脉冲激光沉积技术制备IrO2薄膜的研究

利用脉冲激光沉积(PLD)技术,在Si(100)衬底上制得了导电氧化铱(IrO2)薄膜.讨论了沉积参数(O2分压、衬底温度)对IrO2薄膜的结构、表面形貌和导电性的影响.结果表明20 Pa为最佳O2分压、400℃～500℃为适宜的沉积温度,此条件下制得的IrO2薄膜结晶完整,组织均匀、形状一致,排列致密,其最低电阻率约为42μΩ·cm.     

退火时间对射频溅射p型透明SnO_2/Al/SnO_2导电薄膜结构、形貌、光学和电学性能的影响(英文)

采用SnO2和Al靶,通过射频(RF)溅射在石英基体上制备透明p型SnO2/Al/SnO2导电复合薄膜。沉积薄膜在500°C进行不同时间(1~8 h)退火处理,研究退火时间对SnO2/Al/SnO2复合薄膜结构、形貌、光学和电学性能的影响。X射线衍射结果表明:所制备的p型导电薄膜具有四方金红石型多晶SnO2结构。霍尔效应结果显示:500°C,1 h为最佳退火条件,该条件下SnO2/Al/SnO2复合薄膜的孔隙浓度为1.14×1018 cm-3、电阻率为1.38?·cm。退火时间为1~8 h时,p型SnO2/Al/SnO2复合薄膜的光透射率可达80%以上,退火1 h时薄膜的光透射率达到最大值。     

退火时间对射频溅射p型透明SnO2/Al/SnO2导电薄膜结构、形貌、光学和电学性能的影响（英文）

采用SnO2和Al靶,通过射频(RF)溅射在石英基体上制备透明p型SnO2/Al/SnO2导电复合薄膜。沉积薄膜在500°C进行不同时间(1~8 h)退火处理,研究退火时间对SnO2/Al/SnO2复合薄膜结构、形貌、光学和电学性能的影响。X射线衍射结果表明:所制备的p型导电薄膜具有四方金红石型多晶SnO2结构。霍尔效应结果显示:500°C,1 h为最佳退火条件,该条件下SnO2/Al/SnO2复合薄膜的孔隙浓度为1.14×1018 cm-3、电阻率为1.38?·cm。退火时间为1~8 h时,p型SnO2/Al/SnO2复合薄膜的光透射率可达80%以上,退火1 h时薄膜的光透射率达到最大值。     

Zn靶与掺铝ZnO靶共溅射制备ZnO:Al薄膜及其性能

采用Zn靶和ZnO(掺2%Al2O3(质量分数))陶瓷靶在玻璃衬底上共溅射沉积Al掺杂ZnO薄膜,即ZnO:Al透明导电薄膜,研究Zn靶溅射功率(0～90 W)和衬底温度(室温、100℃和200℃)对薄膜结构、形貌、光学和电学性能的影响。结果表明:按双靶共溅射工艺制备的ZnO:Al薄膜的晶体结构均为六角纤锌矿结构,且随着Zn靶溅射功率的增加,薄膜的结晶质量呈现出先改善后变差的规律,薄膜中的载流子浓度逐渐升高,电阻率逐渐降低,而薄膜的光学性能受其影响不大;随着衬底温度的升高,薄膜的结晶性能得到改善,薄膜的可见光透过率增强,电阻率降低。     

衬底温度对FeCrCoNiMn高熵合金氮化物薄膜组织结构和电性能的影响

采用射频反应磁控溅射法在Si(100)衬底上制备出纳米晶高熵合金FeCrCoNiMn氮化物薄膜,结合场发射扫描电子显微镜(FESEM)、电子显微探针(EPMA)、X射线光电子能谱分析仪(XPS)、原子力显微镜(AFM)及四点探针(FPP)研究了衬底温度(40、300、500℃)对沉积薄膜的表面形貌、化学组成、微观结构和导电性能的影响。结果表明,衬底温度对高熵合金FeCrCoNiMn-N薄膜的形貌、组织结构和导电性能有显著影响。随衬底温度的升高,薄膜的表面粗糙度和颗粒/晶粒尺寸增大;与氮反应沉积后,含氮高熵合金薄膜中形成了Mn3N2、MnN、Cr2N和CrN金属氮化物,而Fe、Ni和Co元素则以Fe-Ni-Co合金相形式存在。不含氮合金薄膜其电阻率高达131.78mΩ·cm,加入氮沉积后,随衬底温度的增加,含氮薄膜的电阻率逐渐减小(6.14~0.43mΩ·cm),含氮合金薄膜的电阻率明显小于合金靶材的沉积膜,衬底温度500℃时薄膜的电阻率达到最小值0.43mΩ·cm。     

VO_2/FTO复合薄膜的制备及其光电特性研究

采用直流磁控溅射法在掺氟的SnO_2(FTO)导电玻璃衬底上沉积纯钒金属薄膜,再在常压氮氧混合气氛中退火制备VO_2/FTO复合热致变色薄膜,并对复合薄膜的结构、光学特性以及电学特性进行了测试分析。结果表明,薄膜结晶程度较高,表面平滑致密,具有很好的一致性,导电玻璃上的FTO并没有改变VO_2择优取向生长,但明显改变了VO_2薄膜的表面形貌特征。与VO_2薄膜的典型相变温度68℃相比,VO_2/FTO复合薄膜的相变温度降低约20℃,热滞回线收窄到5℃,相变前后的红外透过率分别为45%和22%,相变前后电阻率的变化达3个数量级,VO_2/FTO复合薄膜优良的光电特性对新型光电薄膜器件的设计开发和应用具有重要意义。     

溶胶-凝胶法制备的ZnO:Al薄膜的微观结构及光学、电学性能

采用溶胶-凝胶法制备了ZnO:Al(AZO)透明导电薄膜．通过X射线衍射(XRD)、紫外-可见分光光度计 (UV-Vis)、扫描电镜(SEM)和电阻测量装置,考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响．结果表明,退火温度越高,多晶AZO薄膜的(001)晶面择优取向生长的趋势越强,并且随退火温度升高,薄膜的晶粒尺寸增大,透光率增加．薄膜晶体结构为纯ZnO的六角纤锌矿结构．在掺杂浓度1％(摩尔分数)、退火温度500℃及镀膜层数10的条件下,得到了电阻率为3．2×10-3Ω·cm、可见光区的平均透射率超过90％的AZO薄膜．     

退火温度对磁控溅射Mo薄膜结构和性能的影响

采用磁控溅射技术在石英基体上制备了厚度为600 nm的Mo薄膜,并在不同温度下(400～ 900℃)对其进行退火处理.通过XRD、SEM、四探针测试仪对Mo薄膜的结构和性能进行了分析.结果表明,随着退火温度的升高,(110)晶面择优取向特性增强.Mo薄膜在退火温度为800℃时电阻率达到最小值3.56×10-5 Ω·cm,在900℃退火时薄膜出现宽度约为50 nm的微裂纹且薄膜电阻率较大.     

纯Ar气氛中退火对Al掺杂ZnO薄膜性能的影响

用射频磁控溅射技术制备了高度择优取向的Al掺杂ZnO(ZAO)薄膜,并对薄膜在纯氩气中进行了400～600℃的退火处理.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、光谱仪和四探针测试仪等对退火前后薄膜进行了表征和光学、电学性能研究.研究表明,纯氩气中退火处理对ZAO薄膜的晶体、光学和电学性能有影响.原位沉积的薄膜电阻率2.59Ωcm,可见光区透过率约70%.500℃纯Ar气氛中退火1h后,ZAO薄膜的平均晶粒有所长大,薄膜内应力达到最小,接近于松弛状态;薄膜可见光区平均透过率从70%提高到80%左右;而薄膜的电阻率变化不明显,从2.59Ωcm降低到1.13Ωcm.     

Cr掺杂对Cu/Si(100)薄膜体系的微观结构及电阻率的影响

利用简易合金靶在Si(100)衬底磁控溅射制备Cu、Cu-1.19%Cr和Cu-2.18%Cr薄膜,研究Cr对Cu薄膜在300～500 ℃真空退火前后的结构和电阻率的影响.X射线衍射分析表明Cu及Cu(Cr)薄膜均呈现Cu(111) 和Cu(200)衍射峰,并且Cu(Cr)薄膜一直保持较强的(111)织构.原子力显微分析表明Cu薄膜在500 ℃退火时,薄膜与硅基底发生明显的互扩散,薄膜表面的致密度及平整度下降;而Cu(Cr)薄膜在退火时保持较高的致密度,Cr显著提高Cu/Si薄膜体系的热稳定性.Cu(Cr)薄膜的电阻率随温度升高先减小而后增加,在400 ℃及500 ℃退火30 min后分别达到最小值2.76 Μω.cm和2.97 μΩ.cm,与纯Cu膜相近(2.55 μΩ.cm).Cu(Cr)薄膜退火电阻率的大幅度减小与薄膜晶粒尺寸的增加以及Cr的扩散有关.适量的Cr掺杂和合理的退火工艺使得Cu(Cr)合金薄膜在高温互连材料方面具有很大的应用前景.     

Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films

Indium tin oxide(ITO) thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering.The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 °C for 1 h.The influences of the annealing temperature on the microstructure and electrical properties of the ITO thin films were investigated,and the results indicate that the as-deposited ITO thin films are amorphous in nature.All samples were crystallized by annealing at 500 °C.As the annealing temperature increases,the predominant orientation shifts from(222)to(400).The carrier concentration decreases initially and then increases when the annealing temperature rises beyond1,000 °C.The resistivity of the ITO thin films increases smoothly as the annealing temperature increases to just below900 °C.Beyond 900 °C,however,the resistivity of the films increases sharply.The annealing temperature has a significant effect on the stability of the ITO/Pt thin film thermocouples(TFTCs).TFTCs annealed at 1,000 °C show improved hightemperature stability and Seebeck coefficients of up to 77.73 μV/°C.     

大气等离子喷涂Al2O3-3%TiO2涂层的性能

利用两种中频交流磁控溅射电源,溅射Al2O3含量为2%的两块氧化锌铝陶瓷靶材,在不同衬底温度的条件下制备得到了ZAO薄膜。研究了不同衬底温度条件下不同靶材和溅射电源对ZAO薄膜结构、电学和光学性能的影响。结果表明,制备得到的ZAO薄膜均具有c轴择优取向生长的晶体结构,在衬底温度为240℃时,得到的ZAO薄膜的电阻率低至1.4×10-3Ω·cm,可见光平均透过率在82%以上。     

Relationship between structure and electrical resistivity in nano-structured copper-containing carbon films

The microstructure evolution of carbon/copper (C/Cu) films and its relation to the variation of film electrical resistivity has been studied. The films doped with copper in the range of 1.4-22.6 at.% Cu, were deposited by dc magnetron sputtering of composite graphite-copper target. The microstructure of films was studied by Raman spectroscopy and electron diffraction. The electrical resistivity was measured parallel and perpendicular to the substrate surface. The introducing of copper atoms into carbon matrix which consists of disordered graphite-like nano-clusters results in additional distortion of film microstructure at low copper content and some ordering of it at high copper content. At low copper concentrations the additional distortion of graphite-like clusters prevails over the input to electrical conductivity from copper atoms thus increasing the electrical resistivity of C/Cu films. At high copper concentrations the input to electrical conductivity is predominant and the film resistivity decreases.     

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.     

富Ce混合稀土加入量对铝合金组织与导电性能的影响

通过金相显微镜(OM)、扫描电镜(SEM)、室温导电率及高温电阻率测试等方法研究富Ce混合稀土对铸态及均匀化态铝合金组织与导电性能的影响。结果表明:富Ce混合稀土对铝合金组织具有细化、变质和净化的作用,加入量为0.10%时细化效果最好;随着富Ce混合稀土加入量的增加,细化效果逐渐减弱,但对含铁杂质相的变质作用加强,导电率逐渐升高,加入量为0.30%时,导电率达到62.10%IACS;合金在570℃均匀化24 h后导电率整体上升,富Ce混合稀土加入量为0.30%时,导电率达到62.30%IACS;富Ce混合稀土对铝合金的高温导电性能有不利影响,加入量越多,合金在高温下的电阻率越大,通过均匀化处理可以减小合金的高温电阻率,降低合金电阻率对温度的敏感性。     

质子-电子混合导体SrCe_(0.95)Tm_(0.05)O_(3-δ)的电性能研究

采用高温固相法制备了质子-电子混合导体SrCe_0.95Tm_0.05O_(3-δ)材料.使用X射线衍射仪、扫描电子显微镜分别对1600 ℃烧结10 h后的混合导体晶型、微观形貌进行了研究.应用交流阻抗谱法测试了空气、氢气、氩气3种不同气氛中混合导体的电导率.结果表明:所制备的混合导体为单相致密斜方晶钙钛结构,气氛对晶粒电导率影响不大,而对晶界和总电导率有明显影响.800 ℃空气、氢气和氩气气氛中总电导率分别为4.65×10~(-3),3.41×10~(-3),1.87×10~(-3) S·cm~(-1).     

Nano Sized Copper Selenide Thin Film Pre-Cursor by A Liquid Phase Chemical Growth Process

The deposition of copper selenide(CuSe)thin films was carried out using liquid phase chemical bath deposition process at the optimized growth parameters as:60℃deposition temperature,90 minutes deposition time,pH equal to 10.5±0.1 and 72±2 r/min speed of mechanical rotation.The as-grown deposits exhibited excellent uniformity and physical adherency with the substrate surface and are smooth and diffusely reflecting with colour changing from yellowish orange to dark chocolate during deposition.The layer is of the order of 300 nm thick.The EDS analysis technique gave film composition to be nearly stoichiometric(Cu=47.89%,Se=52.11%).An X-ray diffraction analysis showed CuSe to be polycrystalline hexagonal with a good match of d-values and intensities of reflections.The crystallite size is in the nanorange(50-60 nm).The as-deposited CuSe exhibited a high coefficient of absorption(α=105cm-1)with a direct optical band gap of 1.81 eV.Compared to other chalcogenides,CuSe films exhibit low resistance;room temperature electrical resistivity being 1.55×103?cm.The electrical conductivity decreased with increase in temperature up to 473 K;showing totally unusual behaviour from that of the semiconducting property.The thermo probe measurements showed n-type conduction of the samples.     

退火温度对钴铁氧体薄膜结构和性能的影响

采用溶胶-凝胶法结合匀胶旋涂工艺在复合基片(Pt/Ti/SiO2/Si)上制备了钴铁氧体(CoFe2O4)薄膜,利用XRD、SEM、VSM分析了薄膜的微结构以及磁性能,研究了不同退火温度对钴铁氧体薄膜的结构和磁性能的影响.结果表明,钴铁氧体在500℃时开始形成尖晶石相.随着退火温度的增高,钴铁氧体晶粒逐渐长大,饱和磁化...     

INVESTIGATION OF SURFACE MORPHOLOGY, STRUCTURE AND ELECTROCATALYTIC PROPERTIES FOR O_2 EVOLUTION OF TITANIUM BASED IrO_2+Ta_2O_5 COATINGS

1.IntroductionTitaniumbasednoblemetalokidecoatingshavebeenwidelyinvestigatedsincethepast3oyears[l':].Inthisperiod,variousmirtures,compositiollswerepreparedanddifferentmulti-coatingprocessesweredevelopedaselectrodematerialsinelectrochemicalfieId.Inbinaxysystems,thecoatingsof7Omol%IrO2 3Omol%Ta2O5wereverifiedtopossessthemaximumactivityanddurabilityforoxygenevolutio.[3'4],Iroz Taosdepositshavebeenstudiedentensively;ThehighstabilityofthisbinarymixturecouldbeattributedtotheformationofIro2baseds…     

磁控溅射法制备硅钼薄膜及其性能表征

用射频磁控溅射法在硅基底上成功制备出具有低电阻率的单一四方相二硅化钼薄膜，并通过X射线衍射仪、原子力显微镜及四探针电阻测试仪对退火前后的薄膜样品进行了结构和电学性能分析。结果表明：薄膜的电学特性强烈依赖于薄膜的微结构和相组成。沉积态薄膜主要为非晶结构。经高温退火后，薄膜的晶态结构发生显著的变化，晶化效果明显提高，薄膜方阻大幅降低。