峰强度增强;在0.37～1.2Pa气压下沉积的Ba0.65Sr0.35TiO3薄膜有(110)和(200)主衍射峰,且其强度随溅射气压的增加而增强;当溅射气压继续升到3.9Pa,(110)和(200)衍射峰明显增强,说明Ba0.65Sr0.35TiO3 薄膜具有(110) (200)择优取向.AFM和SEM结果显示薄膜晶粒细小均匀、结构致密、表面平整,且无裂纹、无孔洞.分析结果显示优化工艺参数制备的Ba0.65Sr0.35TiO3 薄膜是用以制备非致冷红外探测器的优质材料.     

退火温度对NiZn铁氧体薄膜性能的影响

采用射频磁控溅射法在Si(100)基片上制备了NiZn铁氧体薄膜,研究了退火温度对薄膜性能的影响.采用XRD分析仪分析了薄膜的相结构,原子力显微镜分析了薄膜的表面形貌,振动样品磁强计测量了薄膜的磁性能,结果表明,随着退火温度的升高,薄膜的结晶状态越好,晶粒尺寸越大,饱和磁感应强度越高,面内矫顽力越小.     

Influence of deposition parameters on preferred orientation of RF magnetron sputtered BST thin films

Ba_0.65Sr_0.35TiO₃ (BST) thin films have been deposited by radio frequency magnetron sputtering. The effects of the deposition parameters on the crystallization and microstructure of BST thin films were investigated by X-ray diffraction and field emission scanning electron microscopy, respectively. The crystallization behavior of these films was apparently affected by the substrate temperature, annealing temperature and sputtering pressure. The as-deposited thin films at room temperature were amorphous. However, the improved crystallization is observed for BST thin films deposited at higher temperature. As the annealing temperature increased, the dominant X-ray diffraction peaks became sharper and more intense. The dominant diffraction peaks increased with the sputtering pressures increasing as the films deposited at 0.37–1.2 Pa. With increasing the sputtering pressure up to 3.9 Pa, BST thin films had the (110) + (200) preferred orientation. Possible correlations of the crystallization with changes in the sputtering pressure were discussed. The SEM morphologies indicated the film was small grains, smooth, and the interface between the film and the substrate was sharp and clear.     

Two critical grain sizes of Ba0.6Sr0.4TiO3 thin films

Ba_0.6Sr_0.4TiO₃ (short for BST) thin films were prepared by RF magnetron sputtering. By adjusting annealing conditions, the BST thin films with different grain sizes were obtained. The microstructures of BST thin films were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and high-resolution transmission electron microscopy (HRTEM). It is found that there are two critical sizes in BST thin films in relation to grain sizes. The crystalline critical size from amorphous to crystalline is about 10 nm. The ferroelectric critical size from cubic (paraelectric) to tetragonal (ferroelectric) is about 20 nm.     

氢等离子体加热法晶化a-Si:H薄膜

利用氢等离子体加热晶化n^ -a-Si：H／a-Si：H薄膜．可以在450℃的衬底温度下制备多晶硅薄膜。采用X射线衍射谱、Raman散射谱和扫描电子显微镜等手段进行表征和分析,研究了不同退火条件对薄膜晶化的影响。结果表明。随着射频氢等离子功率的提高、衬底温度升高和退火时间的增加,薄膜的晶化度呈现出增加趋势。     

Heat treatment effects on the formation of lanthanum-modified lead zirconate titanate thin films

The microstructural and compositional properties of lanthanum-modified lead zirconate titanate (PLZT) thin films deposited on platinum coated Si substrates by RF magnetron sputtering have been studied. The heat treatment processes of substrate heating during deposition and post deposition furnace and rapid thermal annealing were compared as processes for obtaining the desired pervoskite phase. PLZT thin films deposited with in-situ substrate heating showed little evidence of micro-cracking. The XRD data obtained showed the formation of pervoskite phase at 550 °C and indicated the suppression of the pyrochlore phase for increasing temperatures. The RBS analysis revealed a film thickness of 140 nm and composition of (Pb_0.91La_0.09)(Zr_0.6Ti_0.4)O₃. Deposition performed with in-situ substrate heating at 650 °C resulted in highly (110) pervoskite orientated thin films with an average grain size around 160 to 200 nm and an RMS roughness of 3 nm.     

Studies on phase transformation and molecular orientation in nanostructured zinc phthalocyanine thin films annealed at different temperatures

Studies on the electronic and optical properties of thin films of organometallic compounds such as phthalocyanine are very important for the development of devices based on these compounds. The nucleation and grain growth mechanism play an important role for the final electronic as well as optoelectronic properties of the organic and organometallic thin films. The present article deals with the change in the film morphology, grain orientation of nanocrystallites and optical properties of zinc phthalocyanines (ZnPc) thin films as a function of the post deposition annealing temperature. The effect of annealing temperature on the optical and structural property of vacuum evaporated ZnPc thin films deposited at room temperature (30 °C) on quartz glass and Si(100) substrates has been investigated. The thin films have been characterized by the UV-vis optical absorption spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy. From the studies of UV-vis absorption spectra and XRD data, a metastable α to β-phase transformation has been observed when the thin films were annealed at a temperature greater than about 250 °C. The FESEM images have shown the particlelike structure at room temperature and the structure became rodlike when the films were annealed at high temperatures. TEM image of ZnPc film dissolved in ethanol has shown spectacular rod-shaped crystallites. High resolution transmission electron microscopy image of a single nanorod has shown beautiful “honey-comb” like structure. Particle size and root mean square roughness were calculated from AFM images. The changes in band gap energy with increase in annealing temperature have been evaluated.     

退火处理对MgO薄膜性能的影响

采用磁控溅射法在石英衬底上制备了MgO薄膜并分别在不同温度下进行退火处理。利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)研究了MgO薄膜的结构和表面形貌随退火温度的变化,发现退火可以改善薄膜的结晶质量,即随着退火温度的升高,晶粒尺寸逐渐增大,结晶性能更佳,表面更加平整。此外,通过紫外-可见光分光光度计研究了MgO薄膜光学特性的变化,发现随着薄膜退火温度的升高,可见光透射率下降,光学带隙值逐渐减小。     

Low-temperature Al-induced crystallization of hydrogenated amorphous Si1−xGex (0.2 ≤ x ≤ 1) thin films

Low-temperature Al-induced crystallization of hydrogenated amorphous silicon-germanium thin films has been investigated by X-ray diffraction, Raman spectra and scanning electron microscopy measurements. It was shown that the Al-induced layer exchange significantly promotes the crystallization of the films. The influence of the annealing temperature and the Ge fraction on X-ray diffraction patterns and Raman spectra was analyzed. The increase in Raman peak intensity was observed with the increase of the annealing temperature, and the high-frequency shifts of Ge-Ge and Si-Ge peaks were found with the increase of the Ge fraction. There is an enhancement in film crystallinity and grain size with the increase of the Ge fraction and annealing temperature.