碳纳米管／PMMA／PVAc复合膜在低浓度有机气氛下气敏性能研究

将PMMA、PVAc和碳纳米管在四氢呋喃中混合，通过超声分散及溶液浇铸工艺制备了碳纳米管／PMMA／PVAc复合膜。研究了在低浓度四氢呋喃气氛下，碳纳米管／PMMA／PVAc复合膜电阻与气氛浓度的变化关系。研究表明：在浓度为0．6～6．0ppt的四氢呋喃气氛下，复合膜电阻随着气氛浓度的增大而增大，复合膜具有较优的敏感性：当四氢呋喃的气氛浓度为6．0ppt时，复合膜敏感率为16％。     

单壁碳纳米管的提纯方法

采用温控电弧炉，在600℃下，使用Fe／Ni/Mg催化剂大量制备了单壁碳纳米管。用两步纯化方法对单壁纳米管进行提纯：首先，原始的单壁碳纳米管在500℃，空气中加热30min；接着用37％的盐酸浸泡加热后的样品72h，水洗过滤后烘干,通过SEM、TGA、HRTEM和激光拉曼表征，纯化后单壁碳纳米管的纯度可高达95％，其直径范围为：1.24-1.38nm。     

模板浸润法制备可生物降解聚合物纳米管和纳米线

以孔径为200nm的阳极氧化铝（AAO）为模板，用简单的物理方法制备了生物可降解聚合物聚己内酯（PCL）的纳米管、线及其阵列结构。SEM和TEM测试结果表明：熔融法在120℃和140℃都能制得整齐的纳米管阵列结构，管径均匀，约300nm。在溶液法中，5％浓度的溶液制得了杂乱的纳米管，而10％浓度的溶液制得的是纳米线阵列，直径在200nm左右。     

温度对CVD法制备多壁碳纳米管的影响

以Fe／SiO2粉状物作催化剂用化学沉积法裂解乙炔制备出无序多壁碳纳米管,用TEM、XRD和DSC-TGA分析了反应温度对碳纳米管的影响。实验结果表明,反应温度分别为600、700和800℃时,制备出碳纳米管的直径相应为12～20、15～25和33～66nm,即碳纳米管的直径随着反应温度的升高而增大。同时随着反应温度的提高碳纳米管的石墨化程度也有明显的提高。因此碳纳米管的直径、石墨化程度等结构特性可以用反应温度来加以控制。     

用正交设计研究PVDF印VC／PMMA共混中空纤维膜

制备了PVDF（聚偏氟乙烯）／PVC（聚氯乙烯）／PMMA（聚甲基丙烯酸甲酯）三元共混中空纤维膜，讨论了影响膜性能的主要因素．正交实验结果表明：在PVDF／PVC／PMMA体系中，聚合物总浓度是影响膜的水通量的主要因素；PVDF浓度对膜强度影响最大；PMMA对膜的亲水性有较大的贡献．得到优化的制膜条件为：铸膜液中PVDF：PVC：PMMA=7：1．2：1．8（质量比），聚合物溶质的总质量分数为17％；添加剂吐温-80的质量分数为6％．     

含碳纳米管微波吸收材料的制备及其微波吸收性能研究

用竖式炉流动法,以二茂铁为催化剂,噻吩为助催化剂,苯为碳源通过催化裂解反应制备了碳纳米管,碳纳米管的外径为20-50nm,内径10-30nm,长度50-1000μm.分别以碳纳米管、羰基铁粉、碳纳米管与羰基铁粉的混合物为吸收剂制备了微波吸收材料,研究了上述三种微波吸收材料在2-18GHz的吸波性能,与纯碳纳米管和纯羰基铁粉微波吸收材料相比, 碳纳米管与羰基铁粉复合微波吸收材料在2-18GHz的吸收峰明显向低频移动.在含碳纳米管的微波吸收材料中,碳纳米管作为偶极子在交变电场的作用下,产生极化电流,电磁波的能量转换为其他形式的能量,瑞利散射效应和界面极化也是含碳纳米管微波吸收材料的主要吸波机理.     

高分散度非晶态NiB／CNTs催化剂制备及其催化加氢性能

利用苯胺、曲拉通分别对氨气热处理的碳纳米管进一步功能化，修饰碳纳米管表面，促进碳纳米管分散。采用超声波辅助的浸渍-化学还原法制备非晶态NiB／CNTs合金催化剂，平均粒径为14nm、10nm的非晶态NiB颗粒均匀分布在苯胺、曲拉通处理的碳纳米管表面。苯胺、曲拉通功能化处理使催化剂的Ni负载量分别提高了10．4％、14．6％，同时提高了催化剂的乙炔加氢活性和乙烯选择性。将苯胺和曲拉通的处理效果比较，发现无论是NiB颗粒的分散度还是催化剂的加氢性能，曲拉通处理的效果明显优于苯胺。     

甲烷化学气相沉积法合成小直径双壁碳纳米管

采用化学气相沉积法（CVD）以甲烷与氢气为原料,在900℃合成了大量的小直径双壁碳纳米管。我们用硝酸铁和氧化镁粉末的混合物作催化剂,三氧化二铝和钼酸铵作条件催化剂,研究表明条件催化剂的使用有利于双壁碳纳米管的选择性生长,可提高双壁碳纳米管的质量及其在产品中的比例,用扫描电子显微镜（SEM）、高分辨透射电镜（HRTEM）、热失重分析（TGA）和拉曼光谱（Raman）等分析纳米管的形貌和结构,结果发现其内径范围在0．62～0．88nm,外径范围在1．21～1．33nm之间。     

最新专利信息

纳米材料制备CN1273215A 用大功率连续二氧化碳激光制备单壁碳纳米管的方法 摘要:本发明是用大功率连续二氧化碳激光制备单壁碳纳米管的方法,其方法步骤:（1）按一定百分比在石墨粉中掺钴或镍粉或钴、镍混合物后经热压成复合墨块作为靶材;（2）把复合石墨块放进反应室后,抽真空再加进氩气;（3）用反向镜、聚焦镜将CO2激光聚焦于复合石墨块靶材上,用700瓦以上波长为10.6μm的CO2激光照射复合石墨块靶材,后取出用电子显微镜观察发现生长有产率达50％以上的单壁碳纳米管。本发明制备纳米管无需附加设备,使制备装置更为直接和简单成本低,并证明了用低能量波长连续红外激光也可制备单壁碳纳米管。     

Fe3O4包覆碳纳米管软磁性纳米复合微粒的制备及性能

用水解沉淀法在碳纳米管（CNTs）外包覆Fe3O4，制备了CNTs／Fe3O4纳米复合磁性微粒，借助透射电镜、振动探针式磁强计和外加磁场黏度计对其微观形貌、静态磁性能、沉降稳定性和磁流变性能进行了研究。结果表明：Fe3O4在碳纳米管（直径约20nm）表面形成了紧密的包覆层，微粒呈一维纳米管状结构，平均管径约60nm，平均表观密度为1．8g／cm^3，为传统磁流变液中所用铁粉等软磁性颗粒密度的四分之一。复合微粒的磁滞回线与Fe3O4纳米颗粒较为相似，具有较好的软磁性，其饱和磁感应强度（Bs）为0．21T，矫顽力（以）为7．67kA／m，用该软磁性复合微粒配制的磁流变液具有良好的沉降稳定性和磁流变特性。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.