Studies of structural and electrical properties of Pb(Li1/4Eu1/4Mo1/2)O3 ceramics

Polycrystalline sample of Pb(Li_1/4Eu_1/4Mo_1/2)O₃ was prepared by usual ceramic route. X-ray diffraction, SEM and EDAX were used to check the formation, homogeneity and elements present in the compound. The measurement of dielectric constant (ɛ), dielectric loss (tanδ), hysteresis loop parameters (e.g. spontaneous polarization) as function of frequency and temperature suggest that the compound is a ferroelectric one and has a ferro-paraelectric phase transition at 112 ± 2°C. The measurement of dc resistivity both as function of biasing electric field and temperature of the compound suggests that the compound has negative temperature coefficient (NTC) of resistance above 100°C.     

Synthesis,structure and characterization of ceramic Ca4Bi2Ti4Nb6O30

The polycrystalline samples of Ca₄Bi₂Ti₄Nb₆O₃₀ (herein designated CBTN) were synthesized by the conventional ceramic method. Preliminary X-ray structural study of the compound showed the formation of a single phase solid solution having orthorhombic structure in the paraelectric phase. Measurements of the dielectric constant (ε) and dielectric loss (tan δ) as a function of temperature (−180–200°C) at 1 kHz and 10 kHz and also as a function of frequency (10² Hz to 10⁴ Hz) at five different temperatures [−180°C, −40°C, − 10°C 26°C (room temperature) and 75°C] have shown a dielectric anomaly and a phase transition at − 13 ±1°C in CBTN.     

Structure and microwave dielectric properties of Ba3Ti4−x (Fe1/2Nb1/2) x Nb4O21 solid solutions

Ba₃Ti_4−x (Fe_1/2Nb_1/2) _x Nb₄O₂₁ (0 ≤ x ≤ 4) ceramics with the substitution of (Fe_1/2Nb_1/2) for Ti were investigated. The modified Ba₃Ti₄Nb₄O₂₁ dielectric ceramics prepared via the solid state reaction route exhibited single hexagonal structure. The dielectric constant and the quality factor of Ba₃Ti_4−x (Fe_1/2Nb_1/2) _x Nb₄O₂₁ (0 ≤ x ≤ 4) ceramics decreased with an increase of x. Improved temperature coefficient of the resonant frequency of samples was obtained by the substitution of (Fe_1/2Nb_1/2) for Ti. Optimal microwave dielectric properties of ε _r = 50, Q × f = 5200 GHz, and τ _f = 10 ppm/°C in Ba₃Ti₂(Fe_1/2Nb_1/2)₂Nb₄O₂₁ were obtained, which indicated its potential for microwave application.     

Dielectric relaxation in complex perovskite Ba(Bi1/2Ta1/2)O3

A new lead-free perovskite Ba(Bi_1/2Ta_1/2)O₃ was prepared by conventional ceramic fabrication technique at 1,200 °C/4 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. The crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm3m. EDAX and SEM studies were carried out in order to evaluate the quality and purity of the compound. Permittivity data showed a low temperature coefficient of capacitance (T _CC  < 4%) up to +125 °C. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type. Electric modulus studies supported the hopping type of conduction in Ba(Bi_1/2Ta_1/2)O₃.     

Compound-LiCo<Subscript>3/5</Subscript>Fe<Subscript>1/5</Subscript>Mn<Subscript>1/5</Subscript>VO<Subscript>4</Subscript> and dielectric characteristics

The LiCo_3/5Fe_1/5Mn_1/5VO₄ compound was successfully synthesized by solution-based chemical method. The variation of dielectric constant (ε_r) with frequency at different temperatures shows a dispersive behavior at low frequencies. Temperature dependence of ε_r at different frequencies indicates dielectric anomalies in ε_r at temperature (T_max) = 220, 235, 245, 260 and 275 °C with (ε_r)_max ~ 6,830, 2,312, 1,224, 649 and 305 for 10, 50, 100, 200 and 500 kHz, respectively. The variation of tangent loss with frequency at different temperatures shows the presence of dielectric relaxation in the material. The variation of relaxation time as a function of temperature follows the Vogel-Fulcher relation.     

Influence of BaZrO3, MnCO3 additives on dielectric properties and microstructure of Ba(Zn1/3Nb2/3)O3 ceramics and Ba(Zn1/3Nb2/3)O3-Sr(Zn1/3Nb2/3)O3 solid solutions

The effect of BaZrO₃, MnCO₃ additives on the dielectric properties, sintering temperature and microstructure of Ba(Zn_1/3Nb_2/3)O₃ (BZN) and Ba(Zn_1/3Nb_2/3)O₃-Sr(Zn_1/3Nb_2/3)O₃ (BSZN) ceramics was studied in this paper. It indicates that both BaZrO₃ and MnCO₃ can lower the sintering temperature of the ceramics and accelerate the crystallization of BZN and BSZN. The dielectric constant ɛ _r increases after MnCO₃ added, but decreases when BaZrO₃ added alone. The existence of MnCO₃ can modulate the temperature coefficient of capacitance τ _c toward positive, while BaZrO₃, can make c more negative. MnCO₃ and BaZrO₃ can restrain the appearance of the second phase; while BaZrO₃, can prevent the appearance of the superstructure. In the BSZN system, when 1 mass % MnCO₃ added, sintering temperature(t _s ) is lowered to 1240°C. In this study, the best sample that has the excellent properties is sample 5 with dielectric properties of ɛ _r = 43.6, τ _c = −8 × 10⁻⁶ °C⁻¹ and tan δ = 0.6 × 10⁻⁴ (1 MHz). The sintering temperature of BZN and BSZN system can be lowered to less than 1300°C.     

Dielectric properties of Pb[(1?x)(Zr1/2Ti1/2)?x(Zn1/3Ta2/3)]O3 ceramics prepared by columbite and wolframite methods

Polycrystalline samples of Pb[(1 − x)(Zr_1/2Ti_1/2) − x(Zn_1/3Ta_2/3)]O ₃ , where x = 0.1–0.5 were prepared by the columbite and wolframite methods. The crystal structure, microstructure, and dielectric properties of the sintered ceramics were investigated as a function of composition via X-ray diffraction (XRD), scanning electron microscopy (SEM), and dielectric spectroscopy. The results indicated that the presence of Pb(Zn_1/3Ta_2/3)O₃ (PZnTa) in the solid solution decreased the structural stability of overall perovskite phase. A transition from tetragonal to pseudo-cubic symmetry was observed as the PZnTa content increased and a co-existence of tetragonal and pseudo-cubic phases was observed at a composition close to x = 0.1. Examination of the dielectric spectra indicated that PZT–PZnTa exhibited an extremely high relative permittivity at the MPB composition. The permittivity showed a ferroelectric to paraelectric phase transition at 330 °C with a maximum value of 19,600 at 100 Hz at the MPB composition.     

Study of the structural and dielectric properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> and PbO addition on BiNbO<Subscript>4</Subscript> ceramic matrix for RF applications

In this paper, the structural and dielectric properties of BNO (BiNbO₄) was investigated as a function of the external RF frequency and temperature. The BNO Ceramics, prepared by the conventional mixed oxide method and doped with 3, 5 and 10 wt. % Bi₂O₃–PbO were sintered at 1,025 °C for 3 h. The X-ray diffraction patterns of the samples sintered, shown the presence of the triclinic phase (β-BNO). In the measurements obtained at room temperature (25 °C) was observed that the largest values of dielectric permittivity (ε′ _r ) at frequency 100 kHz, were for the samples: BNO5Bi (5 wt. % Bi₂O₃) and BNO5Pb (5 wt. % PbO) with values ε′ _r ~ 59.54 and ε′ _r ~ 78.44, respectively. The smaller values of loss tangent (tan δ) were for the samples: BNO5Bi and BNO3Pb (3 wt. % PbO) with values tan δ ~ 5.71 × 10⁻⁴ and tan δ ~ 2.19 × 10⁻⁴, respectively at frequency 33.69 MHz. The analysis as a function of temperature of the dielectric properties of the samples, obtained at frequency 100 kHz, showed that the larger value of the relative dielectric permittivity was about ε′ _r ~ 76.4 at temperature 200 °C for BNO5Pb sample, and the value smaller observed of dielectric loss was for BNO3Bi sample at temperature 80 °C, with about tan δ ~ 5.4 × 10⁻³. The Temperature Coefficient of Capacitance (TCC) values at 1 MHz frequency, present a change of the signal from BNO (−55.06 ppm/°C) to the sample doped of Bi: BNO3Bi (+86.74 ppm/°C) and to the sample doped of Pb: BNO3Pb (+208.87 ppm/°C). One can conclude that starting from the BNO one can increase the doping level of Bi or Pb and find a concentration where one have TCC = 0 ppm/°C, which is important for temperature stable materials applications like high frequency capacitors. The activation energy (H) obtained in the process is approximately 0.55 eV for BNO sample and increase with the doping level. These samples will be studied seeking the development ceramic capacitors for applications in radio frequency devices.     

Dielectric, ferroelectric and piezoelectric properties of (1 − x)[Pb0.91La0.09(Zr0.60Ti0.40)O3]–x[Pb(Mg1/3Nb2/3)O3], 0 ≤ x ≤ 1

The dielectric, ferroelectric, and piezoelectric properties of ceramic materials of compositions (1 − x)[Pb_0.91La_0.09(Zr_0.60Ti_0.40)O₃]–x[Pb(Mg_1/3Nb_2/3)O₃], x = (0, 0.2, 0.4, 0.6, 0.8, and 1.0) were studied. The above compositions were prepared by mixing the individual Pb_0.91La_0.09(Zr_0.60Ti_0.40)O₃ (PLZT) and Pb(Mg_1/3Nb_2/3)O₃ (PMN) powders in order to design materials with different combination of piezo and dielectric properties. The powders were calcined at 850 °C for 4 h. The presence of various phases in the calcined powders was characterized by X-ray diffraction (XRD) technique. The compacts were prepared by uniaxial pressing and were sintered at 1250 °C for 2 h. The sintered compacts were electroded, poled at 2 kV/mm dc voltage and their dielectric, ferroelectric, and piezoelectric properties were measured. In general, it was observed that the dielectric constant, loss factor and the slimness of the ferroelectric curves increase with the PMN content while the remnant polarization, saturation polarization, and the coercive fields were decreased. It is now possible to design materials with a wide combination of d ₃₃, K, and loss factor by varying PLZT and PMN ratio.     

Dielectric properties of Bi4(GeO4)3 and Bi4(SiO4)3

Dielectric constant, dielectric loss and conductivity of Bi₄(GeO₄)₃ and Bi₄(SiO₄)₃ single crystals have been measured as a function of frequency and in the temperature range from liquid nitrogen temperature to 400° C. The values of the static dielectric constant at room temperature are 16·4 and 13·7 for Bi₄(GeO₄)₃ and Bi₄(SiO₄)₃ respectively. The plots of log (σ) against reciprocal temperature at different frequencies of these crystals merge into a straight line beyond 250°C and the activation energies calculated in this region are found to be 0·95 eV and 1·2 eV for Bi₄(GeO₄)₃ and Bi₄(SiO₄)₃ respectively.     

Influence of sintering temperature on piezoelectric properties of (K0.4425Na0.52Li0.0375)(Nb0.8925Sb0.07Ta0.0375)O3 lead-free piezoelectric ceramics

Microstructure characteristics, phase transition, and electrical properties of (K_0.4425Na_0.52Li_0.0375) (Nb_0.8925Sb_0.07Ta_0.0375)O₃ (KNLNST) lead-free piezoelectric ceramics prepared by normal sintering were investigated with an emphasis on the influence of sintering temperature. The microstructure and piezoelectric, ferroelectric, and dielectric properties were investigated, with a special emphasis on the influence of sintering temperature from 1,100 to 1,140 °C. Orthorhombic phases mainly exist in the ceramics sintered at 1,100–1,130 °C, whereas the tetragonal phase becomes dominant when sintering temperature is above 1,130 °C. Because of the existence of MPB-like transitional behavior, the piezoelectric coefficient (d ₃₃), electromechanical coupling coefficient (kp), and dielectric constant (ε) show peak values of 304pC/N, 0.48, and 1,909, respectively, which are obtained in the sample sintered at 1,120 °C, and its Curie temperature (T _C) is about 271 °C.     

Low-firing Li<Subscript>2</Subscript>ZnTi<Subscript>3</Subscript>O<Subscript>8</Subscript> microwave dielectric ceramics with BaCu(B<Subscript>2</Subscript>O<Subscript>5</Subscript>) additive

Phase purity, microstructure, sinterability and microwave dielectric properties of BaCu(B₂O₅)-added Li₂ZnTi₃O₈ ceramics and their cofireability with Ag electrode were investigated. A small amount of BaCu (B₂O₅) can effectively reduce the sintering temperature from 1075°C to 925°C, and it does not induce much degradation of the microwave dielectric properties. Microwave dielectric properties of ε _r = 23·1, Q × f = 22,732 GHz and τ _f = − 17·6 ppm/°C were obtained for Li₂ZnTi₃O₈ ceramic with 1·5 wt% BaCu(B₂O₅) sintered at 925°C for 4 h. The Li₂ZnTi₃O₈ +BCB ceramics can be compatible with Ag electrode, which makes it a promising microwave dielectric material for low-temperature co-fired ceramic technology application.     

Dielectric, elastic, anelastic and conductivity behaviour of ferroelectromagnetic composites, Ni0·5Zn0·5Fe1·95O4?δ + Ba0·8Pb0·2TiO3

Ferroelectromagnetic composites with compositions, X Ni_0·5Zn_0·5Fe_1·95O_4−δ + (1 − X) Ba_0·8Pb_0·2TiO₃, in which X varies as 0, 0·005, 0·010, 0·015, 0·020, 0·040, 0·060, 0·080 and 1 in mole %, were prepared by conventional ceramic double sintering process. The presence of two phases was confirmed by X-ray diffraction. The temperature variation of dielectric constant, ɛ′, dielectric loss, tan δ, d.c. conductivity, a.c. conductivity, elastic and anelastic behaviour of ferrite-ferroelectric composites were studied in the temperature range 30–350°C. The a.c. conductivity measurements on these composites in the frequency range 100 Hz-1 MHz at room temperature reveal that the conduction mechanism is due to small polaron hopping. The dielectric and elastic data were discussed in the light of phase transitions.     

Ferroelectric and dielectric properties of Bi4-xNdxTi3O12 thin films prepared by sol–gel method

Bi_4-xNd_xTi₃O₁₂ (BNT-x, x = 0, 0.25, 0.50, 0.75 and 1.0) thin films were prepared on Pt/Ti/SiO₂/Si substrates by a sol–gel method. The microstructure, ferroelectric and dielectric properties of BNT-x thin films were investigated. The single-phase BNT-x thin films were obtained. With increasing Nd content, the preferred orientation changed from random to (117) and surface morphologies changed from the mixture of rod- and plate-like grains to rod-like grains. The Nd substitution improved the ferroelectric and dielectric properties of BTO films. BNT-x films showed better electrical properties at x = 0.50—1.0. BNT-0.75 film exhibited the best electrical properties with remanent polarization (2P _r) of 26.6 μC/cm², dielectric constant (ε _r) of 366 (at 1 MHz), dielectric loss (tanδ) of 0.034 (at 1 MHz), leakage current density (J) of ±3.0 × 10⁻⁶ A/cm² (at ± 5 V) and fatigue-free characteristics.     

Effects of Gd doping on the sintering and microwave dielectric properties of BiNbO<Subscript>4</Subscript> ceramics

Gd³⁺ was chosen as a substitute for Bi³⁺ in BiNbO₄ ceramics, and the substitution effects on the sintering performance and microwave dielectric properties were studied in this paper. The high temperature triclinic phase was observed only in the Bi_0.98Gd_0.02NbO₄ ceramics when sintered at 920 °C. Both bulk densities and dielectric constant (ε_r) increased with the sintering temperature, while decreased with the Gd content. The quality factor (Q) exhibited a correlation to the Gd content and the microstructures of Bi_1−x Gd _x NbO₄ ceramics. At the sintering temperature of 900 °C, Bi_0.992Gd_0.008NbO₄ ceramics exhibited microwave dielectric properties of ε_r ∼ 43.87, Q × f ∼ 16,852 GHz (at 4.3 GHz), and its temperature coefficient of resonant frequency (τ_f) was found to be near-to-zero.     

Influence of Ca0.8Sr0.2TiO3 on the microstructures and microwave dielectric properties of Nd(Mg0.4Zn0.1Sn0.5)O3 ceramics

The influence of Ca_0.8Sr_0.2TiO₃ on the microstructures and microwave dielectric properties of Nd(Mg_0.4Zn_0.1Sn_0.5)O₃ ceramics were investigated by the conventional solid-state method. The X-ray diffraction peaks of (1 − x)Nd(Mg_0.4Zn_0.1Sn_0.5)O₃–xCa_0.8Sr_0.2TiO₃ ceramic system shifted to higher angles as x increased. The dielectric constant increased from 31.8 to 47.7, the quality factor (Q × f) decreased from 54,200 to 42,800 GHz, and the temperature coefficient of resonant frequency (τ _f ) increased from −43 to +41 ppm/°C as x increased from 0.5 to 0.7 when (1 − x)Nd(Mg_0.4Zn_0.1Sn_0.5)O₃–xCa_0.8Sr_0.2TiO₃ ceramic system sintered at 1,600 °C for 4 h.     

Preparation of Pb(Zr,Ti)O<Subscript>3</Subscript>–Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> piezoelectric ceramics by dry–dry method

Ternary perovskite ceramics of Pb[(Zr_0.5Ti_0.5)_0.8−x (Mg_1/3Nb_2/3)_0.2+x]_0.98Nb_0.02O_3.01 (PZTMN, x = −0.075, −0.05, −0.025, 0, 0.025, 0.05, and 0.075 ), are synthesized via dry–dry method. B-site precursors of PZTMN ([(Zr_0.5Ti_0.5)_0.8−x (Mg_1/3Nb_2/3)_0.2+x ]_0.98Nb_0.02O_2.01, ZTMN) can be synthesized via a two-step solid state reaction method. The first calcination temperature is 1,300 °C, and the second is not higher than 1,360 °C. Incorporation of magnesium and niobium ions promotes the formation of the single phase solid solution with ZrTiO₄ structure. Single phase perovskite PZTMN is formed at 780 °C, much lower than that in conventional process. Dense ceramics can be sintered at about 1,260 °C with dielectric and piezoelectric properties comparable to that of wet–dry method and higher than that of conventional method. It seems that B-site precursor method is cost effective in preparation of ternary piezoelectric ceramics.     

Structural and electrical properties of Ba(Sb<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)O<Subscript>3</Subscript> ceramic

Lead-free perovskite Ba(Sb_1/2Nb_1/2)O₃ was prepared by conventional ceramic fabrication technique at 1200 °C/5 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software whereas crystallite size and lattice strain were estimated from Williamson–Hall approach. XRD analysis of the compound indicated the formation of a single-phase monoclinic structure with the space group P2/m. EDAX and SEM studies were carried out to evaluate the quality and purity of the compound. Dielectric study revealed the frequency-dependent dielectric anomaly. To find a correlation between the response of the real system and idealized model circuit composed of discrete electrical components, the model fittings were presented using the impedance data. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in Ba(Sb_1/2Nb_1/2)O₃. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy of the compound.     

Dielectric properties of B<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Sm(Co<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript> ceramics at microwave frequency

The microwave dielectric properties and the microstructures of Sm(Co_1/2Ti_1/2)O₃ ceramics with B₂O₃ additions (0.25 and 0.5 wt%) prepared by conventional solid-state route have been investigated. The prepared Sm(Co_1/2Ti_1/2)O₃ exhibited a mixture of Co and Ti showing 1:1 order in the B-site. Doping with B₂O₃ (up to 0.5 wt%) can effectively promote the densification of Sm(Co_1/2Ti_1/2)O₃ ceramics with low sintering temperature. It is found that Sm(Co_1/2Ti_1/2)O₃ ceramics can be sintered at 1,260 °C due to the grain boundary phase effect of B₂O₃ addition. At 1,290 °C, Sm(Co_1/2Ti_1/2)O₃ ceramics with 0.5 wt% B₂O₃ addition possess a dielectric constant (ε _r) of 27.7, a Q × f value of 33,600 (at 9 GHz) and a temperature coefficient of resonant frequency (τ_f) of −11.4 ppm/ °C. The B₂O₃-doped Sm(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices requiring low sintering temperature.     

Dielectric properties of K2Zn2(SO4)3 and (NH4)2 Mg2(SO4)3

Dielectric constant (ɛ), dielectric loss (tan δ) and conductivity (σ) for K₂Zn₂(SO₄)₃ and (NH₄)₂ Mg₂(SO₄)₃ have been measured over the frequency range 100 Hz — 100 kHz and in temperature range 30°C — 400°C. The values of static dielectric constant at room temperature are 7.67 and 4.80 for K₂Zn₂(SO₄)₃ and (NH₄)₂ Mg₂(SO₄)₃ respectively. The plots of log σ against reciprocal temperature at different frequencies of these samples merge into a straight line beyond 250°C and the activation energies calculated in this region are found to be 0.67 eV and 1.98 eV for K₂Zn₂(SO₄)₃ and (NH₄)₂ Mg₂(SO₄)₃ respectively.