传统固网运营商3G基站末端接入传输网络建设探讨

传统固网运营商在3G网络建设中,需对配套传输网络进行建设,其中对传输影响最大的是无线接入层,为满足RNC与NodeB之间Iub接口对传输的需求。Iub接口电路需跨越传输网的接入层和中继层,在中继层大部分可通过利用现有传输资源解决,在传输接入层必须依靠新建来解决。本文对传统固网运营商的3G接入传输即3G基站末端接入传输网络建设的组网方案、投资估算方法、建设注意事项等进行探讨。     

数据业务端到端QoS参数映射与优化

在移动通信网内采用业务质量(QoS,Quality of Service)机制实现差异化的业务传输是近年的研究热点。端到端QoS包括非接入层用户和业务的识别、不同承载间QoS的一致性传递和接入层QoS的正确执行。这里以EDGE网络中数据业务传送机制为基础,全面研究了3GPP的QoS框架在UMTS网络的GERAN A/Gb模式和UTRAN Iu模式中的QoS映射,给出一个经过优化的端到端QoS参数映射表,并基于该表,在真实的EDGE网络中验证了QoS参数优化的可行性和参数映射的一致性。实验结果表明,根据不同业务的特点采用差异化的传输策略可以提升业务的感知。     

面向双千兆业务发展的传输网络演进思考

为了探究双千兆业务对传输网络的影响,本文从5G布网对传输的超高带宽、低时延、网络分片等的需求,对SPN技术发展和部署进行分析。从千兆宽带对传输的高带宽、分光比和传输距离等性能优化的需求,对10G GPON技术发展和部署进行分析。基于这些诉求,探讨了3层网络下移、网络分片、10G GPON的演进替换等关键问题,并通过建立模型对传输各层带宽进行测算,提出了SPN核心层、汇聚层、接入层的演进方向和组网特征,以及10G GPON的演进方式和比较。通过对基于SPN和10G GPON技术的“双千兆第一区”的建设和运营的研究,引发对后续传输网络的搭建和演进的思考。     

PTN OTN技术及其应用

运营商网络经历了PDH、SDH、MSTP和WDM的发展,随着3G/4G业务的全IP化和大客户业务的宽带化,以及移动互联业务的高速发展,运营商需要更大带宽、更高速率、更可靠业务保护和更多样化QoS的传输网络,现有传输网络已经无法完成新业务的承载需求。PTN和OTN技术的出现弥补了现有网络的缺陷,其联合组网有利于推动城域传输网向着扁平化网络演进。介绍了PTN和OTN的概念,探讨三家运营商的组网方案,提出PTN+OTN联合组网的应用案例。     

3G的传输需求和应对策略研究

3G代表了未来移动通信的发展走向,是移动业务发展的必然趋势,因此在目前建设传输网络时充分考虑3G系统的传输需求是十分必要的.本文针对目前业界在3G传输方面所存在的三大认识误区,分别从3G传输组网的特点、3G接入网络设备的功能和接口类型对传输组网的需求等方面的分析出发,并结合RNC和Node B接口的使用方法和新型城域传送技术的应用,剖析了3G的传输需求并研究了应对策略.     

基于综合接入系统的3G业务传输解决方案

3G业务的开展及网络部署已成为各运营商关注的焦点,3G网络的业务特征将对现有的传输网络提出更多的新需求,尤其对接入层网络影响较大.本文从3G网络业务需求特征出发,对接入层传输网络优化的几种方案进行比较分析,提出基于综合接入系统的3G业务传输解决方案.     

GPON在3G接入平台的应用

GPON技术是新一代宽带无源光综合接入标准,具有大带宽、高效率、支持各种丰富的业务等优点,被视为实现接入网综合化、宽带化的理想技术.本文介绍了GPON各种技术的特点,结合3G接入平台对传输的要求,从GPON对3G各种类型接口的支持,实现多业务QoS的能力,时钟的保证等方面来分析GPON在3G接入平台的应用场景,进而提出适合GPON发展的应用模式和建议.     

3G传输网络技术及建网策略

一、概述 传输网络作为3G网络的基础,是目前运营商网络建设的重点.3G业务网络的底层协议、传输接口以及组网方式与2G不同,对基础传输网络的要求也不一样.本文主要从WCDMA传输接口、传送网技术选择和网络演进三个方面探讨3G传输网络的发展.     

基于ATM理念的UTRAN传输架构简析

现阶段,IP传输还无法满足高等级业务的QoS需求,而ATM技术面向连接的良好特性使其在3G传输网建设中得到广泛应用。本文基于ATM结构与IMA技术理念的分析,衍生出针对其在UTRAN内传输网组建中各式应用方案的探讨,以提供对UTRAN传输架构更为清晰的认识。     

3G传输网技术及演进策略

传输网作为运营商规模最大、结构最为复杂的基础网络,演进的平滑性、兼容性是最为关键的问题。通过对3G传输网分类及结合3G各业务阶段的发展特点,分别探讨了接入和核心传输网传输技术、方案的演进过程。总之,在网络建设的不同时期,演进应根据网络情况和需求采用不同的3G传输方案,对于PTN的引进则从传输网的核心层逐步向接入层推进。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.