硅基TPMS集成传感器研究

本文介绍了一种应用于轮胎压力监测系统(TPMS)的传感器芯片的设计与制作.该传感器芯片集成了压阻式压力传感器和单电阻结构的温度传感器,根据量程需要,硅杯膜的厚度与面积比比较大,所以高应力区向膜外扩展,通过改变桥臂电阻的摆放位置和形状,提高了传感器的灵敏度,并且通过采取高浓度注入电阻拐角区域,得到了较好的零点输出.     

片上温漂补偿的压阻式压力芯片的设计与制造

为解决硅压阻式压力芯片灵敏度随着温度变化发生漂移的问题,设计了一种在片上集成温度补偿结构的压力芯片。在压力芯片上制备电阻温度系数(TCR)为负数的多晶硅电阻用于分压,调整不同温度下的惠斯通电桥端电压以达到灵敏度补偿的效果。本文的研究包含理论分析、参数计算,并进行了芯片制备和性能测试。性能测试结果表明,补偿后的耐高温封装传感器芯片在-50℃～270℃区间内,温漂为-0.034%FS/℃,简易封装传感器芯片在-40℃～125℃区间内的温漂为-0.008%FS/℃,该补偿芯片的温漂远小于无补偿的压力芯片。     

一种在芯片上带有补偿电路的通用硅压力传感器

本文提出了一种硅压阻式压力传感器校准和温度补偿的新思想,根据这种思想,把压阻惠斯顿电桥同可调的多晶硅电阻电路组合在同一芯片上,本文叙谜了这种传感器的设计、制作及其测最特性。     

一种集成式多参数硅微传感器

为了实现小体积多参数的测量,提出一种单片集成多功能传感器.该传感器包括压力、温度和湿度传感器.各部分分别基于半导体压阻效应、电阻迁移率变化、极板间电容变化为原理制作而成.该传感器采用n型(100)基底,利用体硅和面硅工艺加工而成.测量电阻通过离子注入B 形成扩散电阻.为减小各参数间的相互影响,压力传感器的测量电阻布置于[110]晶向,测温电阻沿[100]晶向布置.温度输出信号可以实现对传感器中压力输出时温度漂移的精确补偿.芯片大小为5mm× 5 mm.试验表明传感器具有良好的线性,小迟滞,较高的灵敏度.     

多路硅压阻式压力传感器温度补偿系统的设计与实现

基于MAX1457实现了一种多路硅压阻式压力传感器温度补偿系统.MAX1457是一种专用传感器信号调理芯片.此芯片集成化程度较高,可以补偿硅压阻式压力传感器的温度误差和非线性误差.经调理后的综合误差不超过0.1%.在分析该芯片补偿原理的基础上,设计并实现了一种多路补偿系统.     

基于SOI压阻式噪声传感器的声学动态特性分析与设计

针对绝缘体上硅(SOI)压阻式噪声传感器的动态测量问题,利用声学特性分析基础进行声学结构设计,以保证噪声传感器的频响特性.设计了一种SOI感声膜芯片及与声腔结构构成的声敏感结构,通过调整结构参数可达到调整声腔的频率特性的目的.测试结果表明:噪声传感器具有良好的动态检测特性.     

新型扩散硅低压传感器

介绍一种采用矩形双岛硅膜结构,量程为6kPa的扩散硅低压传感器。该传感器具有非线性内补偿和20倍量程以上的过压保护功能。着重介绍了该产品的设计、芯片制造与封装工艺、温度系数补偿办法和传感器技术性能的测试结果。     

一种冲击加速度传感器的研究

本文介绍一种周边固支圆形膜片硅压阻式冲击加速度计的工作原理和结构,以及硅膜片尺寸与传感器输出的计算关系,冲击加速度传感器的电阻设计,及其器件的制作工艺流程。通过冲击试验,证明了该加速度传感器在高加速度作用下的实用性。     

气压传感器中保护材料硅凝胶的优化设计

在实际生产中,芯片保护材料的选择和厚度的设计是气体压力传感器封装中的重要问题.本文讨论了芯片保护材料硅凝胶在热循环过程中对压力芯片性能的影响,把膜片上最大等效应力作为优化设计的目标函数,研究了硅凝胶的厚度和与膜片上最大Von Mise应力之间的关系.     

全集成式流量传感器

<正> 我们首次研制出恒定芯片温度(CCT)式集成流量传感器后进行了有关该传感器的性能改善和实用化方面的工作。本文介绍把外接电阻和取样电阻等外接元件均集成在一个芯片上的全集成式流量传感器。 CCT型流量传感器共三大部分(在同一芯片上),其中A表示运放。流体流过芯片     

采用倒封装技术的硅热风速传感器封装的研究

本文给出了一个采用倒封装技术实现的硅热风速传感器的封装结构.该传感器使用铜柱凸点技术,倒装于薄层陶瓷上.利用陶瓷的导热性能实现传感器芯片的加热元件和环境风速的热交换,同时陶瓷又起保护和支撑传感器芯片的作用.测试结果表明,封装后的传感器具有良好的性能.     

双E 型硅加速度传感器的研制􀀁

本文在简要介绍了,利用硅的各向异性腐蚀工艺研制的,双E非整体弹性膜式硅芯片结构的同时,又较详细的报告了,用此芯片封装成的硅加速度敏感元件及硅加速度传感器结构,最后介绍这种加速度传感器的优良性能。     

MEMS-based humidity sensor with integrated temperature compensation mechanism

This study applies conventional micro-electro-mechanical systems (MEMS) techniques to develop a novel low-cost humidity sensor comprising a silicon substrate, a freestanding cantilever and an integrated resistive thermal sensor. The cantilever has a composite structure comprising a thin layer of platinum (Pt) deposited on a silicon nitride layer and then covered with a polyimide sensing layer. The cantilever deflected in the upward direction as water molecules absorbed by the polyimide sensing layer. The humidity sensor chip caused a measurable change in the resistance of the platinum layer. By compensating the change in the measured resistance by the ambient temperature, the absolute value of the relative humidity can be directly derived. The experimental results show that the sensor has a time-response of 0.9 s when exposed to a sudden humidity change of 65%RH to 95%RH. The sensitivity of the sensors decreases as the temperature increases. Furthermore, the sensor with the longest Pt resistor has the greatest sensitivity. In additions, the temperature-calibrated resistance signal generated by the sensor varies linearly with the ambient humidity.     

双E形结构硅压力传感器的研制

介绍利用硅的各向异性腐蚀工艺腐蚀出的一种双E形结构非整体结构弹性膜硅芯片及用此芯片封装成的压力敏感元件。借助于这种硅芯片与不同厚度的封孔膜结合 ,制成了灵敏度和量程范围各不相同的性能优良的压力传感器     

A flow sensor for liquids based on a single temperature sensor operated in pulsed mode

An anemometric flow sensor for liquids based on a single temperature sensor is presented. The sensor is based on a probe composed by a silicon chip glued to a copper cylinder acting as thermal feed-through. A precise temperature sensor and a resistive heater are integrated on the chip surface. The sensor is operated in pulsed mode to eliminate the interference of the fluid temperature, switching either the heater power or the probe temperature. The results of water flow tests in the range (1–30) l/h are presented. The problem of reducing the duration of the measurement cycle has been addressed with theoretical and experimental arguments.     

A hybrid capacitive pressure and temperature sensor fabricated by adhesive bonding technique for harsh environment of kraft pulp digesters

We have developed a compensated capacitive pressure and temperature sensor for kraft pulp digesters (pH 13.5, temperatures 25–175°C reaching a local maximum of 180°C and pressures up to 2 MPa). The gauge capacitive pressure sensor was fabricated by bonding silicon and Pyrex chips using a high temperature, low viscosity UV (ultraviolent) adhesive as the gap-controlling layer and heat curing adhesive as the bonding agent. A simple chip bonding technique, involving insertion of the adhesive into the gap between two chips was developed. A platinum thin-film wire was patterned on top of a silicon chip to form a resistance temperature detector (RTD) with a nominal resistance of 1,500 Ω. A silicon dioxide layer and a thin layer of Parylene were deposited to passivate the pressure sensor diaphragm and the sensors were embedded into epoxy for protection against the caustic environment in kraft digesters. The sensors were tested up to 2 MPa and 170°C in an environment chamber. The maximum thermal error of ±1% (absolute value of ±20 kPa) full scale output (FSO) and an average sensitivity of 0.554 fF/kPa were measured. Parylene-coated silicon chips were tested for a full kraft pulping cycle with no signs of corrosion.     

基于MEMS实现SOI压力传感器工艺研究

应用压组效应原理制作硅氧化物绝缘体（SOI）压力传感器,具有耐高温、抗辐射、稳定性好等优点,本文说明了SOI在微电子机械系统（MEMS）技术上的实现优势,并对压力传感器SOI结构的实现工艺进行了探索性试验,完成了SOI压力传感器的设计和封装,在强调了压力传感器的测试方法的同时,对所设计的样品进行了测试。     

A silicon test chip for the thermomechanical analysis of MEMS packagings

This paper reports on a method for the investigation of mechanical stress on MEMS sensor and actuator structures due to packaging processes. A silicon test chip is developed and manufactured to validate the simulation results. Finite element analysis (FEA) is used to optimize the geometric parameters and to find a stress sensitive sensor geometry. A diaphragm structure is used as mechanical amplifier for bulk induced stresses during the packaging process. Piezo resistive solid state resistors are doped into the surface of the chip to measure the stress in the diaphragms and at the contact pads being most significant locations for analysis. A high precision ohmmeter was used to measure the resistance prior and past the packaging process. The captured data allows for computation of the resulting stress loads in magnitude. Therefore, a stress evaluation of different packaging technologies is conducted and the impact of the packaging process on reliability can be estimated immediately.