Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate

Very thin erbium silicide layers have been used as source and drain contacts to n‐type Si in low Schottky barrier MOSFETs on silicon‐on‐insulator substrates. Erbium silicide is formed by a solid‐state reaction between the metal and silicon during annealing. The influence of annealing temperature (450 °C, 525 °C and 600 °C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO₂/Si structure was analysed by means of cross‐sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er‐related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450–600 °C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 °C, the Pt top layer vanishes and a (Pt–Er)Si_x system is formed.     

Structural analyses of Nd-doped CeO2 thin films deposited by pulsed laser deposition

CeO₂ thin films doped with neodymium oxides for application to gas sensors have been elaborated by the pulsed laser deposition technique. The films were deposited on orientated Si (100) substrates with variable deposition times (t = 90, 180 and 360 s) and molar fractions of Nd₂O₃ (0, 6.5, 15, 21.5 and 27 at.%). The resulting Nd–CeO₂ thin films were characterized by means of X‐ray diffraction analysis, scanning electron microscopy and transmission electron microscopy equipped with EDS (Energy Dispersive Spectrometer) microanalysis. From X‐ray diffraction analyses, it is clearly established that the texture is modified by Nd additions. The preferred (111) orientations of the CeO₂ crystals change into the (200) orientation. The morphology of the CeO₂ grains changes from triangles, for pure CeO₂ thin films, to spherical grains for Nd‐doped films. In addition, cell parameter analyses from X‐ray diffraction data show that a partial chemical substitution of Ce by Nd should occur in the face‐centred cubic lattice of ceria: this should give rise to Ce_1‐xNd_xO_2?z phases with oxygen non‐stoichiometry.     

Successful application of spatial difference technique to electron energy-loss spectroscopy studies of Mo/SrTiO3 interfaces

The electron energy‐loss near‐edge structure (ELNES) of Mo/SrTiO₃ interfaces has been studied using high spatial resolution electron energy‐loss spectroscopy (EELS) in a dedicated scanning transmission electron microscope. Thin films of Mo with a thickness of 50 nm were grown on (001)‐orientated SrTiO₃ surfaces by molecular beam epitaxy at 600 °C. High‐resolution transmission electron microscopy revealed that the interfaces were atomically abrupt with the (110)_Mo plane parallel to the substrate surface. Ti‐L_2,3 (～460 eV), O‐K (～530 eV), Sr‐L_2,3 (～1950 eV) and Mo‐L_2,3 (～2500 eV) absorption edges were acquired by using the Gatan Enfina parallel EELS system with a CCD detector. The interface‐specific components of the ELNES were extracted by employing the spatial difference method. The interfacial Ti‐L_2,3 edge shifted to lower energy values and the splitting due to crystal field became less pronounced compared to bulk SrTiO₃, which indicated that the Ti atoms at the interface were in a reduced oxidation state and that the symmetry of the TiO₆ octahedra was disturbed. No interfacial Sr‐L_2,3 edge was observed, which may demonstrate that Sr atoms do not participate in the interfacial bonding. An evident interface‐specific O‐K edge was found, which differs from that of the bulk in both position (0.8 ± 0.2 eV positive shift) and shape. In addition, a positive shift (0.9 ± 0.3 eV) occurred for the interfacial Mo‐L_2,3, revealing an oxidized state of Mo at the interface. Our results indicated that at the interface SrTiO₃ was terminated with TiO₂. The validity of the spatial difference technique is discussed and examined by introducing subchannel drift intentionally.     

Combining Ar ion milling with FIB lift-out techniques to prepare high quality site-specific TEM samples

Focused ion beam (FIB) techniques can prepare site‐specific transmission electron microscopy (TEM) cross‐section samples very quickly but they suffer from beam damage by the high energy Ga⁺ ion beam. An amorphous layer about 20–30 nm thick on each side of the TEM lamella and the supporting carbon film makes FIB‐prepared samples inferior to the traditional Ar⁺ thinned samples for some investigations such as high resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). We have developed techniques to combine broad argon ion milling with focused ion beam lift‐out methods to prepare high‐quality site‐specific TEM cross‐section samples. Site‐specific TEM cross‐sections were prepared by FIB and lifted out using a Narishige micromanipulator onto a half copper‐grid coated with carbon film. Pt deposition by FIB was used to bond the lamellae to the Cu grid, then the coating carbon film was removed and the sample on the bare Cu grid was polished by the usual broad beam Ar⁺ milling. By doing so, the thickness of the surface amorphous layers is reduced substantially and the sample quality for TEM observation is as good as the traditional Ar⁺ milled samples.     

Characterization of nitride thin films by electron backscatter diffraction

Thin films incorporating GaN, InGaN and AlGaN are presently arousing considerable excitement because of their suitability for UV and visible light‐emitting diodes and laser diodes. However, because of the lattice mismatch between presently used substrates and epitaxial nitride thin films, the films are of variable quality. In this paper we describe our preliminary studies of nitride thin films using electron backscattered diffraction (EBSD). We show that the EBSD technique may be used to reveal the relative orientation of an epitaxial thin film with respect to its substrate (a 90° rotation between a GaN epitaxial thin film and its sapphire substrate is observed) and to determine its tilt (a GaN thin film was found to be tilted by 13 ± 1° towards [101 0]_GaN), where the tilt is due to the inclination of the sapphire substrate (cut off‐axis by 10° from (0001)_sapphire towards (101 0)_sapphire). We compare EBSD patterns obtained from As‐doped GaN films grown by plasma‐assisted molecular beam epitaxy (PA‐MBE) with low and high As₄ flux, respectively. Higher As₄ flux results in sharper, better defined patterns, this observation is consistent with the improved surface morphology observed in AFM studies. Finally, we show that more detail can be discerned in EBSD patterns from GaN thin films when samples are cooled.     

Electron energy-loss spectroscopy study of thin film hafnium aluminates for novel gate dielectrics

We have used conventional high‐resolution transmission electron microscopy and electron energy‐loss spectroscopy (EELS) in scanning transmission electron microscopy to investigate the microstructure and electronic structure of hafnia‐based thin films doped with small amounts (6.8 at.%) of Al grown on (001) Si. The as‐deposited film is amorphous with a very thin (～0.5 nm) interfacial SiO_x layer. The film partially crystallizes after annealing at 700 °C and the interfacial SiO₂‐like layer increases in thickness by oxygen diffusion through the Hf‐aluminate layer and oxidation of the silicon substrate. Oxygen K‐edge EELS fine‐structures are analysed for both films and interpreted in the context of the films’ microstructure. We also discuss valence electron energy‐loss spectra of these ultrathin films.     

A convenient method for electron tomography sample preparation using a focused ion beam

Here we report a new sample preparation method for three‐dimensional electron tomography. The method uses the standard film deposition and focused ion beam (FIB) methods to significantly reduce the problems arising from the projected sample thickness at high tilt angles. The method can be used to prepare tomography samples that can be imaged up to a ±75° tilt range which is sufficient for many practical applications. The method can minimize the problem of Ga⁺ contamination, as compared to the case of FIB preparation of rod‐shaped samples, and provides extended thin regions for standard 2D projection analyses. Microsc. Res. Tech. 75:1165–1169, 2012. © 2012 Wiley Periodicals, Inc.     

Microstructure and electrical properties of diborides modified by rapid thermal annealing

Diborides of Ti, Hf and Zr are thermally, mechanically and chemically stable with good thermal and electrical conductivity. We tested their properties in front‐end processes used in Si integrated circuits (IC). Films were deposited by e‐beam evaporation either on Si, for the formation of contacts to the source/drain (S/D) regions, or on Si oxides, for the formation of metal gates in p‐type metal‐oxide‐semiconductor (PMOS) transistors. We focused on their crystallization caused by rapid thermal processing (RTP) at temperatures up to 1100 °C. Transmission electron microscopy was used for identification of nanocrystallites of TiB₂, ZrB₂, and HfB₂. The grain growth was correlated with temperature and time of RTP. Of all borides, HfB₂ resulted in the most complete crystallization with little amorphous phase left. There was no crystallographic degradation of the interface with Si or dielectrics, except for extreme thermal budgets. Complementary techniques were used for monitoring chemical stability and electrical parameters of test structures to assess the role of recrystallization in device behaviour.     

Three-dimensional analysis of porous BaTiO3 ceramics using FIB nanotomography

Three‐dimensional (3D) data represent the basis for reliable quantification of complex microstructures. Therefore, the development of high‐resolution tomography techniques is of major importance for many materials science disciplines. In this paper, we present a novel serial sectioning procedure for 3D analysis using a dual‐beam FIB (focused ion beam). A very narrow and reproducible spacing between the individual imaging planes is achieved by using drift correction algorithms in the automated slicing procedure. The spacing between the planes is nearly of the same magnitude as the pixel resolution on scanning electron microscopy images. Consequently, the acquired stack of images can be transformed directly into a 3D data volume with a voxel resolution of 6 × 7 × 17 nm. To demonstrate the capabilities of FIB nanotomography, a BaTiO₃ ceramic with a high volume fraction of fine porosity was investigated using the method as a basis for computational microstructure analysis and the results compared with conventional physical measurements. Significant differences between the particle size distributions as measured by nanotomography and laser granulometry indicate that the latter analysis is skewed by particle agglomeration/aggregation in the raw powder and by uncertainties related to calculation assumptions. Significant differences are also observed between the results from mercury intrusion porosimetry (MIP) and 3D pore space analysis. There is strong evidence that the ink‐bottle effect leads to an overestimation of the frequency of small pores in MIP. FIB nanotomography thus reveals quantitative information of structural features smaller than 100 nm in size which cannot be acquired easily by other methods.     

应用聚焦离子束/电子束技术的碳纳米管探针制备工艺研究

提出利用电子束诱导铂沉积和聚焦离子束铣削技术,实现碳纳米管原子力显微镜探针针尖的制备和结构优化研究。结合高分辨率扫描电子显微镜观测和纳米操纵仪,利用电子束诱导铂沉积实现碳纳米管固定到普通原子力显微镜探针末端,可实现直径小于10nm的纳米管探针制备。提出基于聚焦离子束铣削和照射技术实现对纳米管针尖的长度、角度的精确调控优化,纳米管探针的角度调控精度优于1°。     

Microstructure and interfacial chemistry of pure and La‐doped BiFeO3 thin films

We report on the microstructure and interfacial chemistry of thin films of pure and La‐doped multiferroic bismuth ferrite (Bi_1‐xLa_xFeO₃ or BLFO), synthesized on Indium Tin Oxide‐coated glass substrates by solution‐deposition technique and studied using scanning transmission electron microscopy. Our results show that undoped and La‐doped thin films are polycrystalline with distorted rhombohedral structure without any presence of any line or planar defect in the films. In addition, the films with La doping did not show any structural change and maintain the equilibrium structure. Cross section compositional analysis using X‐ray energy dispersive spectrometry did not reveal either any interdiffusion of chemical species or formation of reaction product at the film‐substrate interface. However, a closer examination of the microstructure of the films shows tiny pores along with the presence of ～2–3 nm thin amorphous layers, which may have significant influence on the functional properties of such films. Microsc. Res. Tech. 76:1304–1309, 2013. © 2013 Wiley Periodicals, Inc.     

Interfacial reactions and silicate formation in highly dispersed Lu2O3– SiO2 system

Solid state interface reactions in highly dispersed Lu₂O₃– SiO₂ binary oxide system were studied at 600–1100 °C with X‐ray powder diffraction (XRD), high‐resolution transmission electron microscopy (HRTEM) and Fourier Transform Infrared spectroscopy (FTIR). The results show that at 600–900 °C an amorphous, nanometer thick Lu‐O‐Si layer covering SiO₂ particles exists in the system. At higher temperatures the breakage of the layer into amorphous islands occurs and crystalline silicates with various structures are formed. In particular, Lu₄[Si₃O₁₀][SiO₄] silicate, analogue of B‐type Dy – Tm disilicates, forms at 1000 °C.     

The effect of an Ni–Cr protective layer on cyclic oxidation of Ti3Al

The effect of an 80Ni?20Cr (at.%) metallic coating on the cyclic oxidation behaviour of a Ti₃Al‐based alloy with the composition Ti?25Al?11Nb (at.%) was investigated in this study. Cyclic oxidation tests were carried out in air at 600 °C and 900 °C for 120 h. For one cycle test, the specimens were held for 24 h at test temperature and then furnace‐cooled to room temperature. The oxidation rate was determined by plotting the mass gain per unit surface area of the specimen vs. exposure time. The morphology and composition of the oxidation products were characterized on the cross‐section of the specimens by scanning electron microscopy, energy‐dispersive X‐ray spectroscopy and atomic force microscopy. The oxidation scale forms during exposure at both 600 °C and 900 °C. TiO₂ is the main oxide component, whereas the Al₂O₃ layer appears only discontinuously. The remarkable improvement in oxidation resistance at 900 °C was attributed to the chemical composition and structure of the scale formed on the 80Ni?20Cr coating.     

TEM studies of the nitrided Ni-Ti surface layer

The structure of surface layer, obtained on the nearly equiatomic Ni‐Ti alloy after nitriding under glow discharge conditions at temperatures 700 or 800 °C, was investigated. The structural characterization of the intruded layer was performed on cross‐sectional thin foils by the use of the transmission and scanning electron microscopes. The obtained results show that the nitrided layers consist mainly of the nanocrystalline TiN phase and small amount of Ti₂N. Between the nitrided layers and β‐NiTi matrix an intermediate Ti₂Ni phase layer was observed.     

Revealing local variations in nanoparticle size distributions in supported catalysts: a generic TEM specimen preparation method

The specimen preparation method is crucial for how much information can be gained from transmission electron microscopy (TEM) studies of supported nanoparticle catalysts. The aim of this work is to develop a method that allows for observation of size and location of nanoparticles deposited on a porous oxide support material. A bimetallic Pt‐Pd/Al₂O₃ catalyst in powder form was embedded in acrylic resin and lift‐out specimens were extracted using combined focused ion beam/scanning electron microscopy (FIB/SEM). These specimens allow for a cross‐section view across individual oxide support particles, including the unaltered near surface region of these particles. A site‐dependent size distribution of Pt‐Pd nanoparticles was revealed along the radial direction of the support particles by scanning transmission electron microscopy (STEM) imaging. The developed specimen preparation method enables obtaining information about the spatial distribution of nanoparticles in complex support structures which commonly is a challenge in heterogeneous catalysis.     

Electron crystallography applied to the structure determination of Nb(Cu,Al,X)2 Laves phases

The presence of primary precipitates of the Laves phases considerably improves the mechanical properties and the resistance to thermal degradation of the high‐temperature shape memory Cu–Al–Nb alloys. The structure analysis of the Laves phases was carried out on particles contained in the ternary and quaternary alloys as well on synthesized compounds related to the composition of the Nb(Cu,Al,X)₂ phase, where X = Ni, Co, Cr, Ti and Zr. The precise structure determination of the Laves phases was carried out by the electron crystallography method using the crisp software.     

Preparation of TiO2 nanowire gas nanosensor by AFM anode oxidation

Applications of atomic force microscopy (AFM) to the fabrication of chemical nanosensors are presented in this paper. Using AFM cantilever as cathode, the surface of Ti thin film is oxidized to form a few tens of nanometers wide oxidized metal semiconductor wire, which works as a nanowire-based hydrogen sensor. The reaction mechanism is proposed. The AFM observations of fabrication of a TiO₂ nanowire are carried out. The sensitive characteristic of such TiO₂ nanowires to hydrogen is investigated.     

Fabrication of nanodot plasmonic waveguide structures using FIB milling and electron beam‐induced deposition

Fabrication of metallic Au nanopillars and linear arrays of Au‐containing nanodots for plasmonic waveguides is reported in this article by two different processes—focused ion beam (FIB) milling of deposited thin films and electron beam‐induced deposition (EBID) of metallic nanostructures from an organometallic precursor gas. Finite difference time domain (FDTD) modeling of electromagnetic fields around metallic nanostructures was used to predict the optimal size and spacing between nanostructures useful for plasmonic waveguides. Subsequently, a multi‐step FIB fabrication method was developed for production of metallic nanorods and nanopillars of the size and geometry suggested by the results of the FDTD simulations. Nanostructure fabrication was carried out on planar substrates including Au‐coated glass, quartz, and mica slides as well as cleaved 4‐mode optical fibers. In the second fabrication process, EBID was utilized for the development of similar nanostructures on planar Indium Tin Oxide and Titanium‐coated glass substrates. Each method allows formation of nanostructures such that the plasmon resonances associated with the nanostructures could be engineered and precisely controlled by controlling the nanostructure size and shape. Linear arrays of low aspect ratio nanodot structures ranging in diameter between 50–70 nm were fabricated using EBID. Preliminary dark field optical microscopy demonstrates differences in the plasmonic response of the fabricated structures. SCANNING 31: 139–146, 2009. © 2009 Wiley Periodicals, Inc.     

TEM and HREM study of Al3Zr precipitates in an Al-Mg-Si-Zr alloy

The structure of Al₃Zr precipitates in Al‐1.0Mg‐0.6Si‐0.5Zr (in wt.%) alloy was investigated using conventional transmission electron microscopy (TEM) and high‐resolution TEM (HREM). After annealing of the alloy in the temperature range 450–540 °C, spherical precipitates of metastable L1₂‐Al₃Zr phase appeared nearly homogeneously within the matrix, and elongated particles were found at grain boundaries. L1₂‐structured Al₃Zr were about 20–30 nm in diameter and coherent with the matrix. Inside some of them, planar faults parallel to {100} planes were revealed by use of HREM. Most probably, these faults are an indication of the transition stage of transformation to the stable D0₂₃‐type Al₃Zr phase. The elongated precipitates (about 100 nm) were identified as D0₂₂‐type Al₃Zr. Energy‐dispersive X‐ray analysis showed that they contain, apart from Al, mainly Zr with small amounts of Si. The substitution of Al by Si increased the stability of the D0₂₂‐Al₃Zr as compared with D0₂₃‐Al₃Zr.     

Structural study of nanometer-sized iron crystallites in single crystalline iron–mgo composite films

Single crystalline composite films of iron and MgO are prepared by a simultaneous vacuum deposition technique. The structures of the composite films, especially of the iron crystallites embedded, are studied by high-resolution electron microscopy and nanometer-area electron diffraction. The α-iron (b.c.c.) crystallites of 1 nm in size are epitaxially embedded in single crystalline MgO films, the orientation being (011 )[100]_Fe/(001)[100]_Mgo and (001)[11 0]_Fe//(001)[100]_Mgo. A heat treatment of the as-grown films at 500–1,000°C brings about a phase transformation of the crystallites from α-iron to γ-iron (f.c.c.), followed by a grain growth of α-iron and finally the growth of the spinel, MgFe₂O₄. The γ-iron crystallites transformed are circular plates and have strains at the periphery to accommodate the surrounding MgO-matrix. The magnetic property of the composite films is also reported.