Growth of vertically aligned ZnO nanorods using textured ZnO films

A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells.

PACS

61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)     

CdS quantum dots sensitized ZnO spheres via ZnS overlayer to improve efficiency for quantum dots sensitized solar cells

This paper reports the preparation of three-dimensional ZnO spheres by using a hydrothermal method and their application to quantum dots sensitized solar cells (QDSSCs). After achieving the desired thickness of sensitized CdS quantum dots (QDs) for ZnO spheres, ZnS overlayer was deposited on the surface of CdS/ZnO photo-anodes to further improve the photoelectric properties. CdS QDs and ZnS overlayer were deposited by successive ionic layer adsorption and reaction (SILAR) method. The surface morphology and crystal structure of the samples were verified by field-emission scanning electron microscopy (FE-SEM), Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The CdS QDs sensitized solar cells were ameliorated via using ZnS as a protection-layer between quantum dots and electrolyte. As a result, the power conversion efficiency (η) has been increased from 0.60 to 1.43% after being treated by ZnS overlayer for CdS/ZnO photo-anodes.     

Facile solution growth of vertically aligned ZnO nanorods sensitized with aqueous CdS and CdSe quantum dots for photovoltaic applications

Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate. CdS and CdSe colloidal quantum dots are assembled onto ZnO nanorods array using water-soluble nanocrystals capped as-synthesized with a short-chain bifuncional linker thioglycolic acid. The solar cells co-sensitized with both CdS and CdSe quantum dots demonstrate superior efficiency compared with the cells using only one type of quantum dots. A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55. The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.     

Effect of CdSe quantum dots on the performance of hybrid solar cells based on ZnO nanorod arrays

This paper reports the fabrication and interface modification of hybrid inverted solar cells based on ZnO nanorod arrays and poly (3-hexylthiophene). CdSe quantum dots (QDs) are grafted to the ZnO nanorod array successfully by bifunctional molecule mercaptopropionic acid to enhance the device performance. The power conversion efficiency of the device is increased by 109% from 0.11% to 0.23% under simulated 1 sun AM 1.5 solar illumination at 100 mW/cm² after the modification. The grafting of CdSe QDs effectively enhanced the excition generation and dissociation on the organic/inorganic interface. This work may provide a general method for increasing the efficiency of organic–inorganic hybrid solar cells by interface modification.     

Photosensitization of TiO2 nanorods with CdS quantum dots for photovoltaic devices

CdS quantum dots (QDs) coated TiO₂ nanorod arrays have been prepared via a two-step method. TiO₂ nanorod arrays were synthesized by a facile hydrothermal method, and CdS QDs were deposited on the nanorods by a sequential chemical bath deposition (S-CBD) technique. The surface morphology, structure, optical and photoelectrochemical behaviors of the core-shell nanorod array films are considered. A photocurrent of 2.5 mA/cm², an open circuit photovoltage of 1.10 V, and a conversion efficiency of 1.91% were obtained under an illumination of 100 mW/cm², when the CdS QDs deposited on TiO₂ nanorods film for about 7 cycles. The results demonstrate that the composite films are of excellence with respect to photovoltaic conversion.     

Growth of three-dimensional ZnO nanorods by electrochemical method for quantum dots-sensitized solar cells

There-dimensional (3D) superstructure was expected to fabricate high performance photoelectrodes of quantum dot-sensitized solar cells (QDSCs). In this paper, the ZnO 3D superstructure with multi-layer structure (3D ZnO nanorods) was grown on ITO glass by a novel electrochemical method at low temperature (60–90 °C). The 3D ZnO nanorods were composed of close-packed ZnO nanorod bundles with wide dimension distribution ranging from hundreds of nanometers to several micrometers. The effects of some important parameters, such as concentration of Zn(NO₃)₂, deposition temperature and concentration of ZnO nanoparticles (served as growth seeds for ZnO nanorods), on the morphology of 3D ZnO nanorods were also studied by scanning electron microscopy. Once being applied in QDSCs, the 3D ZnO nanorods showed more superior photoelectrochemical performance to ZnO nanorod array. The conversion efficiency of 1.42% achieved by the QDSC based on 3D ZnO nanorods was a very promising value for the QDSCs based on ZnO electrodes.     

Concentration dependence of physical properties of low temperature processed ZnO quantum dots thin films on polyethylene terephthalate as potential electron transport material for perovskite solar cell

Colloidal Zinc oxide quantum dots (ZnO QDs) prepared with varying concentrations through precipitation method were deposited on flexible ITO/PET substrates using spin-coating technique. Various characterization tools were utilized to investigate the morphological, structural, electrical and optical properties of the films. The crystallinity of the films was found to improve with increasing ZnO QD concentration (ZQ_C) as evident from the X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies. Crystallographic and optical parameters were evaluated and explained in depth. The average nanograin size and bandgap were increased and decreased respectively, from ～5 nm to ～8 nm and 3.29 eV–3.24 eV with an increase in ZQ_C from 10 mg/mL to 70 mg/mL. Columnar structure growth of the films is revealed by AFM results. The films showed decent optical transparency up to 81%. All the ZnO films exhibited n-type semiconducting property as indicated by the electrical measurements with carrier mobility and low resistivity of 12.21–26.63 cm²/Vs and 11.84 × 10^?3 to 13.16 × 10^?3 Ω cm respectively. Based on the experimental findings, ZnO QD nanostructure film grown at 50 mg/mL is envisaged to be a potential candidate for flexible perovskite photovoltaic application.     

Solid-state thermal dewetted silver nanoparticles onto electrochemically grown self-standing vertically aligned ZnO nanorods for three-dimensional plasmonic nanostructures

Three dimensional (3D) plasmonic nanostructures composed of silver nanoparticles decorated ZnO NRs arrays, have been fabricated by a process combining the electrochemical growth of ZnO NRs and further formation of Ag nanoparticles by the solid-state thermal dewetting (SSD) process. The effect of SSD parameters on the morphological, structural and optical properties of the Ag NPs decorated ZnO NRs arrays has been investigated. It is possible to tune the bandgap of the Ag NPs@ZnO nanorods array 3D plasmonic nanostructure by tailoring the Ag nanoparticle sizes, allowing light manipulation at the nanoscale. The silver nanoparticles attached to the ZnO NRs arrays experienced surface plasmonic coupling effect, causing enhancement in the room temperature photoluminescence (PL) UV emission and quenching the corresponding visible light one. An enhancement in the near band edge emission PL intensity of ZnO to the deep level emission PL intensity ratio after Ag NPs decoration of the ZnO nanostructures corresponding to ca. 11 folds has been observed, indicating that the defect emission is obviously suppressed.     

Electrodeposition of ZnO nanoflake-based photoanode sensitized by carbon quantum dots for photoelectrochemical water oxidation

We report a promising simple strategy for improving the performance of the photoanode for photoelectrochemical (PEC) water oxidation. Three-dimentional hierarchical ZnO nanoflake arrays with abundant porosity and small thickness on fluorine-doped tin oxide glass substrate (FTO) was prepared with electrodeposition. The ZnO nanoflake-based photoanode exhibits superior photoresponse and PEC capability. Furthermore, the ZnO photoanode sensitized by carbon quantum dots (CQDs) can further PEC performance due to the narrower bandgap of CQDs and the improved efficiency of photogenerated electrons transfer from CQDs to ZnO nanostructures. The morphology and properties of the sample were examined by scanning electron microscopy (SEM), cross-section SEM, UV–vis spectra, X-ray photoelectron spectra (XPS), FT-IR, X-ray diffractometry (XRD) and electrical measurements.     

Direct synthesis of vertically aligned ZnO nanowires on FTO substrates using a CVD method and the improvement of photovoltaic performance

In this work, we report a direct synthesis of vertically aligned ZnO nanowires on fluorine-doped tin oxide-coated substrates using the chemical vapor deposition (CVD) method. ZnO nanowires with a length of more than 30 μm were synthesized, and dye-sensitized solar cells (DSSCs) based on the as-grown nanowires were fabricated, which showed improvement of the device performance compared to those fabricated using transferred ZnO nanowires. Dependence of the cell performance on nanowire length and annealing temperature was also examined. This synthesis method provided a straightforward, one-step CVD process to grow relatively long ZnO nanowires and avoided subsequent nanowire transfer process, which simplified DSSC fabrication and improved cell performance.     

Improving Si solar cell performance using Mn:ZnSe quantum dot-doped PLMA thin film

Poly(lauryl methacrylate) (PLMA) thin film doped with Mn:ZnSe quantum dots (QDs) was spin-deposited on the front surface of Si solar cell for enhancing the solar cell efficiency via photoluminescence (PL) conversion. Significant solar cell efficiency enhancements (approximately 5% to 10%) under all-solar-spectrum (AM0) condition were observed after QD-doped PLMA coatings. Furthermore, the real contribution of the PL conversion was precisely assessed by investigating the photovoltaic responses of the QD-doped PLMA to monochromatic and AM0 light sources as functions of QD concentration, combined with reflectance and external quantum efficiency measurements. At a QD concentration of 1.6 mg/ml for example, among the efficiency enhancement of 5.96%, about 1.04% was due to the PL conversion, and the rest came from antireflection. Our work indicates that for the practical use of PL conversion in solar cell performance improvement, cautions are to be taken, as the achieved efficiency enhancement might not be wholly due to the PL conversion.     

Improving the efficiency of ITO/nc-TiO2/CdS/P3HT:PCBM/PEDOT:PSS/Ag inverted solar cells by sensitizing TiO2 nanocrystalline film with chemical bath-deposited CdS quantum dots

An improvement in the power conversion efficiency (PCE) of the inverted organic solar cell (ITO/nc-TiO₂/P3HT:PCBM/PEDOT:PSS/Ag) is realized by depositing CdS quantum dots (QDs) on a nanocrystalline TiO₂ (nc-TiO₂) film as a light absorption material and an electron-selective material. The CdS QDs were deposited via a chemical bath deposition (CBD) method. Our results show that the best PCE of 3.37% for the ITO/nc-TiO₂/CdS/P3HT:PCBM/PEDOT:PSS/Ag cell is about 1.13 times that (2.98%) of the cell without CdS QDs (i.e., ITO/nc-TiO₂/P3HT:PCBM/PEDOT:PSS/Ag). The improved PCE can be mainly attributed to the increased light absorption and the reduced recombination of charge carriers from the TiO₂ to the P3HT:PCBM film due to the introduced CdS QDs.     

Structure, optical and electrical properties of ZnO thin films on the flexible substrate by cathodic vacuum arc technology with different arc currents

ZnO thin ?lms were successfully deposited onto PET substrates prepared by using cathodic arc plasma deposition (CAPD) technique at a low temperature (<75 °C). Their structure, optical and electrical properties were investigated with various arc currents (40, 45, 50 and 55 A). ZnO (0 0 2) peak was clearly observed, and increased as the arc current increased from 40 A to 55 A. The calculated average crystallized sizes were around 15.9-17.7 nm. The films have an average transmittance over 85% in the visible region, and calculated values of the band gap around 3.33-3.31 eV with increase of the arc current. It was also found that a slight blue shift of optical transmission spectra was observable when decreasing the arc current. The deposited ZnO films had the lowest resistivity; about 3 × 10⁻³ Ω cm for the ZnO ?lm with the arc current of 40 A.