新型的形状记忆合金／硅薄膜微驱动器

介绍了一种用硅微加工技术制作的ＮｉＴｉ／Ｓｉ 薄膜结构的双向微驱动器。它利用ＮｉＴｉ 形状记忆合金薄膜（ＳＭＡ） 大的相变回复应力和Ｓｉ 衬底膜的反偏置力产生有一定位移量的双向运动。对ＮｉＴｉ 薄膜进行合理的图形化后使得驱动器位移量增大,双向效应显著,响应速度提高。同时图形化后的ＮｉＴｉ 膜也是加热电阻,使驱动结构简单,所需功率减少。驱动器实际驱动面积为３ ×３ｍ ｍ２ 厚度为２０μｍ 。可产生的最大位移为５０μｍ ,最高驱动频率可达１００Ｈｚ。驱动功率可减小到２００ｍ Ｗ。经过１０００ 万次振动后,驱动膜无开裂,性能正常。它已被成功的应用于压缩型微泵,该泵最大流量达３４０μＬ／ｍｉｎ 。     

形状记忆合金薄膜驱动微泵的动态特性

一种用形状记忆合金薄膜驱动的新型微泵已经研制成功。为了进一步提高微泵性能，研究了微泵在不同驱动条件下的动态特性。结果表明，随着驱动电流和频率的增加，驱动膜有一个最大的位移植。占空比对最大位移的影响在有无流体情况下是不同的。微泵的流量不仅仅由驱动膜的位移决定，它还与驱动频率有关。在给定的频率下，位移越大，输出流量也越大。动态驱动过程中NiTi电阻的变化表明，形状记忆合金薄膜的马氏体←→奥氏体相转变是不完全的。     

电磁驱动柔性振动膜无阀微泵

提出了一种新型微泵设计方案和制作工艺，将电磁驱动器与大振幅振动膜相结合，得到流量大、易于控制的新型微泵。该微泵结构简单，由硅橡胶(聚二甲基硅氧烷PDMS橡胶)振动膜和无阀泵泵体组成，将硅加工工艺和非硅加工工艺(电镀)相结合。采用电镀和硅橡胶加工方法将振动膜直接制作在一个硅片上；用电镀和体硅加工工艺将驱动线圈和无阀泵泵体制作在另一块硅片上，然后将两个硅片键合在一起。对该微泵的性能特点正进行着更深入的研究。     

硅基PZT压电驱动微开关的设计和优化

采用压电多层微悬臂梁理论分析模型，研究了一种新型PZT压电复合多层膜微悬臂梁驱动微开关的机械性能，提出了一种新的硅基PZT压电复合多层薄膜微悬臂梁驱动微开关的制作方法。利用有限元分析软件ANSYS7.O对微悬臂梁结构进行了模态分析，探讨了结构参数与微悬臂梁运动特性的关系及影响压电薄膜微开关性能的因素，进一步模拟了0．3V工作电压下微开关的位移。结果表明，经优化后的压电薄膜微开关可进一步应用到集成化芯片系统中。     

PZT压电薄膜无阀微泵的制备工艺及实验研究

介绍了一种基于PZT薄膜的无阀压电微泵。该微泵利用聚二甲基硅氧烷(PDMS)作为泵膜,自制的压电圆型薄膜片作为驱动部件,采用收缩管/扩张管结构,压电圆型致动片和PDMS泵膜的组合可产生较大的泵腔体积改变。在对微泵制备工艺研究的基础上,对其性能进行了实验研究,结果表明:电压和频率对流速均有显著影响。在7.5 V1、80 Hz的正弦电压驱动下,该压电微泵的最大输出流速为2.05μL/min。该文制作的微泵具有流量稳定,驱动电压较低,性能稳定可靠和易控制等优点,可满足微流体系统的使用要求。     

用于微型传感器的薄膜研究

本文介绍了微机械薄膜和各向异性腐蚀的理论和特点,对Ｓｉ３Ｎ４平膜和纹膜着重进行了理论分析,叙述了微型薄膜的设计方法和试验结果。     

一种硅基集成微晃动马达

本文介绍一种硅基集成微晃动马达．该微马达的制作工艺非常简单，主要包括四次光刻（共三块版）、两次ＬＰＣＶＤ多晶硅膜淀积和两次ＬＴＯＳｉＯ２膜淀积．微马达转子和定子由厚度为４．２μｍ的多晶硅膜形成，转子与定子之间的空气间隙为２．０—２．５μｍ，转子的半径为４０—５０μｍ．初步测量结果表明，微晃动马达的最低驱动电压为４９Ｖ，最高转速估计可达６００ｒｐｍ。     

用离子束辅助淀积多层薄膜技术合成Co—Si化合物薄膜的研究

本文通过离子束辅助淀积与真空淀积多层膜技术相结合，淀积合成Ｃｏ－Ｓｉ薄膜，ＲＢＳ和ＸＲＤ分析表明：在无离子束轰击条件下利用电子束蒸镀Ｃｏ／Ｓｉ多层膜，得到的是由ａ－Ｃｏ与非晶Ｓｉ组成的薄膜，薄膜与Ｓｉ（１１１）基底及多层膜各层之间没有明显的相互扩散，而用复合方法镀制的薄膜与Ｓｉ基底以及各层之间都产生了混合和扩散，并已有Ｃｏ２Ｓｉ，ＣｏＳｉ相生成，７５０℃退火３０分钟后，无轰击样品只在硅基底与薄膜界     

常规XRD对超薄PtSi/Si膜的表征技术的研究

由于超薄金属半导体薄膜在微电子领域具有广泛应用前景，因而对它的研究也越来越深入。针对超薄铂硅膜的超薄性和半导体基底给表征分析带来的困难，通过实验，用常规 Ｘ Ｒ Ｄ， Ｘ Ｐ Ｓ 研究了单晶硅基片上生长超薄铂硅膜表征技术，测出厚度约为３ ｎｍ 的铂硅膜的物相成分为 Ｐｔ Ｓｉ， Ｐｔ２ Ｓｉ。     

用离子束辅助淀积多层薄膜技术合成Co－Si化合物薄膜的研究

本文通过离子束辅助淀积（ＩＢＡＤ）与真空淀积多层膜技术相结合，淀积合成Ｃｏ－Ｓｉ薄膜，ＲＢＳ和ＸＲＤ分析表明：在无离子束轰击条件下利用电子束蒸镀Ｃｏ／Ｓｉ多层膜，得到的是由α－Ｃｏ与非晶Ｓｉ组成的薄膜．薄膜与Ｓｉ（１１１）基底及多层膜各层之间没有明显的相互扩散，而用复合方法镀制的薄膜与Ｓｉ基底以及各层之间都产生了混合和扩散，并已有ＣＯ２Ｓｉ、ＣｏＳｉ相生成．７５０℃退火３０分钟后，无轰击样品只在硅基底与薄膜界面处产生明显的反应和扩散，而复合方法该制的样品则形成均匀的ＣｏＳｉ２薄膜。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.