硅材料的太赫兹波频域特性分析

对不同电阻率的N型硅材料(电阻率从5~100Ω.cm)在太赫兹波波段的折射率、消光系数和吸收系数等特性参数,利用返波振荡器(BWO)太赫兹波系统进行了测试、计算和分析,得到N型硅在0.23 THz到0.375 THz频段范围内的光学特性.表明在这一波段N型硅的太赫兹波吸收系数随着电阻率的增加而减小,吸收系数最小值可达到3.39×10-4cm-1.分析表明,它将是潜在的太赫兹波波导的最佳候选材料.     

膜厚对导电氧化锌宽带抗反射涂层的太赫兹传输影响

利用直流磁控溅射方法,在石英基底上制备了可用于太赫兹电磁波频率范围内的宽带抗反射涂层的掺铝氧化锌导电薄膜。在太赫兹时域光谱频率0.1~1.0THz范围内研究不同厚度的氧化锌薄膜的介电响应,得到了与频率相关的电导率、吸收和薄膜折射率,着重研究了膜厚对太赫兹波传输特性的调制作用。实验结果很好地符合了经典的Drude模型,表明可以通过控制氧化锌薄膜的厚度来改变太赫兹波的传输特性,并且导电氧化锌薄膜能够作为太赫兹频段范围的宽带抗反射涂层应用于衬底和光学器件上。     

MBE技术蓝宝石衬底上生长VO_2薄膜及其太赫兹和金属–绝缘体相变特性研究（英文）

采用分子束外延(MBE)技术在单晶蓝宝石衬底上生长了高质量化学计量比二氧化钒(VO_2)薄膜,通过该技术实现薄膜厚度15~60 nm精确控制。对于优化条件下VO_2薄膜,实现了电阻率变化超过4个数量级的优异金属–绝缘体相变,近似于之前报道高质量单晶VO_2相变特性。特别是通过太赫兹时域光谱分析了不同厚度的VO_2薄膜在太赫兹波段的光学特性。结果表明:VO_2薄膜的厚度对其在太赫兹波段的光学特性有很大影响。因此,为了获得更优的可靠性和重复性能,VO_2薄膜的厚度必须得到精确控制。本研究结果对于下一步VO_2基太赫兹器件研究具有重要意义。     

MBE技术蓝宝石衬底上生长VO2薄膜及其太赫兹和金属-绝缘体相变特性研究

采用分子束外延(MBE)技术在单晶蓝宝石衬底上生长了高质量化学计量比二氧化钒(VO₂)薄膜, 通过该技术实现薄膜厚度15~60 nm精确控制。对于优化条件下VO₂薄膜, 实现了电阻率变化超过4个数量级的优异金属-绝缘体相变, 近似于之前报道高质量单晶VO₂相变特性。特别是通过太赫兹时域光谱分析了不同厚度的VO₂薄膜在太赫兹波段的光学特性。结果表明: VO₂薄膜的厚度对其在太赫兹波段的光学特性有很大影响。因此, 为了获得更优的可靠性和重复性能, VO₂薄膜的厚度必须得到精确控制。本研究结果对于下一步VO₂基太赫兹器件研究具有重要意义。     

等离子体中太赫兹波传输及成像探测特性研究

本文根据散射矩阵方法模拟等离子体并建立了非均匀等离子体理论模型,并在此基础上计算了0.1 THz^10 THz频段的全波段太赫兹波在其中的传输特性。根据介质阻挡放电原理在实验室环境下搭建等离子体射流产生装置并产生非均匀等离子体,进行了太赫兹时域光谱(THz-TDS)以及宽带太赫兹源在等离子体中的透射光谱测量以及太赫兹波对等离子体遮挡下目标物的反射成像的试验。理论和实验结果均表明,较高频太赫兹波在等离子体中有良好的穿透性,这为太赫兹波在黑障区的通信以及雷达探测应用打下研究基础。     

太赫兹时域谱技术快速定性检测奶粉中的三聚氰胺

采用太赫兹时域谱(THz-TDS)技术测量了奶粉中三聚氰胺在0.2~1.8 THz频段的吸收谱和折射率谱,同时运用密度泛函理论(DFT)计算了三聚氰胺在太赫兹波段的振动频率,并据此对实验光谱吸收峰进行了指认,计算结果与实验光谱特征峰很好吻合.表明太赫兹时域谱技术对快速测定识别奶粉中三聚氰胺成分具有良好前景.     

太赫兹时域谱的动物皮革光学特性

利用THz时域谱技术对猪皮、牛皮、羊皮在0.2~1.7 THz波段的吸收特性进行了研究.精确测量其折射率、吸收系数等光学参数用于对皮革成分分析以及质量评价,获得了三种皮革样品的吸收峰位置.该研究成果表明,THz-TDS技术可以用于对皮革成分快速检测.     

硅太赫兹波导配置及性能分析

针对现有太赫兹辐射源在输出频率可调性及输出功率方面的局限性。本文从非线性介质的Maxwell方程入手对非线性聚合物的光学性质进行理论分析,建立硅波导配置的数学模型。利用硅材料的高折射率,设计了硅太赫兹波导。分析了太赫兹波导模式图,讨论了硅太赫兹波导模式的有效折射率、波导损耗、连续波输出功率与输出频率的关系,实验结果表明:硅太赫兹波导产生的太赫兹波连续可调,输出太赫兹波频率范围宽至0.1THz到15THz,输出功率可达到微瓦级。     

太赫兹时域光谱测量薄膜液体的测量极限

由于太赫兹波和薄膜样品的相互作用长度太短,其引起的测量信号相对于参考信号的改变很可能被系统噪声所掩盖。为了解决太赫兹时域光谱测量液体薄膜样品的测量准确性和可靠性评价问题,该文利用不确定度分析理论,从幅值变化和相位变化推导太赫兹测量薄膜液体样品有可信结果的样品厚度临界值模型,从而确定保证测量结果可靠性的临界判据,也就是能够被太赫兹透射式系统探测到的最小薄膜厚度。分析中考虑了在样品-载体交界面的菲涅尔透射、样品中的FabryPérot反射以及在太赫兹波在薄膜样品中的透射影响。该判据可以用来确定一个太赫兹系统的性能是否足够可靠地测量特定厚度的薄膜液体样品。     

太赫兹时域光谱测量液体光学常数的不确定度分析

为建立太赫兹时域光谱测量液体样品光学常数的不确定度分析模型,针对以比色皿为样品池的太赫兹透射式测量系统,推导其测量方程。确认太赫兹幅值测量、样品厚度、比色皿厚度、比色皿倾角及近似传递函数等误差来源,以及这些误差在测量过程中的传递模型,得到表示它们各自不确定度与合成不确定度关系的解析公式。实验测量邻苯二甲酸二辛酯(DEHP)的折射率和吸收系数,并计算它们各自的测量不确定度的量级分别为0.01和1 cm-1,结果表明该不确定度评定模型可以成为评估光学常数测量结果准确性的基础。     

Optical constants in the ultraviolet region of evaporated high index thin films

A suitable method to determine the optical constants of high index thin films is essential for developing high efficiency dielectric thin film devices in theuv region from 240 nm to 400 nm. A quick and accurate method is established to determine these constants. Using this method the optical losses, refractive index, absorption coefficient and extinction coefficient of ZrO₂ films prepared by the method of reactive evaporation were evaluated in theuv region.     

High-index low-loss gallium phosphide thin films fabricated by radio frequency magnetron sputtering

High-index low-loss Gallium Phosphide thin films for visible light have been produced by radio frequency magnetron sputtering in an argon environment. This broadens the high refractive index limit of transparent optical materials using a physical deposition process. Energy-dispersive x-ray analysis and spectroscopic ellipsometry were used to characterize the stoichiometry and optical properties. A post-deposition high-temperature anneal was found to be necessary to restore the proper stoichiometric ratio and to reduce the absorption. The annealing conditions were optimized by an in-situ fiber-optic transmission spectrum monitoring system. The films exhibit a high refractive index (N = 3.23) and a low extinction coefficient (K = 0.029) at 633 nm. Such high index GaP films have broad applications in nanophotonic device designs.     

Effects of annealing temperatures on optical and electrical properties of vacuum evaporated Ga15Se77In8 chalcogenide thin films

The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary parts of dielectric constants) of amorphous and thermally annealed thin films of Ga₁₅Se₇₇In₈ chalcogenide glasses with thickness 4000 Å have been investigated from absorption and reflection spectra as a function of photon energy in the wave length region 400-800 nm. Thin films of Ga₁₅Se₇₇In₈ chalcogenide glasses were thermally annealed for 2 h at three different annealing temperatures 333 K, 348 K and 363 K, which are in between the glass transition and crystallization temperature of Ga₁₅Se₇₇In₈ glasses. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It was found that the optical band gap decreases with increasing annealing temperature. It has been observed that the value of absorption coefficient and extinction coefficient increases while the values of refractive index decrease with increasing annealing temperature. The decrease in optical band gap is explained on the basis of the change in nature of films, from amorphous to crystalline state. The dc conductivity of amorphous and thermally annealed thin films of Ga₁₅Se₇₇In₈ chalcogenide glasses is also reported for the temperature range 298-393 K. It has been observed that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges. The dc conductivity was observed to increase with the corresponding decrease in activation energy on increasing annealing temperature in the present system. These results were analyzed in terms of the Davis-Mott model.     

Ultra-thin crystalline films of CdSe and CuSe formed at the organic-aqueous interface

Two-dimensional nanostructures in the form of ultra-thin crystalline films of CdSe and CuSe have been prepared at the organic-aqueous interface by reacting toluene solutions of metal cupferronates with an aqueous solution of N,N-dimethyl selenourea. The films have been examined using electron microscopy and optical spectroscopy. At lower concentrations of the reacting species, the CdSe films formed at the toluene-water interface at approximately 30 degrees C consisted mostly of nanocrystals. With increase in concentration as well as temperature, the interface reaction yielded thicker films which are mostly single-crystalline. We have studied the time-dependent growth of the CdSe film at the interface using UV-visible absorption spectroscopy. Ultra-thin films of CuSe formed at the toluene-water interface are generally single-crystalline.     

Thickness dependent structural, electronic, and optical properties of Ge nanostructures

In the present paper, we have investigated structural, optical as well as electronic properties of electron beam evaporated Ge thin films having layer thicknesses ranging from ultra-thin (5 nm) to thick (200 nm). The Raman spectra show that all peaks are shifted towards lower wave number as compared to their bulk counterparts and are considered as a signature of nanostructure formation and quantum confinement effect. The Raman line exhibits transformation from nanocrystalline to microcrystalline phase with a reduction in blue shift of peak position with increase in Ge film thickness (>5 nm). Similarly, the optical absorption spectra corresponding to these films also show reduction in blue shift effect, although Ge 5 nm film shows the absorption behaviour quite different from higher thickness films. The corresponding band gap values obtained from absorption measurements are much larger than bulk Ge and are mainly attributed to the effect of quantum confinement as expected for small size particles calculated from GIXRD patterns. AFM data in each case are correlated and discussed with structural as well as optical results to support the effect of growth morphology on the above-mentioned observations. The results are further supported by photoelectron spectroscopy (PES), photoluminescence (PL) and resistivity measurements and are interpreted in terms of crystallinity and quantum confinement effect.     

Optical band gap and refractive index of c-BN thin films synthesized by radio frequency bias sputtering

Boron nitrogen (BN) films with the different cubic phase content were deposited on Si and fused silica substrates by radio frequency bias sputtering from a hexagonal BN target by using a two-stage deposition process. The BN films were characterized by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and UV-visible transmittance and reflection measurements. The optical absorption coefficient and the refractive index n were calculated from the transmittance and reflection spectra. With increasing the c-BN content the absorption edge shifts to the higher energy, indicating that the optical band gap of the BN films increases with cubic BN content. The optical absorption behavior of BN films shows characteristics of amorphous materials. The dependence of on the photon energy was fitted by the Urbach tail model and the band-to-band transition model at the two different energy regions, and the optical band gap of the BN films were obtained from the fits. In addition, the refractive index indicates obvious difference for the BN films with different cubic phase content.     

Optical-induced absorption tunability of Barium Strontium Titanate film

The absorption tunability of 100 nm thickness of ferroelectric Barium Strontium Titanate (Ba_0.5Sr_0.5TiO₃) thin films with different densities of pumped optical field is measured by terahertz time-domain spectroscopy in the range of 0.2 THz – 1.2 THz at 19 °C. Experimental results show that the absorption coefficient of BST film is approximately at 5000 cm⁻¹–20000 cm⁻¹ in the range of 0.2 THz – 1.2 THz and the absorption coefficient reached up to 16% when we applied the optical field up to 600 mW. The theoretical calculations reveal that increasing photoexcitation fluences is responsible for the increasing of transmission change in the conduction current density cause the absorption coefficient varied.     

Infrared Refractive Index and Extinction Coefficient of Polyimide Films

We have measured the transmittance of several polyimide (C₂₂H₁₀N₂O₄) films at wave numbers from 6000 to 500 cm^–1 (wavelengths from 1.67 to 20 m) using a Fourier-transform infrared (FT-IR) spectrometer. The free-standing polyimide films are made by spin coating and thermal curing processes. The thickness of the films ranges from 0.1 to 4 m. In the nonabsorbing region from 6000 to 4000 cm^–1, the minimum transmittance caused by interference is used to obtain the refractive index for film thicknesses greater than 1 m. The film thicknesses are determined by fitting the spectral transmittance using the refractive index. Molecular absorption strongly reduces the transmittance at wave numbers from 2000 to 500 cm^–1. The optical constants, i.e., the refractive index and the extinction coefficient, are determined from the measured transmittance for several films of different thickness using a least-squares method. A Lorentzian oscillator model is also developed, which in general agrees well with the measured transmittance at wave numbers from 6000 to 500 cm^–1. This study will facilitate the application of polyimide films in the fabrication of infrared filters and other optoelectronic applications. The methods presented in this paper can be used to determine the optical constants of other types of thin-film materials.